单原子Pt吸附于不同原子暴露终端BiOBr{001}面的第一性原理研究

基于密度泛函理论(density functional theory, DFT)的第一性原理方法研究了暴露不同原子终端的BiOBr{001}表面以及单原子Pt吸附于BiOBr{001}-BiO不同位置的几何构型、电子结构、光学性质和电荷转移.计算结果表明:BiOBr{001}面BiO终端暴露可诱导产生表面态且价带和导带能级向低能方向移动,光氧化性增强,尤其导带下方出现的表面态能级有助于光生电子-空穴对的分离和迁移,光吸收显著增强,且BiOBr{001}面BiO终端的功函数远低于贵金属Pt,有利于电荷定向转移.其次,单原子Pt吸附于BiOBr{001}-BiO为基底的表面,在禁带中间诱导产生杂质能级, Pt吸附于穴位时吸附能最小,光响应能力最好且电荷转移量最大,吸附于顶位和桥位时,形成开放性的贫电子区域,因此可预测穴位为Pt原子的吸附位点,预示其良好的降解有机污染物效果, Pt吸附于BiOBr{001}-BiO的顶位和桥位,具有潜在的CO_2还原或固氮等领域应用.     

PbTe(001)表面原子几何结构和电子结构的第一性原理计算

用第一性原理的密度泛函理论计算了PbTe（001）表面的几何结构和电子结构.计算结果表明：PbTe（001）表面不发生重构，但表面几层原子表现出明显的振荡弛豫现象，其中第一、第二层间距减小4.5%，第二、第三层间距增加2.0%，并且表面层原子出现褶皱.表面带隙在X 点，带隙变宽，在基本带隙中不引入新的表面态，而导带底和价带顶附近等多处出现新的表 面共振态；弛豫后费米面处态密度很低，所以表面结构很稳定. 关键词： 密度泛函理论 表面几何结构 表面电子结构 PbTe     

第一性原理研究BaTiO3(001)表面的电子结构

在密度泛函理论的基础上,采用平面波赝势方法计算了立方相BaTiO₃(001)表面的电子结构.结构优化表明最表层原子都向体内弛豫,且金属原子弛豫幅度最大,同时各层层间距变化呈交错分布.对两种表面结构的总能计算发现TiO₂表面稳定性比BaO表面弱,一方面是由于TiO₂表面结构中存在O-2p表面态,使价带和导带中电子态向高能区域偏移.另一方面,TO₂表面附近Ti—O共价键存在强弱差异,有利于发生表面吸附.而在BaO表面结构中,最表层BaO的存在消除了这种差异,因而其表面稳定性较强. 关键词： 第一性原理 钛酸钡 电子结构 表面能     

不同密度氢吸附金刚石(100)表面的微观结构

利用基于广义梯度近似的密度泛函理论,计算了金刚石(100)表面不同氢吸附密度的平衡态几何结构和态密度.结果表明对于2×1构型,在平行和垂直表面两个方向上发生弛豫,而1×1构型仅在垂直表面方向上发生弛豫.另外,清洁2×1,2×1 ∶0.5H和1×1 ∶1.5H表面,带隙中存在空表面态;而对于1×1 ∶2H和2×1 ∶H两种表面结构,空表面态上移进入导带,带隙中不存在表面态.结合电荷密度分布,探讨了金刚石(100)不同构型和氢吸附密度表面的表面态诱发机理. 关键词： 氢吸附 金刚石 弛豫 表面态     

第一性原理研究BaTiO3(001)表面的电子结构

在密度泛函理论的基础上,采用平面波赝势方法计算了立方相BaTiO3(001)表面的电子结构.结构优化表明最表层原子都向体内弛豫,且金属原子弛豫幅度最大,同时各层层间距变化呈交错分布.对两种表面结构的总能计算发现TiO:表面稳定性比BaO表面弱,一方面是由于TiO2表向结构中存在O-2p表面态,使价带和导带中电子态向高能区域偏移.另一方面,TO2表面附近Tj-O共价键存在强弱差异,有利于发生表面吸附.而在BaO表面结构中,最表层BaO的存在消除了这种差异,因而其表面稳定性较强.     

ZnTe(110)表面电子态及其弛豫对表面电子态的影响

给出了Ⅱ-Ⅵ族半导体化合物ZnTe(110)表面电子特性的理论研究.考虑最近邻的sp³s模型描述体态电子结构，使用散射理论方法，给出了理想和弛豫ZnTe(110)表面的波矢分辨的电子态密度和表面投影带结构.结果表明：弛豫的ZnTe(110)表面在带隙中没有表面态存在.在价带中的表面态及表面共振态和其他弛豫的Ⅲ-Ⅴ族及Ⅱ-Ⅵ族半导体的(110)表面具有相似的特征.与实验结果及第一性原理的自洽赝势计算结果相比，计算的结果符合得很好. 关键词：     

宽禁带半导体材料CuYO2的第一性原理研究

本文利用基于第一性原理的广义梯度近似方法分析研究宽禁带半导体材料CuYO₂能带结构、晶格常数和态密度.计算结果表明,CuYO₂的价带区主要由Cu的3d态和O的2p态构成,而导带区主要由Y的3d态组成.在进行+U修正之后,随着U参量的增加,CuYO₂的价带区和导带区发生分裂,导带区中Y的3d主峰向高能区移动导致导带扩大,带隙也随之扩大,当U取值为3 eV时导带底由L点转变为T点,表明+U计算主要修正CuY₂导带从而能较好的改进理论带隙值.     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

锐钛矿型TiO2(101)面原子几何及弛豫结构的第一性原理计算

采用平面波超软赝势方法计算了锐钛矿型TiO₂(101)面的表面能和表面原子弛豫结构.首先对TiO₂(101)面的6种不同的表面原子终止结构的体系总能量进行了计算,结果表明终止原子为两配位的O原子、次层为五配位的Ti原子的表面结构最为稳定.针对该表面研究了表面能和原子弛豫与模型中原子层数和真空厚度的关系,当原子层数为12层,真空厚度为0.4nm时,表面能收敛度小于0.01J/m².研究发现:表面上两配位的O原子向里移动约0.0012nm,五配 关键词： 第一性原理 2')" href="#">TiO₂ 表面结构 弛豫     

VC(001)弛豫表面构型与电子结构第一性原理研究

用第一性原理方法对VC(001)清洁表面的构型和电子结构进行了详细研究，与TiC(001)面类似，VC(001)面弛豫后形成表面皱褶，其表层V原子和C原子分别朝体相和真空方向移动. 能带计算结果表明，过渡金属碳化物(001)面的能带结构符合刚性带理论模型. 对于VC(001)面，表面态主要处在-30eV附近，其主要成分为表层C原子的2pz轨道. 此外，以表层V原子的3d轨道成分为主的表面态出现在费米能级附近，由于这些表面态以表面法线方向的轨道(3d２z和3dxz/dyz)为主要成分，因此在表面反应中将起到重要作用，从而体现出与TiC(001)面不同的反应性质. 关键词： 过渡金属碳化物 表面态 能带结构     

Surface rumples and band gap reductions of cubic BaZrO3 (001) surface studied by means of first-principles calculations

Electronic properties of the (001) surface of cubic BaZrO$_{3}$ with BaO and ZrO$_{2}$ terminations have been studied using first-principles calculations. Surface structure, partial density of states, band structure and surface energy have been obtained. We find that the largest relaxation appears in the first layer of atoms, and the relaxation of the BaO-terminated surface is larger than that of the ZrO$_{2}$-terminated surface. The surface rumpling of the BaO-terminated surface is also larger than that of the ZrO$_{2}$-terminated surface. Results of surface energy calculations reveal that the BaZrO$_{3}$ surface is likely to be more stable than the PbZrO$_{3}$ surface.     

Surface rumples and band gap reductions of cubic BaZrO3 （001） surface studied by means of first-principles calculations

Electronic properties of the （001） surface of cubic BaZrO3 with BaO and ZrO2 terminations have been studied using first-principles calculations. Surface structure, partial density of states, band structure and surface energy have been obtained. We find that the largest relaxation appears in the first layer of atoms, and the relaxation of the BaO-terminated surface is larger than that of the ZrO2-terminated surface. The surface rumpling of the BaO-terminated surface is also larger than that of the ZrO2-terminated surface. Results of surface energy calculations reveal that the BaZrO3 surface is likely to be more stable than the PbZrO3 surface.     

Electron states and atomic positions at the {001}, {110} and {111} faces of W and Mo

The results of ab initio calculations on the {001}, {110} and {111} surfaces of W and Mo and on the (√2 × √2)R45° reconstructed W {001} surface are presented. A distribution of surface states in reasonable agreement with experiment is found. A simple parametrisation of the short range repulsive force between transition metal atoms is used to predict, for all these surfaces, relaxations which are comparable with those observed. This same parametrisation indicates that the W and Mo {001} surfaces are stable to proposed reconstructive displacements.     

二维三角格点系统中的拓扑陈数

利用紧束缚模型对二维三角周期格点中各能带的陈数分布进行研究.通过严格对角化方法得到体系能量本征值和对应的本征态，再利用Kubo公式计算出量子化的霍尔电导、态密度及各扩展态对应的陈数.在傅里叶变换下将哈密顿量转换到k空间从而得到体系的能谱分布.研究表明：次近邻格点之间的跳跃积分t'的不同取值影响体系各能带对应的陈数分布，计算得到当t'=1/2时体系三个能带从低到高对应的陈数分布为{-4，5，-1}，t'=-1/2时其对应陈数分布变化为{2，-4，2}，而t'=±1/4时对应的陈数分布都为{2，-1，-1}.同时发现：能谱帯隙的宽度和对应霍尔平台的宽度一致，并且k空间的能带越平坦，其对应的在霍尔电导跳跃处的态密度峰就越高越尖锐，而该处霍尔电导跳跃就越陡峭.     

Ab-initio calculation of the electronic structure and energetics of the unreconstructed Au(001) surface

The electronic structure, surface and relaxation energies, and the electric field gradient for the unreconstructed Au(001) surface were calculated by means of the ab-initio all-electron full-potential linearized augmented plane wave slab method. The valence states were calculated within the standard semi-relativistic approach whereas the core states are treated in a fully relativistic way. The Au(001) surface was modelled by free slabs of 5, 7, and 9 layers. From the 9-layer calculation a work function of 5.39 eV was obtained. For the surface energy a value of 1.30 J/m² for the unrelaxed geometry was derived from the total energies of the 7- and the 9-layer slabs. From total energy minimization of the 7-layer slab, a negative, inward relaxation of −2.6% and a relaxation energy of 14.3 × 10⁻³ J/m² were derived. To discuss a mechanism of reconstruction, particular surface states were analyzed in detail in terms of the band structure, layer-dependent density of states and the charge density distribution. Differences of surface and central-layer charge densities show a gain of charge in z-direction localised below and also, to a smaller extent, above the surface atoms. We find a very small gain of delocalised charge in the surface plane between the nearest neighbour positions at the expense of more localised s-d hybridised states. The electric field gradient component Φ_zz was obtained in a two energy window calculation for which the Au5p states were also treated as band states. The resulting Φ_zz values are −16.50 × 10¹⁷ V/cm² surface layer, and −3.3 × 10¹⁷ V/cm² for the subsurface layer.     

立方相Na_(1/2)Bi_(1/2)TiO_3和K_(1/2)Bi_(1/2)TiO_3的电子结构和结构不稳定性的第一性原理比较研究

采用基于密度泛函理论的第一性原理方法比较研究了Na1/2Bi1/2TiO3和K1/2Bi1/2TiO3的电子结构、离子位移势能面和Γ声子等性质.结果表明,Na1/2Bi1/2TiO3和K1/2Bi1/2TiO3的电子结构很相似,价带由O 2p电子态主导并包含部分Ti 3d和Bi 6p电子态,导带低能部分由Ti 3d空轨道构成;K取代Na后其Ti—O和Bi—O键的键强略有增加.两者的离子位移势能面也很接近,O离子的偏心位移对结构不稳定性起主导作用,且K取代Na后其作用增强.Γ声子都存在3个软模,分析表明软模主要来自O6基团的振动,K取代Na后A2u软模发生硬化.     

First-principles study of electronic and optical properties in wurtzite Zn1-xCuxO

We perform a first-principles simulation to study the electronic and optical properties of wurtzite Zn1 xCuxO.The simulations are based upon the Perdew-Burke-Ernzerhof form of generalised gradient approximation within the density functional theory.Calculations are carried out in different concentrations.With increasing Cu concentration,the band gap of Zn1 xCuxO decreases due to the shift of valence band.The imaginary part of the dielectric function indicates that the optical transition between O 2p states in the highest valence band and Zn 4s states in the lowest conduction band shifts to the low energy range as the Cu concentration increases.Besides,it is shown that the insertion of Cu atom leads to redshift of the optical absorption edge.Meanwhile,the optical constants of pure ZnO and Zn0.75Cu0.25O,such as loss function,refractive index and reflectivity,are discussed.     

Cu/N表面沉积共掺杂TiO_2光催化剂作用机理的理论研究

本文采用基于周期性密度泛函理论研究了Cu/N表面沉积共掺杂对锐钛矿相TiO2(001)面的修饰作用.计算了Cu在不同位置掺杂TiO2(101)面和(001)面的形成能,并在此基础上计算N不同位置掺杂TiO2(001)面及Cu/TiO2(001)面的形成能,通过形成能的比较获得了表面共掺杂的最优化结构.在此基础上计算了最稳定结构的能带结构及态密度,并与S单掺杂TiO2(001)面最稳定结构进行了对比.通过对结果的分析发现:Cu/N在(001)表面的沉积共掺杂有效降低了TiO2的禁带宽度,并在表面形成CuO2相,更利于提高其光催化活性.     

First-principles study of the （001） surface of cubic PbHfO3 and BaHfO3

Using first-principles techniques,we investigate the(001) surfaces of cubic PbHfO3(PHO) and BaHfO3(BHO) terminated with both AO(A=Pb and Ba) and HfO2.Surface structure,partial density of states,band structure,and surface energy are obtained.The BaO surface is found to be similar to its counterpart in BHO.For the HfO2-terminated surface of cubic PHO,the largest relaxation appears on the second-layer atoms but not on the first-layer ones.The analysis of the structure relaxation parameters reveals that the rumpling of the(001) surface for PHO is stronger than that for BHO.The surface thermodynamic stability is explored,and it is found that both the PbO-and the BaO-terminated surfaces are more stable than the HfO2-terminated surfaces for PHO and BHO,respectively.The surface energy calculations show that the(001) surface of PHO is more easily constructed than that of BHO.