Rule of corresponding Auger spectra

The normalized core-valence-valence Auger spectra A(?) of the simple metals Be, Mg, and A$\text{l}$, when plotted as a function of ?/2λ, where λ is the free-electron Fermi energy, are all nearly the same. Li, with λ=4.1±0.1 eV, also has the same spectrum. This suggests that the Auger spectra of simple metals depend primarily on the electron gas density and are almost independent of details of the band structure.     

Angular distributions of auger electron emission: Clean and gas-adsorbed polycrystalline Ni surfaces

The excitation angle (β) and emission angle (θ) dependences of the Ni M₂,₃VV (61 eV) and Ni L₃VV (850 eV) Auger emissions from clean polycrystalline Ni surfaces, and the S L₂, ₃ M₂, ₃M₂, ₃ (150 eV) Auger emission from S-adsorbed poly-Ni surfaces have been investigated. In the case of Ni (61 eV) and S Auger emissions, the β-dependence shows the $\text{1}\text{cos β}$ distribution, while a significant deviation from $\text{1}\text{cos β}$ is observed for Ni (850 eV) Auger emission. The cosθ distribution and the intermediate between isotropic and cosθ distributions are observed for Ni (61 eV), and for Ni (850 eV) and S Auger emissions, respectively. Those results have been found to be in fairly good agreement with the calculations based on the simple continuum model without consideration of the diffraction effect and the inherent anisotropic emission.     

High energy xps using a monochromated Ag Lα source: resolution,sensitivity and photoelectric cross sections

Resolution, sensitivity and calibration data are presented for a novel high energy XPS source, monochromated Ag Lα radiation (hv = 2984.3 eV). Adequate resolution is attainable for good signal/noise spectra, whilst values for experimental sensitivity factors agree well with theoretical cross section values calculated by Nefedov. This allows an evaluation of ESCA 3 Mk. II transmission function up to 3000 eV, which appears to obey an approximate E^{$\text{?1}\text{2}$} dependence. Monochromated Ag Lα (linewidth 1.3 eV) overcomes the problem of broad natural linewidths for high energy sources, such that chemical state information can be gained. Various new core level and Auger peaks are developed, a notable feature being the 1s core level and KLL Auger transition capability from Al through to Cl. Improved sensitivity is experienced for elements whose major peaks occur in the 1500–3000 eV BE range, whilst there is no serious reduction of sensitivity in the conventional XPS energy range.     

Intrinsic surface state on Be(0 0 0 1)

Using monochromatized synchrotron radiation in the range 24–30 eV, we have recorded angle-resolved photoemission spectra from a clean Be(0 0 0 1) crystal face. A surface state located in a band gap around Γ with an initial state energy of ?2.8 eV in normal emission was found. For k_∥ along the $\text{Γ}$$\text{M}$ line the surface state disperses upwards and passes E_F at about 55% of the distance to the surface Brillouin zone boundary.     

Delayed onset of 4d photoemission relative to the giant 4d photoabsorption of La

For the giant 4d photoabsorption of La, both the total photoabsorption spectrum and the N_4.5-derived Auger emission intensity spectrum increase significantly above hν ? 112 eV, with spectral peaks at hν = 118 and 119 eV, respectively. However, the predominant 4d photoemission partial cross section shows a delayed onset of ～ 4 eV, with a peak at hν = 121 eV, while the 5s, 5p, and 5d partial cross sections all show a strong resonant enhancement at lower energies, with spectral peaks at hν = 116.6 eV. These results are compared with a recent many-body calculation for Ce. The photon energy dependence of the La 4d_{$\text{5}\text{2}$}/4d_{$\text{3}\text{2}$} photo-emission branching ratio is consistent with a “final-state model.”     

Room temperature adsorption and growth of Ga and In on cleaved Si(111)

Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements have been performed on a set of ultrahigh vacuum cleaved Si(111) surfaces with different bulk dopings as a function of Ga or In coverage θ. The metal layers are obtained by evaporation on the unheated substrate and θ varies from zero to several monolayers (ML). First, the 2×1 reconstruction of the clean substrate is replaced by a $\text{3}\text{×}\text{3}$ R30° structure at $\text{1}\text{3}$ ML, meanwhile the dangling bond peak at 0.6 eV below the valence band edge E_vs is replaced by a peak at 0.1 eV for Ga or 0.3 eV for In, below E_vs. At the same time, the ionization energy decreases by 0.4 eV (Ga) or 0.6 eV (In), while the Fermi level pinning position gets closer to the valence band edge by about 0.1eV. Upon increasing θ, new LEED structures develop and the electronic properties keep on changing slightly before metallic islands start to grow beyond θ ～1 ML.     

Structure dependent stimulated de-excitation of Auger electrons from clean Be surfaces

High energy satellites observed from the Be KVV Auger Spectrum are assigned to energy coupling from collective bulk plasma oscillations (hω_p?19eV) with emerging Auger electrons. These high energy satellites reflect the valence-bands structural characteristics which arise from an ordered and disordered phase because of the different surface preparation procedures employed.     

Quantum size effect in electron transmission through Cu and Ag films on W(110)

The transmission coefficient of very low energy electrons ( ? 10 eV) normally incident on (111) epitaxial films of Cu and Ag on W(110) is modulated by interference between scattering from the vacuum/metal and metal/metal interfaces. Comparison with calculations of free-electron scattering from a one-dimensional potential model, in which grading of the metal/metal interface is represented by a smoothing of the potential step, indicates that this interface is abrupt within approximately one layer spacing. We obtain a value of 11.0 (8.0) ± 1.0 eV for the inner potential of Cu (Ag) and mean free path lengths of $\text{39 ± 8}\text{A}\text{?}$ at an energy of 7.0 eV relative to the Fermi energy and $\text{29 ± 11}\text{A}\text{?}$ at 9.0 eV for Cu, and $\text{25 ± 10}\text{A}\text{?}$ at 7.5 eV for Ag. Work function values are obtained by the field emission retarding potential technique. We investigate the effects of the surface potential barrier, inelastic scattering and surface roughness, and evaluate the validity of the one-dimensional model presented.     

Superradiation from non-ideal plasmas in electric field

An effect of external static electric field on emission of radiation from non-ideal plasmas of erosion focus has been experimentally observed. An order-of-magnitude increase in radiation intensity for spectral interval hv = 40 ? 350 eV with electric field increasing up to 10³V/cm has been found for plasmas with $\text{ξ}\text{Z}\text{?1}$, where ξ is the number of electrons in Debye sphere, Z = 2 ? 3 is the stage of ionization. The energy emitted has been several times higher than the black body energy for the same spectral interval at maximum electric field achieved. The effect vanishes at $\text{ξ}\text{Z}\text{?10}$.     

Photoelectron diffraction effects in XPS angular distributions from GaAs(110) and Ge(110) single crystals

Angular distribution measurements of XPS intensities have been made for various spectral lines from GaAs(110) and Ge(110) single-crystal surfaces. Observed angular distribution curves (ADC's) showed steep intensity variations and sharp peaks due to X-ray photoelectron diffraction (XPED) phenomena. The effects of the type of transition process (photoelectron or Auger), electron kinetic energy and crystal structure on the XPED patterns were examined. Considerably different ADC patterns were observed for high-energy photoelectrons and Auger electrons and for low-energy photoelectrons. ADC's for Ga 3d, As 3d and Ge 3d showed almost the same patterns for scans of the type [110] → [100] → [1$\text{1}$0], but they showed substantially different patterns for [110] → [11$\text{1}$] → [00$\text{1}$] scans. These features correspond well with the structural characteristics of GaAs and Ge crystals. A discussion of the applicability of XPS angular distribution measurements to the geometric analysis of crystal surfaces is presented.     

On the ‘plasmon energy gain’ in the Be Auger spectrum

The Auger spectrum and the high energy satellite structure from evaporated Be films were investigated. There was no evidence of a plasmon gain peak 18 eV above the main Be KVV Auger peak, in disagreement with the observation of Jenkins and Zehner.¹ The high energy satellite peaks associated with the Auger peaks must be interpreted on the basis of double ionization of the initial state.     

Electron spectroscopic studies of clean and oxidized iron

X-ray photoelectron spectroscopy (XPS) and soft X-ray appearance potential spectroscopy (APS) together with Auger electron spectroscopy (AES) were used to study the electronic properties of clean and oxidized (Fe₃O₄) iron surfaces. The features arising from excitations of electrons from Fe 2p core levels are discussed consistently within the common one-electron picture (i.e. neglecting final state effects). For pure Fe the shape of the APS L₃ peak is evaluated taking into consideration the theoretical density of states above the Fermi level and is found to agree well with that observed. As a consequence it is shown that in this case the appearance potential is about 1 eV larger than the threshold energy for the excitation of a core electron to the Fermi level. Thus for $\text{2p}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ electrons this quantity results to be 704.8 eV from both XPS and APS techniques. Successive oxidation at 500°C leads to an increase of the appearance potentials of the Fe 2p levels by only 0.5 eV, whereas the positions of the corresponding XPS peaks are shifted by as much as 3.5 eV. However this apparent disagreement can be eliminated by taking into account the above mentioned effect concerning the appearance potentials from pure Fe and the fact that the threshold energies (which determine the appearance potentials) of the XPS signals are shifted only by 1.7 eV. This example demonstrates that considerable care has to be taken in discussing “binding energies” or “chemical shifts” as derived from different electron spectroscopic techniques. The observed splitting of the MVV Auger transition of Fe at 47 eV upon oxidation is interpreted in terms of the qualitative features of the valence band structure of Fe₃O₄ and ascribed to the participation of a cross-transition between O 2p and Fe 3p states.     

A new charge-correction method in X-ray photoelectron spectroscopy

The 2p_{$\text{3}\text{2}$} binding energy (242.3 eV) of Ar implanted in insulating materials is available to correct for charging shifts. Argon ions hav materials SiO₂ and soda glass. In each case the charging shift for Ar 2p_{$\text{3}\text{2}$} electrons agrees exactly with those for core-level elec The charge-corrected binding energies of the insulating materials permit the identification of atomic chemical states. Ion-induced reduction of the ins investigations.     

Proton scattering from 9Be between 6 and 30 MeV and the structure of 9Be

Differential cross-section excitation functions at lab scattering angles 86.9°, 120.0°, 140.0° and 160.0° were measured for ⁹Be(p, p_o)⁹Be, ⁹Be(p, p₂)⁹Be and ⁹Be(p, d₀)⁸Be at proton lab energies from 6 to 15 MeV in 100 keV steps. A broad anomaly was observed in the ⁹Be(p, p₀)⁹Be excitation functions. Differential cross-section angular distributions were measured for ⁹Be(p, p₀)⁹Be and ⁹Be(p, p₂)⁹Be at lab energies of 13.0, 14.0, 15.0, 21.35 and 30.3 MeV and for ⁹Be(p, d₀)⁸Be at 13.0, 14.0, 15.0 and 21.35 MeV. Angular distributions of polarization analysing powers for ⁹Be($\text{p}$,p₀)⁹Be, ⁹Be(p, p₂)⁹Be and ⁹Be($\text{p}$, d₀)⁸Be were measured at 8.0, 11.0, 12.0, 13.0 and 15.0 MeV. A spherical optical-model (SOM) analysis of the elastic scattering angular distribution data from 13.0 to 30.3 MeV showed that an energy dependence of only V_R and W_s (volume real and surface imaginary depths) is sufficient to reproduce the measurements. Coupled-channels (CC) analyses were made with a quadrupole-deformed optical-model potential and strong coupling of $\text{3}\text{2}{}^{\mathrm{?}}$, $\text{5}\text{2}{}^{\mathrm{?}}$ and $\text{7}\text{2}{}^{\mathrm{?}}$ levels of a $\text{K =}\text{3}\text{2}$ ground-state rotational band of ⁹Be. The ⁹Be(p, p₀)⁹Be and ⁹Be(p, p₂)⁹Be data from 13.0 to 30.3 MeV were analyzed simultaneously at each energy, varying only V_R and W_s with energy, for a potential deformation of β = 1.1. Both SOM and CC analyses indicated the same energy dependence in V_R, while W_s averaged 3.5 MeV lower in CC than in SOM, with both energy dependences consistent with previous analyses of nucleon scattering from 1p shell nuclei.     

A study of the (00) LEED beam intensity at normal incidence from CdS(0001), Cu(001), Cu(111), and Ni(111)

A Faraday cage apparatus is used for the measurement of the (00) LEED beam intensity, I₍₀₀₎, and the total secondary emission coefficient, δ(E_k), for angles of incidence from 0° ± 2° to 8° ± 2°, with an energy resolution of ± 0.037 of the incident beam energy, in the energy range 1 to 200 eV. The data are normalized and expressed as a fraction of the incident beam intensity. The basic principle of operation is the separation of the incident and specularly diffracted beams in a uniform magnetic field. Monolayer, or in-plane, resonances associated with the emergence of nonspecular beams, as well as beam threshold minima, are observed in I₍₀₀₎ at normal incidence from clean CdS(0001), Cu(111), and Ni(111). Some major differences are observed in the I₍₀₀₎ profiles for the clean (111) surfaces of nickel and copper. All secondary Bragg peaks, except the 2$\text{2}\text{3}$ order, have greater intensities for Ni(111) in the energy range 50–150 eV, thus indicating that the atomic scattering cross-section for electrons in this energy range is larger for nickel than for copper. For the (111) surface of nickel, the (11) resonance is missing, but the (10) resonance and all $\text{1}\text{3}$ order secondary Bragg peaks between the second and fifth orders are observed. For Cu(111) both the (10) and (11) resonances are observed, but the $\text{1}\text{3}$, $\text{2}\text{3}$, 1$\text{2}\text{3}$, and 3$\text{1}\text{3}$ order secondary Bragg peaks are missing in this energy range. These data indicate that multiple scattering with evanescent intermediate waves, or “shadowing”, is predominate on the (111) surfaces on nickel and copper for energies above 30 eV, and that below 30 eV multiple scattering with propagating intermediate waves is predominate on Cu(111). Correlation of the (00) beam intensity profiles from clean Ni(111) at 0°, 2°, and 6° with the intensity profiles of the (10). (1&#x0304;0), and (11) non-specular beams is nearly one-to-one from 30 eV to 100 eV, thus supporting the dynamical theories of LEED in which peaks in the (00) beam are expected to occur at nearly the same energies as peaks in the non-specular beams.     

Adsorption of copper on single crystal planes of tungsten

Properties of copper condensed on selected areas of a thermally cleaned tungsten surface have been studied by probe hole field emission microscopy. Interpretation of the φ_hkl?$\text{}\text{?}$gq relationship observed on (211), (111) and (310) for adsorption at T > 300 K is based on hardsphere models of the plane surfaces upon which the first monolayer of copper raises φ_ithkl, the second reduces it to a minimum value, and the third achieves $\text{}\text{?}$gf_sat on each plane. At T > 300 K the relatively low binding energy of copper on (110) prevents is population below ～2$\text{}\text{?}$gq as previously observed for lead, and the plateaux in the φ₁₁₀?$\text{}\text{?}$gq curves are thought to result from the difficulty of nucleating the first and second monolayers of copper on (110). Comparison of our observations with those made by LEED/Auger techniques emphasise significant differences between the substrates used, in that, on field emitters (110) is step-free and surrounded by a sink/ source of adatoms, while the LEED specimen is stepped but has no comparable local sink/ source. The initial changes in φ are ascribed to formation of an adsorbate-substrate dipole whose sign and magnitude is controlled by electron equilibration between the substrate metal and a broadened and partly-filled resonance level lying approximately 5.2 eV below the vacuum level. Measurement of the total energy distribution of electrons field emitted from (110) and (132) supports this picture which contrasts with that of Polanski and Sidorski who consider the dipole sign and strength to be controlled principally by adsite geometry. Low activation energies characterise surface transport which is controlled by one-plane processes, and in some cases transport across the probed area is controlled by processes of relatively high activation energy which take place outside the examined plane.     

Evidence for the Auger neutralization mechanism in secondary ion emission

Secondary ion yields, S⁺(E), for Cu⁺ ejected from Cu(111) and Cu(110) have been determined for the secondary ion kinetic energy range from l to 50 eV. A plot of log S⁺(E) versus $\text{E}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>2</mtext>}}$ falls on a single straight line over three orders of magnitude of S⁺(E). The slope. $\text{A}\text{a}$ is 2 × 10⁶ cm/s, in good agreement with values reported for the related process, the survival probability of excited neutral copper atoms ejected from a copper surface by ion bombardment. This provides strong evidence that Auger neutralization is the dominant factor governing secondary ion survival.     

The chemisorption of sulphur on W(100)

The interaction of sulphur vapour with a W(100) surface is studied in detail with Auger Electron Spectroscopy (AES), LEED, work function difference (Δ?) measurements and thermal desorption spectroscopy (TDS). The dissociative adsorption of S occurs on the W surface without reconstruction. Several LEED structures are observed which indicate repulsive adatom interactions. TDS shows that the desorption energy of atomic S decreases from about 8 eV at θ = 0.1 ML to about 3 eV near saturation in close vicinity of 1 ML. Above $\text{θ =}\text{3}\text{4}$ ML, S₂ desorbs in addition to S in a high temperature peak which saturates at about 1 ML. Sulphur in excess of about 1 ML is desorbed in two low temperature peaks of which the lower one consists not only of S and S₂ but also of S₃ and S₄.