Modell einer Schraubenversetzung in piezoelektrischen Kristallen. I Allgemeine Theorie

Due to the piezoelectric effect, dislocations in piezoelectric crystals carry electrical fields and (or) charges, which can be quite large locally. The properties of a 〈001〉-screw dislocation in a cubic crystal are investigated in detail. In the present first part, two limiting cases are treated, using the following suppositions: 1. No free charge carriers are present; the occurring electric field and the proper potential field are studied; 2. The electric field is negligible small; the charge density of the free charge carriers is examined. Numerical values for ZnS and GaAs, which are of technical importance, are calculated and discussed. For the depths of the flat potential valleys around the 〈001〉-dislocations, we obtained the values:ΔE=0,082 eV (ZnS) andΔE=0,049 eV (GaAs).     

Effect of magnetic field on the polarization of LiF crystals during microindentation

The polarization and depolarization processes in a LiF crystal during indentation after exposure to a dc magnetic field (B = 0.9 T, t = 30 min) have been studied. It has been shown that the potential difference appearing due to movement of charged dislocations in the exposed crystal increases more than two-fold as compared to the initial sample, and the subsequent charge equilibrium in the samples is established approximately 1.5 times faster. These developments demonstrate significant increase in the concentration of free cation vacancies due to action of a magnetic field.     

Electro-optical transitions in a semiconductor cylindrical nanolayer

The single-electron states in a quantized cylindrical layer have been considered in the presence of a moderate homogeneous electric field, when the energy imparted to a charge carrier by the electric field becomes comparable to the energy of rotational motion of this particle. The corresponding energy spectrum and the envelopes of the wave functions of charge carriers in the layer have been obtained in an explicit form. The electro-optical absorption band of a weak electromagnetic wave has been calculated. It has been found that the absorption intensity increases with an increase in the intensity of the electric field. The external electric field leads to an explicit dependence of the absorption intensity on the effective masses of charge carriers. The absorption intensity decreases as the difference between the effective masses of charge carriers increases. There is also an effective broadening of the band gap, which is determined by the geometrical dimensions of the sample and the magnitude of the external field.     

Modell einer Schraubenversetzung in piezoelektrischen Kristallen. II Elektrisches Feld und Ladungsverteilung für eine Versetzung in einem Eigenhalbleiter im thermischen Gleichgewicht

The electric potential field occurring on dislocations in piezoelectric intrinsic semiconductors due to the piezoelectric effect is described, in the case of thermal equilibrium, by a quasi-linear partial elliptic differential equation. In most cases, already the linearized form of this differential equation yields solutions of sufficient accuracy. Closed expressions for the electric field and for the density? of free charge carriers are derived from this potential. As in part I explicit solutions are given and discussed in detail for a 〈001〉-screw dislocation in cubic crystals. — For ZnS and GaAs the proper numerical values are calculated.     

Principles of Adaptive Optics, 3rd edn., by Robert K. Tyson

A review is made of the quantum effects which are observed in the transport coefficients of semiconductors. Quantization of the free carriers in semiconductors is produced whenever an external potential acts on an otherwise uniform and perfect crystal. Typical examples are a magnetic field, an electric field or the physical boundaries of the sample. A magnetic field quantizes the electron and hole states into a ladder of equally spaced Landau levels. This gives rise to the Shubnikov–de Haas, magnetophonon and magneto-impurity effects, where the positions of the Landau levels resonate with the Fermi, phonon, or impurity energies present in the sample. A series of oscillations in the magneto-resistance of many different types of materials results. Electric fields applied to the surface of metal oxide semiconductor (MOS) devices result in a set of quantum levels for motion perpendicular to the surface. At low temperatures the charge carriers are bound to the surface and behave as if they were two-dimensional. This is shown to give rise to very dramatic oscillatory metal–insulator behaviour in high magnetic fields. Quantization is also shown to occur in very thin layers of semiconductors which act like a simple square well potential, the energy levels of which can be studied as a function of layer thickness. The carriers are confined within the layers, and also show two-dimensional behaviour.     

On the effective cross-section for recombination of free carriers with dipole centres

An approximate calculation of the effective cross-section for recombination δ_eff of free charge carriers with dipole centres for small mean path lenght l of free carriers and not very small gas-kinetical cross-section of recombination σ_k is conducted. A formula for the σ_eff suitable also for larger l and small σ_k is suggested.     

Interpretation of anomalous normal state optical conductivity of La-Sr-CuO cuprates

The observed frequency dependent optical response of hole doped cuprate La_1.85Sr_0.15CuO₄ superconductors, has been theoretically analysed. Starting from an effective two-dimensional (2D) interaction potential for superlattice of hole doped cuprates treated as a layered electron gas, the spectral function is formulated. Calculations of the optical conductivity σ(ω) have been made within the two-component scheme: one is the coherent Drude carriers responsible for superconductivity and the other is incoherent motion of carriers from one site to other leads to a pairing between Drude carriers. The approach accounts for the anomalies reported (frequency dependence of optical conductivity) in the optical measurements for the normal state. Estimating the effective mass from specific heat measurement and ε_∞ from band structure calculations for the low-energy charge density waves, the model has only one free parameter, the relaxation rate. The frequency dependent relaxation rates are expressed in terms of memory functions, and the coherent Drude carriers from the effective interaction potential lead to a sharp peak at zero frequency and a long tail at higher frequencies, i.e. in the infrared (IR) region. However, the hopping of carriers from one site to other (incoherent motion of doped carriers) yields a peak value in the optical conductivity centred at mid-IR (MIR) region. We find that both the Drude and hopping carriers in the superlattice of cuprates will contribute to the optical process of conduction in the CuO₂ planes and shows similar results on optical conductivity in the MIR as well as IR frequency regions as those revealed from experiments.     

Contact effects on the magnetoresistance of finite semiconductors

We propose a new theoretical method to study galvanomagnetic effects in bounded semiconductors. The general idea of this method is as follows. We consider the electron temperature distribution and the electric potential as consisting of two terms, one of which represents the regular solution of the energy balance equation obtained from the Boltzmann transport equation at steady-state conditions and the Maxwell equation, while the other is the effect of the specimen size that is significant near the contacts (the boundary layer function). With the distribution of the electric potential at the contacts and the electron temperature distribution at the surface of the sample taken into account, we find that the magnetoresistance is different from the one in the standard theory of galvanomagnetic effects in boundless media. We show that, besides the usual quadratic dependence on the applied magnetic field B, the magnetoresistance can exhibit a linear dependence on B under certain conditions. We obtain new formulas for the linear and quadratic terms of the magnetoresistance in bounded semiconductors. This linear contribution of the magnetic field to the magnetoresistance is essentially due to the spatial dependence of the potential at the electric contacts. We also discuss the possibility of obtaining the distribution of the electric potential at the contacts from standard magnetoresistance experiments. Because the applied magnetic field acts differently on carriers with different mobilities, a redistribution of the electron energy occurs in the sample and thus, the Ettingshausen effect on the magnetoresistance must be considered in bounded semiconductors.     

An analysis of the effect of nitrogen and a screened (by free carriers) Coulomb field on the binding energy of hydrogenic shallow donors in GaInAsN

The effect of nitrogen concentration on the screening with free carriers and binding energy of hydrogenic shallow donors in GaInAsN alloys is investigated. The binding energy is calculated using a novel algebraic model which was proposed recently by Gönül et al. (2006) [16], in order to find an analytical solution to the screened Coulomb potential. The results show that the nitrogen concentration is a strong factor in producing a screening field of free carriers and in affecting the binding energy of hydrogenic shallow donors.     

Ionization of helium-like ions with excitation of nl states by high-energy photon scattering

The kinetic and spectral characteristics of the complex dielectric constant of a Ce: YAG crystal under laser irradiation in 250–275 nm spectral range are investigated. The lifetimes of free charge carriers and charge carriers, localized at the lattice defects (color centers), are estimated. It was established that photoconductivity signal of the sample is essentially caused by one-photon ionization processes from the ² F _5/2 ground state of Ce³⁺ ions.     

The low field Hall-effect of poly-valent metals in the nearly free electron approximation. I: Al,In and Pb

The formula by Tsuji for the low field Hall-coefficient is applied for tri- and tetra-valent metals in thefcc structure. Under the assumption of sufficient small pseudopotential the evaluation of the Tsuji formula is rather simple. The Fermi-surface can be divided into different parts; the free electron sphere and the ring shaped distorted parts at the intersection circles with the Bragg-planes. The latter represent electron-like and hole-like carriers; the Bragg-particles. The actual Hall coefficient is a sum of the free electron Hall-coefficientR _o and the contribution of the Bragg-particles. The latter is of the same order of magnitude asR _o. Its sign depends on the actual scattering potential and on the sign of the pseudopotential. A successful comparison with experimental results for Al, In and Pb is given for impurity scattering. thermal scattering and temperature dependence. A measurement of the Hall-effect under pressure is suggested to prove the dominant role of the sign of the pseudopotential for the Hall-effect.     

Effect of free carrier screening on the binding energy of D− centers in polar semiconductors

A calculation of the binding energy of a D^? center, defined as the energy required to remove one of the two electrons from the D^? center to infinity, in the presence of other free carriers is reported in polar crystals. It is assumed that the effective interaction between each of the two electrons and the positive ion is described by Thomas-Fermi potential. The effective interaction between the two electrons in polar crystals is, however, described by two recently proposed potentials. The binding energy of a D^? ion is calculated variationally in several polar crystals as a function of the screening parameter δ and the value of δ at which the binding energy goes to zero (D^? Mott transition) is determined. A possible experimental situations where this system may be studied is discussed.     

低场低能区金刚石内载流子飞行时间的蒙特卡洛模拟

金刚石是一种重要的宽禁带半导体材料,对金刚石内载流子输运过程的研究将有助于了解金刚石用作各种电子器件的潜能。利用Monte Carlo模拟方法,研究了在低场低能区金刚石内载流子的飞行时间。在模拟中考虑了抛物线型能带模型和声学声子散射机制,以及样品对光的吸收和载流子在Brillouin区边界的Bragg反射。通过模拟,得到了低场低能区金刚石材料内载流子的飞行时间分布,并与相关的实验结果进行了比较分析,验证了该模拟模型的正确性。研究结果表明,在低场低能区,金刚石材料内主要的散射机制是声学声子散射。在研究金刚石材料内载流子的迁移输运问题时,可以采用较为简单的抛物线型能带模型,但在研究薄样品中的载流子输运时应当考虑材料的光吸收对初始载流子分布的影响,而且在场强较高以及样品厚度较大时,应当考虑载流子在Brillouin区边界的Bragg反射。     

Rate constant of capture of electron charge carriers on a screened repulsive center

The rate constant of capture of electron charge carriers on a screened repulsive center are performed. Approximate expressions for the potential barrier width, the capture cross section, and rate constant are derived. It is shown that the increase in the concentration of free charge carriers in silver azide from 10¹⁶ to 10²⁰ cm^?3 results in an increase in the capture rate constant by four orders of magnitude. It is also shown that, with increasing concentration of free carriers, the temperature dependence of the rate constant weakens and the effective activation energy of capture in silver azide decreases from 0.18 to 0.01 eV.     

Direct measurement of free carrier nonlinearity in semiconductor-doped glass with picosecond pump-probe Z-scan experiment

We report the direct measurement of free carrier nonlinearity in a semiconductor-doped glass with picosecond pump-probe Z-scan experiment. A strong Z-scan signal from a weak and time delayed probe beam is observed. The probe beam Z-scan signal is comparable in magnitude to the Z-scan signal of the intense pump beam, clearly showing the dominance of the effective fifth order nonlinearity due to the pump beam generated free carriers in the overall nonlinear response of semiconductor-doped glass. The estimated magnitude of the fifth order nonlinearity is consistent with that obtained from earlier reported experiments.     

Reversibler Gleichfeld- und Mikrowellen-Durchschlag in n-Typ-Germanium bei 4,2 °K

The microwave induced breakdown characteristic inn-type germanium at 4.2 °K has been observed and compared with the d.c. induced breakdown characteristic obtained from the same sample. The effective microwave breakdown field intensity is nearly equal to the field intensity observed in d.c. induced breakdown. However, in the breakdown region with conductivities greater than 0.1 ohm^?1 cm^?1 a relaxation effect was found and interpreted qualitatively as momentun relaxation. In the initial breakdown the relaxation time τ _m is small,ω ²τ _m ² being ?1 whereω/2π=9·10⁹s^?1 is the microwave frequency. The relaxation time is determined by predominant neutral impurity scattering with at last 5·10¹⁴ impurities per cm³. This scattering mechanism becomes ineffective when the impurities are ionized by hot carriers. Ionized impurity scattering or acoustic phonon scattering will then be predominant with increased and energy dependent values of τ _m . The increased phase shift between carriers and field causes a decreased energy transfer from the field to the carriers, an accordingly smaller ionization rate, and finally results in a nearly constant a.c. conductivity. The observed anisotropy of the breakdown field intensity is in qualitative agreement with the assumption that only carriers in “hot” valleys of the conduction band initiate the breakdown by impact ionization. The unsufficient quantitative agreement may be due to an inhomogeneity of doping which is suggested by comparing the values of the ohmic low temperature conductivity of the samples.     

The semi-classical hopping model of the electrical conductivity of semiconductors

A model of localized carriers moving in a hopping manner from one crystallographic point to a neighbouring one is the starting point for the model presented here for the electrical conductivity in semiconductors. An effort is made to link this hopping type of motion of carriers with their mean uniform motion in the crystal. With an assumed shape for the potential barrier for a single hop of a carrier, the model permits the calculation of the effective mass, the mobility of a carrier with energy E, the mean mobility of all carriers in the band, and the electrical conductivity as a function of temperature, T. The model is presented and exemplified by a one-dimensional system.     

Effect of a magnetic field on the I – V characteristics of a germanium-electrolyte interface

A study has been made of the effect of the magnetic field on the I–V dependences (the so-called polarization curves) of an (n-Ge)-electrolyte interface and on the Ge electrode potential during anodic polarization. It is shown that the magnetic field shifts the saturation current toward lower currents and sharply increases the Ge surface potential in the current region. This is due to the effect of the magnetic field on the polarization current in the sample, which is governed by the diffusive flux of minority carriers. The shift of the breakdown region toward higher potentials in a magnetic field is evidence of impact-ionization multiplication of minority current carriers in the field of the Ge surface barrier.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol.12, No. 3, pp. 99–103, March, 1969.The authors thank A. A. Lebedev for interest in the study and comments.     

Computational screening of vdWs heterostructures of BSe with MoSe2 and WSe2 as sustainable hydrogen production materials

Recently, fabricating type-II vertical van der Waals (vdWs) heterostructure is a promising material for hydrogen production. The absorption capability, charge density distributions, band alignments and electronic properties of the monolayers and heterostructures are systematically investigated using computational studies. Using ab initio molecular dynamics, binding energy and phonon calculations, the stability of the heterostructures are verified. Both heterostructures are type-II materials, which can increase the separation of charge carriers. Moreover, the charge density difference and the potential drop across the interface of MSe₂/BSe creates a high built-in electric field that can prevent the recombination of charge carriers. We found that the visible-light optical properties of both heterostructures are much enhanced with suitable bandgap energy for water splitting. The band alignment suggests that the heterostructures straddle water redox potentials in acid solutions (0 < pH < 7). Our study predicted that MSe₂/BSe vdW heterostructures have great potential for photocatalytic hydrogen production.     

Influence of screening on deformation potential and piezoelectric scattering in doped semiconductors

Mobility relations are derived for deformation potential and piezoelectric scattering accounting for the screening by free charge carriers. Estimations of the screening influence on the carrier mobility in n-type GaN and p-type GaAs are made. It is shown that particularly in p-type GaAs the screening effect cannot be neglected in analysing the hole mobility even at high carrier concentrations.