多功能椭偏测厚仪

研究成功一台变入射角反射式消光法多功能智能椭偏测厚仪。实验表明 :仪器的测厚准确度为± 0 1nm ;椭偏参数Ψ和Δ的测量重复性精度分别为± 0 1°和± 0 3° ,适用于纳米级薄膜厚度和折射率的测量     

薄膜光学常数的椭偏测量

利用光谱型椭偏仪测量了镀在熔石英玻璃基片上的氟化镁薄膜在300～850nm波长范围内的椭偏参数.并利用Levenberg-Marquardt算法.反演出了氟化镁薄膜在该波长范围内的色散曲线.通过与纯氟化镁体材料的色散曲线比较,发现所镀的氟化镁薄膜的折射率略小于体材料的折射率.     

与消光式兼容的光度椭偏仪的原理

在PQSA式消光型椭偏仪基础上,把原来方位固定的1/4波片改为旋转波片就可以构成与消光式兼容的新型光度椭偏仪。本文讨论了这种光度椭偏仪的工作原理和计算公式。理论分析指出,这是一种完全的椭偏仪,能唯一地确定的符号,并在测量线偏光的时精度不会下降。文中还报告了进行原理性实验的结果。     

薄膜椭偏测量的自适应混合反演算法

基于梯度的线性反演方法计算效率高,基于随机扰动的模拟退火方法寻找最优解能力强针对薄膜椭偏测量的多极值问题,综合两者的优点,提出一种求解薄膜椭偏测量问题的混合反演算法.模型每次扰动采用线性寻优方法搜寻局部最优解,叠代过程中采用均匀设计的模拟退火方法随机搜寻模型,使该算法有跳出局部最优解的能力,可以在较少的叠代次数内搜寻到全局最优解,从而提高求解薄膜椭偏测量非线性反演方法的计算效率.对反演过程控制参数进行讨论,该算法具有自适应的特点.计算表明,该算法可有效求解薄膜椭偏测量的多极值问题.     

光谱型椭偏仪对各向异性液晶层的测量

探讨了利用普通光谱型椭偏仪对各向异性液晶层进行综合性测量的可行性. 并利用法国Jobin Yvon公司的UVISEL SPME(Spectroscopic Phase Modulated Ellipsometer)光谱型椭偏仪测量了光学各向异性液晶层的折射率n_o和n_e及液晶层厚d，进一步利用椭偏仪在透射方式下测量了平行排列液晶层的光延迟特性Δnd，二者取得了很好的一致性，说明利用光谱型椭偏仪可以实现对光学单轴性液晶层及其他材料的测量，测厚精度为纳米量级. 关键词： 光谱型椭偏仪 各向异性 折射率 相位延迟     

椭偏测厚仪测量结果的计算机数据处理

本详尽介绍了椭偏术测量单层透明薄膜折射率和厚度的方法，采用一种数字迭代计算方法，由测量得到的起偏角A和检偏角P直接算出所测薄膜的折射率和厚度。经过数值试验及与标准值比对，由此编制的计算程序具有准确，快速，方便的特点。     

纳米精度外差椭偏仪的研制

本文介绍了各种椭偏仪的原理及性能,重点对外差式椭偏仪进行介绍,并对提出的几种外差透射椭偏仪的原理进行了实验验证。     

一种新型椭偏测量实验 --塞曼激光外差椭偏仪

分析了大学物理实验中传统的消光式椭偏仪实验存在的问题，提出以一种新型外差式椭偏测量系统取代．结合塞曼激光外差干涉和反射式椭偏测量原理，给出了光学结构设计．系统中没有任何运动部件，也无需手动操作，实验过程自动化程度高，测量速度快．     

椭偏光谱测量中椭偏参数的灵敏度分析

在对椭圆偏振测量的基本原理进行了简单介绍和推导后,讨论了椭圆偏振测量中椭偏参数关于薄膜参数的灵敏度以及入射角对椭偏参数的影响,并进行了具体的仿真分析,得到如下结论：椭偏参数Delta对薄膜光学常数和薄膜厚度变化的灵敏度明显高于椭偏参数Psi。在椭偏数据处理中,椭偏参数Delta的测量精度直接影响薄膜光学常数和薄膜厚度的拟合精度。为了提高椭偏参数Delta的测量精度,可以选择入射角在膺布儒斯特角附近。所得结论对高精度椭偏测量具有指导意义。     

合金钢材料光学常数的椭偏测量及其修正

用椭偏法测量了入射光波长0.632μm、入射角50°至85°时某合金钢的光学常数。考虑材料表面的粗糙度,用Ohlidal-Lukes理论对所测光学常数值进行修正,发现椭偏参量的修正量随入射角增大而增大。结果表明,用椭偏法测量合金钢光学常数时采用较小入射角能获得更精确的样片光学常数。     

Infrared ellipsometry of nanometric anisotropic dielectric layers on absorbing materials

An inversion problem of infrared ellipsometry is resolved on the basis of a fresh mathematical approach, which does not use the traditional regression analysis for data handling and has no need of initial guesses for the desired parameters. It is shown that obtained simple analytical equations for ellipsometric quantities open up new possibilities for determining optical parameters of an anisotropic ultrathin layer. The novel method possesses very high sensitivity because it is based on the phase conversion measurements of polarized reflected light. The method is tested using a numerical simulation and the results demonstrate clearly that it is successfully applicable for nanometric layers in the infrared spectral region.     

The role of surface roughness in total internal reflection ellipsometry of hybrid systems

Total internal reflection ellipsometry (TIRE) technique was used to investigate the role of surface roughness in the hybrid system composed of octadecanethiole layer on Au thin film. The samples with Au films of different microstructure were explored. The experimental results were interpreted in the model, which took into account the surface roughness of Au film in the hybrid system. It was shown that optical parameters of octadecanethiole were in correspondence for samples of different microstructure in the case of adequate models used for interpretation of TIRE data.     

椭偏法测量表面微粗糙合金钢材料的光学常数研究

采用椭偏法测量入射光波长为0.632μm,入射角为50°～85°时合金钢的光学常数。考虑材料表面的粗糙度,用Ohlidal-Lukes理论对所测光学常数值进行了修正,发现椭偏参量的修正量随入射角增大而增大。结果表明,测量入射角在50°～70°范围内测量值与修正后计算结果基本一致,在70°～85°范围内测量值与修正后的计算结果差距较大。因此,用椭偏法测量合金钢光学常数时使入射角小于70°,测量结果会更加准确。     

Optical arrangement and proof of concept prototype for mid infrared variable angle spectroscopic ellipsometry

We present an optical setup for variable angle mid infra red spectroscopic ellipsometry. The arrangement can be placed into the sample compartment of a Bruker ifs66v/s vacuum Fourier transform infrared spectrometer. A first prototype of the setup has been tested in the spectral range from 650 cm⁻¹ to 4000 cm⁻¹ and can measure incidence angles between 8° and 87°. We compare the measured data to reference measurements with a commercial variable angle infrared spectroscopic ellipsometer. The comparison gives a proof of concept for the discussed optical arrangement.     

Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.     

一种可溯源的光谱椭偏仪标定方法

提出了一种用X射线反射术标定光谱椭偏仪的方法.作为一种间接测量方法,光谱椭偏术测得的薄膜厚度依赖于其光学常数,不具有可溯源性.在掠入射条件下,X射线反射术能测得薄膜的物理厚度,测量结果具有亚纳米量级的精密度且与薄膜光学常数无关.在单晶硅基底上制备了厚度分别为2nm,18nm,34nm,61nm及170nm的SiO2薄膜标样,并用强制过零点的直线拟合了两种方法的标样测量结果,拟合直线的斜率为1.013±0.013,表明该方法可在薄膜厚度测量中标定光谱椭偏仪.     

Rotating polarizer,compensator, and analyzer ellipsometry

In this paper we propose theoretically a set of ellipsometric configurations using a rotating polarizer, compensator, and analyzer at a speed ratio of N1ω：N2ω：N3ω. Different ellipsometric configurations can be obtained by giving different integral values to N1, N2, and N3. All configurations are applied to bulk c-Si and GaAs to calculate the real and imaginary parts of the refractive index of the samples. The accuracies of all ellipsometric configurations are investigated in the presence of a hypothetical noise and with small misalignments of the optical elements. Moreover, the uncertainties in the ellipsometric parameters as functions of the uncertainties of the Fourier coefficients are studied. The comparison among different configurations reveals that the rotating compensator–analyzer configuration corresponds to the minimum error in the calculated optical parameters.     

微波椭偏法测量不透明材料的厚度

在传统的激光椭偏法测量厚度的基础上,用微波取代激光测量了不透明材料的厚度.分析了偏转角及反射干扰产生的误差,并提出了修正方法.测量结果表明:该方法可以比较精确地测量铝板和塑料板的厚度;由于散射的影响,表面磨砂的有机玻璃板的厚度测量误差很大.     

Low-temperature far-infrared ellipsometry of convergent beam

Development of an ellipsometry to the case of a coherent far infrared irradiation, low temperatures and small samples is described, including a decision of the direct and inverse problems of the convergent beam ellipsometry for an arbitrary wavelength, measurement technique and a compensating orientation of cryostat windows. Experimental results are presented: for a gold film and UBe₁₃ single crystal at room temperature (=119m), temperature dependencies of the complex dielectric function of SrTiO₃ (=119, 84 and 28m) and of YBa₂Cu₃O_7– ceramic (A=119m).