Magnetic annealing and crystallization kinetics of the metallic glass Fe5Co70Si15B10

Magnetic annealing and crystallization kinetics of amorphous ribbons of Fe₅Co₇₀Si₁₅B₁₀ were studied. For a toroid stress-relieved at 365°C for 2 h, the anistropy energy K_u obtained by cooling in a magnetic field from 300°C was ≈1.1 × 10³erg/cm³ at room temperature. The reorientation of induced anisotropy of this toroid followed the equation for first-order kinetics closely, yielding an activation energy ΔE = 1.9 eV and a pre-exponential frequency factor v₀ = 3.2 × 10¹³s^-1. Anisotropy reorientation in a toroid partially stress-relieved at 220°C, although was clearly reversible during 8 cycles of isothermal annealing in tranverse and in longitudinal field, exhibited significant deviations from the equation for first order kinetics. Treating the data in terms of the equation for first order kinetics, a narrow spectrum of activation energy from 1.2 to 1.8 eV, with corresponding frequency factors from 1.8 × 10⁸ s^-1 to 5.6 × 10¹² s^-1, was obtained. The difference in behavior between the two samples is discussed in the light of concepts in structural relaxation recently proposed by T. Egami. Crystallization kinetics was studied on a DSC apparatus, using Kissinger's method. At 10 K/min heating rate, the temperature of incipient crystallization was found to be 770 K. The activation energies found were in the range 4.8–4.2 eV.     

Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys

Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the near band gap reflectivity spectrum E_o of Mg_xZn_1?xTe ternary semiconducting alloys. Results are given in the range 80–100 K for the cubic materials: 0〈x〈0.5. The analysis of the line shapes as a function of x and T confirms the hypothesis of an exciton bound to the complex defect associated with zinc vacancy, as ZnTe. The E_o(x) curve is parabolic. The bowing parameter is C=0.45 ± 0.1 eV at 80 K, C=0.6 ± 0.1 eV at 300 K. Within experimental scattering the temperature coefficient dE₀dT is nearly constant with x:-4.5±0.3 × 10^?4eVK^?1. This data is smaller than the value calculated in the literature for ZnTe from pseudo potential method.     

Thermally induced optical bistability in CdHgTe

We report optical bistability in a room temperature, uncoated Cd_0.185Hg_0.815Te etalon using a cw CO₂ laser at 10.6 μm. The results are consistent with a band gap resonant, dispersive nonlinearity induced by a thermal shift of the band gap energy through interband and free carrier absorption. A refractive index temperature coefficient, dn/dT ～ ? 1 × 10^-3K^-1 was measured, and bistability was observed at incident powers of 20 mW.     

Thermodynamic properties of the CeSn3 mixed valence compound

We have measured on the CeSn₃ compound, the expansion coefficient between 80 and 800 K at normal pressure, the isothermal compressibility in the 0–8 GPa pressure range at room temperature and the heat capacity at constant pressure in the 60–300 K temperature range. The experimental data were compared with those previously found for the isomorphous LaSn₃ phase, assumed as a proper reference material for the study of the intermediate valency states in CeSn₃. Both the thermal expansion (3α) and the isothermal compressibility (k) of CeSn₃ show behaviours quite different from those of LaSn₃: for instance, in the standard conditions, 3α is 55 × 10^?6K^?1for CeSn₃ and 38 × 10^?6K^?1for LaSn₃; k is 15 × 10^?12 Pa^?1 and 12 × 10^?12 Pa^?1 respectively for CeSn₃ and LaSn₃. The thermal behaviour of the molar specific heat at constant pressure of CeSn₃ is similar to that of LaSn₃ for temperatures lower than 50 K. In the 70–300 K temperature range, the heat capacity of CeSn₃ is clearly higher than that of LaSn₃, ΔC_p being maximum near 150 K. The analysis of the calorimetric data show that the electronic coefficient γ of CeSn₃ is temperature dependent: its value varies from 53 mJ K^?2 mole^?1 at low temperature 24 mJ K^?2 mole^?1 at 300 K.     

Thermal changes in the optical properties of SnSxSe2−x crystals

Optical measurements on crystals in the series SnS_xSe_2?x for 0 ? x ? 2, have yielded information on the changes in the ordinary refractive index $\text{Δn}\text{ΔT}$ and the energy gap $\text{ΔEg}\text{ΔT}$ in the temperature range 125–425 K. The coefficient $\text{Δn}\text{ΔT}$ has values +40 to +160 × 10^?6K^?1 and this confirms that covalent bonding predominantly exists in these materials. The coefficient $\text{ΔEg}\text{ΔT}$ remains fairly consistent for all values of x with an average value of -8.0×10^-4eV K^-1.     

Absolute sense of pyroelectric p3 and piezoelectric d33 coefficients in 3La (IO3)3.HIO3.7H2O

The pyroelectric coefficient p₃ in 3La(IO₃)₃.HIO₃.7H₂O has an average value 2.0×10^-5 Cm^-2 in the temperature range 152 to 240 K. The resistivity decreases from 10¹² to 10¹⁰ ohm-cm between 258 and 338 K. At 298 K, the piezoelectric coefficient d₃₃  19×10^-12CN^-1. Positive polarity is generated on (001) by increasing temperature or tensile stress. A displacement toward (001) by La³⁺ or H₃O⁺ ions of 1×10^-4 Å per K or 10⁶Nm^-2, or rotation of the water molecule or iodate ion dipoles by about 5 arc minutes per K or 10⁶Nm^-2, produces the observed polarity.     

Ab-initio theoretical analysis of thermal expansivity,thermal vibrations and melting of thorium

The thermal expansivity and mean-square thermal vibrational amplitudes were determined as a function of temperature for thorium from first principles total energy calculations using the full potential linearized augmented plane wave (FP-LAPW) method. The coefficient of thermal expansion determined from variation of theoretical potential energy with interatomic separation is ～1.427 × 10^?5 K^?1 as compared to an experimental value of 1.23 × 10^?5 K^?1. The mean-square thermal vibrational amplitudes determined as a function of temperature from the theoretically calculated volume-dependent Debye temperature agree well with experimental data derived form neutron diffraction measurements. The melting temperature of thorium, determined theoretically from the mean-square thermal vibrations and the Lindemann rule for melting, is 2234 K, as compared to the reported experimental value of 2021 K.     

Current induced deformation of charge density waves in orthorhombic TaS3

The low electric field ohmic resistance R of orthorhombic TaS₃ measured at 90 and 120 K well below the Peierls transition temperature depends on the product of a temperature difference ΔT applied along the sample and the sign of a previously applied current pulse if this pulse is larger than threshold for non-ohmic conductivity. This resistance change is about ΔR/RΔT ∽ 1×10^-3 K^-1 for a pure sample and ΔR/RΔT ∽ 6×10^-3 K^-1 for a slightly electron irradiated one at 90 K. The relative resistance change is insensitive to the sample length. We deduce that the CDW current changes inhomogeneously the Peierls gap E_g. ΔE_g < O at the contact where the CDW current enters and ΔE_g > O at the exit. The effect is attributed to a CDW current induced inhomogeneous deformation of the CDW itself.     

Cu+ ion conductivity of K2Cu(CNS)3

K₂Cu(CNS)₃ is found to be a Cu⁺ ion conductor with a room temperature (30°C) conductivity of ～5×10^?3ω^?1 cm^?1. The phase structure of the CuCNS + KCNS system and data on temperature variation of the conductivity of K₂Cu(CNS)₃ is reported. The related compound KAg(CNS)₂ is found to be a Ag⁺ ion conductor.     

X-ray study of the thermal expansion anisotropy in the quarternary semiconductor CuGaSn□Se4

Accurate lattice parameters a and c of the tetragonal chalcopyrite quaternary semiconductor CuGaSn□Se₄ have been determined as a function of temperature by the X-ray powder diffraction method in the temperature range 300 K to about 900 K. The data have been used to evaluate the axial expansion coefficients α_a and α_c at various temperatures. The thermal expansion studies revealed the anisotropy between the axial expansion coefficients having a larger coefficient of expansion along the a-axis than that along the c-axis (α_a > α_c). The mean values α_a and α_c, in the temperature range 300–900 K, are found to be 14.02 × 10^-6K^-1 and 5.02 × 10^-6K^-1 respectively, and the axial ratio, c/a, changes with a coefficient of -8.96 × 10^-6K^-1. This result indicates an increase in the tetragonal distortion, δ = 2 - c/a with temperature. An attempt is made to explain the increase in tetragonal distortion with temperature and the anisotropic thermal expansion of CuGaSn□Se₄ in terms of the thermal expansion of the A>−;Se (where A is Cu and Ga randomly distributed) and B>−;Se (where B is Sn and vacancy randomly distributed) bonds. The results are also discussed in terms of the principal Grüneisen parameters of chalcopyrite structure compounds.     

TheK-conversion coefficient near threshold of the 30 keV isomeric transition in108mAg decay

With calibrated Ge(Li) x-ray detectorsK x rays in the conversion of the 30 keV isomeric transition in the decay of^108mAg were observed in coincidence with 79 keV γ-rays. Thus, the fraction of 30 keV transitions which take place byK conversion was measured to be (2.44±0.23) × 10^?2. Making use of a theoretical total conversion coefficient (K conversion contributes only a minor part of the total conversion coefficient), an experimental value of theK-conversion coefficient was obtained, α_K=(1.07 ± 0.10) × 10⁴ (where the error represents twice the standard deviation to which the error in the detector efficiency has been added linearly). This value agrees with the theory of Hager and Seltzer forM4 conversion. The energy of the cascading γ-ray was remeasured to be 79.20 ± 0.05 keV.     

Hopping conductivity of carbynes modified under high pressures and temperatures: Galvanomagnetic and thermoelectric properties

The conductivity, thermopower, and magnetoresistance of carbynes structurally modified by heating under a high pressure are investigated in the temperature range 1.8–300 K in a magnetic field up to 70 kOe. It is shown that an increase in the synthesis temperature under pressure leads to a transition from 1D hopping conductivity to 2D and then to 3D hopping conductivity. An analysis of transport data at T ≤ 40 K makes it possible to determine the localization radius a ～ (56?140) Å of the wave function and to estimate the density of localized states _g(E _F) for various dimensions d of space: _g(E _F) ≈ 5.8 × 10⁷ eV^?1 cm^?1 (d=1), _g(E _F) ≈5×10¹⁴ eV^?1 cm ^?2 (d=2), and _g(E _F)≈1.1×10²¹ eV^?1 cm_?3 (d=3). A model for hopping conductivity and structure of carbynes is proposed on the basis of clusterization of sp ² bonds in the carbyne matrix on the nanometer scale.     

Anomalous temperature dependence of the band gap in AgGaSe2 and AgInSe2

The lowest band gaps of AgGaSe₂ and AgInSe₂ single crystals in the temperature range from 90 to 300 K were determined from photoconductivity measurements. Below (above ≈ 120 K in AgInSe₂ and ≈ 125 K in AgGaSe₂ the temperature coefficient of the band gap is +5 × 10⁻⁴ eV/K (−1.5 × 10⁻⁴ eV/K) and +1.1 × 10⁻⁴ eV/K (−4.28 × 10⁻⁴ eV/K), respectively. The positive value is explained with the lattice dilation effect being the dominant mechanism for the band gap variation at the temperatures less than ≈ 120–125 K.     

Charge transfer in TlFeS2 and TlFeSe2

The temperature dependences of the conductivity and the thermoelectric coefficient in TlFeS₂ and TlFeSe₂ samples have been investigated in the temperature range 85–400 K. The variable-range hopping conduction has been established. It is found that the density of localized states N _F near the Fermi level is 1.7×10¹⁸ and 3.3×10¹⁸ eV^?1 cm^?3, and the average hopping length R is 109 and 104 Å for TlFeS₂ and TlFeSe₂, respectively. The non-Arrhenius (activationless) behavior of the hopping conductivity is established in the temperature region T<200 K for TlFeS₂ and T<250 K for TlFeSe₂.     

Luminescence and decay times of CsI:In+

Luminescence spectra of single crystals of CsI:In⁺ excited in the A(304 nm), B(288 nm), C(268 nm) and D(257 nm) absorption bands have been studied in the temperature range 4.2–300 K. Excitation in the A band at 4.2 K gives rise to the principal emission at 2.22 eV accompanied by a partly-overlapping weak band at 2.49 eV. An additional emission band at about 2.96 eV is observed on excitation in the B, C or D bands. Yet another emission band located at 2.67 eV is excited only in the D band. The relative intensities of the bands are very sensitive to excitation wavelength as well as to temperature. The origin of all these bands is assigned in terms of a model for the relaxed excited states (RES). All the luminescence spectra were resolved into an appropriate number of skew-Gaussian components. Moments analysis leads to a value of (1.35 ± 0.02) × 10¹³ rad s^-1 for the effective frequency (ω_eff) of lattice vibrations coupled to the RES. At the lowest temperature, the radiative decay times of each of the intracenter emission bands (2.22, 2.49 and 2.96 eV) show a slow decay ( ～ 10–100 μs) and a fast decay ( ～ 10–100 ns). The 2.96 eV band, which is assigned to an emission process which is the inverse of the D-band absorption, exhibits a single decay mode ( ～ 10 μs). The intrinsic radiative decay rates (k₁, k₂), the one-phonon transition rate (K) and the second-order spin-orbit splitting (D) for the RES responsible for the principal emission are: k₁ = (6.0±-0.3)×10³ s^-1, k₂ = (1.33±-0.06)×10⁵ s^-1, K = (2.4±-0.4)×10⁷ s^-1 and D = (13.8±-0.5) cm^-1.     

The examination of the Faraday effect and location of the Cr level in Cr doped PbTe

Faraday effect, absorption coefficient and Hall effect have been examined in Cr doped PbTe single crystals. The effective masses of carriers m_F and then values of effective masses at the bottom of conductivity band m_F(0) have been calculated. It is shown that m_F in Cr doped PbTe is comparable with m_F in n-type PbTe not doped with chromium, with the same free carrier concentration, and the relative temperature variation of m_F(0) corresponds to relative variation of Eg. In the absorption spectrum the additional absorption maximum is found at the energy 0.11–0.14 eV. The long-wave side of the peak is shifted towards longer waves as the temperature is increased. Calculation shows that chromium level is located in the conduction band at ΔE = 0.11 eV in the limit T → 0, and is shifted down towards the bottom of the conduction band with a constant rate of $\text{0.8 × 10}{}^{\mathrm{?4}}\text{eV}\text{K}$ within the temperature range of 4.4–300 K and $\text{3.3 × 10}{}^{\mathrm{?4}}\text{eV}\text{K}$ within the temperature range 300–800 K.     

High resolution measurements of the line positions and strengths of the 2ν2 band of H2CO

Spectra of the 2ν₂ band of formaldehyde have been obtained with high resolution (0.035 cm^?1). Measurements were made with path lengths of 8, 16, and 24 m and at sample pressures from 0.1 to 0.3 mm Hg at room temperature (～296°K). From these data, the following constants were determined for the 2ν₂ band in wavenumber units: v₀=3471.718±0.004,A=9.3958±030013,B=1.28100±0.00024,C=1.11662±0.00024, Tbbb=-12.8±0.5×10^-6,Taabb=60±5×10^-6. The line strengths were also obtained from the data. The strengths were analyzed to determine the band strength and the rotational factors. At 296°K, the strength of the 2ν₂ band was found to be 15.5 ± 0.9 cm^?1/(cm·atm).     

Phase transition and anisotropy of thermal expansion in TlInS2

Linear expansion coefficients parallel and perpendicular to the layer plane of TlInS₂ layer crystal were measured in the temperature range 20–250 K at T { 200 K a strong anomaly in α⊥ behaviour was observed—the value of α6 increased abruptly up to the 200 × 10^?6 K^?1 due to phase transition in this crystal. It was shown that there is no anomaly in the behaviour of linear expansion coefficient α_z.dfnc;. This fact allowed to conclude that the phase transition in TlInS₂ is caused by changes in interlayer distances.     

The electrical properties of HgTe and HgSe under very high pressure

The electrical properties of HgTe and HgSe have been investigated at pressures up to 200 kbar in an octahedral apparatus. Measurements of the electrical resistivity at room temperature showed that, beyond the well-known transition from the semimetallic to semiconductive state, both become metallic, at 84 kbar and 155 kbar, respectively. The energy gap at various fixed pressures was obtained from the resistance-temperature relationships. The energy gap of semiconducting HgTe decreases monotonically with pressure, the coefficient being ?l.53 × 10^?5$\text{eV}\text{bar}$. The energy gap of HgSe is rather insensitive to pressures up to 75 kbar, above which it decreases continuously ($\text{dE}\text{dP}$ = ?1.59 × 10^?5$\text{eV}\text{bar}$) before vanishing around 150 kbar. At high pressures the temperature coefficient of the resistance in the metallic state is 3.25 ~ 4.70 × $\text{10}{}^{\mathrm{?3}}\text{deg}$ for HgTe, and 5.7 ~ 5.9 × $\text{10}{}^{\mathrm{?3}}\text{deg}$ for HgSe.     

Calculation of absorption coefficient for the ν1 band of sulfur dioxide

The absorption coefficients S/d of sulfur dioxide have been calculated for the ν₁ band for temperatures from 300 ～ 1500°K, taking the major isotopic species S³⁴O₂ into consideration. The total number of the vibrational transitions considered were 4, 10, 23, 41 and 70 for the temperatures of 300, 600, 900, 1200 and 1500°K, respectively. The vibrational energy was calculated to the second order, and the rotational energy and matrix element were calculated exactly with consideration for the asymmetry of the sulfur dioxide molecule. The line intensities greater than 1·0 × 10^-8 cm^-2 atm^-1 STP were included in the calculations. The wavenumber regions of 1000 ～ 1300 cm^-1 were divided into small intervals of Δω = 10 cm^-1 and the S/d averaged over the Δω were obtained. The S/d and some of the line intensities and positions at 300°K were compared with the experimental results of other workers and good agreement was obtained.