有限长双壁碳纳米管的电子输运性质

基于Landauer公式，研究了有限长的非公度和公度双壁碳纳米管的电子输运性顾，结果表明 ，双壁管的几何结构对其电子输运性质有显著的影响：非公度的双壁碳管的电导随能量的不 同，既可以是弹道型的，也可以是非弹道型的；由armchair管组成的公度的双壁碳管的电导 随能量变化呈现快速的电导振荡，并且此快速振荡叠加在背景慢振荡上，而zigzag管组成的 公度双壁管的电导随能量变化只有快速振荡、没有规则的慢振荡背景. 关键词： 碳纳米管 电子输运性质     

多层异质结构中的声学声子输运

在连续弹性近似下，采用转移矩阵方法，研究了由不同含Al浓度的异质结(GaAs/Al_{xiGa1-xiAs)所构成的对称多层异质结构中的声学声子输运性质.结果表明：该结构中的声子透射谱具有与同组分厚度超晶格(GaAs/AlAs )不一样的特征，具体体现在透射曲线振荡幅度与频率等方面；声子透射谱特征与对称异质结构中AlxiGa1-xiAs层的含Al浓度xi(i表示对称轴两边的第i层)的分布有很大的关系，具体表现为：当xi随i的增加而递减时，透射谱线除主波谷外较平滑；而当xi随i的增加而递增时，透射谱振荡明显增大，且主波谷被分裂.声子透射系数还依赖于异质结组分层的厚度，尤其是AlxiGa1-xiAs的厚度.另外，异质结的层数对声子输运也产生一定的影响. 关键词： 输运 声子 异质结}     

电极处势垒对新结构器件电子输运的影响

在新结构薄膜电致发光器件中,电极处的势垒的高度决定电子的注入数量.在电极界面处插入不同的薄膜材料,可以改变势垒的高度,并对电子注入数量和器件的发光亮度产生影响.通过拟合计算得到ZnO/SiO,ITO/SiO的界面势垒高度分别为0.51和1.87eV. 关键词：     

单电子在含有双能级原子的空腔中的输运行为

本文构造了一个含有双能级原子的空腔系统,用来模拟一个含有双能级量子点的微腔系统, 并研究其对电子输运行为的影响.通过对该系统输运方程的求解,给出了系统输运系数的具体表达式,然后通过调整空腔及原子的本征特性以及两者的耦合性质,研究了电子在腔体中的输运行为对腔体本征属性的依赖关系. 这些结果可以为如何操控电子在微观结构器件中的输运特性提供一定的理论支持.     

新型双异质结高电子迁移率晶体管的电流崩塌效应研究

针对传统单结GaN基高电子迁移率晶体管器件性能受电流崩塌效应和自加热效应限制的困境,对新型A1GaN/GaN/InGaN/GaN双异质结高电子迁移率晶体管的直流性质展开了系统研究.采用基于热电子效应和自加热效应的流体动力模型,研究了器件在不同偏压下电流崩塌和负微分电导效应与GaN沟道层厚度的相关.研究发现具有高势垒双异质的沟道层能更好地将电子限制在沟道中,显著减小高电场下热电子从沟道层向GaN缓冲层的穿透能力.提高GaN沟道层厚度可以有效抑制电流崩塌和和负微分输出电导,进而提高器件在高场作用下的性能.所得结果为进一步优化双异质结高电子迁移率晶体管结构提供了新思路,可促进新型GaN高电子迁移率晶体管器件在高功率、高频和高温等无线通讯领域内的广泛应用.     

径向压缩碳纳米管的电子输运性质

研究径向压缩形变对碳纳米管电子输运性质的影响对搭建微纳碳基电子器件具有重要意义.本文利用分子动力学模拟方法研究了碳纳米管与金属界面接触构型,得出碳纳米管径向压缩形变的规律.模拟结果表明:碳纳米管在水平接触金属表面后,其稳定状态下的径向压缩形变大小会受接触长度、管径大小、金属种类和片层数量的影响.基于紧束缚密度泛函理论和...     

一种基于双栅材料的单极性类金属氧化物半导体碳纳米管场效应管设计方法

由于导电沟道-源/漏电极界面处可能发生的载流子带间隧穿,传统类金属氧化物半导体(MOS)碳纳米管场效应管呈现双极性传输特性,极大影响了器件性能的提高及其在电路中的应用.为获得具有理想单极性传输特性的类MOS碳纳米管场效应管,本文提出了一种基于双栅材料的器件设计方法.模拟结果表明,通过合理选取调节电极材料,在不影响器件亚阈值斜率的同时,该设计方法不仅能使开关电流比增大6—9个数量级,有效调节阈值范围,而且能有效消除传统类MOS碳纳米管场效应管的双极性传输特性.进一步研究表明,该设计所获得的器件性能提高与调节     

单壁碳纳米管电子输运特性的稳定性分析

基于变形单壁碳纳米管能量色散关系,计算了碳纳米管最低导带的电子速度及有效质量随形变系数变化的各种曲线,以此推测碳纳米管输运性质的稳定性问题.计算结果表明：对于特定类型的碳纳米管,只当其形变发生在某特定方向、且处于低形变（形变系数ε≤002 ）区时,电子平均速度v_mean及平均有效质量m^*_mean随形变改变才会很小（相对改变量≤2%）,这意味着此时的碳纳米管低偏压电子输运性能是基本稳定的.而其他形变情形,电子平均速度v_mean或电子平均有效质量m^*_mean或两者随形变变化明显,甚至有跃变,这意味着其低偏压电子输运性能是不稳定的,甚至极不稳定. 关键词： 变形单壁碳纳米管 电子速度 电子有效质量 输运性能稳定性     

双stub介观环结构中的电子输运特征

采用量子波导理论研究了双stub介观环结构中电子输运特性。结果表明电子透射系数随stub的长度和环的大小而周期地振动,对环的周长和stub的长度做适当的调整,能使电子输运达到100%。并且比较了单stub介观环结构和双stub介观环结构对电子输运的影响,发现双stub的介观环结构对电子输运调制要比单stub介观环结构好。理论研究不仅对基础物理而且对量子器件研究均有重要意义。     

欠叠异质栅纳米碳管场效应管的量子输运特性（英文）

采用量子力学模型,对欠叠栅对传统单质栅碳纳米管场效应管(简称C-CNTFET)和异质栅碳纳米管场效应管(简称HMG-CNTFET)电学特性的影响进行理论研究,该模型基于二维非平衡格林函数(NEGF)泊松方程自洽求解.仿真结果表明,C-CNTFET的截止频率可高达THz量级,另外,通过比较C-和HMG-CNTFET可以看出,CCNTFET增加欠叠栅后能够提高器件的开关速度,但不利于提高器件的开关电流比.在HMG-CNTFET中,欠叠栅的采用不仅能够同时改善亚阈值特性和开关电流比,还能降低输出电导.     

Improvement of real time diffraction efficiency of NGD holograms by introducing electron donors

Nongelatin dichromated holographic film(NGD) is a new holographic recordingmaterial.Holograms recorded on this material have better environmental stability, higherdiffraction efficiency and stronger real time effect, etc..An experimental study to ascertainthe influence of two electron donors, namely,N,N-dimethylformamide(DMF) and dimethyl-sulfoxide(DMSO),on the real time diffraction efficiency(RTDE) of NGD holograms is car-ried out.The pressence of electron donors not only improves the sensitivity,but also enhancesthe real time effect greatly.RTDE of above 60% at±1 orders of NGD plane transimissiongrating is achieved by introducing electron donors.     

Investigation of the performance and band-to-band tunneling effect of a new double-halo-doping carbon nanotube field-effect transistor

Carbon nanotube field-effect transistors (CNTFETs) can be fabricated with Ohmic- or Schottky-type contacts. We focus here on Ohmic CNTFETs. The CNTFETs suffer from band-to-band tunneling which in turn causes the ambipolar conduction. In this paper, to suppress the ambipolar behavior of CNTFETs and improve the performance of these devices, we have proposed application of symmetric double-halo (DH)-doping in CNTFETs. In this new structure, the source-side halo doping reduces the drain-induced barrier lowering (DIBL) and the drain-side halo reduces the band-to-band tunneling effect. Simulation results show in the DH-CNTFET, subthreshold swing below the 60 mV/decade conventional limit can be achieved. Also it decreases significantly the leakage current and drain conductance and increases on–off current ratio and voltage gain as compared to conventional CNTFET.     

基于梯度掺杂策略的碳纳米管场效应管性能优化

双极性传输特性是制约碳纳米管场效应管(carbon nanotube field effect transistors,CNFETs)性能提高的一个重要因素.为降低器件的双极性传输特性并获得较大的开关电流比,提出了一种漏端梯度掺杂策略,该策略不仅适合于类MOS碳纳米管场效应管(C-CNFETs),同时也适合于隧穿碳纳米管场效应管(T-CNFETs).基于非平衡格林函数的数值研究结果表明,该策略不仅能有效降低器件的双极传输特性,而且能将器件开关电流比提高数个数量级.进一步研究发现,该掺杂策略在这两类碳纳米管 关键词： 梯度掺杂 带间隧穿 双极性传输 碳纳米管场效应管     

单壁碳纳米管吸附氧分子的电子输运性质理论研究

用基于第一性原理的密度泛函理论和非平衡态格林函数方法对(4,4)单壁碳纳米管及其吸附氧气分子情况下的平衡态和非平衡态电导性质进行了研究. 发现在小于2 V的偏压下,系统对电压的增加呈现两种不同增长速率的电流响应,其中电压小于1.1 V时电流增加速率较大;而当电压大于该值后,电流对电压增加速率变缓. 吸附的氧分子提供双重的作用,一方面氧分子提供的能级有利于电子隧穿中心散射区;另一方面氧分子的电子态会破坏碳管的平移对称性,从而降低电子对系统的透射能力. 关键词： 单壁碳纳米管 氧分子吸附 电子输运 非平衡态格林函数     

The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors

At nanometer regime, fabricating the structures with non-overlapped channel and abrupt doping profile is very complicated and sometimes impossible. So, the resultant device experiences some non-ideal effects which have to be predicted and well addressed by simulation before fabrication. In this paper the effects of overlap between gate and source/drain regions on the performance of carbon nanotube field effect transistors have been investigated. The overlapped structure has been simulated with various doping profiles at drain/source and gate region junction tip. The device performance has been investigated in terms of ON current, Off current, ON/Off current ratio, subthreshold swing, delay, and power delay product (PDP). Simulations show that depending on the variations in the effective channel length, the overlap deteriorates some device characteristics and enhances the others. Where the effective channel length decreases (increases), the overlap deteriorates (enhances) the current ratio and subthreshold swing but enhances (deteriorates) the delay and PDP compared to non-overlapped structure. Furthermore, the overlapped structure with graded profile results in lower current ratio and higher subthreshold swing compared to overlapped structure with abrupt profile. At a fixed current ratio, the delay and PDP of overlapped structure with graded profile are more than overlapped structure with abrupt profile but at a fixed channel length, both profiles have approximately equal delay and PDP.     

Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.     

Molecular dynamics study on the field effect ion transport in carbon nanotube

We investigated potassium ion transport in the (5, 5) carbon nanotube by using classical molecular dynamics simulations under applying external force fields. This can be applied to nanoscale ionic-field-effect devices. As the applying external force field increases, the potassium ions rapidly go through the nanochannel. Under the low external force fields, the thermal fluctuation of the nanochannel affected on the tunneling of the potassium ions, whereas the effects of the thermal fluctuation were negligible under the high external force fields.     

栅极电势对强光场下石墨烯场效应管中电子隧穿的影响

利用时域有限差分方法研究了强光场下石墨烯场效应管中栅极电势对电子隧穿的影响. 在强光场下由于光学stark效应,石墨烯场效应管的完美手征透射被抑制.这种抑制除了 可以利用光场来调控外,也可以通过改变栅极电势的宽度、势垒高度等来调控. 研究了非方势垒中电子的隧穿. 研究发现,当电势的倾斜较小时,电子隧穿概率变化不大.而当电势倾斜很大时,电子隧穿概率急剧改变.     

Area effect of patterned carbon nanotube bundle on field electron emission characteristics

Patterned carbon nanotube (CNT) bundles were fabricated using thermal chemical vapor deposition (CVD) method. Patterns of different diameters and distances were defined on Si(100) substrates using photolithography. CNT bundle height was controlled using different acetylene (C₂H₂) flow times. The inter-bundle distance of CNTs to CNT bundle height ratio was maintained at approximately 2, a number predicted to have a maximum field emission for CNT, and left the patterned CNT bundle area as a variable parameter. The relationship between CNT bundle area and the field electron emission characteristics was studied. The lowest threshold electric field (E_th) of 0.7 V/μm was obtained when the total area of patterned CNT bundles was approximately 46%. The result shows that there is an optimal CNT bundle area for electron field emission.