共查询到19条相似文献,搜索用时 71 毫秒
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基于Landauer公式,研究了有限长的非公度和公度双壁碳纳米管的电子输运性顾,结果表明 ,双壁管的几何结构对其电子输运性质有显著的影响:非公度的双壁碳管的电导随能量的不 同,既可以是弹道型的,也可以是非弹道型的;由armchair管组成的公度的双壁碳管的电导 随能量变化呈现快速的电导振荡,并且此快速振荡叠加在背景慢振荡上,而zigzag管组成的 公度双壁管的电导随能量变化只有快速振荡、没有规则的慢振荡背景.
关键词:
碳纳米管
电子输运性质 相似文献
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在连续弹性近似下,采用转移矩阵方法,研究了由不同含Al浓度的异质结(GaAs/AlxiGa1-xiAs)所构成的对称多层异质结构中的声学声子输运性质.结果表明:该结构中的声子透射谱具有与同组分厚度超晶格(GaAs/AlAs )不一样的特征,具体体现在透射曲线振荡幅度与频率等方面;声子透射谱特征与对称异质结构中AlxiGa1-xiAs层的含Al浓度xi(i表示对称轴两边的第i层)的分布有很大的关系,具体表现为:当xi随i的增加而递减时,透射谱线除主波谷外较平滑;而当xi随i的增加而递增时,透射谱振荡明显增大,且主波谷被分裂.声子透射系数还依赖于异质结组分层的厚度,尤其是AlxiGa1-xiAs的厚度.另外,异质结的层数对声子输运也产生一定的影响.
关键词:
输运
声子
异质结 相似文献
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针对传统单结GaN基高电子迁移率晶体管器件性能受电流崩塌效应和自加热效应限制的困境,对新型A1GaN/GaN/InGaN/GaN双异质结高电子迁移率晶体管的直流性质展开了系统研究.采用基于热电子效应和自加热效应的流体动力模型,研究了器件在不同偏压下电流崩塌和负微分电导效应与GaN沟道层厚度的相关.研究发现具有高势垒双异质的沟道层能更好地将电子限制在沟道中,显著减小高电场下热电子从沟道层向GaN缓冲层的穿透能力.提高GaN沟道层厚度可以有效抑制电流崩塌和和负微分输出电导,进而提高器件在高场作用下的性能.所得结果为进一步优化双异质结高电子迁移率晶体管结构提供了新思路,可促进新型GaN高电子迁移率晶体管器件在高功率、高频和高温等无线通讯领域内的广泛应用. 相似文献
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由于导电沟道-源/漏电极界面处可能发生的载流子带间隧穿,传统类金属氧化物半导体(MOS)碳纳米管场效应管呈现双极性传输特性,极大影响了器件性能的提高及其在电路中的应用.为获得具有理想单极性传输特性的类MOS碳纳米管场效应管,本文提出了一种基于双栅材料的器件设计方法.模拟结果表明,通过合理选取调节电极材料,在不影响器件亚阈值斜率的同时,该设计方法不仅能使开关电流比增大6—9个数量级,有效调节阈值范围,而且能有效消除传统类MOS碳纳米管场效应管的双极性传输特性.进一步研究表明,该设计所获得的器件性能提高与调节 相似文献
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基于变形单壁碳纳米管能量色散关系,计算了碳纳米管最低导带的电子速度及有效质量随形变系数变化的各种曲线,以此推测碳纳米管输运性质的稳定性问题.计算结果表明:对于特定类型的碳纳米管,只当其形变发生在某特定方向、且处于低形变(形变系数ε≤002 )区时,电子平均速度vmean及平均有效质量m*mean随形变改变才会很小(相对改变量≤2%),这意味着此时的碳纳米管低偏压电子输运性能是基本稳定的.而其他形变情形,电子平均速度vmean或电子平均有效质量m*mean或两者随形变变化明显,甚至有跃变,这意味着其低偏压电子输运性能是不稳定的,甚至极不稳定.
关键词:
变形单壁碳纳米管
电子速度
电子有效质量
输运性能稳定性 相似文献
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采用量子力学模型,对欠叠栅对传统单质栅碳纳米管场效应管(简称C-CNTFET)和异质栅碳纳米管场效应管(简称HMG-CNTFET)电学特性的影响进行理论研究,该模型基于二维非平衡格林函数(NEGF)泊松方程自洽求解.仿真结果表明,C-CNTFET的截止频率可高达THz量级,另外,通过比较C-和HMG-CNTFET可以看出,CCNTFET增加欠叠栅后能够提高器件的开关速度,但不利于提高器件的开关电流比.在HMG-CNTFET中,欠叠栅的采用不仅能够同时改善亚阈值特性和开关电流比,还能降低输出电导. 相似文献
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Nongelatin dichromated holographic film(NGD) is a new holographic recordingmaterial.Holograms recorded on this material have better environmental stability, higherdiffraction efficiency and stronger real time effect, etc..An experimental study to ascertainthe influence of two electron donors, namely,N,N-dimethylformamide(DMF) and dimethyl-sulfoxide(DMSO),on the real time diffraction efficiency(RTDE) of NGD holograms is car-ried out.The pressence of electron donors not only improves the sensitivity,but also enhancesthe real time effect greatly.RTDE of above 60% at±1 orders of NGD plane transimissiongrating is achieved by introducing electron donors. 相似文献
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Carbon nanotube field-effect transistors (CNTFETs) can be fabricated with Ohmic- or Schottky-type contacts. We focus here on Ohmic CNTFETs. The CNTFETs suffer from band-to-band tunneling which in turn causes the ambipolar conduction. In this paper, to suppress the ambipolar behavior of CNTFETs and improve the performance of these devices, we have proposed application of symmetric double-halo (DH)-doping in CNTFETs. In this new structure, the source-side halo doping reduces the drain-induced barrier lowering (DIBL) and the drain-side halo reduces the band-to-band tunneling effect. Simulation results show in the DH-CNTFET, subthreshold swing below the 60 mV/decade conventional limit can be achieved. Also it decreases significantly the leakage current and drain conductance and increases on–off current ratio and voltage gain as compared to conventional CNTFET. 相似文献
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双极性传输特性是制约碳纳米管场效应管(carbon nanotube field effect transistors,CNFETs)性能提高的一个重要因素.为降低器件的双极性传输特性并获得较大的开关电流比,提出了一种漏端梯度掺杂策略,该策略不仅适合于类MOS碳纳米管场效应管(C-CNFETs),同时也适合于隧穿碳纳米管场效应管(T-CNFETs).基于非平衡格林函数的数值研究结果表明,该策略不仅能有效降低器件的双极传输特性,而且能将器件开关电流比提高数个数量级.进一步研究发现,该掺杂策略在这两类碳纳米管
关键词:
梯度掺杂
带间隧穿
双极性传输
碳纳米管场效应管 相似文献
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用基于第一性原理的密度泛函理论和非平衡态格林函数方法对(4,4)单壁碳纳米管及其吸附氧气分子情况下的平衡态和非平衡态电导性质进行了研究. 发现在小于2 V的偏压下,系统对电压的增加呈现两种不同增长速率的电流响应,其中电压小于1.1 V时电流增加速率较大;而当电压大于该值后,电流对电压增加速率变缓. 吸附的氧分子提供双重的作用,一方面氧分子提供的能级有利于电子隧穿中心散射区;另一方面氧分子的电子态会破坏碳管的平移对称性,从而降低电子对系统的透射能力.
关键词:
单壁碳纳米管
氧分子吸附
电子输运
非平衡态格林函数 相似文献
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At nanometer regime, fabricating the structures with non-overlapped channel and abrupt doping profile is very complicated and sometimes impossible. So, the resultant device experiences some non-ideal effects which have to be predicted and well addressed by simulation before fabrication. In this paper the effects of overlap between gate and source/drain regions on the performance of carbon nanotube field effect transistors have been investigated. The overlapped structure has been simulated with various doping profiles at drain/source and gate region junction tip. The device performance has been investigated in terms of ON current, Off current, ON/Off current ratio, subthreshold swing, delay, and power delay product (PDP). Simulations show that depending on the variations in the effective channel length, the overlap deteriorates some device characteristics and enhances the others. Where the effective channel length decreases (increases), the overlap deteriorates (enhances) the current ratio and subthreshold swing but enhances (deteriorates) the delay and PDP compared to non-overlapped structure. Furthermore, the overlapped structure with graded profile results in lower current ratio and higher subthreshold swing compared to overlapped structure with abrupt profile. At a fixed current ratio, the delay and PDP of overlapped structure with graded profile are more than overlapped structure with abrupt profile but at a fixed channel length, both profiles have approximately equal delay and PDP. 相似文献
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S. D. Hamieh P. Desgreys J. F. Naviner 《The European Physical Journal B - Condensed Matter and Complex Systems》2010,73(2):223-227
Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators
have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a
new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band
minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate
I-V characteristics using VHDL-AMS simulator. 相似文献
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Jeong Won Kang Ki Ryang Byun Ju Yul Lee Sun Cheol Kong Young Wan Choi Ho Jung Hwang 《Physica E: Low-dimensional Systems and Nanostructures》2004,24(3-4):349-354
We investigated potassium ion transport in the (5, 5) carbon nanotube by using classical molecular dynamics simulations under applying external force fields. This can be applied to nanoscale ionic-field-effect devices. As the applying external force field increases, the potassium ions rapidly go through the nanochannel. Under the low external force fields, the thermal fluctuation of the nanochannel affected on the tunneling of the potassium ions, whereas the effects of the thermal fluctuation were negligible under the high external force fields. 相似文献
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Patterned carbon nanotube (CNT) bundles were fabricated using thermal chemical vapor deposition (CVD) method. Patterns of different diameters and distances were defined on Si(100) substrates using photolithography. CNT bundle height was controlled using different acetylene (C2H2) flow times. The inter-bundle distance of CNTs to CNT bundle height ratio was maintained at approximately 2, a number predicted to have a maximum field emission for CNT, and left the patterned CNT bundle area as a variable parameter. The relationship between CNT bundle area and the field electron emission characteristics was studied. The lowest threshold electric field (Eth) of 0.7 V/μm was obtained when the total area of patterned CNT bundles was approximately 46%. The result shows that there is an optimal CNT bundle area for electron field emission. 相似文献