Luminescence centers in cubic boron nitride

Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385–400 nm and 365–395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300–350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 2, pp. 241–246, March–April, 2007.     

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Thin SiO₂ layers were implanted with 140 keV Si ions to a dose of 10¹⁷ cm⁻². The samples were irradiated with 130 Mev Xe ions in the dose range of 3×10¹²–10¹⁴ cm⁻², either directly after implantation or after pre-annealing to form the embedded Si nanocrystals. In the as-implanted layers HREM revealed after Xe irradiations the 3–4 nm-size dark spots, whose number and size grew with increase in Xe dose. A photoluminescence band at 660–680 nm was observed in the layers with the intensity dependent on the Xe dose. It was found that passivation with hydrogen quenched that band and promoted emission at ∼780 nm, typical of Si nanocrystals. In spectra of pre-annealed layers strong ∼780 nm peak was observed initially. Under Xe bombardment its intensity fell, with subsequent appearance and growth of 660–680 nm band. The obtained results are interpreted as the emission at ∼660–680 nm belonging to the imperfect Si nanocrystals. It is concluded that electronic losses of Xe ions are mainly responsible for formation of new Si nanostructures in ion tracks, whereas elastic losses mainly introduce radiation defects, which quench the luminescence. Changes in the spectra with growth of Xe ion dose are accounted for by the difference in the diameters of Xe ion tracks and their displacement cascades.     

Luminescence of samarium-activated cubic boron nitride

Under high pressure conditions, we have obtained samples of samarium-activated cubic boron nitride in the form of micropowders, ceramic samples, and polycrystals having high-intensity discrete photoluminescence in the red region of the spectrum that is stable in the temperature range 6 K to 300 K and is assigned to internal f-f electronic transitions in the Sm³⁺ ions. The materials obtained on the basis of cBN are intended for use as phosphors and light emitters (sources of red light) having thermal and chemical stability. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 1, pp. 88–93, January–February, 2008.     

Structure and luminescence of gadolinium-doped cubic boron nitride powder

The structural characteristics and chemical, morphological, and optical properties of cBN and cBN:Gd micropowders are studied by x-ray diffraction, energy-dispersive electron probe microanalysis (x-ray spectral microanalysis), and photoluminescence techniques. Cubic boron nitride (cBN) micropowders were synthesized at high pressures and temperatures from hexagonal boron nitride (hBN) micropowder and Li₃N catalyst. cBN:Gd micropowders were synthesized from mixtures of hBN, Li₃N, and GdF₃ micropowders. A lattice parameter of a~3.615 ? is calculated for both types of powder (cBN and cBN:Gd). The photoluminescence spectra of the cBN:Gd powder are found to contain emission lines attributable to intracenter optical transitions of Gd³⁺ ions.     

Photoluminescence of YVO4:Tm phosphor prepared by a polymerizable complex method

This paper reports the photoluminescence (PL) properties of nanocrystalline YVO₄: Tm phosphor synthesized by the polymerizable complex method based on the Pechini-type reaction. The powder was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), absorption spectroscopy and PL. The results of XRD and TEM show that, high-quality nanopowders with controlled morphology and microstructure were prepared at a relatively low temperature about 700 °C. Upon ultra violet excitation the vanadate host transferred energy to thulium ions efficiently and strong blue emission (475 nm) assigned to ¹G₄→³H₆ transmission is observed. By analyzing excitation and emission spectra of thulium doped yttrium vanadate, we deduced the mechanism of the energy transfer between vanadate host and thulium ions.     

Room-temperature 2 μm luminescence from Tm doped silicon light emitting diodes and SOI substrates

Room temperature electroluminescence in the eye safe region of the spectrum over the range 1.7–2.1 μm is demonstrated from a thulium doped silicon diode. The same room temperature photoluminescence can be attained on a silicon-on-insulator substrate. The emission lines are from the first excited to ground state of the Tm³⁺ ion, ³F₄→³H₆. A detailed study has been made to establish the optimum implant and processing conditions for efficient room temperature luminescence. The importance of the correct placement of the thulium ions with respect to the depletion region edge and dislocation loops formed upon boron implantation has been established. Tm³⁺ has been demonstrated to lase in other systems and is the basis of widely applied, commercial, optically pumped 2 μm lasers. The demonstration of electroluminescence in silicon and luminescence on an SOI platform are necessary prerequisites for the potential development of Tm injection lasers and optical amplifiers.     

Up-conversion emission in triply-doped Ho/Yb/Tm KGd(WO4)2 single crystals

Detailed spectroscopic studies of the triply doped KGd(WO₄)₂:Ho³⁺/Yb³⁺/Tm³⁺ single crystals (which exhibit multicolor up-conversion fluorescence) are reported for the first time. The absorption spectra of crystals were measured at 10 and 300 K; the room temperature luminescence spectra were excited at 980 nm wavelength. The dependence of the intensity of luminescence on the excitation power for three different concentration of Ho³⁺, Yb³⁺ and Tm³⁺ ions was investigated. Efficient green and red up-converted luminescence of Ho³⁺ ions and weak blue up-conversion luminescence of Tm³⁺ ions were observed in spectra. The red emission of Ho³⁺ ions is more intensive than their green emission. Dependence of the up-conversion luminescence intensity on the excitation power and impurities concentration was also studied; the number of phonon needed for efficient up-conversion was determined for each case. All possible energy transfer processes between different pairs of the impurity ions' energy levels are also discussed.     

Upconversion luminescence from Er-N codoped of ZnO nanowires prepared by ion implantation method

Nitrogen and erbium co-doped of ZnO nanowires (NWs) are fabricated by ion implantation and subsequent annealing in air. The incorporation of Er³⁺ and N⁺ ions is verified by energy dispersive X-ray spectroscopy (EDS) and Raman spectra. The samples exhibit upconversion photoluminescence around ∼550 nm and ∼660 nm under an excitation at 980 nm. It is discovered that the N-doped can drastically increase the upconversion photoluminescence intensity by modifying the local structure around Er³⁺ in ZnO matrix. The enhancement of the PL intensity by the N-doped is caused by the formation of ErO_6−xN_x octahedron complexes. With the increase of the annealing temperature (T_a), the Er³⁺ ions diffuse towards the surface of the NWs, which benefits the red emission and evokes the variation of intensity ratio owing to the existence of some organic groups.     

Hydrothermal synthesis and the enhanced blue upconversion luminescence of NaYF4:Nd3+,Tm3+,Yb3+

Nd³⁺, Tm³⁺ and Yb³⁺ co-doped NaYF₄ upconversion (UC) material was synthesized by the hydrothermal method. The structure of the sample was characterized by the X-ray diffraction, and its UC luminescence properties were investigated in detail. Under the 980 nm semiconductor laser excitation, its UC spectra exhibited distinct emission peaks at 451 nm, 475 nm and 646 nm respectively. On the basis of the comparison of UC spectra between NaYF₄:Nd³⁺,Tm³⁺,Yb³⁺ and NaYF₄:Tm³⁺,Yb³⁺, it was indicated that the existence of Nd³⁺ ion enhanced the blue emission intensity. The law of luminescence intensity versus pump power proved that the blue emission at 475 nm, and the red emission at 646 nm were the two-photon processes, while the blue emission at 451 nm was a three-photon process.     

Broadband 2 μm emission and energy-transfer properties of thulium-doped oxyfluoride germanate glass fiber

High near-infrared transparency Tm³⁺-doped germanate bulk glass and fiber have been fabricated and 2 μm emission properties demonstrated. Energy-transfer processes in the germanate glass and fiber are discussed. The emission spectra are obtained from both bulk glass and fiber with the excitation of a 794 nm laser diode. The results indicate that the line width of the Tm³⁺:³F₄→³H₆ emission spectra measured in fibers is narrower than that of the bulk glass sample and shifts to longer wavelengths with increment of fiber length. The extended overlap integral method is used to calculate the microparameters of energy transfer and critical distance. A model is derived to better understand of the energy-transfer process of thulium ions in the germanate glasses responsible for emission at 2 μm. The study indicates that Tm³⁺-doped germanate fibers with a large core diameter has proved to be promising infrared optical and high-power level laser materials.     

MOVPE 生长GaN薄膜的 光致黄带发光与激发光源的相关性

用四种不同光源作为激发光源,研究了蓝宝石衬底金属有机物汽相外延方法生长的氮化镓薄膜的光致发光特性。结果发现用连续光作为激发光源时,光致发光谱中除出现365 nm的带边发射峰外,同时观察到中心波长位于约550 nm 的较宽黄带发光;而用脉冲光作为激发光源时其发光光谱主要是365 nm附近的带边发光峰,未观察到黄带发光。氮化镓薄膜的光致发光特性依赖于所用的激发光源性质。     

Photoluminescence and its time evolution of AlN thin films

We report the room temperature photoluminescence measurements of AlN thin films stimulated by above-band-gap pulsed light excitation. Two AlN thin films with different composition and structure were studied. One AlN film, prepared by pulsed laser deposition from sintered aluminum nitride ceramic target, contains oxide impurities. The other one, prepared by plasma assisted reactive pulsed laser deposition from pure aluminum metal target, is composed of pure AlN compound. Upon the irradiation of the samples by 193 nm excimer laser pulses, both the as-grown AlN thin films luminesce in the ultraviolet and the green regions, peaked at 440 and 400 nm, respectively. We also examined the time evolution of the luminescence and found that the entire broad luminescence band decays non-exponentially at approximately the same rate.     

1.53 μm photoluminescence from ErYb(DBM)<Subscript>3</Subscript>MA containing polymer

We investigated the optical properties of the ErYb(DBM)₃MA complexes and the ErYb(DBM)₃MA containing polymer. Absorption and photoluminescence spectra confirm that the presence of Yb³⁺ ions enhances luminescence efficiency of Er³⁺ ions. The full width at half maximum bandwidth (FWHM) is ∼80 nm wide around 1.53 μm wavelength. We also fabricated ErYb containing polymeric channel waveguides using reactive ion etching technique. As an input pump of 120 mW was used, a ∼1.53 μm spontaneous emission was obtained in a 4-mm-long waveguide. PACS 42.00.00; 42.70.Jk; 42.82.Et     

用巯基乙酸作稳定剂制备CdSe纳米晶的光学性质

以巯基乙酸为稳定剂制备了CdSe纳米晶，通过尺寸选择沉淀得到2nm到3nm之间不同尺寸的纳米晶，利用室温光吸收，光致发光（PL）和光致发光激发（PLE）谱来研究了CdSe纳米团簇的光学性质。紫外－可见吸收谱给了具有清晰激光特征的尖锐吸收边，这表明样品的尺寸分布很窄。光致发光研究表明，样品有两个发射带，一个具有较高能量位于吸收边，来自电子－空穴对从最低激发态能级弛豫后的辐射复合，另一个低能发射带归属于基质与纳米晶界面存在的俘获中心。PLE谱中有2个吸收带，分别是S－S和P－P跃迁。最后还给出了不同激发能量下的发光特性。     

Mechanism of photoluminescence excitation of Mn<Superscript>2+</Superscript> ions in ZnS crystals

The mechanisms of photoluminescence excitation of Mn²⁺ ions in ZnS crystals have been investigated on the basis of complex analysis of the temperature dependences of the photoluminescence and photoluminescence-excitation spectra of ZnS:Mn crystals. The activation energy of a manganese luminescence center was estimated at E_a = 0.17 ± 0.05 eV. It is shown that E_a represents an energy band with a width ΔE_a = 0.1 eV, within which a manganese luminescence center can experience radiationless recombination. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 788–793, November–December, 2005.     

IR luminescence of thulium-activated crystals of double sodium yttrium fluoride Na0.4Y0.6F2.2:Tm3+: Self-quenching of luminescence from the 3H4 level

Na_0.4Y_0.6F_2.2:Tm³⁺ crystals with thulium contents of 0.5–20% have been grown by the Stockbarger-Bridgman method. The concentration dependences of the steady-state spectra and luminescence kinetics from the ³ H ₄ and ³ F ₄ thulium levels upon selective laser excitation of a series of Na_0.4Y_0.6F_2.2:Tm³⁺ crystals (0.5–20% Tm) are investigated. It is shown that the luminescence from the ³ H ₄ level becomes significantly quenched with an increase in the concentration due to the nonradiative energy transfer. No concentration quenching of luminescence from the ³ F ₄ level is observed. Possible schemes of self-quenching are considered for the ³ H ₄ thulium level, the self-quenching microparameters and macrorates are estimated using model quantum-mechanical calculation, and the most likely self-quenching mechanisms and schemes are found from comparison of the calculated and experimental self-quenching rates. Good agreement is obtained between the experimental and calculated kinetic curves. It is shown that, under pumping near ∼0.8 μm, self-quenching of the ³ H ₄ thulium level leads to effective occupation of the ³ F ₄ level and increases the luminescence intensity in the range of 1.7–1.9 μm. It is concluded that Na_0.4Y_0.6F_2.2:Tm³⁺ crystals are promising active media for tunable lasers in the range of 1.7–1.9 μm, with small thermal loss under laser-diode pumping near 0.8 μm. Original Russian Text ? S.é. Ivanova, A.M. Tkachuk, A.A. Mirzaeva, F. Pellé, 2009, published in Optika i Spektroskopiya, 2009, Vol. 106, No. 6, pp. 922–930.     

Enhanced Upconversion Luminescence of Erbium–Nitrogen-Doped Zinc Oxide Nano-Wires by Implantation of Ytterbium Ions

Erbium–nitrogen codoped zinc oxide nanowires of ytterbium-doped are prepared by thermal evaporation and ion implantation methods. Ytterbium ions are doped into nanowires at a fluence of (0, 1, 3, 5, and 9) × 10¹⁵ cm^?2. Microstructural and optical properties of specimen are investigated by X-ray diffractometer, absorption spectra, Raman, and upconversion photoluminescence examinations. Upconversion photoluminescence emissions at 550 nm and 660 nm are obtained under 980-nm light excitation. Both intensities of green and red peaks are enhanced by the introduction of ytterbium ions. When ytterbium ion fluence is 5 × 10¹⁵ cm^?2, light emission intensity reaches maximum value. The energy transfer and cross-relaxation processes are responsible for the change of emission intensity.     

Photoluminescence investigations of cubic boron nitride doped with neodymium during high-pressure synthesis

Micropowders of cubic boron nitride doped with neodymium are prepared under high-pressure and high-temperature conditions. The phase composition of the micropowders is studied using X-ray diffractometry and X-ray fluorescence analysis. The photoluminescence, photoluminescence excitation spectra, and the life-time of the ⁴ F _3/2 excited state of Nd ions introduced into cubic boron nitride are investigated. In photoluminescence spectra of the micropowders, structured bands are recorded in the range of the ⁴ F _3/2 → ⁴ I _9/2 and ⁴ F _3/2 → ⁴ I _11/2 electronic transitions. A higher intensity of the first structured band indicates that the corresponding photoluminescence in cubic boron nitride doped with neodymium is excited by the “three-level scheme.” It is demonstrated that an increase in the concentration of the neodymium compound in the growth batch leads to the formation of two luminescence centers Nd1 and Nd2 formed by neodymium ions located in different low-symmetry crystal fields in the micropowders. This is confirmed by X-ray diffraction investigations and the study of the photoluminescence decay curves. The ⁴ F _3/2 short-lived state is assigned to the Nd ions forming the Nd1 centers, and the long-lived state is attributed to the Nd ions forming the Nd2 centers.     

Photoluminescence and optical absorption properties of polymer modified carbon nanotubes

Polymethyl methacrylate modified carbon nanotubes were prepared using γ radiation, and the modified carbon nanotubes exhibited strong luminescence (∼ ∼568 nm) at room temperature and an absorption peak at ∼ ∼247 nm can be observed in the polymer modified samples.     

Structural and photoluminescence properties of Si nanoclusters obtained by ion implantation into Si3N4 films

In the present paper we report structural and photoluminescence (PL) results from samples obtained by Si implantation into stoichiometric silicon nitride (Si₃N₄) films. The Si excess was introduced in the matrix by 170 keV Si implantation performed at different temperatures with a fluence of Φ=1×10¹⁷ Si/cm². The annealing temperature was varied between 350 and 900 °C in order to form the Si precipitates. PL measurements, with a 488 nm Ar laser as an excitation source, show two superimposed broad PL bands centered around 760 and 900 nm. The maximum PL yield is achieved for the samples annealed at 475 °C. Transmission electron microscopy (TEM) measurements show the formation of amorphous nanoclusters and their evolution with the annealing temperature.