High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions

Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/cluster. Si_n⁺ ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size.     

SIMS of silicon bombarded with Sb m + cluster ions

The emission of Si _n ⁺ (n = 1–11) cluster ions and Si _n X _m ⁺ (X stands for B or Sb) polyatomic ions when bombarding a single silicon crystal with Sb _m ⁺ (m = 1–4) cluster ions with energies E ₀ = 3–12 keV is studied. Considerable nonadditive enhancement of the yield of Si _n ⁺ cluster ions and most polyatomic ions is observed when the number of atoms in the bombarding cluster ions is increased. The sensitivity enhancement factor for detecting boron impurities is as high as 50 when the cluster-SIMS-molecule technique is applied.     

Electron emission from a metal surface bombarded by highly charged ions

Electron emission yields and energy spectra for impact of Ar^q+ (1⩽q⩽12) and Ta^q+ (7⩽q⩽21) ions on clean tungsten and gold are presented. The contribution of Auger emission processes have been investigated as function of ion energy, cleanness of surfaces and ion charge state.     

Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions

Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si⁺ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si₄⁺ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO⁺ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields.     

Continuous electron energy spectra ejected from solid carbon targets bombarded with light and heavy ions

Energy distributions of electrons were measured under an observation angle of 42.3° by bombarding thin carbon foils with protons of 0.5 to 2.5 MeV and with Neon of 10 MeV energies. Comparison of the experimental results with binary-encounter-approximation calculations, taking into account the electron energy loss in the solid, show that the spectra from proton bombardment can be described by this model.     

Surface properties of germanium bombarded by nitrogen ions

Results are given for ions of energy 1800 eV. Measurements have been made of the rate of surface recombination and of the surface conductivity for specimens of specific resistance 10 and 40 ohmcm. The results are interpreted in terms of donor level production, in agreement with earlier work. Trapping curves derived from the surface conductivity are used to deduce the position of the donor levels relative to the middle of the forbidden band.     

Sputter yields in diamond bombarded by ultra low energy ions

Artificial diamond is an ideal material for high power, high voltage electronic devices, and for engineering use in extreme environments. Diamond process development requires parallel development in characterization techniques such as ultra low energy SIMS (uleSIMS), especially in the ability to depth profile for impurities and dopants at high depth resolution.As a contribution to the background knowledge required, we have measured the sputter yields of single crystal high pressure high temperature (HPHT) diamond using O₂⁺, Cs⁺ and Ar⁺ primary ions in the energy range 300 eV to 2 keV. We compare these with yields for silicon and GaAs. We show that the erosion rates with oxygen are ∼10 times what would be expected from ballistic processes and essentially energy independent in the measured range. This result agrees with the anomalously high sputter yield observed in the ion etching context. Conversely, positive ion yields for elements such as boron are very low in comparison with silicon. This points to a reactive ion etching process liberating CO or CO₂ rather than sputtering as the principal erosion process.This is both problematic and beneficial for SIMS analysis. Oxygen can be used to reach buried structures in diamond efficiently, and the effects of the near-normal incidence beam are planarizing as they are in silicon. Conversely, since positive ion yields are low, alternative probes or strategies must be found for high sensitivity profiling of electropositive elements.     

H3+团簇离子与固体相互作用

报道了H3+团簇通过碳膜对产生的各种产物的测量结果.分析讨论了三原子离子团簇与固体相互作用中的电荷交换过程.证明在产物的形成中,电荷交换过程起关键作用.分析研究了H3+团簇与固体作用中的团簇效应和尾流效应. 关键词： H3+团簇 电荷交换 团簇效应 尾流效应     

Secondary-ion emission from silicon bombarded with atomic and molecular noble-gas ions

The emission of Si⁺ from a clean silicon surface has been studied for bombardment with various atomic and molecular noble gas ions at energies between 1.5 and 30 keV. It was found that the degree of ionization of Si⁺ depends strongly (l?inearly) on the projectile energy but only weakly on the projectile mass. These results suggest that the degree of ionization is heavily affected by the (dynamic) perturbation of the bulk properties of the bombarded area which increases with increasing nuclear energy deposition.     

Emission of radiation by charged particles reflected from solid surfaces

It is predicted that charged particles reflected from solid surfaces could emit radiation due to the change in their direction of motion upon reflection. The theoretical spectrum of this radiation is obtained for specular reflection. The general concept of ‘transition radiation’ is reconsidered to include this new effect which is found to dominate for low-energy, non-penetrating electrons and for high-energy electrons at grazing incidence.     

Investigation by ellipsometry of the damage in GaAs bombarded with low-energy Ar ions

The crystalline-amorphous transition in GaAs induced by Ar ions (energy 1–3 keV) has been investigated using single-wavelength ellipsometry. The experiments have been performed in-situ at room temperature. Ion damage straggling, amorphization threshold and critical energy density have been derived by means of a simple analytical model for the growth of the amorphous layer. This model is discussed and the corresponding calculations are found to be in satisfactory agreement with experimental data.     

Emission of circularly polarized recombination radiation from p-doped GaAsP bombarded with longitudinally polarized electrons

We report measurements of circularly polarized recombination radiation from a GaAs_0.6P_0.4 crystal bombarded with longitudinally spin polarized electrons of 10 eV energy. Qualitatively, this process can be considered as the inverse of the photoemission utilized in GaAs and GaAsP polarized-electron sources. The measured degree of circular polarization is 0.29%±0.06% if the crystal is cooled with liquid nitrogen and the incident electrons are 15%±3% polarized.     

Frozen methanol bombarded by energetic particles: Relevance to solid state astrochemistry

Methanol is an important precursor of many complex prebiotic species and is found abundantly, in solid phase, in several astrophysical environments, such as comets and protostars. These environments are, in general, subjected to some form of ionizing particles as cosmic rays, solar wind particles and/or photons. To simulate physico chemical effects of cosmic rays on methanol and to investigate in particular its fragmentation and cluster emission from the solid phase, condensed methanol at 55 K was bombarded with ∼65 MeV heavy ions constituted by ²⁵²Cf fission fragments. Mass spectra of positive desorbed ions were obtained using a time-of-flight Plasma Desorption Mass Spectrometry (PDMS-TOF), giving information on the fragmentation pattern and abundance of the ionic species released from the frozen sample surface. Since and CH₃O⁺ are the most abundant species detected, the hydrogenation and de-hydrogenation of methanol result to be the predominant ionic processes in the methanol surface. Furthermore, the hydrogenation yields emission of the (CH₃OH)_nCH₃ cluster series, while the CH₃O⁺ species does not attach to methanol molecules. The production of other cluster ion series, some of them with mass/charge up to 300 u/e was also analyzed by PDMS.     

Distributions of ions in a cluster plasma created by a laser pulse

Energy and charge distributions of ions are calculated for a cluster beam irradiated by a high-power ultrashort laser pulse. It is shown that the self-consistent field of a cluster ionized by the laser beam strongly affects the characteristics of the ion distributions obtained after the cluster explodes. The mean concentration of atoms bound into clusters in a beam, the cluster size distribution, and the focal-spot diameter are found to have a weak effect on both energy and charge distributions of the ions, whereas the energy spectrum of the produced ions is determined by the mean cluster size.     

高电荷态离子207Pb36+与金属Nb表面作用产生的二次离子产额

本文报道了利用兰州重离子加速器国家实验室的ECR离子源引出的高电荷态离子207Pb36 入射到金属Nb表面产生的二次离子的实验测量结果.实验发现,二次离子产额Y随入射初动能Ek的增加有先增加后减小的关系,在初动能为576 keV时二次离子产额达到最大.通过对实验点做高斯拟合发现,曲线峰值对应的入射初动能为602 keV.分析表明,这是势能沉积作用与线性级联碰撞过程协同作用的结果.高电荷态离子本身携带的高势能沉积在靶表面引起势能溅射,促进了二次离子的发射;而主导二次离子溅射的过程是动能溅射,它与靶表面的动量沉积(核能损)过程密切相关.     

Sputtering yields of PMMA films bombarded by keV C60 ions

A quartz crystal microbalance (QCM) has been used to determine total-mass sputtering yields of PMMA films by 1-16 keV C₆₀^+,2+ ion beams. Quantitative sputtering yields for PMMA are presented as mass loss per incident ion Y_m. Mass-lost rate QCM data show that a 13 keV C₆₀ cluster leads to emission equivalent to 800 PMMA molecules per ion. The power law obtained for the increase in sputtering yield with primary ion energy is in good agreement those predicted by “thermal spike” regime and MD models, when crater sizes are used to estimate sputtering.     

Radiation from silver films bombarded by low-energy electrons

Emission spectra from Ag films irradiated by low energy electrons (20–1500 eV) have been measured, and the results compared with theory. For relatively smooth films, two peaks in the spectra are resolved. One at 3.73 eV, the volume plasmon energy, is attributed to transition radiation and/or bremsstrahlung. The second, at about 3.60 eV, is very sensitive to surface roughness in both position and magnitude and is produced by roughness-coupled radiation from surface plasmons. For rough films, the roughness-coupled radiation dominates the emission. In addition to spectral shapes, the polarization of the radiation and its intensity as a function of electron energy were measured. The experimental results are compared with new calculations of roughness-coupled emission which account for most of our observations. They indicate that high wavevector roughness components play the dominant role in the emission process.