Electron energy relaxation time in Si and Ge

The electron energy relaxation time τ_? has been analytically evaluated as a function of lattice temperature taking into account the electron-lattice scattering mechanisms for Si and Ge. Calculations have been carried on in the deformation potential approach including nonparabolicity and overlap corrections with a Maxwell-Boltzmann distribution function, and have been limited to the warm electron range. Since theoretical results agree only qualitatively, even accounting for different approaches, with available data, τ_? has been related to β a physical quantity given by a wealth of experimental data. Theoretical results agree satisfactorily with β and seem to indicate that the present theory is essentially sound. A comparative study of lattice scattering for Si and Ge evidences the different effects of the various electron-phonon scattering mechanisms upon τ_?.     

氢化作用对低能电子束辐照下GaN发光演变的影响

结合氢在GaN中的扩散特性,运用阴极荧光（CL）谱,对氢化前后低能电子束辐照下GaN带边发光强度的演变进行了研究.实验发现,氢化前GaN在低能电子束辐照下带边发光强度呈现衰减的趋势,而氢化后带边发射强度先上升后衰减,而且氢化后的衰减比氢化前弱.1 h辐照过程中,氢化后GaN带边发光强度的变化比氢化前要小很多.另外,实验中发现经过氢化处理的GaN在辐照后20 h内没有观察到带边发射强度的恢复.研究表明氢原子在GaN中可以钝化缺陷来增强发光,但这种钝化缺陷的作用必须通过克服高的扩散势垒来实现,而低能电子束可以 关键词： 阴极荧光 低能电子束 氢化 演变     

Surface dynamics and reconstruction of Si and Ge

The dynamical behavior of a Si(III) and a Ge(III) surface is studied. The formation of a superstructure, i.e. the surface reconstruction, is shown to be a consequence of the softening of surface phonons. Within our model we derive a (7×7) reconstruction for Si and an (8×8) reconstruction for Ge. A buckled model for the superstructure on Si(III) surface as well as on the Ge(III) surface is proposed.     

Migration energy of interstitial ions in Si and Ge

The equilibrium site and migration energy of interstitial point charges in Si and Ge are calculated using pseudopotential band-structure results. They are sensitive to the microscopic distribution of electronic charge in the host crystal and even more to the local-field component of the induced electron polarization density. The case of small interstitial ions is also discussed.     

真空中电子辐照下聚四氟乙烯沿面闪络电压特性

为了研究聚四氟乙烯材料(PTFE)在空间粒子环境中放电规律及其影响因素,通过实验获得了高真空低能电子辐照下PTFE高压直流沿面闪络电压,并采用等温电位衰减法测试了PTEE在辐照前及辐照后的陷阱密度,分析了影响PTEE沿面闪络电压的因素。研究结果表明：相比于无辐照时PTFE沿面闪络电压,当辐照电子能量为19~25 keV时,闪络电压明显更高;在电子束流密度不变的情况下,电子能量越高,材料表面正电荷密度越小,陷阱密度与电导率越大,电场畸形程度越小,因此闪络电压升高;当电子能量一定时,束流密度越高,初始电子数量和二次电子数量越多,因此闪络电压降低。     

Surface plasmon microscopy using an energy-filtered low energy electron microscope

We present low energy electron microscope (LEEM) spectromicroscopy studies of surface plasmons, localized on micro- and nanoscale epitaxial Ag islands. Excellent agreement is found in a direct comparison of wave vector dependent plasmon intensity with theory, demonstrating that high quality quantitative data can be obtained with a large improvement in both spatial and temporal resolution over traditional electron scattering experiments. The plasmon signal from Ag islands is successfully imaged with a spatial resolution of less than 35 nm. LEEM based plasmon spectromicroscopy promises to be a powerful tool for furthering our understanding of nanoplasmonics.     

Positron lifetime measurements on electron irradiation damage in amorphous Pd80Si20 and Cu50Ti50 alloys

Positron lifetime measurements were performed on amorphous Pd₈₀Si₂₀ and Cu₅₀Ti₅₀ alloys irradiated with 3MeV electrons at 20K. The irradiation was found to increase the mean positron lifetime in both specimens indicating the presence of vacancy-like radiation damage. Isochronal annealing between 77 K and 300 K resulted in a continuous reduction of the positron lifetime, which suggests a gradual recovery of the irradiation induced defects.     

A permanent magnet electron beam spread system used for a low energy electron irradiation accelerator

The development of irradiation processing industry brings about various types of irradiation objects and expands the irradiation requirements for better uniformity and larger areas. This paper proposes an innovative design of a permanent magnet electron beam spread system. By clarifying its operation principles, the author verifies the feasibility of its application in irradiation accelerators for industrial use with the examples of its application in electron accelerators with energy ranging from 300 keV to 1 MeV. Based on the finite element analyses of electromagnetic fields and the charged particle dynamics, the author also conducts a simulation of electron dynamics in magnetic field on a computer. The results indicate that compared with the traditional electron beam scanning system, this system boosts the advantages of a larger spread area, non-power supply, simple structure and low cost, etc., which means it is not only suitable for the irradiation of objects with the shape of tubes, strips and panels, but can also achieve a desirable irradiation performance on irregular constructed objects of large size.     

Electron states in Ge and Si under uniaxial stress

The electron states in Ge and Si under uniaxial stress in the (100) direction are computed with the pseudopotential method. The theoretical results are compared with optical measurements of the indirect absorption edge in Si and Ge under uniaxial stress and with the polarization dependence and the splittings of donor levels.     

Surface modification study of low energy electron beam irradiated polycarbonate film

The effect of low energy electron beam irradiation on polycarbonate (PC) film has been studied here. The PC film of thickness 20 μm was exposed by 10 keV electron beam with 100 nA/cm² current density. The irradiated film was characterized by mean of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and residual gas analyzer (RGA). Formation of unsaturated bonds and partial graphitization of the surface layer are measured by XPS. Results of the AFM imaging shows electron implantation induce changes in surface morphology of the polymer film. The residual gas analyzer (RGA) spectrum of PC is recorded in situ during irradiation. The results show the change in cross-linking density of the polymer at the top surface.     

Temperature dependent low energy electron microscopy study of Ge growth on Si(1 1 3)

We investigated the initial Ge nucleation and Ge island growth on a Si(1 1 3) surface using low energy electron microscopy and low energy electron diffraction. The sample temperature was varied systematically between 380 °C and 590 °C. In this range, a strong temperature dependence of the island shape is observed. With increasing temperature the Ge islands are elongated in the direction. Simultaneously, the average island size increases while their density decreases. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced.     

Surface free energy of ultra-high molecular weight polyethylene modified by electron and gamma irradiation

Surface free energy of biocompatible polymers is important factor which affects the surface properties such as wetting, adhesion and biocompatibility. In the present work, the change in the surface free energy of ultra-high molecular weight polyethylene (UHMWPE) samples, which is produced by electron beam and gamma ray irradiation were, investigated. Mechanism of the changes in surface free energy induced by irradiations of doses ranging from 25 to 500 kGy was studied. FTIR technique was applied for sample analysis. Contact angle measurements showed that wettability and surface free energy of samples have increased with increasing the irradiation dose, where the values of droplet contact angle of the samples decrease gradually with increasing the radiation dose. The increase in the wettability and surface free energy of the irradiated samples are attributed to formation of hydrophilic groups on the polymer surface by the oxidation, which apparently occurs by exposure of irradiated samples to the air.     

Surface segregation measurements during electron irradiation

Abstract

The growth of Ni3Si surface films on Ni-12.7at%Si alloys has been measured during lMeV electron irradiation. Stereoscopic techniques were used to determine film thickness from dark field images formed from Ni₃Si superlattice reflections. Parabolic growth kinetics are observed at lower temperatures. However, at higher temperatures, deviations from parabolic kinetics are observed after short irradiation times. Such deviations have not been observed in bulk specimens during bombardment with energetic ions and, therefore, may be due to foil thickness effects.     

高能电子辐照绝缘厚样品的表面电位动态特性

采用数值计算和实验测量相结合的方法, 阐明了高能电子束照射下绝缘厚样品的表面电位和电子产额动态特性. 结果表明: 由于电子在样品内部的散射和输运, 沿着深度方向, 空间电位先缓慢下降到最小值, 然后逐渐升高并趋近于零; 随着电子束照射, 样品的表面电位逐渐下降, 可至负千伏量级, 电子总产额逐渐增大至一个接近于1的稳定值; 电子束停止照射后, 长时间放置下, 表面电位将逐渐升高, 但带电并不会消除; 表面电位随电子束能量的升高近似线性下降, 随入射角的增大而升高, 而随样品厚度的增大仅略有下降.     

Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires

We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels epsilon(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3+/-0.1 eV below the vacuum level. Calculations of epsilon(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.     

Probing adsorbate state lifetime with low energy ions

Charge transfer during back scattering of a H- ion from a Cu(111) metal surface with Cs adsorbates is studied theoretically within a wave packet propagation approach. We show that the long lifetime of the Cs-localized state in the Cs/Cu(111) system deeply modifies the nature of projectile-surface charge transfer, suppressing its irreversible character. Back and forth electron transfer between the projectile and the adsorbate during the collision results in characteristic oscillations in the H- yield as a function of projectile energy.     

Reversible changes in the microhardness of silicon crystals under electron irradiation with low doses

Reversible softening of silicon single crystals under β irradiation with low doses (D<1 cGy) is revealed. The peaks observed in the dependence of the microhardness of silicon on the fluence are explained by the multistage competing processes of transformations of radiation-induced defects.     

Pulsewidth-dependence of nonlinear energy deposition and redistribution in Si, GaAs and Ge during 1 μm picosecond irradiation

We have used 1 μm pulses ranging in duration from 4–260 ps to measure the pulsewidth dependence of the nonlinear absorption, melting threshold, and resolidification morphologies of Si, GaAs, and Ge. With these materials, we have been able to quantify a variety of nonlinear absorption processes with a single excitation wavelength. We find that the fluence required to melt Si and GaAs is roughly proportional to the square root of the pulsewidth while that required for Ge is nearly pulsewidth independent. A crystalline-to-amorphous transition is observed in Si for pulses less than 10 ps and in GaAs for all pulsewidths, but no such transition is observed in Ge. These observations are shown to be consistent with the various energy deposition and redistribution mechanisms present in each material. Finally, we have used the active nonlinearities in Si and GaAs to construct optical limiters designed to protect sensitive optical components from intense 1 μm radiation.