Electroreflectance of strontium titanate

The room temperature electroreflectance (ER) measurements for cubic SiTiO₃ are reported with particular emphasis on experimental conditions important for consistent reproducible lineshapes. This study includes for the first time a determination of the position of zero band perturbation (flatband) by making use of the even field nature of the ER lineshapes. The ER spectra are dependent upon dc bias, indicating the importance of a knowledge of the flatband position. A Kramers-Kronig analysis is performed and the lineshapes are reported in terms of ΔR/R, Δε₁ and Δε₂. The results in terms of Δε₂ show that the strongest direct transition occurs near 3.8 eV. The weak structure in the 3.4 eV region is due to either indirect transitions or weak direct transitions. Our unpolarized flatband ER spectra give rise to structures which for (110) samples are resolved into contributions from [001] and [12̄10] polarized spectra. In addition to the large oscillations observed above the band gap, weaker oscillatory structure is observed in the range 1.5 to 2.8 eV in the polarized spectra of (110) faced samples. The oscillations for [11̄0] polarization are 180° out of phase with those for [001] polarization.     

Infrared modulated reflectance spectra of n and p type gallium antimonide and n type indium antimonide

We have observed the modulated reflectance spectra of n and p type GaSb at 300, 80, and 5 K from 0.56 to 2 eV. The modulated reflectance of intrinsic n type InSb was measured at 80 K from 0.2 to 2 eV. The “dry sandwich” vapor deposition technique was used to make the electroreflectance (ER) samples. The low-temperature spectrum of the undoped p type GaSb sample shows three peaks at the band edge that could be associated with transitions from the top of the valence band, the light (0.903 eV) and heavy (1.014eV) hole state Fermi levels to the conduction band. The energies of the observed peaks are in agreement with the Fermi level determination from Hall effect and Faraday rotation measurements. This modulation mechanism is based on band population effects. The ER signal of InSb under flatband condition at 80 K has five half oscillations at the direct band gap. The contribution of piezoelectric strain to ER is present since the dc bias required to achieve flatband condition is different at the band gap than at E₁. The ER signal corresponding to the direct gap energy E₀ and to the spin-orbit energy E₀ + Δ₀ was determined in the n and p type samples of GaSb at different temperatures. We have measured the intrinsic energy gap in GaSb at room temperature. E_g = 0.74 eV. The corresponding spin-orbit splitting was found to be Δ₀ = 0.733 ± 0.002 eV.     

Disorder broadening of E2 optical spectra in GeSi alloys

he E₂ transitions in GeSi alloys are analyzed quantitatively using low-field electroreflectance data. The model of M₁ saddle point transitions is found to be in fair agreement with differentiated electroreflectance spectra in the whole composttion range. The broadening parameter of pure Ge and Si increases by 0.035 eV in the alloy with equal content of both components.     

Observation of exciton quenching in GaAs at room temperature using electrolyte electroreflectance

We have observed pronounced excitonic effects at room temperature near the E₀ transition (direct gap at k = 0) of GaAs, using the electrolyte electroreflectance technique. The large changes in the spectral lineshape are interference phenomena due to exciton quenching in the high electric fields of the space charge region. Support for this model is provided by an analysis of the lineshape variation, which is periodic in the width of the space charge region.     

Raman E 1, E 1+Δ1 resonance in unstrained germanium quantum dots

Raman scattering by optical phonons in unstrained Ge quantum dots obtained in GaAs/ZnSe/Ge/ZnSe structures was studied using molecular beam epitaxy. A shift in the E ₁, E ₁+Δ1 resonance energy due to the quantization of the spectrum of electron and hole states in quantum dots was observed. The properties observed were explained with the use of a simplest model of localization with allowance for the spectrum of Ge electron states.     

The effect of fast neutron irradiation on the optical modulation spectra of GaAs

The electroreflectance and wavelength-modulated reflectance spectra of GaAs were measured before and after several reactor irradiation periods. High resistivity n type GaAs crystals were irradiated at a temperature between 300 and 310 K up to a fast neutron fluence of 3.3 × 10¹⁷n/cm². The E₀ and E₀+Δ_o peaks shift nonlinearly toward lower energy, the change reaching a maximum value of about ? 50 meV at 10¹⁷n/cm². At this fluence an additional peak appears at 1.33 eV. The E₁ and E₁+Δ₁ peaks move almost linearly toward higher energy with increasing fast neutron fluence, the shift being about + 25 meV at 2 × 10¹⁷n/cm². The results are discussed taking into account infrared absorption measurements and the calculations made by McNichols, Hayes and Ginell concerning the metallic GaAs precipitates. The effect of possible internal stress produced by the fast neutron bombardment on the modulation spectra is also discussed.     

Reflectance modulation in HgTe

Three kinds of modulation techniques, electroreflectance, thermoreflectance and piezo-reflectance are employed to determine energy band parameters in HgTe in the range of photon energy 0.5 to 4 eV. The value of the spin-orbit splitting Δ₀ is determined to be 1.08 ± 0.02 eV from the measurement of electroreflectance with the use of the electrolyte technique and is assigned with the help of electroreflectance measurement on Cd_xHg_1?xTe alloys. In thermoreflectance and piezoreflectance near E₁, various information is obtained, such as broadening parameters, the energy gaps, the location of the transition edge and the ratios of deformation potential constants D₁⁵/D₁¹ = ? 1.4 ± 0.5 and D₃⁵/D₃³= 2.3 ± 0.8 at room temperature.     

Relative Raman cross sections and deformation potentials of several semiconductors at the E1 resonance

The relative cross sections for one-phonon scattering at the E₁ resonance have been measured for several cubic semiconductors. Using the dielectric theory of the Raman tensor and the values of the real and imaginary parts of the dielectric constant determined from optical measurements we are able to obtain relative values for the intraband deformation potential of the valence bands d⁵_3,0. Taking d⁵_3,0 = 1 for Ge we find the values 2.4, 1.0, 0.42, 0.64 and 1.1 for Si, GaAs, Mg₂Si, Mg₂Ge, and Mg₂Sn, respectively.     

Raman E 1 and E 1 + Δ1 resonances in a system of unstrained germanium quantum dots

The positions and shapes of the Raman E ₁ and E ₁ + Δ₁ resonances of optical phonons are studied as functions of the size of unstrained germanium quantum dots. The quantum dots are grown by molecular-beam epitaxy in GaAs/ZnSe/Ge/ZnSe structures on GaAs(111) wafers. The positions of the E ₁ and E ₁ + Δ₁ resonances are found to shift by at most 0.3 eV. This shift is shown to be well described in terms of a cylindrical model using the quantization of the spectrum of bulk electron-hole states in germanium that form an exciton in a two-dimensional critical point. The fact that the peaks of the E ₁ and E ₁ + Δ₁ resonances appear separately has been detected for the first time, and it is related to the transformation of the interband density of states into a delta function because of spectrum quantization. An increase in the resonance amplitudes in quantum dots as compared to the bulk case is related to the degeneracy multiplicity of the exciton state in the (111) direction.     

High-resolution electroreflectance measurements of GaAs

High-resolution surface-barrier electroreflectance measurements are reported for GaAs, taken at 4.2 K in the Schottky barrier configuration. Interference effects between the bulk and space-charge regions are seen at the n = 1 exciton line for both E₀ and E₀ + Δ₀ transitions. We calculate the value μ_T = (0.055 ± 0.008) m_e for the transverse mass of the E₁ + Δ₁ transition from Franz-Keldysh oscillations observed at high fields. The E'₀ structure is resolved into separate critical points of Γ and Δ symmetry. Threshold and broadening energies are obtained at 4.2 K for the E₀,E₀, E₀ + Δ₀, E₁, E₁ + Δ₁, E'₀ (Γ and and E₂ (Σ and X) critical points.     

Comparison of site-specific valence band densities of states determined from Auger spectra and XPS-determined valence band spectra in GeS (001) and GeSe (001)

Auger lineshapes of the Ge M₁M_4,5V and M₃M_4,5V and Se _M1M_4,5V transitions in GeS (001) and GeSe (001) are measured and compared to XPS valence band spectra. Distortions in both types of spectra due to inelastic scattering, analyzer and source broadening, and core level lifetime broadening are removed by deconvolution techniques. The valence band consists of three main peaks at ?2 eV, ?8 eV, and ?13 eV. There is excellent agreement of peak positions in AES and XPS spectra. The Auger lineshapes can be interpreted in terms of site-specific densities of states. They indicate that the states at ～?8 eV and at ～?13 eV are associated with the cation and anion sites respectively. The bonding p-like states at the top of the valence band have both cation and anion character. The Auger lineshapes indicate that the states closest to the valence band maximum are preferentially associated with Ge.     

Band structure of GaxIn1−xP alloys

An example of a systematic study of band structrue of alloys by electroreflectance technique is presented. Preliminary experimental analysis of lineshape convinced us of the good fitting of the three points method at room temperature. Electroreflectance spectra were measured at room temperature in the whole range of composition. The variations of E₀, E₁, E'₀, E₂ energies with composition are reported and compared with results of band structure calculation by the dielectric two bands method including the effect of disorder. The Γ-X crossover point is accurately determined. Inversely, electroreflectance technique is shown to be an interesting method for determining the composition of the alloys and to control macroscopic homogeneity.     

Optical anisotropy of orthorhombic InS

The optical anisotropy of InS single crystals in the range of photon energy from 1.8 to 3.5 eV has been studied by absorption, electroreflectance and wavelength-derivative reflectance measurements. These systematic optical measurements for the polarizations, E//a and E//b, have revealed that the transition at the fundamental absorption edge of InS is allowed for E//b, and there exist three distinct doublet transitions having different selection rules in the photon energy region from 2 to 3.5 eV; Bo and B^'₀doublet allowed only for E//b, A₀ and A^'₀ allowed only for E//a, and E₁ and E^'₁ allowed for both polarizations. The observed results are discussed based on the anisotropic nature of two chemical bonds in InS, cation-cation and cation-anion.     

Raman tensor of germanium and zincblende-type semiconductors

It is shown that the one-phonon Raman tensor of germanium and zincblende-type materials can be calculated from a model density of states consisting only of the E₀ and the E₀ + Δ₀ parabolic critical points. The calculated Raman tensors and their spectral dependence are compared with experimental results for GaP, GaAs, and ZnSe and with a recent calculation for Ge based on the complete band structure.     

Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=E_g(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.     

Fundamental absorption of AgGaS2 single crystals and thin polycrystalline films

AgGaS₂ single crystals show an absorption edge at 300 K which follows Urbach's rule for both directions of polarized light, parallel and vertical to the optical c-axis. The UV absorption curve of a polycrystalline thin film exhibited several maxima at photon energies which are in good agreement with previous results on optical reflectance and electroreflectance measurements.     

Electroreflectance in GeSi alloys under hydrostatic pressure

From the electroreflectance spectra measured under hydrostatic pressure to 7 kbar we have determined the pressure coefficients for germanium (dE₁/dP = 7.8 ± 0.4⁻⁶eV/bar, dP = 1.4 ± 0.8 10⁻⁶eV/bar), for Si (dE′_o/dP = 1 ± 1 10⁻⁶eV/bar, dE₁dP = 6.2 ± 0.4 10⁻⁶eV/bar) and for GeSi alloys in the entire composition region. For the composition 80–100% of Si which is widely discussed in the literature, we could distinguish two maxima with substantially different pressure coefficients. The absolute experimental values of dE/dP agree rather well with theoretical values which, together with composition shift of electroreflectance peaks, enable us to connect the peak E₁ predominantly with λ and L and E′_o with Г and Δ transitions in the entire composition region.     

Far infrared absorption of amorphous GaAs and Ge

Far infrared reflection spectra of amorphous GaAs and Ge have been obtained in the frequency region from 30–600 cm^?1. For each material, curves of ω?₂ vs frequency have been obtained whose corresponding reflectivity curves give a best fit to the data. The peak value of the abdorption coefficient is about 4000 cm^?1 for GaAs and 160 cm^?1 for Ge. The results are compared with Raman spectra and with theoretical calculations.     

Electroreflectance of bound excitonic states in semiconductors

While first-derivative spectroscopy (thermoreflectance, piezoreflectance, wavelength derivative modulation) has a general validity, no matter whether one is studying interband or excitonic transitions (involving also bound states), things are more complex in the case of electroreflectance (ER). As a matter of fact, Aspnes and Rowe's third-derivative theory does not include bound excitonic states. Using a phenomenological approach one can see that only in the case of a strong mixing between d³ε_r/dE³ and d³ε₁/dE³ it is possible to observe a qualitative agreement between Δε and d³ε/dE³ in some particular cases where Wannier excitonic series gives a predominant contribution to the optical spectra.     

Light emission at the E1 and E1+Δ1 gaps in heavily doped p-type Ge and GaAs

We report the observation in heavily doped p-type germanium (N_h ≥ 10¹⁸cm^?3) of two weak light emission bands centered at the energies of the E₁ and E₁+Δ₁ interband gaps (2.22 and 2.42 eV at 80 K). These bands, which are 100% polarized, are found only for excitation with laser frequencies slightly above the gaps. We attribute them to photon scattering by inter-valence-band excitations of the holes associated with the heavy doping. The fact that the emission bands do not shift with the exciting laser frequency is assigned to a strong resonance enhancement of this scattering near the E₁ and E₁+Δ₁ gaps. We have also observed the corresponding light emission at the E₁ gap (3.0 eV) in p-type GaAs.