The influence of carrier level and frequency on modulation and beat-detection thresholds for sinusoidal carriers

This paper is concerned with modulation and beat detection for sinusoidal carriers. In the first experiment, temporal modulation transfer functions (TMTFs) were measured for carrier frequencies between 1 and 10 kHz. Modulation rates covered the range from 10 Hz to about the rate equaling the critical bandwidth at the carrier frequency. In experiment 2, TMTFs for three carrier frequencies were obtained as a function of the carrier level. In the final experiment, thresholds for the detection of either the lower or the upper modulation sideband (beat detection) were measured for "carrier" frequencies of 5 and 10 kHz, using the same range of modulation rates as in experiment 1. The TMTFs for carrier frequencies of 2 kHz and higher remained flat up to a modulation rate of about 100-130 Hz and had similar values across carrier frequencies. For higher rates, modulation thresholds initially increased and then decreased rapidly, reflecting the subjects' ability to resolve the sidebands spectrally. Detection thresholds generally improved with increasing carrier level, but large variations in the exact level dependence were observed, across subjects as well as across carrier frequencies. For beat rates up to about 70 Hz (at 5 kHz) and 100 Hz (at 10 kHz), beat detection thresholds were the same for the upper and the lower sidebands and were about 6 dB higher than the level per sideband at the modulation-detection threshold. At higher rates the threshold for both sidebands increased, but the increase was larger for the lower sideband. This reflects an asymmetry in masking with more masking towards lower frequencies. Only at rates well beyond the maximum of the TMTF did detection for the lower sideband start to be better than that for the upper sideband. The asymmetry at intermediate frequency separations can be explained by assuming that detection always takes place in filters centered above the stimulus spectrum. The shape of the TMTF and the beat-detection data reflects a limitation in resolving fast amplitude variations, which must occur central to the inner-ear filtering. Its characteristic resembles that of a first-order low-pass filter with a cutoff frequency of about 150 Hz.     

The effect of temporal asymmetry on amplitude modulation detection using pure-tone carriers (L)

The effect of temporal asymmetry on amplitude modulation detection was studied using sawtooth modulators with rising (ramped) or falling (damped) temporal envelopes within each period of modulation. For pure-tone carriers, damped modulation was more detectable than ramped modulation for a 5-kHz carrier (by a threshold difference of 3.2 dB on average) but not for a 1-kHz carrier. The threshold difference obtained at 5 kHz between the ramped and damped modulators was consistent across modulation rates (8-128 Hz). This carrier frequency dependence suggests that the effect of temporally asymmetry on modulation detection originates from envelope-based, within-channel mechanisms.     

Discrimination of depth of sinusoidal amplitude modulation with and without roved carrier levels

Thresholds for the discrimination of the depth of sinusoidal amplitude modulation with a broadband noise carrier were measured for three listeners in a two-alternative, forced-choice task for modulation frequencies of 8, 32, and 128 Hz. Thresholds were measured with the spectrum level of the carrier fixed at 20 dB across all trials and, separately, with the carrier spectrum level roved randomly over a 20-dB range (10-30 dB) in each interval. Mean thresholds were equal or slightly lower (but not significantly so) for the fixed conditions relative to the roved conditions, and the differences between thresholds were too small to be explained by assuming that listeners compared instantaneous intensity at corresponding phases of the modulation cycle (for example, in the troughs). Rather, it appears that listeners discriminated modulation depth by extracting an estimate of the modulation depth within each interval that was independent of the overall level. Consequently, models of envelope extraction must include normalization of the envelope fluctuations to the envelope dc.     

Effect of modulator asynchrony of sinusoidal and noise modulators on frequency and amplitude modulation detection interference

The effect on modulation detection interference (MDI) of timing of gating of the modulation of target and interferer, with synchronously gated carriers, was investigated in three experiments. In a two-interval, two-alternative forced choice adaptive procedure, listeners had to detect 15 Hz sinusoidal amplitude modulation (AM) or frequency modulation (FM) imposed for 200 ms in the temporal center of a 600 ms target sinusoidal carrier. In the first experiment, 15 Hz sinusoidal FM was imposed in phase on both target and interferer carriers. Thresholds were lower for nonoverlapping than for synchronous modulation of target and interferer, but MDI still occurred for the former. Thresholds were significantly higher when the modulators were gated synchronously than when the interferer modulator was gated on before and off after that of the target. This contrasts with the findings of Oxenham and Dau [J. Acoust. Soc. Am. 110, 402-408 (2001)], who reported no effect of modulation asynchrony on AM detection thresholds, using a narrowband noise modulator. Using FM, experiment 2 showed that for temporally overlapping modulation of target and interferer, modulator asynchrony had no significant effect when the interferer was modulated by a narrowband noise. Experiment 3 showed that, for AM, synchronous gating of modulation of the target and interferer produced lower thresholds than asynchronous gating, especially for sinusoidal modulation of the interferer. Results are discussed in terms of specific cues available for periodic modulation, and differences between perceptual grouping on the basis of common AM and FM.     

Discrimination of modulation depth of sinusoidal amplitude modulation (SAM) noise

The detection of sinusoidal amplitude modulation (SAM) provides a lower bound on the degree to which temporal information in the envelope of complex waveforms is encoded by the auditory system. The extent to which changes in the amount of modulation are discriminable provides additional information on the ability of the auditory system to utilize envelope fluctuations. Results from an experiment on the discrimination of modulation depth of broadband noise are presented. Discrimination thresholds, expressed as differences in modulation power, increase monotonically with the modulation depth of the standard, but do not obey Weber's law. The effects of carrier level and of modulation frequency are consistent with those observed in modulation detection: Changes in carrier level have little effect on modulation discrimination; changes in modulation frequency also have little effect except for standards near the modulation detection threshold. The discrimination of modulation depth is consistent with the leaky-integrator model of modulation detection for standards below--10 dB (20 log ms); for standards greater than--10 dB, the leaky integrator predicts better performance than that observed behaviorally.     

uhf Photoconductivity measurement at high excitation levels

A contactless method is described for measuring photoelectric properties of semiconductors at uhf, employing losses introduced in a resonator by photoconductivity. The possibility of experimental measurement of the filling coefficient of the working range of a uhf generator is demonstrated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 11–14, June, 1979.     

Potentials evoked by the sinusoidal modulation of the amplitude or frequency of a tone

Steady state responses to the sinusoidal modulation of the amplitude or frequency of a tone were recorded from the human scalp. For both amplitude modulation (AM) and frequency modulation (FM), the responses were most consistent at modulation frequencies between 30 and 50 Hz. However, reliable responses could also be recorded at lower frequencies, particularly at 2-5 Hz for AM and at 3-7 Hz for FM. With increasing modulation depth at 40 Hz, both the AM and FM response increased in amplitude, but the AM response tended to saturate at large modulation depths. Neither response showed any significant change in phase with changes in modulation depth. Both responses increased in amplitude and decreased in phase delay with increasing intensity of the carrier tone, the FM response showing some saturation of amplitude at high intensities. Both responses could be recorded at modulation depths close to the subjective threshold for detecting the modulation and at intensities close to the subjective threshold for hearing the stimulus. The responses were variable but did not consistently adapt over periods of 10 min. The 40-Hz AM and FM responses appear to originate in the same generator, this generator being activated by separate auditory systems that detect changes in either amplitude or frequency.     

Disappearance of exciton reflection in ZnO at high excitation levels

Reflection spectra of ZnO at 77K have been recorded in the exciton region by means of a dye laser with intensities between 5kW/cm² and 5MW/cm². The exciton structure in the spectra gradually vanishes at higher laser intensities. While the exciton damping only increases about 25% the oscillator strength and/or the background dielectric constant may change up to a factor of 2. These results are interpreted in terms of formation of an electron-hole plasma or liquid.     

The temperature dependence of the edge emission of GaSe single crystals at high excitation levels

The temperature dependence of five edge emission lines of GaSe at high excitation levels has been investigated by using the second harmonic of a neodymium-glass laser. The following lines were indentified at 77.3K:hv_B = 2.102 ± 0.002 eV, annihilation of free excitons; hv_C = 2.082 ± 0.003 eV, Auger recombination of free excitons; hv_D = 2.072 ± 0.003 eV and hv_E = 2.055 ± 0.004 eV, annihilation of free excitons with emission of optical phonons (LO₁ = 31 meVandLO₂ = 45 meV, respectively); hv_G = 2.036 ± 0.004 eV, radiative recombination at indirect transition with emission of LO₁ phonons.     

Effects of noise on detection of amplitude increments of sinusoidal vibration of the skin.

Vibrotactile thresholds for detecting a 300-Hz signal in the presence of both a 300-Hz sinusoidal pedestal and a background noise were measured as a function of the amplitudes of the pedestal and noise. Threshold increased monotonically as a function of the amplitude of the noise, but was a nonmonotonic function of the amplitude of the sinusoidal pedestal. Negative masking, in which the pedestal facilitated detection of the test stimulus, was observed in the absence of background noise and in the presence of subthreshold background noise when the pedestal was near or below threshold. Negative masking disappeared when the experiment was conducted in the presence of moderately intense to intense background noise. The results are consistent with a peripheral high-energy threshold for taction.     

Q factor of lithium niobate piezoelectric transducers at high excitation levels

The variations of the electroacoustic parameters (Q factor, electromechanical coupling coefficient, and capacitance) of lithium niobate piezoelectric transducers with increasing high-frequency excitation voltage are studied experimentally. The relative acoustic strain is found to reach a maximum of about 10^?4 in the frequency range from 2 to 3 MHz. The Q factor of the transducers may increase by 100% in the range of acoustic strains studied. This increase is accompanied with acoustic emission. The reason for this effect is the block structure of the lithium niobate crystal.     

Modulation interference in detection and discrimination of amplitude modulation

Two experiments were conducted to assess the effect of the rate of sinusoidal amplitude modulation (SAM) of a masker tone on detection of SAM of a probe tone (experiment 1) or on SAM-rate discrimination for the probe tone (experiment 2). When modulated at the same rate as the probe, the masker interfered with both the detection of probe modulation and the discrimination of the rate of probe modulation. The interference was obtained when the masker was either higher or lower in frequency than the probe (the probe and masker were separated by 2 oct). The amount of interference in detecting probe modulation (experiment 1) decreased as the common base rate of modulation was increased from 5 to 200 Hz. For rate discrimination (experiment 2), the amount of interference remained approximately the same for base rates of 2-40 Hz, the range over which rate discrimination was measured. In both experiments, the amount of interference was reduced when the masker was modulated at a different rate than the probe.     

Edge cathode luminescence of zinc-selenide single crystals at high levels of excitation

Investigating cathode-luminescence spectra over a broad range of temperature at high levels of excitation (G 10²⁷ cm^–3 · sec^–1) permits the establishment of the experimental conditions for the observation of a multiplasmon structure in studying electron-hole plasma of zinc-selenide single crystals.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 69–73, July, 1989.     

Intensity discrimination and detection of amplitude modulation in electric hearing

Wojtczak and Viemeister [J. Acoust. Soc. Am. 106, 1917-1924 (1999)] demonstrated a close relationship between intensity difference limens (DLs) and 4-Hz amplitude modulation (AM) detection thresholds in normal-hearing acoustic listeners. The present study demonstrates a similar relationship between intensity DLs and AM detection thresholds in cochlear-implant listeners, for gated stimuli. This suggests that acoustic and cochlear-implant listeners make use of a similar decision variable to perform intensity discrimination and modulation detection tasks. It can be shown that the absence of compression in electric hearing does not preclude this possibility.     

Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped-GaAs crystals at 77 K on the concentration of background acceptor impurities and the level of excitation in the range from 3×10²¹ to 6×10²² quantum/(cm² s) are investigated. The observed dependences are explained by formation of the density tails of states as a result of fluctuations of impurity concentration and participation of localized states of the donor impurity band in radiative transitions. Reduction of many-particle interaction at increasing of N can be connected with increasing of shielding of charge carriers by atoms of impurity.