Structural Distortion and Defects in Ti_3AlC_2 irradiated by Fe and He Ions

Ti_3AlC_2 samples are irradiated in advance by 3.5 MeV Fe-ion to the fluence of 1.0×10~(16) ion/cm~2,and then are implanted by 500 keV He-ion with the fluence of 1.0×10~(17) ion/cm~2 at room temperature.The irradiated samples are investigated by grazing incidence x-ray diffraction(GIXRD) and transmission electron microscopy(TEM).GIXRD results show serious structural distortion,but without amorphization in the irradiated samples.Fe-ion irradiation and He-ion implantation create much more serious structural distortion than single Fe-ion irradiation.TEM results reveal that there are a large number of defect clusters in the damage region,and dense spherical He bubbles appear in the He depositional region.It seems that the pre-damage does not influence the growth of He bubbles,but He-ion implantation influences the pre-created defect configurations.     

离子辐照单晶Si损伤效应的研究

回顾了低能离子注入单晶Si经由核弹性碰撞引起的损伤特征及其常规的研究方法,介绍了快重离子辐照单晶Si经由电子能损引起的损伤特点及研究现状,并对该领域的研究作了展望. The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...     

Modeling the applicability of linear energy transfer on single event upset occurrence

Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.     

Effects of helium irradiation dose and temperature on the damage evolution of Ti_3SiC_2 ceramic

The effects of 400 keV helium ion irradiation dose and temperature on the microstructure of the Ti_3SiC_2 ceramic were systematically investigated by grazing incidence x-ray diffraction, scanning electron microscopy, and transmission electron microscopy.The helium irradiation experiments were performed at both room temperature(RT) and 500℃ with a fluence up to 2.0 × 10~(17) He~+/cm~2 that resulted in a maximum damage of 9.6 displacements per atom.Our results demonstrate that He irradiations produce a large number of nanometer defects in Ti_3SiC_2 lattice and then cause the dissociation of Ti_3SiC_2 to TiC nano-grains with the increasing He fluence.Irradiation induced cell volume swelling of Ti_3SiC_2 at RT is slightly higher than that at 500℃, suggesting that Ti_3SiC_2 is more suitable for use in a high temperature environment.The temperature dependence of cell parameter evolution and the aggregation of He bubbles in Ti_3SiC_2 are different from those in Ti_3AlC_2.The formation of defects and He bubbles at the projected depth would induce the degradation of mechanical performance.     

Fermi level pinning effects at gate–dielectric interfaces influenced by interface state densities

The dependences of Fermi-level pinning on interface state densities for the metal–dielectric, ploycrystalline silicon–dielectric, and metal silicide–dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal–dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon–dielectric interface and the metal silicide–dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor(MOS) technology.     

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.     

Optical spectroscopy study of damage evolution in 6H-SiC by H_2~+ implantation

Lattice defects induced by ion implantation into Si C have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in Si C is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-ke V H_2~+ implantation and thermal treatment in the microstructure of 6 H-Si C single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700℃ to 1100℃. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.     

Discussion of the metric in characterizing the single-event effect induced by heavy ions

The single-event effect(SEE) is the most serious problem in space environment.The modern semiconductor technology is concerned with the feasibility of the linear energy transfer(LET) as metric in characterizing SEE induced by heavy ions.In this paper,we calibrate the detailed static random access memory(SRAM) cell structure model of an advanced field programmable gate array(FPGA) device using the computer-aided design tool,and calculate the heavy ion energy loss in multi-layer metal utilizing Geant4.Based on the heavy ion accelerator experiment and numerical simulation,it is proved that the metric of LET at the device surface,ignoring the top metal material in the advanced semiconductor device,would underestimate the SEE.In the SEE evaluation in space radiation environment the top-layers on the semiconductor device must be taken into consideration.     

High performance infrared detectors compatible with CMOS-circuit process

A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique. In this route, multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon, and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation. The fabricated prototype device exhibits an excellent photoelectric response performance. With a direct current(DC) bias voltage of-2.3 V, the device detectivity to blackbody irradiation is as high as 5×10~(13) cm·Hz~(1/2)/W, which corresponds to a device responsivity of nearly 4.6 A/W, showing their potential applications in infrared detection, infrared astrophysics, and extraterrestrial life science. In particular, the developed device preparation process is compatible with that for the CMOS-circuit, which greatly reduces the manufacturing cost.     

Comparison study of the charge density distribution induced by heavy ions and pulsed lasers in silicon

Heavy ions and pulsed lasers are important means to simulate the ionization damage effects on semiconductor materials. The analytic solution of high-energy heavy ion energy loss in silicon has been obtained using the Bethe-Bloch formula and the Kobetich-Katz theory, and some ionization damage parameters of Fe ions in silicon, such as the track structure and ionized charge density distribution, have been calculated and analyzed according to the theoretical calculation results. Using the Gaussian function and Beer＇s law, the parameters of the track structure and charge density distribution induced by a pulsed laser in silicon have also been calculated and compared with those of Fe ions in silicon, which provides a theoretical basis for ionization damage effect modeling.     

Ion dose uniformity for planar sample plasma immersion ionimplantation

In spite of recent progress on plasma immersion ion implantation (PIII) in semiconductor processing, for example, formation of silicon on insulator and shallow junctions, ion dose, and energy uniformity remains a major concern. We have recently discovered that the sample stage (chuck) design can impact ion uniformity significantly. Using a theoretical model, we have investigated three different chuck designs and conclude that insulators on the stage can alter the adjacent electric field and ion trajectories. Even though the conventional stage design incorporating a quartz shroud reduces the load on the power supply and contamination, it yields ion dose and energy nonuniformity unacceptable to the semiconductor industry. Thus, for semiconductor applications, the stage should be made of a conductor, preferably silicon or silicon coated materials and free of quartz     

采用常规状态方程计算氦-3热力性质的可行性研究

3He作为一种特殊的工质在低温工程、基础物理学和空间技术等领域获得重要应用,这些应用需要可靠的3He热力学性质数据。但是目前没有适用于3He的宽范围状态方程。不仅如此,而且有关的热物性实验数据也十分稀缺,这给应用3He的研究人员带来了困难。本文基于全面收集和整理有关3He的各类数据,通过编写计算机程序,考察了五种常用的状态方程(理想气体状态方程,范德瓦尔方程,RK方程,RKS方程和PR方程)用于计算3He在4K~100K温区定压下比容-温度关系的可行性,并将计算结果与实验数据进行了比较。这些比较结果将为3He状态方程的研究提供有价值的参考。     

Semiconductor processing

The impact of ion implantation on present day semiconductor device processing and future applications to simplify and improve processing are described.

So far implantation has generally been used to introduce electrically active dopants into the semiconductor but it can also be used to improve other stages of the technology of making semiconductor devices. Ion implantation can be used to improve masks, etching, step coverage, and slice distortion and such applications are reviewed.

The many processes involved in making semiconductor devices interact in a complex way. Apparently small changes, such as replacing depositions by implantation, can lead to unsatisfactory device properties unless significant changes are made in subsequent processing. The complex interactions make the design of new processes critical if optimum properties are to be achieved. Special constraints can be placed on the implantation process itself. Examples are given of these interactions.     

Plasma immersion ion implantation for silicon processing

Plasma Immersion Ion Implantation (PIII) is a technology which is currently widely investigated as an alternative to conventional beam line implantation for ultrashallow doping beyond the 0.15 μm technology. However, there are several other application areas in modern semiconductor processing. In this paper a detailed discussion of the PIII process for semiconductors and of actual as well as future applications is given. Besides the well known advantages of PIII — fast process, implantation of the whole surface, low cost of ownership — several peculiarities — like spread of the implantation energy due to finite rise time or collisions, no mass separation, high secondary electron emission — must be mentioned. However, they can be overcome by adjusting the system and the process parameters. Considering the applications, ultrashallow junction formation by PIII is an established industrial process, whereas SIMOX and Smart‐Cut by oxygen and hydrogen implantation are current topics between research and introduction into industry. Further applications of PIII, of which some already are research topics and some are only investigated by conventional ion implantation, include seeding for metal deposition, gettering of metal impurities, etch stop layers and helium implantation for localized lifetime control.     

Effects of helium implantation on mechanical properties of (Al_(0.31)Cr_(0.20)Fe_(0.14)Ni_(0.35)) O high entropy oxide films

It is widely accepted that helium(He) bubbles can prevent dislocations from moving and causing hardening and embrittlement of the material. However, He can affect the mechanical properties of materials in various ways. In this work,ultrafine nanocrystal high entropy oxide(HEO) films with He implantation are prepared by using a radio frequency(RF)reactive magnetron sputtering system to investigate the effects of He bubbles located at grain boundary on the mechanical properties of the films. The mechanical properties of the HEO films are investigated systematically via nanoindentation measurements. The results indicate that the grain boundary cavities induced by He implantation can degrade the hardness,the elastic modulus, and the creep resistance of the HEO films. The mechanical properties of the HEO films are sensitive to the interaction between the He bubbles and the dominating defects.     

Application of Autoradiography to the Investigation of New Doping Techniques of Semiconductor Materials

The development of technology of new semiconductor devices requires fundamental studies of a number of phenomena taking place in semiconductors during the doping process or accompanying the doping process.

These studies are concerned with the following problems:

1. Diffusion of gold in silicon and the effect of diffusion layers (particularly phosphorus layers) and epitaxial silicon layers on the distribution of gold in thin silicon plates.

2. Distribution of admixtures in silicon introduced with the aid of the ion implantation technique. Our studies concerned with the second of the above mentioned problems comprised an autoradiographic examination of the homogeneity of the beam of phosphorus ions implanted in silicon, and a study of some apparatus factors and of the purity of the basic material on the implantation.     

温度对bcc铁中He行为影响的模拟研究

温度对bcc铁中的He行为有重要的影响,基于bcc晶格的晶格动力学蒙特卡罗（Lattice Kinetic Monte Carlo,LKMC）方法,模拟研究了298—1298 K范围内温度对bcc铁中He行为的影响.结果表明：温度对bcc铁中He行为的影响可以分为4个阶段：（1）298—598 K,（2）598—798 K,（3）798—998 K,（4）998—1298 K.第一阶段随着温度的增加,晶粒内He原子浓度略有降低,但He泡中平均He原子个数迅速增加;第二阶段随着温度的增加,晶粒内的He原子浓度迅速降低,但He泡中平均He原子个数几乎不变;第三阶段随着温度的增加,晶粒内的He原子浓度和He泡中平均He原子个数均迅速减少;第四阶段随着温度的增加,晶粒内He原子浓度以及He泡中平均He原子个数均有所增加,到1298 K时,晶粒内He原子浓度与室温时相近,几乎没有He原子从铁晶粒内逃逸出.模拟结果与文献正电子湮灭实验结果有很好的吻合. 关键词： bcc铁 He 晶格动力学蒙特卡罗 温度     

Ion doping of gallium arsenide

Conclusion The survey presented shows that despite the intensive study of the physical problems of ion implantation in GaAs, there is still a number of questions to investigate. Among them are: The role of anomalous diffusion and channeling in the formation of concentration profiles, the anomalous diffusion mechanism, the influence of radiation defects and residual impurities as well as the form of the coating, the interaction between impurities and defects under ion implantation, and the identification of radiation defects, A further study of the above-mentioned questions will permit extension of the application of the ion implantation method to obtain GaAs semiconductor instruments and realization of still unused possibilities of this powerful method of modern semiconductor technology.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 76–90, January, 1980.     

Characterization of nano-depth junctions in silicon by using Photo-Carrier Radiometry (PCR)

Non-contact, non-intrusive Photo-Carrier Radiometry (PCR) was used for monitoring nano-depth junctions in industrial-grade silicon wafers. The silicon wafers were implanted with arsenic to the dose of 5E10¹⁴ cm^-2. The junction depth was in the 30 nm to 100 nm range. Quantitative results for PCR sensitivity to the junction depth and implantation energies are presented. This laser-based carrier-wave technique monitors harmonically photo-excited and recombining carriers and shows great potential advantages for the characterization of multiple semiconductor processes such as ion implantation, ultra shallow junction (USJ) depth determination and other Si wafer process steps.