Determination of optical nonlinearities in Cu(mpo)2 by Z-scan technique

The optical nonlinearities of Cu(mpo)₂ [formula = C₁₀H₈N₂CuO₂S₂] complex have firstly been investigated by using the Z-scan technique with a nanosecond-pulsed Nd:YAG laser at its second harmonic (532 nm) radiation. The nonlinear optical absorption and refraction coefficients of Cu(mpo)₂ have been measured with the different on-axial peak irradiances I ₀ at the waist ranging from 0.48 to 5.66 GW/cm². The nonlinear transmittance characteristics exhibit the near resonant two-photon absorption (TPA) at 532 nm and are explained by a population redistribution model. The nonlinear absorption originates from the near resonant TPA while the mechanism of the nonlinear refraction is the near resonant TPA transition enhancement. The linear increasing dependences of the optical nonlinearities on the incident irradiance arise from the population redistribution due to the near resonant TPA.     

Study on nonlinear optical absorption properties of [(CH3)4N]2[Cu(dmit)2] by Z-scan technique

The third-order optical nonlinearities of an organo-metallic compound, [(CH₃)₄N]₂[Cu(dmit)₂] (dmit²⁻=4,5-dithiolate-1,3-dithiole-2-thione), abbreviated as MeCu, dissolved in acetone are characterized by Z-scan technique with picosecond and nanosecond laser pulses in the near-infrared region. Two-photon absorption has been found when the sample solution is irradiated by 40 ps pulse width at 1064 nm and the two-photon absorption (TPA) coefficient β_TPA is 4×10⁻¹³ m/W. While excited by 15 ns laser pulses at 1053 nm, the Z-scan spectra reveal strong reverse saturable absorption (RSA) and the nonlinear absorption coefficient β_RSA is estimated to be as high as 7.07×10⁻¹¹ m/W which is much larger than β_TPA. An explanation for this enhancement is given. All the results suggest that MeCu may be a promising candidate for the application to optical limiting in the near-infrared region.     

Investigation of the nonlinear absorption and optical limiting properties of two [Q]2[Cu(C3S5)2] compounds

The nonlinear absorption properties of two organometallic compounds, [(C₂H₅)₄N]₂[Cu(C₃S₅)₂] (DCu1) and [(C₄H₉)₄N]₂[Cu(C₃S₅)₂] (DCu2), have been investigated using an open-aperture Z-scan technique at 1064 nm with 40 ps pulse width and at 1053 nm with 18 ns pulse width. The reverse saturable absorption (RSA) which was observed in both samples with nanosecond pulse excitation was much larger than that observed with picosecond pulse excitation. The nonlinear absorption properties were analyzed theoretically by a five-level model. Optical limiting based on RSA was performed and limiting thresholds were evaluated for both samples under three conditions. DCu1 exhibited the better limiting characteristics because of its stronger RSA response.     

Single beam Z-scan measurement of the third order optical nonlinearities of styryl7 dye

The optical nonlinearity of styryl7 dye in ethanol solution at different concentrations has been studied using pulsed Nd:YAG laser at 532 nm as the source of excitation. The optical responses were characterized by measuring the intensity dependent refractive index (n₂) of the medium using the Z-scan technique. The open aperture Z-scan trace of the dye in solution displayed saturable absorption. The closed aperture Z-scan trace of the dye exhibited a negative nonlinearity. The styryl7 dye at 1 mM concentration exhibited nonlinear refractive co-efficient n₂ = −1.24 × 10⁻⁸ cm²/W, nonlinear absorption coefficient β = − 3.9 × 10⁻⁴ cm/W and real and imaginary parts of third-order nonlinear optical susceptibility χ³ = 3.26 × 10⁻⁶ esu in ethanol. These results showed that the dye has potential application in nonlinear optics.     

Study of the electron paramagnetic resonance spectra of Zn(antipyrine)2(NO3)2:VO

In this work, a full ligand-field energy matrix (10×10) diagonalization treatment for 3d¹ ions in tetragonal symmetry is developed on the basis of the two-s.o.-coupling-parameter model. Spin Hamiltonian parameters (g factors g_∥, g_⊥ and hyperfine structure constants A_∥, A_⊥) of the tetragonal V⁴⁺ center in Zn(antipyrine)₂(NO₃)₂ are calculated from the complete energy matrix diagonalization method and the perturbation theory method. The calculated results from both methods are not only close to each other but also in good agreement with the experimental values. Furthermore, the compressed defect structure of V⁴⁺ center is discussed.     

三甲基镓在Pd(111)表面吸附解离及表面预吸附H和O的影响

利用X-射线光电子能谱（XPS）和程序升温脱附谱（TPD）研究了三甲基镓在Pd（111）表面的吸附和解离行为,并考察了表面预吸附H和O的影响。结果表明,在吸附温度为140 K时,三甲基镓在Pd（111）上主要为解离吸附,此时表面物种为Ga（CH₃）_x （x=1,2,3）和CH_x物种。加热将导致Ga的甲基化合物中的Ga-C键发生分步断裂,在不同温度下产生CH₄和H₂从表面脱附。同时,XPS结果证实了在275~325 K的温度区间内存在Ga甲基化合物的分子脱附。退火至更高温度,表面只观察到积碳和金属Ga物种,这二者随着温度的继续升高逐渐向体相扩散。在Pd（111）表面预吸附O和H对上述吸附和解离行为存在显著的影响。当表面预吸附H时,脱附产物CH₄和H₂的脱附主要位于315 K,可归属为一甲基镓的解离脱附。当表面预吸附O时,只在258 K观察到CH₄和H₂的脱附峰,可能来自于Pd-O-Ga（CH₃）₂吸附结构的解离.     

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Thermal stability, interfacial structures and electrical properties of amorphous (La₂O₃)_0.5(SiO₂)_0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH₃ nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH₃ can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation.     

Blue luminescence in Tm-doped KGd(WO4)2 single crystals

Up-conversion blue emissions of trivalent thulium ions in monoclinic KGd(WO₄)₂ single crystals at 454 and 479 nm are reported for a single pump laser source at 688 nm. We grew thulium-doped KGd(WO₄)₂ single crystals at several concentrations from 0.1% to 10%. We recorded a polarized optical absorption spectrum for the ³F₂+³F₃ energy levels of thulium at room temperature and low temperature (6 K). From the low temperature emission spectra we determined the splitting of the ³H₆ ground state. The blue emissions are characterized as a function of the dopant concentration and temperature from 10 K to room temperature. To our knowledge, this is the first time that sequential two-photon excitation process (STEP) generated blue emissions in thulium-doped single crystals with a single excitation wavelength.     

热压制备(AgSbTe2)100-x-(GeTe)x合金的热电性能

以Pb粉、Te粉、Ag粉、Ge粉为原材料,在真空气氛下合成(AgSbTe₂)_100-x-(GeTe)_x (x=80---90) (TAGS)合金热电材料, X射线衍射(XRD)分析表明,热压烧结后合金具有低温菱形结构. 通过热压烧结法将TAGS粉末制备成块体材料,运用XRD和扫描电子显微镜对材料的物相成分、 晶体结构和形貌进行了表征.采用直流四探针法测定样品的电导率,当样品两端的温差为1---4℃ 的情况下测量Seebeck系数.通过材料热电性能测试,研究了30---500℃温度范围内不同组分 样品性能参数的变化.结果表明,所制备的TAGS热电材料具有纳米结构, 其性能随着组分的变化而变化, TAGS-80具有较好的热电性能,在530℃时具有最高热电优值(ZT=1.80).     

Oxygen vacancy in LiTiPO5 and LiTi2(PO4)3: A first-principles study

The structures of LiTiPO₅ and LiTi₂(PO₄)₃, as well as the possibility of oxygen vacancies formation in the systems are studied by first-principles calculations. It is found that oxygen vacancies can be formed in LiTiPO₅ and LiTi₂(PO₄)₃ under oxygen poor condition. The formation of oxygen vacancies introduce a defect band within their band gaps, which is expected to improve the electronic conductivity of LiTiPO₅ and LiTi₂(PO₄)₃ significantly. Meanwhile, a great concentration of oxygen vacancies may increase the discharge voltage of LiTiPO₅ and LiTi₂(PO₄)₃.     

Preparation and characterization of novel Pd/SiO2 and Ca-Pd/SiO2 egg-shell catalysts with porous hollow silica

Novel egg-shell structured monometallic Pd/SiO₂ and bimetallic Ca-Pd/SiO₂ catalysts were prepared by an impregnation method using porous hollow silica (PHS) as the support and PdCl₂ and Ca(NO₃)₂·4H₂O as the precursors. It was found from transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) that Pd was loaded on PHS with a particle size of 5-12 nm in Pd/SiO₂ samples and the Pd particle size in Ca-Pd/SiO₂ was smaller than that in Pd/SiO₂ since Ca could prevent Pd particles from aggregating. X-ray photoelectron spectroscopy (XPS) analyses exhibited that Pd 3d_5/2 binding energies of Pd/SiO₂ and Ca-Pd/SiO₂ were 0.2 and 0.9 eV lower than that of bulk Pd, respectively, as a result of the shift of the electron cloud from Pd to oxygen in Pd/SiO₂ and to both oxygen and Ca in Ca-Pd/SiO₂. The activity of Ca-Pd/SiO₂ egg-shell catalyst for CO hydrogenation and the selectivity to methanol, with a value of 36.50 mmol_CO mol⁻¹_Pd s⁻¹ and 100%, respectively, were much higher than those of the catalysts prepared with traditional silica gel as the support, owing to the porous core-shell structure of the PHS support.     

Eu-activated Ba2Mg(BO3)2 yellow-emitting phosphors for near ultraviolet-based light-emitting diodes

A series of Eu²⁺-activated Ba₂Mg(BO₃)₂ yellow phosphors were prepared by a high temperature solid-state reaction. The phosphor emits intense yellow light under near ultraviolet excitation. Large Stokes shift can be attributed to the asymmetric nature of the Eu site and the lack of rigidity in the host. The concentration self-quenching mechanism of Ba₂Mg(BO₃)₂:Eu²⁺ is d-d interaction and the critical transfer distance is calculated to be about 12.29 Å. Prototype light-emitting diodes were fabricated by coating the Ba₂Mg(BO₃)₂:0.07Eu²⁺ phosphor onto ∼370 nm-emitting InGaN chips. The LEDs exhibit intense yellow-emitting under a forward bias of 20 mA. The results indicate that Eu²⁺-activated Ba₂Mg(BO₃)₂ is a candidate as a yellow component for fabrication of near-UV white light-emitting diodes.     

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

Silver antimony selenide (AgSbSe₂) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb₂S₃), silver selenide (Ag₂Se), selenium (Se) and silver (Ag). Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃, Ag₂Se from a solution containing AgNO₃ and Na₂SeSO₃ and Se thin films from an acidified solution of Na₂SeSO₃, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 °C in vacuum (10⁻³ Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe₂ or AgSb(S,Se)₂ depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe₂/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V_oc = 435 mV and J_sc = 0.08 mA/cm² under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe₂ as an absorber material by a non-toxic selenization process is achieved.     

Luminescence of Ce and Pr doped Sr2Mg(BO3)2 under VUV-UV and X-ray excitation

This report presents the luminescence properties of Ce³⁺ and Pr³⁺ activated Sr₂Mg(BO₃)₂ under VUV-UV and X-ray excitation. The five excitation bands of crystal field split 5d states are observed at about 46 729, 44 643, 41 667, 38 314 and 29 762 cm⁻¹ (i.e. 214, 224, 240, 261 and 336 nm) for Ce³⁺ in the host lattice. The doublet Ce³⁺ 5d→4f emission bands were found at about 25 840 and 24 096 cm⁻¹ (387 and 415 nm). The influence of doping concentration and temperature on the emission characteristics and the decay time of Ce³⁺ in Sr₂Mg(BO₃)₂ were investigated. For Pr³⁺ doped samples, the lowest 5d excitation band was observed at about 42017 cm⁻¹ (238 nm), a dominant band at around 35714 cm⁻¹ (280 nm) and two shoulder bands were seen in the emission spectra. The excitation and emission spectra of Ce³⁺ and Pr³⁺ were compared and discussed. The X-ray excited luminescence studies show that the light yields are ∼3200±230 and ∼1400±100 photons/MeV of absorbed X-ray energy for the samples Sr_1.86Ce_0.07Na_0.07Mg(BO₃)₂ and Sr_1.82Pr_0.09Na_0.09Mg(BO₃)₂ at RT, respectively.     

Nonlinear optical characterization of phosphate glasses based on ZnO using the Z-scan technique

The nonlinear optical properties of a phosphate vitreous system [(ZnO)_x-(MgO)_30-x-(P₂ O₅)₇₀], where x=8, 10, 15, 18, and 20 mol% synthesized through the melt-quenching technique have been investigated by using the Z-scan technique. In the experiment, a continuous-wave laser with a wavelength of 405 nm was utilized to determine the sign and value of the nonlinear refractive (NLR) index and the absorption coefficient with closed and opened apertures of the Z-scan setup. The NLR index was found to increase with the ZnO concentration in the glass samples by an order of 10^-10 cm²·W^-1. The real and imaginary parts of the third-order nonlinear susceptibility were calculated by referring to the NLR index (n₂) and absorption coefficient (β) of the samples. The value of the third-order nonlinear susceptibility was presented by nonlinear refractive or absorptive behavior of phosphate glasses for proper utilization in nonlinear optical devices. Based on the measurement, the positive sign of the NLR index shows a self-focusing phenomenon. The figures of merit for each sample were calculated to judge the potential of phosphate glasses for application in optical switching.     

Double-ceramic-layer thermal barrier coatings based on La2(Zr0.7Ce0.3)2O7/La2Ce2O7 deposited by electron beam-physical vapor deposition

Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La₂(Zr_0.7Ce_0.3)₂O₇ (LZ7C3) and La₂Ce₂O₇ (LC) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, interdiffusion, surface and cross-sectional morphologies, cyclic oxidation behavior of DCL coating were studied. Energy dispersive spectroscopy and X-ray diffraction analyses indicate that both LZ7C3 and LC coatings are effectively fabricated by a single LZ7C3 ingot with properly controlling the deposition energy. The chemical compatibility of LC coating and thermally grown oxide (TGO) layer is unstable. LaAlO₃ is formed due to the chemical reaction between LC and Al₂O₃ which is the main composition of TGO layer. Additionally, the thermal cycling behavior of DCL coating is influenced by the interdiffusion of Zr and Ce between LZ7C3 and LC coatings. The failure of DCL coating is a result of the sintering of LZ7C3 coating surface, the chemical incompatibility of LC coating and TGO layer and the abnormal oxidation of bond coat. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL coating is an important development direction of TBCs.     

XPS and XRD investigation of Co/Pd/TiO2 catalysts by different preparation methods

In the article, the Co/Pd/TiO₂, Co/TiO₂ and Pd/TiO₂ catalysts prepared by the impregnation and sol–gel method are studied by using X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The result shows that Co²⁺ and metal Pd may act as the active center for the direct synthesis of acetic acid from CH₄ and CO₂ by a two-step reaction sequence. When the catalysts are prepared by the sol–gel, Co²⁺ can enter the crystal lattice of the TiO₂, causing the phase transition from anatase to rutile at lower temperature, but existence of Pd²⁺ can prevent from the phase transition. When the catalysts are prepared by the impregnation, the phase transition is inhibited not only Co²⁺ but also Pd²⁺.     

Synthesis and ion conductivity of (Bi2O3)0.75(Dy2O3)0.25 ceramics with grain sizes from the nano to the micro scale

Using (Bi₂O₃)_0.75(Dy₂O₃)_0.25 nano-powder synthesized by reverse titration co-precipitation method as raw material, dense ceramics were sintered by both Spark Plasma Sintering (SPS) and pressureless sintering. According to the predominance area diagram of Bi-O binary system, the sintering conditions under SPS were optimized. (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with relative density higher than 95% and an average grain size of 20 nm were sintered in only 10 min up to 500 °C. During the pressureless sintering process, the grain growth behavior of (Bi₂O₃)_0.75(Dy₂O₃)_0.25 followed a parabolic trend, expressed as D² − D₀² = Kt, and the apparent activation energy of grain growth was found to be 284 kJ mol^− 1. Dense (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with different grain sizes were obtained, and the effect of grain size on ion conductivity was investigated by impedance spectroscopy. It was shown that the total ion conductivity was not affected by the grain size down to 100 nm, however lower conductivity was measured for the sample with the smallest grain size (20 nm). But, although only the δ phase was evidenced by X-ray diffraction for this sample, a closer inspection by Raman spectroscopy revealed traces of α-Bi₂O₃.     

花状NaY(MoO4)2的合成和(MoO4)2:Eu3+的光学性质

用微波辅助水热-煅烧法成功合成了花状NaY(MoO₄)₂颗粒,用XRD、XPS、FESEM进行了表征,提出了花状NaY(MoO₄)₂颗粒可能的形成机理. 采用相同的方法合成了NaY(MoO₄)₂:Eu³⁺荧光体,该荧光材料在612 nm处有一个强的发射峰,可用作白色发光二极管的红色磷光剂. 此外,微波辅助水热-煅烧法可能发展成为制备其他花状稀土钼酸盐的有效途径.     

Tm3+离子掺杂的钨酸钇钠晶体中浓度猝灭效应的研究

测量了Tm³⁺离子不同浓度(0.5at.%, 3 at.%, 5 at.%)掺杂的NaY(WO₄)₂晶体在800nm激光二极管激发下的上转换发射光谱.结合吸收谱、荧光谱和由Judd-Ofelt理论计算的光谱参数，详细分析了Tm³⁺:NaY(WO₄)₂晶体中上转换能量传递机理和离子浓度对上转换发射的影响.讨论了四种影响上转换发光效率的离子间相互作用机理：³H₅+¹G₄→³H₆+¹D₂，³H₅+³H₅→³H₆+³F₃，¹G₄+³H₆→³F₄+³F₃，¹G₄+³H₆→³F₃+³F₄，并根据Miyakawa-Dexter理论定量计算了各过程的发生概率.论证了交叉弛豫和共协上转换等浓度猝灭效应是影响Tm³⁺离子蓝色上转换荧光发射效率的主要因素. 关键词： 3+离子')" href="#">Tm³⁺离子 4)₂晶体')" href="#">NaY(WO₄)₂晶体 上转换 浓度猝灭