Hydrostatic pressure effects on exciton states in InAs/GaAs quantum dots

Based on the effective-mass approximation, the hydrostatic pressure effects on exciton states in InAs/GaAs self-assembled quantum dots (QDs) are studied by means of a variational method. Numerical results show that the exciton binding energy has a minimum with increasing dot height for any hydrostatic pressure. The interband emission energy increases when the hydrostatic pressure increases. In particular, we find that hydrostatic pressure has a remarkable effect on exciton states for small QD size. Our results are in agreement with experiment measurements.     

Magneto-reflectance of the 1S exciton ground states in InP and GaAs

The reflectance due to the 1S exciton of InP and GaAs is studied in magnetic fields up to 12 T in the Faraday and Voigt configurations. Electron-hole exchange interaction is taken into account in a perturbation model on degenerate exciton states in cubic crystals to explain the splitting and the field dependence of the oscillator strengths of the J = 1 and J = 2 exciton states. Electron and hole g-values are estimated.     

Resonant Mandelstam-Brillouin light scattering and Raman scattering in semiconductors with intermediate exciton states belonging to discrete exciton bands and the continuous spectrum

The results of a theoretical and experimental investigation of resonant Mandelstam-Brillouin light scattering by thermal acoustic phonons with k=0 near the direct absorption edge (in the case of ZnSe crystals) are analyzed. The appearance of a new type of resonant increase in the intensity of Raman scattering by optical phonons with k≠0, which corresponds to resonance with the scattered light in the output channel, near the indirect absorption edge (in the case of semi-insulating GaP:N crystals) is also reported. The resonant gain reaches ∼4×10³ at frequencies corresponding to overtone scattering assisted by LO(X) and LO(L) phonons. Exciton states belonging to both discrete exciton bands and to the continuous spectrum are considered as the intermediate states involved in the scattering processes in calculations of the resonant scattering tensors. In addition, all the intraband transitions, as well as the interband transitions between the conduction band, the valence bands, and the spin-orbit split-off band are taken into account, and good agreement with the experimental results is obtained. Fiz. Tverd. Tela (St. Petersburg) 40, 938–940 (May 1998)     

Resonant exciton trapping at impurity states in silver bromide

Excitation spectra near the indirect exciton edge of AgBr at 1.8K are reported for several luminescence lines from weakly localized excitons. Excitation below the exciton absorption threshold reveals several excited bound exciton states the energetic positions of which are determined. For excitation above the threshold, strong energy dependent structure is observed. It is interpreted in terms of resonant trapping of free excitons in both ground and excited bound exciton states associated with emission of LO(Γ), long wavelength acoustic and intervalley TA(X) and LA(X) phonons as well as combinations and overtones of these. From measurements in doped crystals two bound exciton systems are found to be correlated with Cd²⁺ and Ca²⁺, respectively.     

Lateral confinement of exciton states in GaAs/GaAlAs quantum wells grown on vicinal substrates

Il Nuovo Cimento D - We report experimental results on photoluminescence and excitation of photoluminescence of GaAs/Ga0.7Al0.3As quantum wells (19, 38.5 and 77 Å) grown on nominal and vicinal...     

Lateral confinement of exciton states in GaAs/GaAlAs quantum wells grown on vicinal substrates

Il Nuovo Cimento D - We report experimental results on photoluminescence and excitation of photoluminescence of GaAs/Ga0.7Al0.3As quantum wells (19, 38.5 and 77 Å) grown on nominal and vicinal...     

Saturation of the free exciton resonance in GaAs

The transmission of 500 ns pulses through GaAs-AlGaAs heterostructures has been studied as a function of light intensity (0.015 to 50 kW/cm²) and wavelength (810 to 840 nm). The intrinsic exciton absorption (λ=818 nm at 10°K) can be modeled by the sum of a small unsaturable background and a dominant term which saturates as a Bloch resonance with a saturatiom parameter of about 150 W/cm².     

Solid state effects on exciton states and optical properties of PPV

We perform ab initio calculations of optical properties for a typical semiconductor conjugated polymer, poly-para-phenylenevinylene, in both isolated chain and crystalline packing. In order to obtain results for excitonic energies and real-space wave functions we explicitly include electron-hole interaction within the density-matrix formalism. We find that the details of crystalline arrangement crucially affect the optical properties, leading to a richer exciton structure and opening nonradiative decay channels. This has implications for the optical activity and optoelectronic applications of polymer films.     

Observation of exciton quenching in GaAs at room temperature using electrolyte electroreflectance

We have observed pronounced excitonic effects at room temperature near the E₀ transition (direct gap at k = 0) of GaAs, using the electrolyte electroreflectance technique. The large changes in the spectral lineshape are interference phenomena due to exciton quenching in the high electric fields of the space charge region. Support for this model is provided by an analysis of the lineshape variation, which is periodic in the width of the space charge region.     

Properties of exciton states in GaAs/AlGaAs quantum wells in the presence of a quasi-two-dimensional electron gas

The changes in binding energy and oscillator strength of the exciton state due to the screening by a quasi-two-dimensional electron gas are calculated self-consistently in the approximation of noninteracting electrons and in the local field approximation. It is shown that the collapse of the bound state occurs at very low concentrations, N _s≈5×10⁹ cm^?2, which is a consequence of the inclusion of the nonlinearity of the response of the system to a Coulomb perturbation. The temperature dependence of the exciton collapse is investigated. The phase diagram of the dissociation of the given bound state is constructed, and the region in which it is possible to observe experimentally the temperature dependence of the exciton collapse is indicated.     

Shallow acceptor bound exciton and free exciton states in high-purity zinc telluride

We investigated excitons bound to shallow acceptors in high-purity ZnTe and measured excitation spectra of two-hole luminescence lines at 1.6 K using a tunable dye-laser. The electron-hole coupling in the bound exciton (BE) states appears to be very different for the various acceptors even for almost identical exciton localisation energies. Three different types of BE are reported. For the Li-acceptor BE we observe three sub-components separated by 0.22 and 0.17 meV and interpreted as J = $\text{1}\text{2}$, $\text{3}\text{2}$, $\text{5}\text{2}$ states. The Ag-acceptor BE exhibits a strong ground state and a weak excited state at 1.3 meV higher energy. For the as yet unidentified k-acceptor we observe a single BE level, degenerate with the Ag-acceptor BE ground state. Dips in the excitation spectra due to absorption into free exciton 1S, 2S, and 3S states yield an exciton Rydberg R₀ = 12.8±0.3 meV and a free exciton binding energy FE(1S) = 13.2±0.3 meV.     

Selective non-radiative transitions at excited states of the self-trapped exciton in alkali halides

Generation of F-H pairs and σ-luminescence induced by excitation of the self-trapped excitons with polarized light causing the 1s→ 2p transitions has been measured. The results were analyzed based on the assumption that the non-radiative transitions that follow photoexcitation depend only on the state reached by the excitation, irrespective of the photon energy of the excitation. The absence of the dependence on exciting photon energy of the effective yield of removal from the triplet manifold after excitation to each substate obtained from the analysis proves that the above assumption is valid. The relative non-radiative transition probabilities between the 2p substates and from the 2p-substates to the lowest triplet state, the F-H pair, the σ-luminescent state and the ground state were obtained. It is shown that the de-excitation channels from each substate are substantially different from each other. The following transitions are found to have high probabilities: from the B_1g state to the F-H pairs in KCl and KBr, from theA_g state to the σ-luminescent state and the lowest triplet state in KBr and to the lowest triplet state in KCl and from the B_2g state to the B_1g state in KCl and KBr, where A_g, B_1g and B_2g denote the states with the electron excited to the σ_u orbital, the π_u orbital lying in the (100) plane in which the (halogen)₂^?-molecular ion is situated and the other π_u orbital, respectively. The mechanisms of these non-radiative transitions were discussed.     

Surface bound states in the continuum

We introduce a novel concept of surface bound states in the continuum, i.e., surface modes embedded into the linear spectral band of a discrete lattice. We suggest an efficient method for creating such surface modes and the local bounded potential necessary to support the embedded modes. We demonstrate that the surface embedded modes are structurally stable, and the position of their eigenvalues inside the spectral band can be tuned continuously by adding weak nonlinearity.     

Analytical expression of transition form factors from discrete spectrum nS states to continuum states of hydrogen-like atoms

The new approach to calculation of transition form factors of hydrogen-like atoms is proposed. The explicit analytical expressions of transition form factors from arbitrary discrete states to continuum are obtained in terms of classical polynomials.     

Tunneling through discrete levels in the continuum

We study the ballistic transport in quantum channels containing attractive impurities. We show that coherent interaction between asymptotic resonances may cause resonances to disappear and discrete levels to appear in the continuum at certain (critical) values of the parameters of the system. For the first time the tunneling of an electron through discrete levels is investigated. We find that the transmissivity changes dramatically when the scattered electrons at infinity have an energy coinciding with that of the discrete levels. It is found that a new type of degeneracy may arise in the system at critical values of the parameters, a degeneracy in which one state is described by a localized wave function and the other, by a propagating wave function. We calculate the critical values of the parameters of the structure and discuss ways of experimentally implementing this effect in two-dimensional channels. Zh. éksp. Teor. Fiz. 115, 211–230 (January 1999)     

Intensity-reversal in the donor bound exciton luminescence of GaAs

A self-reversal model is presented to explain the luminescence dependence of the donor bound exciton intensity. The line broadening mechanism is attributed to rotational interaction with non-rigid rotator states. Line reversal results from absorption by non-broadened states near the crystal surface. The absence of a similar excitation intensity dependence for acceptor bound excitons is explained.