Terahertz radiation-induced magnetoresistance oscillations of a high-density and high-mobility two-dimensional electron gas

The terahertz response of a high-density and high-mobility two-dimensional electron gas in 13-nm GaAs quantum wells at frequencies of 0.7 and 1.63 THz has been investigated. Terahertz radiation-induced magnetoresistance oscillations have been discovered. The oscillation maxima coincide with the harmonics of cyclotron resonance. It has been shown that a large number of harmonics (up to the ninth) appear under irradiation at a frequency of 0.7 THz. In this case, the effect is the analogue of microwave-induced oscillations. At a higher frequency, the oscillation amplitude decreases drastically with an increase in the harmonic number. This indicates a transition to the regime of ordinary cyclotron harmonics.     

Negative magnetoresistance of a high-mobility two-dimensional electron gas in a nonlinear regime

The effect of the measuring current I_dc on the magnetoresistance (MR) of a high-mobility two-dimensional electron gas (2DEG) in a GaAs quantum well with AlAs/GaAs superlattice barriers has been studied. It has been found that, as I_dc increases, the MR of the 2DEG in the studied structures becomes negative in the range of classically strong magnetic fields. It has been shown that the observed negative MR is due to the transport of the 2DEG in the nonlinear regime.     

Zener tunneling between landau orbits in a high-mobility two-dimensional electron gas

Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be accomplished through a Zener tunneling mechanism, and make a significant contribution to the magnetoresistance. A remarkable oscillation effect in weak field magnetoresistance has been observed in high-mobility 2DEGs in GaAs -Al Ga 0.3As (0.7) heterostructures, and can be well explained by the Zener mechanism.     

Prediction of high-mobility two-dimensional electron gas at KTaO_3-based heterointerfaces

First-principles calculations are performed to explore the possibility of generating the two-dimensional electron gas(2 DEG) at the interface between LaGaO_3/KTaO_3 and NdGaO_3/KTaO_3(001) heterostructures. Two different models —i.e., the superlattice model and the thin film model — are used to conduct a comprehensive investigation of the origin of charge carriers. For the symmetric superlattice model, the LaGaO_3(or NdGaO_3) film is nonpolar. The 2 DEG with carrier density on the order of 1014 cm~(-2) originates from the Ta dxy electrons contributed by both LaGaO_3(or NdGaO_3) and KTaO_3. For the thin film model, large polar distortions occur in the LaGaO_3 and NdGaO_3 layer, which entirely screens the built-in electric field and prevents electrons from transferring to the interface. Electrons of KTaO_3 are accumulated at the interface, contributing to the formation of the 2 DEG. All the heterostructures exhibit conducting properties regardless of the film thickness. Compared with the Ti dxy electrons in SrTiO_3-based heterostructures, the Ta dxy electrons have small effective mass and they are expected to move with higher mobility along the interface. These findings reveal the promising applications of 2 DEG in novel nanoelectronic devices.     

Solitons in a two-dimensional electron gas

The non-linear spectrum of a two-dimensional electron gas (2-DEG) formed at the interface of a heterostructure is investigated. This spectrum is found to contain a new type of localized excitation exhibiting soliton behavior. A matrix formulation of the model equations permits the extraction of the equation of evolution in space for these excitations. Results are presented for the boundary value problem excited by temporal Gaussian pulses.     

Spatial correlations of a two-dimensional electron gas

The pair distribution function of a two-dimensional degenerate electron gas is evaluated in the chain diagram approximation and its asymptotic behavior is investigated. It shows characteristic oscillations at large distances. A sum rule of the eigenvalues of the free particle propagator is obtained. It can be used for the evaluation of the exchange energy and other purposes.This work was supported by the National Science Foundation.     

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

In selectively dopedn-Al_xGa_1–xAs/GaAs heterostructures with high-mobility two-dimensional electron gas (2 DEG) at the heterointerface a second conductive channel exists, if the Al_xGa_1–xAs layer is not totally depleted from free carries. The occurrence of parallel conductance has a deleterious effect on the performance of high-electron mobility transistors (HEMTs) fabricated from this material. Although in principle computable, parallel conductance depends on a large number of design parameters to be chosen for the heterostructure, which are additionally affected by the presence of deep electron traps inn-Al_xGa_1–xAs of composition 0.25n-Al_xGa_1–xAs/GaAs heterostructures is shown.     

Magnetotransport in a modulated two-dimensional electron gas

We propose a semiclassical theory of dc magnetotransport in a two-dimensional electron gas modulated along one direction with weak electrostatic modulations. We show that oscillations of the magnetoresistivity ρ_∥ corresponding to the current driven along the modulation lines observed at moderately low magnetic fields can be explained as commensurability oscillations.     

高迁移率二维电子系统中微波辐射引起的磁阻振荡和零电阻

一年以前 ,人们惊奇地发现 :在相当弱的磁场中 ,并不太强的微波辐照就可以使二维半导体的磁阻产生强烈的振荡 ,振幅的最大值可超过无辐照磁阻值的十几倍 ,最小值可以一直降到零 .全世界众多的凝聚态物理学家争相聚焦到这个领域 ,进行了许多实验和理论研究 ,企图弄清这一意外发现的机理 .经过一年多的努力 ,人们已经掌握了这个现象更多的细节 ,对其物理机制也有了初步了解 .但深入的实验和理论探索可能还要继续相当一段时间 .文章将对这个物理现象及相关的理论模型 ,尤其是目前得到较多赞同的光子辅助磁输运模型 ,作一简单的介绍 .     

Minimum magnetocapacitance of a screened two-dimensional electron gas

A theory for the magnetocapacitance of a partially screened two-dimensional (2D) electron gas is proposed. The model investigated is sensitive to different types of screening in a 2D electron gas with an integer filling factor: the so-called conventional approach and the self-consistent approximation introduced in the present paper. The calculations point to the importance of the self-consistent treatment of the magnetocapacitance of a 2D electron gas under the conditions of an integer filling factor. The final self-consistent results are qualitatively consistent with the available experimental data. Fiz. Tverd. Tela (St. Petersburg) 39, 742–745 (April 1997)     

Terahertz electron transport in a two-dimensional topological insulator in a HgTe quantum well

The terahertz response of a two-dimensional topological insulator in a HgTe quantum well to radiation with wavelengths of 118 and 184 μm is investigated. It is found that the photoconductivity is rather high (up to a few percent of dark conductivity) and is manifested in both the local and nonlocal responses of the system. This fact proves that the observed photoconductivity is caused by changes in the transport via edge current-carrying states. The sign and nonresonant character of the photoconductivity indicate that it is caused by the heating of electrons in the system. The analysis of experimental results makes it possible to suggest that this heating originates from the Drude absorption of terahertz radiation by metallic “droplets” appearing owing to fluctuations in the impurity potential and the gap and located in direct proximity to edge states.     

High-frequency conductivity of a two-dimensional electron gas with impurity electron states

The high-frequency conductivity tensor for a two-dimensional electron gas with short-range-acting impurity atoms has been computed. Spatial dispersion of the conductivity was taken into account. The threshold and maxima of the dissipative part of the conductivity arising from ionization of the impurity atoms by the field of electromagnetic waves were found. Numerical calculations of the conductivity were carried out for semiconductor structures with a two-dimensional electron gas. Khar’kov State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 91–94, July, 1997.     

Commensurability oscillations in a stripe-shaped two-dimensional electron gas

We have studied the commensurability oscillations for a nonplanar, two-dimensional electron gas which is confined to a surface spatially modulated both in the transverse and longitudinal directions. We show, numerically, that coupling the drift in both directions causes the motion to be chaotic. The channeling tori, responsible for conduction along the stripes, are destroyed and the averaged squared drift velocities decrease.