Limits on light emission from silicon Invited Paper

Although silicon is an indirect semiconductor, light emission from silicon is governed by the same gener-alized Planck's radiation law as the emission from direct semiconductors. The emission intensity is given by the absorptance of the volume in which there is a difference of the quasi Fermi energies. A difference of the Fermi energies may rcsult from the absorption of external light (photoluminescence) or from the in-jection of electrons and holes via selective contacts (electroluminescence). The quantum efficiency may be larger than 0.5 for carrier densities below 1015 cm-3. At larger densities, non-radiative recombination, in particular Auger recombination dominates. At all carrier densities, the relation between emission intensity and difference of the quasi Fermi energies is maintained. Since this difference is equal to the voltage of a properly designed solar cell, luminescence is the key indicator of material quality for solar cells.     

Absorption transition of He-Ne laser in Plasma generated by microwave

Plasma luminescence has been measured in the visible range from 200 to 800 nm. The effect of collisions with sputtered copper ionic species at different argon gas pressures on the emission light intensity has been studied. The behaviour of well resolved lines at 210 and 657 nm as a function of gas pressure and microwave radiation power is measured. The transmission of He-Ne laser line (632.8 nm) through the induced plasma shows dependence on the microwave radiation power. There are observed transitions for the absorption of laser intensity for the filling gas pressures 0 and 5.3 torr at the radiation power of 175 W.     

On temperature dependence of impurity absorption and luminescence bands in dielectric crystals

In terms of the adiabatic approach to determining the states of an impurity dielectric crystal, the temperature dependence of the first moment (maximum) of the optical band that arises upon vibronic transitions in a local center is studied. It is shown that the frequency of the band maximum and absolute temperature are linked with each other by a relation that is analogous to the Wien’s displacement law for equilibrium radiation. This result is consistent with experimental data obtained, in particular for F absorption and luminescence bands in alkali halide crystals.     

Anisotropy of optical absorption and luminescent properties of CaMoO4

Optical absorption, excitation and emission spectra, as well as photoluminescence decay time of CaMoO₄ single crystals have been measured. It has been revealed that annealing of crystals in oxygen atmosphere leads to the disappearance of their anisotropic behavior in optical absorption, as well as in X-ray luminescence and decay time. Moreover, it has been found that annealing can significantly affect the value of the decay time. The relative intensity of the long-wavelength emission band increases under excitation in the region of indirect band-to-band transitions.     

A new mathematical approximation of sunlight attenuation in rocks for surface luminescence dating

The attenuation of sunlight through different rock surfaces and the thermoluminescence (TL) or Optical stimulated luminescence (OSL) residuals clock resetting derived from sunlight induced eviction of electrons from electron traps, is a prerequisite criterion for potential dating. The modeling of change of residual luminescence as a function of two variables, the solar radiation path length (or depth) and exposure time offers further insight into the dating concept. The double exponential function modeling based on the Lambert-Beer law, valid under certain assumptions, constructed by a quasi-manual equation fails to offer a general and statistically sound expression of the best fit for most rock types. A cumulative log-normal distribution fitting provides a most satisfactory mathematical approximation for marbles, marble schists and granites, where absorption coefficient and residual luminescence parameters are defined per each type of rock or marble quarry. The new model is applied on available data and age determination tests.     

Indirect exciton luminescense and Raman scattering in CdI2

Intrinsic luminescence and Raman scattering in 4HCdI₂ have been investigated at 2 K. Weak emission bands observed near the absorption edge are attributed to the phonon-assistes indirect exciton luminescence. Several new Raman lines are observed under resonant excitation in addition to known lines. The symmetry of the phonon modes associated with the indirect transitions as well as with Raman scattering is discussed.     

Electrically induced luminescence in parabolic quantum wells in a magnetic field

Interband luminescence in a parabolic quantum well is studied in applied electric and magnetic fields. It is shown that the luminescence peak is displaced towards higher frequencies with increasing magnetic field strength, while an increase in the electric field strength causes a displacement of the emission peak towards the long-wave region and a decrease in its amplitude. The theoretical results are compared with the experimental data. The existence of a new electromagnetic-wave emission channel (electrically induced luminescence) associated with indirect optical transitions is predicted. The frequency dependence of the electrically induced radiation is computed, taking into account the interaction of an electron with acoustic and optical phonons. It is found that the half-width of the luminescence peak increases with the electric field strength.     

Formation and properties of high density Si nanodots

Laser induced crystallization of ultrathin hydrogenated amorphous Si films or amorphous Si-based multilayered structures were used to get high density Si nanodots. The present technique can get size controllable Si nanodots embedded in various dielectric materials with uniform distribution which was revealed by cross-section transmission electron microscopy. Room temperature photoluminescence and electroluminescence were achieved with the emission wavelength in a visible light region both from a-SiN/Si nanodots/a-SiN sandwiched and Si nanodots/SiO₂ multilayered structures. The luminescence was associated with the radiative recombination of generated electron-hole pairs in Si nanodots or the luminescent surface states. The electroluminescence intensity is increased with increasing the injection current implying the bipolar carrier injection plays an important role in enhancing the luminescence efficiency. The formed Si nanodots by the present approach can be applied for many kinds of devices such as high efficient light emitting diodes and solar cells.     

Luminescence of a quasi-two-dimensional electron-hole liquid and excitonic molecules in Si/SiGe/Si heterostructures upon two-electron transitions

The low-temperature photoluminescence of Si/Si_0.91Ge_0.09/Si heterostructures in the near-infrared and visible spectral ranges is investigated. For the structure in which the barrier in the conduction band formed by the SiGe layer is transparent to electron tunneling, the broad luminescence line observed in the visible range is analyzed by comparing its shape with the numerical convolution of the spectrum of near-infrared recombination radiation originating from the electron-hole liquid. The comparison demonstrates that, at high excitation levels, the visible-range emission is caused by two-electron transitions in a quasi-two-dimensional spatially direct electron-hole liquid. Furthermore, the combined analysis of the photoluminescence spectra in the near-infrared and visible ranges yields the binding energy of a quasi-two-dimensional free biexciton in the SiGe layer of these heterostructures. In the structures with a wide SiGe layer that is not tunneling-transparent to electrons, a spatially indirect (dipolar) electron-hole liquid is observed.     

Visible light emission from Si/SiO2 superlattices in optical microcavities

Bright quantum confined luminescence due to band-to-band recombination can be obtained from Si/SiO₂ superlattices. Placing them in a one-dimensional optical microcavity results in a pronounced modulation of the photoluminescence (PL) intensity with emission wavelength, as a consequence of the standing wave set up between the substrate and top interfaces. For a Si substrate, absorption of light reduces the PL efficiency, but for an Al-coated glass substrate the PL intensity is twice that of a quartz substrate case. The addition of a broad-band high reflector to the superlattice surface results in enhanced narrow-band emission. These results show that a suitably designed planar microcavity can not only considerably increase the external efficiency of luminescence in Si/SiO₂ superlattices but can also be used to decrease the bandwidth and selectively tune the peak wavelength.     

Formation mechanisms and structure of the luminescence spectra of a dense resonant medium

The purely thermal visible and infrared radiation emitted by a dense resonant medium (sodium vapor) heated nonuniformly to temperatures of 600–1200 K was investigated experimentally for the first time under conditions where the photon mean free path is comparable with the emission wavelength. The profile of the recorded spectra and the absolute luminescence intensities in the different spectral ranges show good agreement with the results of a numerical simulation using a previously developed theory of resonance radiation transport which assumes a Boltzmann spectral distribution of the resonant level population proportional to exp(−ℏω/T). The self-reversed resonant sodium line exhibited strong asymmetry and it was shown that under certain conditions, the luminescence spectrum of the medium may exhibit an additional broad peak on the far “red” limb of the resonance line. Calculations and measurements demonstrated that the intensity of the thermal emission of sodium vapor at this red peak is several orders of magnitude higher than that obtained from the standard theory of resonance radiation transport. This effect is arbitrarily termed an infrared “ catastrophe.” It is noted that in a solar corona plasma and in gas-discharge lamps, the far red limbs of the resonant lines may make a substantial contribution to the total luminescence intensity and in some cases, considerably exceed the intensity of the photorecombination and bremsstrahlung continuum. Zh. éksp. Teor. Fiz. 114, 135–154 (July 1998)     

(Li,Cu)掺杂ZnO薄膜的发光性质

利用溶胶-凝胶(Sol-gel)法在n型si(100)衬底上制备(Li,Cu)掺杂ZnO薄膜,研究了室温下薄膜的结构、形貌和光致发光性能.研究结果表明,随着Li掺杂浓度的增加,可见光发光强度增加,可见光发射可能是源于单电离氧窄位到价带顶以及单电离氧空位到Li替位Zn(Lizn)受主跃迁的双重作用.与此类似,Cu掺杂Zn...     

Intraband absorption and emission of light in quantum wells and quantum dots

High-resolution spectroscopy in the mid-infrared spectral range is used to study electronic transitions between size-quantization subbands in stepped quantum wells under picosecond interband excitation. The contributions from intersubband and intrasubband absorption of light are separated by using the difference in time profiles of the absorption coefficient for these cases. For stepped quantum wells, spontaneous interband luminescence and superluminescence are studied for different excitation levels. For structures with quantum dots, the intraband absorption spectra for n-and p-type structures and the spectra of photoinduced intraband absorption and emission (for polarized radiation) for undoped structures are studied.     

大豆愈伤组织超弱光子辐射的双指数模型

在研究生物超弱光子辐射机理的基础上,建立了大豆愈伤组织超弱光子辐射的双指数模型.用20μW/cm2的UV-B辐射处理大豆愈伤组织2 h,测定处理后4 d内的超弱光子辐射.结果显示,双指数模型准确描述了大豆愈伤组织的超弱光子辐射及其在UV-B辐射下的变化,表明大豆愈伤组织的超弱光子辐射由快项和慢项两个部分组成;通过对双指...     

Optical properties of excitons bound to neutral SiGa-donors in GaP and the degeneracy of the SiGa-donor ground state

Low temperature near band-edge absorption and luminescence spectra of Si-doped n-type GaP are reported. Electrical and optical evidence is presented that these spectra are due to the creation and decay of excitons bound to neutral Si donors on Ga sites. Several zero-phonon transitions, each with strong replications by momentum conserving phonons, were observed in both absorption and luminescence. From these measurements it is concluded that the ground state of the Si_Ga donor is split into two sublevels 0.6 meV apart. Crystals containing a sufficiently low concentration of S to be suitable for a reliable analysis of temperature-dependent Hall-effect measurements were selected by combining 300°K Hall-effect data with low temperature S-exciton absorption data. The electrical measurements support the identification of Si as the main shallow donor. Moreover, it is concluded from these measurements that the degeneracy of the ground state of a Ga-site donor is 3 times that of a P-site donor, in agreement with theoretical expectations.     

Stimulated emission from donor transitions in silicon

The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59 &mgr;m due to the neutral donor intracenter 2p(0)-->1s(E) transition in Si:P pumped by CO2 laser radiation is obtained. Populations of D0 and D- center states and the balance of the radiation absorption and amplification are theoretically analyzed.     

Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

We report a lateral Ge-on-Si ridge waveguide light emitting diode(LED) grown by ultrahigh vacuum chemical vapor deposition(UHV-CVD). Direct-bandgap electroluminescence(EL) of Ge waveguide under continuous current is observed at room temperature. The heat-enhancing luminescence and thermal radiation-induced superlinear increase of edge output optical power are found. The spontaneous emission and thermal radiation based on the generalized Planck radiation law are calculated and fit very well to the experimental results. The Ge waveguides with different lengths are studied and the shorter one shows stronger EL intensity.     

UV-B诱导的大豆愈伤组织超弱光子辐射的动力学分析

为了研究细胞超弱光子辐射的动力学特征及其所揭示的生物学意义,用20 μW/cm2UV-B辐射大豆愈伤组织2 h,测定停止辐射后4 d内大豆愈伤组织在LED光诱导下的延迟发光.通过建立延迟发光动力学方程和数学拟合得到了大豆愈伤组织超弱光子辐射中的延迟发光积分强度、初始光子数、衰减参数和自发发光,讨论了这些发光动力学参数的生物学意义.研究结果表明,在停止UV-B辐射后的4 d内,大豆愈伤组织的光诱导延迟发光服从双曲线弛豫.动力学分析发现,延迟发光积分强度和初始光子数随处理后时间的进行呈现波动变化,停止UV-B辐射后,自发发光和丙二醛（MDA）含量均呈现升高的趋势,在辐射后2 d附近达到峰值,此后同步下降.用延迟发光积分强度和自发发光的比值定义细胞的状态参量Q和序参量R,发现UV-B辐射后大豆愈伤组织细胞Q值或R值的变化反映了UV-B辐射对大豆愈伤组织细胞的损伤以及细胞的恢复过程.     

Nonlinear light absorption and luminescence in silicate glasses

The study of luminescence of high-purity multicomponent silicate glasses excited by radiation of a N₂ laser (λ=337 nm, P≈12kW) showed darkening of a sample and a monotone decrease in luminescence intensity and the transmitted radiation intensity from pulse to pulse. Additional illumination with radiation of an Ar⁺ laser (λ=514.5 nm) caused an increase in luminescence intensity. An increase in absorption and a decrease in luminescence intensity were found to be caused by two-photon absorption and electron-hole pair production.