Protonic Conduction in P2O5-SiO2 Glasses Prepared by Sol-Gel Method

Protonic conduction in 10P2O5·90SiO2 and 20P2O5·80SiO2 (mol %) glasses prepared by sol-gel processing was investigated as a function of the content of molecular water adsorbed in the pores. The results show that the electrical conductivity of the glasses containing adsorbed molecular water varies exponentially with the reciprocal absolute temperature and increases with the increase of the content of the adsorbed molecular water. The double-bonded oxygen and the high affinity of phosphorus for oxygen make protons easily to release and transfer, which is favorable to the protonic conductivity.     

Synthesis of Bi2O3 and Bi4(SiO4)3 Thin Films by the Sol-Gel Method

Bi2O3 thin films were prepared by dipping silica slides in ethanolic solutions of tris(2,2-6,6-tetramethylheptane-3, 5-dionato)bismuth(III) [Bi(dpm)3] [1] and heating in air at temperatures 500°C. Bi4(SiO4)3 homogeneous thin films were obtained from the reaction of the bismuth oxide coating with the silica glass substrate at temperatures higher than 700°C. For heat treatments at temperatures between 600°C and 700°C, Bi2SiO5 coatings were obtained. The composition and microstructure evolution of the films were determined by Secondary Ion-Mass Spectrometry (SIMS), X-Ray Photoelectron Spectroscopy (XPS) and Glancing Angle X-Ray Diffraction (GA-XRD). The synthesis procedure was reproducible and allowed the control of the Bi2O3 phase composition. Moreover, the thin film annealing parameters were correlated with the formation of bismuth silicates, among which Bi4(SiO4)3 (BSO) is very appealing for the production of fast light-output scintillators [2].     

Effects of Thermal Treatment on the Structure and Properties of SiO2-TiO2 Gel Films on Silicon Substrates

Solution derived thin films of molar composition 90SiO₂-10TiO₂ deposited on c-Si substrates, for use as planar waveguides are characterized in terms of thickness and refractive index, by ellipsometry, as a function of isothermal heat treatments. The structural evolution of the films with thermal treatment is followed by infrared spectroscopy. The estimated average Si–O–Si intertetrahedral bond angle increases from 137°, at room temperature, to 144°, after heating at 900°C. The films should be annealed at T > 800°C, in order to release the residual stresses.     

Photoelectrochemical Properties of Sol-Gel Nb2O5 Films

Structural, optical, electro and photoelectrochemical properties of amorphous and crystalline sol-gel Nb₂O₅ coatings have been determined. The coatings are n-type semiconductor with indirect allowed transition and present an overall low quantum efficiency ( < 4%) for UV light to electric conversion. The photoconducting behavior of the coatings is discussed within the framework of the Gärtner and Södergren models. Improvement can be foreseen if Nb₂O₅ coatings can be made of 10–20 nm size nanoparticles.     

Strategies for Spatially Separating Molecules in Mesostructured Sol-Gel Silicate Films

Three strategies for placing molecules in designated regions of mesostructured thin films made by the sol-gel dip-coating technique are demonstrated. These strategies all involve one-step syntheses where all of the components are present in the sol from which the substrate is pulled. Silicate films templated by ionic surfactants contain three spatially-separated regions: a silicate framework, an organic region formed by the hydrocarbon tails of the surfactants, and an intervening ionic interface formed by the charged surfactant head groups. The first method exploits lipophilic interactions between the molecule and the micelle to place it in the organic region. The second method uses chemical bonding of multiple trialkoxysilane groups in a three dimensional array on the molecule to place it in the silica framework. The third method uses multiple functionality at opposite sides of the molecule to enable it to span two regions. Luminescent molecules are used, and spectroscopy monitors the formation.     

Preparation and Characterization of MgO Thin Films by a Novel Sol-Gel Method

MgO thin films have been prepared on Si substrates by a novel and simple sol-gel method using magnesium nitrate and collodion as starting material. Solutions consisting of magnesium nitrate in a mixture of collodion and ethanol were spin-coated onto silicon substrates. It was found that collodion was a necessary component to form stable sols and the crystallization and structures were clearly dependent on the amount of the collodion and the annealing temperature. The MgO thin films with good crystallization were obtained after annealing at 800°C. Meanwhile, the microstructure of the MgO films was examined by transmission electron microscopy and atomic force microscopy.     

Sol-Gel Preparation of Fast Proton-Conducting P2O5-SiO2 Glasses

We have investigated the proton conductivities of the sol-gel-derived P₂O₅-SiO₂ glass at –50 to 120°C. The obtained glass is porous, where the surface area, pore volume and pore diameter are 740 m²/g, 0.5 cm³/g and <5 nm, respectively. The freezing temperature of water molecules adsorbed in the pores was –20°C, which is much lower than that of free liquid water due to the quantum size effect of the water confined in the pores. The electrical conductivities followed the Arrhenius equation in the temperatures between –20 and 120°C. Below –20°C, the adsorbed-water molecules were frozen, resulting in a rapid decrease of the proton conductivity. Considering the high conductivity, chemical and thermal stability, this oxide glass membranes have potential for the fuel cell membrane.     

Relation Between Aggregation and Heterogeneity of Obtained Structure in Sol-Gel Derived CaO-P2O5-SiO2

Potentially bioactive sol-gel derived CaO-P2O5-SiO2 systems are studied and the influence of aggregation mechanism on the gel structure is discussed. A rheological measuring technique is used to monitor the aggregation process and the results are related to heterogeneity of the obtained gel structure. The results indicate that heterogeneity is produced in the sol-gel transition when calcium nitrate and phosphoric acid are used as precursors of CaO and P2O5. This destroys the correlation between bioactivity and the calcium and phosphorus content of the gel derived glasses.     

Crystallization Behavior of SiO2-TiO2 Sol-Gel Thin Films

The aim of this work was to investigate the crystallization behavior of thin films of SiO₂−TiO₂ made by the sol-gel process as function of the TiO₂ content and the temperature and time of heat treatment. Precursor solutions were prepared by hydrolysis of TEOS (tetraethoxysilane) and TPOT (titaniums tetraisopropoxide). Multilayer films were spun on single crystal silicon wafers. The compositions studied were (on a molar percentage basis) 20TiO₂−80SiO₂, 30TiO₂−70SiO₂, 40TiO₂−60SiO₂ and pure TiO₂. The films were heat treated at different temperatures between 300°C and 1200°C, for different periods of time (30 s-90 h). The crystallization kinetics were followed by micro-Raman spectrometry. Grazing incidence X-ray diffraction showed that the films crystallized into one or both of two crystalline phase of TiO₂: anatase and rutile (for pure TiO₂ only). The volume fractions of the crystalline phase varied from very low values (<1%), up to 100%, for a TiO₂ sample heat treated at 800°C for 8 hours. The results show that the volume fraction of crystalline phase is strongly influenced by the heat treatment temperature and also, to a smaller extent, by the heat treatment time. The most important parameter, however, is the composition of the films: the higher their TiO₂ concentration, the lower is the crystallization temperature and the larger is the crystallized fraction.     

Hydrogen Gas Sensing of High Electrical Conducting-P2O5-SiO2 Glasses Prepared by Sol-Gel Process

High proton-conducting P₂O₅-SiO₂ glass was applied to the electrolyte of the hydrogen concentration cell for hydrogen gas sensing. 5P₂O₅·95SiO₂ glass was prepared using the sol-gel method and its electrical conductivity and electromotive force were measured at 50°C as a function of both the ambient humidity and hydrogen gas concentration. The electrical conductivities increased with increasing humidity and reached 10^–2 S/cm at 90% relative humidity. The electromotive force of the hydrogen concentration cell, where the glass was used as a membrane, showed good Nernstian response to hydrogen pressure in the high relative humidity region.     

Sol-Gel Preparation and Photoelectrochemical Properties of Fe2TiO5 Thin Films

Polycrystalline Fe₂TiO₅ films were prepared on nesa silica glass substrates by the sol-gel method, and their photoanodic properties were measured in a three-electrode wet cell with an aqueous buffer solution of pH = 7. Gel films were crystallized into Fe₂TiO₅ when fired at 500°C. The photoanodic current significantly increased when the films were fired at 700°C, and then decreased with increasing firing temperature. Thicker films obtained by repeating the gel film deposition and firing showed smaller photocurrent, and the 50 nm thick film prepared via non-repetitive deposition exhibited the maximum photocurrent. Although the photoresponse was extended to wavelengths near 500 nm, the maximum quantum yield was as low as 0.12 at a wavelength of 340 nm.     

NiO-SiO2 Sol-Gel Nanocomposite Films for Optical Gas Sensor

Recently nanocomposites with sensoring function are becoming a new area of interest in the field of optical gas sensor. In fact, the optical transmittance of nano-particles or thin films has been reported to be changed by atmosphere gases. In particular it was found that NiO, Co₃O₄ and Mn₃O₄ thin films showed reversible decrease in the Vis-NIR absorption due to CO.Aim of this work is the synthesis and the characterization of SiO₂ sol-gel glass films doped with NiO nanocrystals.Films of composition (100 – X)SiO₂-XNiO with X = 10, 20, 40, were obtained by mixing a matrix solution of Si(OC₂H₅)₄ (TEOS) and CH₃Si(OC₂H₅)₃ (MTES) as SiO₂ precursors, with a doping solution containing NiCl₂ as precursor for NiO particles.3-Aminopropyltriethoxysilane (3-APTES), bearing either an ammine group capable of coordinating the Ni ions and hydrolysable siloxane groups for anchoring the metal complex moiety to the silicate matrix, was used as bifunctional ligand.Transmission electron microscopy micrographs showed a uniform distribution of round shaped nanoparticles in film heated at 500°C with a mean diameter of 2.5 nm.The film composition evaluated from Rutherford backscattering spectrometry was in good agreement with the nominal one. As expected the density of the films heated at 1000°C is much higher than the density of the film heated at 500°C due to a residual porosity. Fourier transform infrared spectra also confirmed the presence of residual porosity in the films heated at 500°C.     

Preparation and Properties of Highly Oriented Sr0.3Ba0.7Nb2O6 Thin Films by a Sol-Gel Process

We succeeded in the preparation of epitaxial or highly oriented strontium-barium niobate (Sr_0.3Ba_0.7Nb₂O₆) thin film by a sol-gel process. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)₅ as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. Sr_0.3Ba_0.7Nb₂O₆ film sintered at 900°C on MgO(1 0 0) was oriented with c-axis perpendicular to the substrate surface. Sr_0.3Ba_0.7Nb₂O₆ film sintered at 700°C on SrTiO₃(1 0 0) was an epitaxial and oriented with c-axis in parallel to the substrate surface. Transmittance of Sr_0.3Ba_0.7Nb₂O₆ film (film thickness: 144 nm) was more than 60% at the range from 400 to 800 nm. Refractive index was 2.33 at 633 nm. Dielectric constant and dielectric loss of the Sr_0.3Ba_0.7Nb₂O₆ thin films prepared on polycrystal Pt substrates were 600 and 0.06 at room temperature and 1 kHz, respectively. The curie temperature (T_c) of polycrystalline Sr_0.3Ba_0.7Nb₂O₆ thin films was about 200°C. At room temperature and 50 kHz, remanent polarization (P_r) and coercive field (E_c) of the polycrystalline thin films were 1.79 C/cm² and 2.69 kV/cm, respectively.     

Electrical Properties of Sol-Gel Processed Amorphous BaTiO3 Thin Films

BaTiO₃ thin films were prepared on single crystal silicon (1 0 0) and platinum substrates by sol-gel technique. Amorphous films with thickness uniformity were obtained by spinning the solution at 3000 rpm for 30 s and by post-deposition annealing at 400°C. The films exhibited good dielectric and insulating properties. The dielectric constant and dissipation factor at a frequency of 100 kHz were 17 and 0.20, respectively, for 1400 Å thick film on platinum substrate (MIM). The corresponding values were 16 and 0.015 for films on Si (MIS). Dielectric properties were also studied as functions of frequency and voltage. The C-V curve for MIS structure exhibited a hysteresis. The density of interface states recharged during the bias cycle in hysteresis measurement was estimated to be of the order of 2.10 × 10¹¹ cm^–2 and total oxide charge density was about 4.28 × 10¹¹ cm^–2. I-V measurements were performed on films of different thicknesses. The leakage current densities at 5 V for the films having thicknesses 1400 and 2800 Å were 0.86 and 0.11 A/cm² respectively. The conduction mechanism is found to be Poole-Frenkel and Schottky mechanisms at low and high fields, respectively.     

Selective Formation of Spinel Iron Oxide in Thin Films by Complexing Agent-Assisted Sol-Gel Processing

The structure of iron oxide was controlled by regulating the hydrolytic polymerization of aquo iron complexes with organic polydentate ligands such as diols. Iron oxides were prepared by calcining the precursor polymers obtained from iron nitrate nonahydrate and diols. When the diols were 1,2-pentanediol, 1,2-hexanediol and 1,2-octanediol, α-Fe₂O₃ with corundum structure appeared exclusively or as the main crystalline phase, in spite of the amount of diol used and the calcination temperature. In the case of 1,2-decanediol and 1,2-dodecanediol, when five moles of the diols were used to one mole of iron nitrate and the calcination temperatures were below 400°C, ψ-Fe₂O₃ with spinel structure appeared as the main phase and, when less than five moles of the diols were used, α-Fe₂O₃ appeared exclusively or as the main phase, irrespective of the calcination temperature. This tendency was also observed in thin films. Thus, a transparent magnetic film composed of γ-Fe₂O₃ could be prepared by applying a benzene solution of the iron polymer, obtained with 5 equivalents of 1,2-decanediol, on quartz and calcining the gel film at 350°C.     

XPS Analysis of Lead Zirconate Titanate Thin Films Prepared Via a Sol-Gel Process

The crystalline phase and composition of sol-gel-derived lead zirconate titanate (PbZr _x Ti_{1 – x} O₃, PZT) thin films were determined by an X-ray photoelectron spectroscopic (XPS) data processing technique. As a result, it was proved that existence of the surface layer with several tens nm in thickness, of which the crystalline phase and composition were different from those of the inside of the thin films, was found. The newly developed XPS analytical technique is much applicable for the characterization of PZT thin film surface.     

Optical and Electrical Properties of Ferroelectric SBN Thin Films Prepared by Sol-Gel Process

Strontium barium niobate thin films were prepared by sol-gel method on various substrates using an improved process, two-step heating process. The two-step heating process applies an additive heat-treatment before crystallization for enhancement of the densification and the nucleation of films. Also, highly c-axis oriented SBN thin films with various compositions were obtained on MgO(100) and Pt(100)/MgO(100) substrates. Their optical and electrical properties such as optical propagation loss, refractive index, P-E hysteresis, and dielectric constant, were characterized as a function of the film composition.     

New Sol-Gel Route for Processing of PMN Thin Films

Pyrochlore free Pb(Mg_1/3Nb_2/3)O₃ (PMN) thin films were prepared from mixed-metal precursors solutions using the sol-gel process. Lead acetate [Pb(CH₃COO)₂], magnesium acetate [Mg(CH₃COO)₂] and niobium ethoxide [Nb(C₂H₅O)₅] were used as starting materials, while 2-isopropoxy-ethanol was chosen as solvent. The reactivity of the precursors was investigated in order to understand and control the process and thus to prevent the contamination of the PMN with the pyrochlore phase. The solution was spin-coated on TiO₂/Pt/TiO₂/SiO₂/Si substrate. The thin films were characterized by SEM and XRD while dielectric measurements were performed on the bulk ceramic.     

Preparation and Characterization of Amorphous ZrO2-SiO2 Composite Powders Processed by Sol-Gel Chemistry

Composite ZrO₂-SiO₂ powders, with different ZrO₂ contents, including pure ZrO₂ powders, were prepared by precipitation in SiO₂ suspensions, of zirconia gels from solutions of zirconyl chloride at pH = 11. These products were investigated in connection with the phase changes in ZrO₂ caused by heat-treatments. ZrO₂-SiO₂ mixtures containing 0–100% mol ZrO₂, were studied by differential thermal analysis (DTA), X-ray powder diffraction (XRD), temperature programmed desorption combined with mass spectroscopy (TPD-MS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX), to obtain information on the morphological and structural features of the particles before and during the heat treatment up to 1200°C. Specific surface areas were determined using nitrogen adsorption by the BET method. The results offer an explanation about some of the factors which can be influencing on the stabilization of metastable-cubic/tetragonal (C/T) phase of ZrO₂ and the evolution of surface areas (vulcano profile) observed in the composites.     

Sol-Gel Derived Barium-Strontium Titanate Films

Sol-gel techniques for the preparation of barium-strontium titanate (BST) films are discussed. The evolution of film microstructure during heat treatment, and the dielectric properties of BST films prepared from alkoxide solutions and from alkoxide solutions modified by 2-ethylhexanoic acid were studied. It is shown that the extent of the modification of the precursors by 2-ethylhexanoic acid changes the precursor molecular complexity governing the microstructure of the films and their electrical properties.