Magnetization reversal asymmetry in Fe/MgO(0 0 1) thin films

We study the in-plane magnetization process in 200 Å Fe(0 0 1) thin films grown by sputtering at normal incidence. In spite of this growth geometry, a small uniaxial in plane magnetic anisotropy, whose origin is not totally understood, is found superimposed to the expected cubic biaxial one. This has a dramatic effect both on the reversal process and the domain structure. A combined longitudinal and transversal Kerr study shows the different switching processes (180° walls along the main easy axis versus 90° along the secondary easy axis) depending on the relative orientation of the magnetic field with respect to the Fe crystallographic axes. Remarkably, this two- and sometimes three-step switching process appears only when the field is applied along certain crystallographic directions. These findings are corroborated by domain observations.     

MOKE hysteresis loop method of determining the anisotropy constants of ferromagnetic thin films: fe on GaAs(1 0 0) with overlayers of Au and Cr

This paper presents a quantitative method used to determine the magnetocrystalline anisotropy constants of thin magnetic films from normalized magnetization data measured on a magneto-optic Kerr effect (MOKE) magnetometer. The method is based on a total magnetic energy density model, and incorporates higher order effects in the detected signal. By way of illustration, the method is used to determine the magnetocrystalline anisotropy constants of epitaxial thin Fe films on GaAs substrates, which have different overlayers. It is shown that a Cr overlayer on a 30 ML thick Fe film reduces the uniaxial contribution to the magnetic anisotropy compared with an Au overlayer.     

Surface order dependent magnetic thin film growth: Fe on GaN(0 0 0 1)

X-ray photoemission spectroscopy and X-ray magnetic circular dichroism have been used to study the growth process, chemical composition and magnetic character of iron deposited on ordered and disordered GaN(0 0 0 1) surfaces. On the (1 × 1) ordered surface the Fe grows uniformly but with disruption to the substrate surface, subsequently nitrogen desorbs from the surface, some of which diffuses into the Fe overlayer. The film is magnetically fractured, with high magnetic coercivity and broad switching fields. Conversely, the gallium rich disordered surface protects the underlying substrate from any disruption and initially induces non-uniform growth, the Fe clusters coalesce at ∼12 Å, to produce a uniform film with desirable magnetic characteristics. Films beyond this point (>12 Å) indicate sharp hysteresis loops with low coercivities. For the resultant film (36 Å) we measure a magnetic moment of 2.02 μ_B, in agreement with bulk bcc iron (2.068 μ_B.)     

Study of magnetization reversal and anisotropy of single crystalline ultrathin Fe/MgO(001) film by magneto-optic Kerr effect

The magnetization reversal process of Fe/MgO(001) thin film is investigated by combining transverse and longitudinal hysteresis loops. Owing to the competition between domain wall pinning energy and weak uniaxial magnetic anisotropy,the typical magnetization reversal process of Fe ultrathin film can take place via either an "l-jump" process near the easy axis, or a "2-jump" process near the hard axis, depending on the applied field orientation. Besides, the hysteresis loop presents strong asymmetry resulting from the variation of the detected light intensity due to the quadratic magneto-optic effect. Furthermore, we modify the detectable light intensity formula and simulate the hysteresis loops of the Kerr signal. The results show that they are in good agreement with the experimental data.     

Role of crystal orientation on the magnetic properties of CoFe2O4 thin films grown on Si (1 0 0) and Al2O3 (0 0 0 1) substrates using pulsed laser deposition

We report the influence of crystal orientation on the magnetic properties of CoFe₂O₄ (CFO) thin films grown on single crystal Si (1 0 0) and c-cut sapphire (Al₂O₃) (0 0 0 1) substrates using pulsed laser deposition technique. The thickness was varied from 200 to 50 nm for CFO films grown on Si substrates, while it was fixed at 200 nm for CFO films grown on Al₂O₃ substrates. We observed that the 200 and 100 nm thick CFO-Si films grew in both (1 1 1) and (3 1 1) directions and displayed out-of-plane anisotropy, whereas the 50 nm thick CFO-Si film showed only an (1 1 1) orientation and an in-plane anisotropy. The 200 nm thick CFO film grown on an Al₂O₃ substrate was also found to show a complete (1 1 1) orientation and a strong in-plane anisotropy. These observations pointed to a definite relation between the crystalline orientation and the observed magnetic anisotropy in the CFO thin films.     

Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect

A planar Hall effect(PHE) is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si(001) substrate.Owing to the domain structure of iron film and the characteristics of PHE,the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180°domain wall displacement near the easy axis,respectively.However,the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently.The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement.Furthermore,the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.     

Determination of magnetic axes distribution in epitaxial Fe (0 0 1) micrometric squares by magneto optical technique

In-plane magneto optical hysteresis loops have been used to determine the magnetic axes distribution of crystalline Fe (0 0 1) micrometric squares of different sizes (2.5–10 μm) and separations (0.2 and 0.6 μm). The angular dependence of the magnetization at remanence shows the interplay between the anisotropy of the unpatterned Fe thin film and the anisotropies induced by the patterning process. A rich variety of behaviors are found when the arrays of squares are rotated with regard to the Fe main crystalline directions.     

Origin of perpendicular magnetic anisotropy and evolution of magnetic domain structure of amorphous Pr-TM-B (TM=Fe, Co) films

In this study, the deposition pressure dependence of the compositional ratio, magnetic domain structure, and perpendicular magnetic anisotropy (PMA) of B-containing PrFe- and PrCo-based films, which are rare-earth-transition-metal (RE-TM) films, was investigated. PrFe- and PrCo-based films were fabricated by magnetron sputtering. The film compositions were controlled in a wide range by varying the deposition pressure. On the basis of experimental results, the residual stress of the films was considered to be the possible origin of their PMA. The films showed strong magneto-optical effects over the entire wavelength range of 300-750 nm. Because of the excellent magnetic and magneto-optical (MO) properties of the films, they have high potential for MO applications at wavelengths of red and blue lasers.     

Correlation between local hysteresis and crystallite orientation in PZT thin films deposited on Si and MgO substrates

(0 0 1)-Oriented tetragonal ferroelectric PbZr_0.53Ti_0.47O₃ (PZT) thin films (90 nm of thickness) have been grown on TiO_x/Pt/TiO₂/SiO₂/Si and TiO_x/Pt/MgO substrates. The existence of (1 0 0)-oriented crystallites in the c-axis matrix of the (0 0 1)-oriented films has been evidenced by using four circles X-ray diffraction. Depending on the substrate, the ratio of the lattice parameters c/a was found to be 1.02 (Si) and 1.07 (MgO) and this was correlated with the coercive field values. Local piezoelectric hysteresis loops produced by atomic force microscopy have been taken with profit to characterize the switching properties of the ferroelectric domains at the scale of individual crystallites. In each case, (1 0 0)-oriented crystallites require much higher voltage than (0 0 1)-oriented crystallites for switching. These results are explained by taking into account the strain imposed by the substrate in the film. We conclude that piezoelectric hysteresis loops produced by atomic force microscopy provide very rich information for addressing the local switching property of individual crystallites in PZT thin films.     

Spin reversal and magnetization jumps in ErMexMn1−xO3 perovskites (Me=Ni,Co)

The erbium-based manganite ErMnO₃ has been partially substituted at the manganese site by the transition-metal elements Ni and Co. The perovskite orthorhombic structure is found from x(Ni)=0.2–0.5 in the nickel-based solid solution ErNi_xMn_1−xO₃, while it can be extended up to x(Co)=0.7 in the case of cobalt, provided that the synthesis is performed under oxygenation conditions to favor the presence of Co³⁺. Presence of different magnetic entities (i.e., Er³⁺, Ni²⁺, Co²⁺, Co³⁺, Mn³⁺, and Mn⁴⁺) leads to quite unusual magnetic properties, characterized by the coexistence of antiferromagnetic and ferromagnetic interactions. In ErNi_xMn_1−xO₃, a critical concentration x_crit(Ni)=1/3 separates two regimes: spin-canted AF interactions predominate at x<x_crit, while the ferromagnetic behavior is enhanced for x>x_crit. Spin reversal phenomena are present both in the nickel- and cobalt-based compounds. A phenomenological model based on two interacting sublattices, coupled by an antiferromagnetic exchange interaction, explains the inversion of the overall magnetic moment at low temperatures. In this model, the ferromagnetic transition-metal lattice, which orders at T_c, creates a strong local field at the erbium site, polarizing the Er moments in a direction opposite to the applied field. At low temperatures, when the contribution of the paramagnetic erbium sublattice, which varies as T⁻¹, gets larger than the ferromagnetic contribution, the total magnetic moment changes its sign, leading to an overall ferrimagnetic state. The half-substituted compound ErCo_0.50Mn_0.50O₃ was studied in detail, since the magnetization loops present two well-identified anomalies: an intersection of the magnetization branches at low fields, and magnetization jumps at high fields. The influence of the oxidizing conditions was studied in other compositions close to the 50/50=Mn/Co substitution rate. These anomalies are clearly connected to the spin inversion phenomena and to the simultaneous presence of Co²⁺ and Co³⁺ magnetic moments. Dynamical aspects should be considered to well identify the high-field anomaly, since it depends on the magnetic field sweep rate.     

Effect of surface chemisorption on the spin reorientation transition in magnetic ultrathin Fe film on Ag(0 0 1)

We have investigated the effect of surface chemisorption on the spin reorientation transitions in magnetic ultrathin Fe films on Ag(0 0 1) by means of the polar and longitudinal magneto-optical Kerr effect (MOKE) and X-ray magnetic circular dichroism (XMCD) measurements. It is found by the MOKE that adsorption of O₂ and NO induces the shift of the critical thickness for the transitions to a thinner side, together with the suppression of the remanent magnetization and the coercive field of the Fe film. This implies destabilization of the perpendicular magnetic anisotropy. On the other hand, H₂ adsorption is found not to change the magnetic anisotropy, though the enhancement of the coercive field is observed. The XMCD reveals that although both the spin and orbital magnetic moments along the surface normal are noticeably reduced upon O₂ and NO adsorption, the reduction of the orbital magnetic moments are more significant. This indicates that the destabilization of the perpendicular magnetic anisotropy upon chemisorption of O₂ and NO originates from the change of the spin-orbit interaction at the surface.     

Magnetization reorientation in Ni (1 1 1) ultrathin films studied by low-temperature hysteresis measurements

Surface magneto-optical Kerr effect (SMOKE) magnetometry in the temperature range 10–300 K was exploited to investigate the magnetic properties of high-quality Cu/Ni/Cu/Si(1 1 1) epitaxial heterostructures with thickness of the Ni layer, d_Ni, between 10 and 60 Å. For a fixed temperature, the equilibrium direction of the magnetization is parallel or perpendicular to the film surface, depending on the Ni thickness, because of the competition among shape anisotropy, magnetoelastic anisotropy and interface anisotropy. No reorientation of the magnetization could be observed as a function of temperature, for any of the specimens analyzed, while a large variation of the loop squareness and coercivity was found. This last variation has been qualitatively explained using a theoretical model based on a Green's function technique, valid for a monodomain film with a coherent rotation of the magnetization.     

Tailoring exchange bias by oxidizing Co film across a Cu wedge in Cu(wedge)/CoO/Co/Cu(0 0 1)

A new method was developed to control Co film oxidation in an epitaxially grown Cu(wedge)/Co/Cu(0 0 1) film. By annealing the film at 200 °C within 10⁻⁶ Torr oxygen environment, we find that the top Cu wedge controls the Co underlayer oxidation continuously as a function of the Cu film thickness. Magneto-Optic Kerr Effect measurement shows that the exchange bias of the resulting CoO/Co film exhibits a systematic variation with the Cu thickness, thus offering a new method of tailoring the exchange bias of CoO/Co films.     

Fe,Co共掺杂ZnO薄膜结构及发光特性研究

采用溶胶凝胶法在玻璃衬底上制备了Fe,Co共掺Zn0.9FexCo0.1-xO(x=0,0.03,0.05,0.07)系列薄膜.通过扫描电镜(SEM)、X射线衍射(XRD)、X射线光电子谱(XPS)和光致发光(PL)谱对薄膜样品的表面形貌、晶体结构、成分和光学性能进行了研究.XRD结果表明所有ZnO薄膜样品都呈六方纤锌矿结构,在样品中没有观察到与Fe和Co相关的团簇,氧化物及其他杂相的衍射峰,表明共掺杂改善了Fe或Co在ZnO的分散性.XPS测试结果揭示样品中Co离子的价态为+2价;Fe离子的价态为+2价和+3价共存,但Fe相对浓度的增大导致Fe3+含量增加.所有样品的室温光致发光谱(PL)均观察到紫外发光峰和蓝光双峰,其中Fe,Co共掺ZnO薄膜的紫外发光峰较本征ZnO出现蓝移,蓝光双峰峰位没有变化,但发光强度有所减弱;而掺杂ZnO薄膜的绿光发光峰几乎消失.最后,结合微结构和成分分析对薄膜样品的发光机理进行了讨论.     

FMR and SMFMR investigation of epitaxial Fe/GaAs(0 0 1) thin films with Si and Ge overlayer

The magnetic anisotropy and magnetoelastic properties of epitaxial iron films prepared by DC magnetron sputtering on single crystal GaAs(0 0 1) substrate and covered with a protective Si or Ge layer have been investigated by means of the ferromagnetic resonance and strain-modulated ferromagnetic resonance. It has been shown that the uniaxial and cubic anisotropy constants as well as two magnetoelastic constants strongly depend on the thickness of the film. The surface components of the cubic anisotropy and magnetoelastic constants have been determined.     

Structure and magnetism of bcc(1 1 0)-like Fe films grown on Cu(0 0 1) via ion beam triangulation and spin-polarized electron capture

The structure and magnetism of thin epitaxial Fe layers grown on Cu(0 0 1) is investigated by grazing scattering of fast H and He atoms. Information on the atomic structure of the film and substrate surfaces is obtained by making use of ion beam triangulation with protons. The magnetic behavior is studied via the polarization of light emitted after capture of spin-polarized electrons into excited atomic terms during scattering of He atoms. For the formation of bcc(1 1 0)-like Fe films at higher coverages, we detect differences in structural and magnetic properties for room and low temperature growth. We suggest that the crystalline structure depends on the film morphology and that Cu impurities affect the magnetic properties.     

Mechanism of two-dimensional chiral growth of 6,13-pentacenequinone thin films on Si(1 1 1)

Thin film growth of 6,13-pentacenequinone (C₂₄H₁₂O₂, PnQ) on Si(1 1 1)-7 × 7 at room temperature (RT) was studied by low-energy electron microscopy (LEEM) and ab initio density functional theory (DFT) calculations. Our experiments yielded direct microscopic observation of enantiomorphic evolution mechanism in the initial stage of the chiral-like growth of PnQ islands, under kinetic growth conditions. We observed that the faster growth direction aligns with the direction of easier molecule incorporation, or lowest kink formation energy, rather than along the lowest energy step. Real time observation of the growth and subsequent relaxation of island shape revealed that kinetically stiff direction differs from the thermodynamic one. This feature together with anisotropic mass incorporation determines the enantiomorphic evolution and rotational arrangement of crystallites during the growth of elongated organic molecules, like PnQ.     

First principles studies of Fe/Co superlattices and multilayers with bcc (0 0 1) and (1 1 0) orientations

The layer resolved magnetic moments and magnetic anisotropy energy of Fe/Co superlattices and multilayers with bcc (0 0 1) and (1 1 0) orientations obtained from first principles simulations are reported here. The magnetic moment of Fe atoms are found to depend on the geometry, coordination number and proximity to Co atoms, whereas that of Co remains almost constant in the superlattices and multilayers. Mixing of atoms at the interface resulted in enhanced Fe magnetic moment while that of Co is unaffected. The magnetic anisotropy energy in superlattices and multilayers are found to be larger than the corresponding values of bulk counterparts. Calculated easy axis of magnetization is in the plane for all superlattice compositions considered in the study, while that in multilayers, changes with crystalline orientation and thickness of Co layers.     

Argon and krypton ion-induced changes in permalloy thin films

The effects of 75-keV Ar and 100-keV Kr ion irradiations of 72-nm thin DC-sputtered permalloy (Ni₈₁Fe₁₉) films on Si(100) wafers were studied at fluences of up to 10¹⁶ ions/cm². The changes of the structural and magnetic properties were measured via X-ray diffraction, Rutherford backscattering spectroscopy, and magneto-optical Kerr effect. The irradiations increase the lattice constant and improve the crystallinity of the samples. They induce also strong changes of the magnetic polarisation and the coercive field for increasing ion fluence. The hysteresis loops suggest that, with increasing ion fluence, the reversal of the magnetisation changes gradually from rotation-dominated in the as-deposited films to domain-wall-motion dominated at the highest ion fluences. The results are compared with those obtained for Ni-, Cr-and Xe-ion irradiated permalloy films.