Spin-flip Raman scattering from electrons in localized donor states in n-InSb

We report the first observation of spin-flip Raman scattering from electrons localized in shallow donor states in InSb. For a non-degenerate n-InSb sample (8×10¹³ cm^-3) measurements of the spin-flip Raman gain and the effective g-value as a function of the magnetic field show lineshapes and magnetic field dependences completely different to that of an InSb sample with the electron gas being in a degenerate regime (1.35×10¹⁵ cm^-3). For the 8×10¹³ cm^-3 InSb sample, at magnetic fields greater than 11.5 kG, a splitting of the spin-flip Raman line into two lines is observed which may be an indication that two shallow donor states with different effective g-values are concerned.     

Surface photovoltage measurement in MOS structures

A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E _t ¹ = E_v + 0.25 eV and E _t ² = E_c – 0.30 eV in the oxide-silicon interface of the investigated structures had been found.     

p型锑化铟中的噪声

测量了几个高纯的p型InSb样品在液氮温度下的噪声频谱,一般由产生复合噪声及调制噪声组成,前者与热平衡载流子浓度p₀的二次方成反比,后者与p₀成反比。因此,材料愈纯,产生复合噪声所占的比重就愈大。产生复合噪声的数值与频谱与已有的理论符合。由此频谱可确定多数载流子寿命τ,得到τp₀≈1.1×1O⁹秒/厘米³,并给予理论解释。     

The effective mass of electrons in the intrinsic region of InSb

The effective masses of electrons m _n /m _o in the intrinsic region are calculated on the basis of measurements of the temperature dependence of the total magnetic susceptibility and the Hall coefficient of single-crystal and polycrystalline specimens of n- and p-type InSb. It is shown that the effective masses m _n /m _o are constant in the range considered and their values for the various specimens are 3·43×10^–2 to 3·53×10^–2.     

Surface photovoltage spectroscopy and surface piezoelectric effect in GaAs

“Real” (111) surfaces of n-type GaAs were investigated employing surface photovoltage spectroscopy and the surface piezoelectric effect. Surface states at the energy position E_c ? E_t ? 0.72 eV were found on both the Ga and the As surfaces. Both types of surfaces exhibited a barrier of about 0.55 V. No variations in the surface barrier or the energy position of the surface states were observed in various ambients at atmospheric pressure (dry air, wet air, ammonia and ozone). However, the capture cross-section of the surface states for electrons, as determined from the surface piezoelectric effect transients (of the order of 10^?13 cm²), was found to be sensitive to the ambient. It decreased in wet air and increased in ozone. This effect was more pronounced on the As than on the Ga surfaces. Additional surface states were found to be present in the energy region of 0.9 to 1.0 eV, below the bottom of the conduction band. However, their exact energy positions could not be determined due to interference caused by the carrier trapping of the surface states at E_c ? E_t ? 0.72 eV.     

Galvanomagnetic measurements on n- and p-type α-tin electron-irradiated at 5 K

Galvanomagnetic measurements were obtained for pure and doped n- and p-type α-tin filaments irradiated by 1 MeV electrons at ～ 5 K. Variations in the Hall coefficient for highly degenerate samples were in qualitative agreement with theory. Carrier removal rates are reported; changes in these as a function of the initial position of the Fermi level indicate the presence of donor defect sites near E_F = 0 and acceptor defect sites deeper in the valence band. Isochronal annealing data have been obtained.     

流体静压力对InSb输运性质的影响

在室温和流体静压力达12500公斤/厘米²下,测量了不同掺杂浓度的n型(5×10¹³—2.3×10¹⁸厘米^-3和p型(2.6×10¹⁴—6.0×10¹⁷厘米^-3)InSb的霍耳系数和电导率。分析结果发现,霍耳系数公式中散射因子随压力而减小,禁带宽的压力系数不是常数;得出禁带宽、载流子浓度、电子和空穴迁移率与压力的关系,并对压力下的载流子散射机构作了初步讨论。     

锑化铟中载流子的复合过程

用定态光电导及光磁电的方法测量了p型n型InSb在85—290°K之间的电子及空穴的寿命。在室温附近,所有样品的截流子寿命都趋于同一值,在290°K时为3×10^-8秒。从寿命的绝对值及温度依赖关系,以及掺杂对寿命的影响,可以肯定在室温附近起主要作用的复合过程是带间碰撞复合过程。在200°K以下,p型样品中的电子寿命与空穴寿命有很大差别,表明有陷阱作用。用位于价带之上0.05eV的复合中心及位于导带之下0.11eV的电子陷阱能完满地解释200°K以下的寿命与温度的依赖关系。     

Contact potential measurements on “clean” CdS surfaces

Contact potential difference (cpd) measurements were carried out on {112̄} surfaces of high conductivity CdS cleaved in ultrahigh vacuum. A modified Kelvin method was employed. A change in cpd upon illumination with white light (surface photovoltage) was observed, indicating the presence of intrinsic surface states in these surfaces. Long exposure (about 24 hr) to water vapor (2 × 10⁻⁸ torr) caused an increase of about 1.0 V in cpd and a reduction in surface photovoltage. This increase in cpd was attributed primarily to a decrease in the electron affinity of the surfaces brought about by the molecular dipole moment of physically adsorbed water molecules. The “clean” surfaces exhibited no appreciable affinitity for spectroscopically pure oxygen, except under white light illumination apparently due to the increase of the density free electrons at the surface.     

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R₀A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 10⁴ Ω/cm², and the average value of R₀A was 1.66 × 10⁴ Ω/cm². The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.     

Response functions for surface polaritons at interfaces in solids

Surface excitations of phonon and plasmon character are reviewed and discussed using the electric field response function. Calculations of the surface mode dispersion curves are exhibited for InSb for carrier concentrations in the 1 to 6 × 10¹⁷ cm^?3 range. Some comparisons are made with the reflectivity data of Anderson et al. which confirm the presence of a damaged layer on their InSb samples.     

Study on the mechanisms of photoinduced carriers separation and recombination for Fe-TiO2 photocatalysts

The iron(III)-ion doped TiO₂ (Fe³⁺-TiO₂) with different doping Fe³⁺ content were prepared via a sol-gel method. The as-prepared Fe³⁺-TiO₂ nanoparticles were investigated by means of surface photovoltage spectroscopy (SPS), field-induced surface photovoltage spectroscopy (FISPS), and the photoelectrochemical properties of Fe³⁺-TiO₂ catalysts with different Fe³⁺ content are performed by electrical impedance spectroscopy (EIS) as well as photocatalytic degradation of RhB are studied under illuminating. Based on the experiment results, the mechanism of photoinduced carriers separation and recombination of Fe³⁺-TiO₂ was revealed: that is, the Fe³⁺ captures the photoinduced electrons, inhibiting the recombination of photoinduced electron-hole pairs, this favors to the photocatalytic reaction at low doping concentration (Fe/Ti ≤ 0.03 mol%); while Fe³⁺ dopant content exceeds 0.03 mol%, Fe₂O₃ became the recombination centers of photoinduced electrons and holes because of that the interaction of Fe₂O₃ with TiO₂ leads to that the photoinduced electrons and holes of TiO₂ transfer to Fe₂O₃ and recombine quickly, which is unfavorable to the photocatalytic reaction.     

The trap-limited diffusivity of electrons in nanoporous semiconductor networks permeated with a conductive phase

The transport of photogenerated electrons in nanocrystalline semiconductor networks permeated with a conducting phase is studied, with a particular emphasis on dye-sensitized nanoporous TiO₂ solar cells. We extend the classical approach to the trap-limited mobility according to specific features of the nanoporous configuration: electron transport by diffusion, the capacitive behavior of the nanoporous film and the possible bandshifts due to the charging of surface states. We show that the trap-limited diffusivity, as measured by small-signal techniques, is proportional to the ratio of the conduction-band capacitance and the trap capacitance. These capacitances are defined in terms of a pseudopotential related to the chemical energy of the free electrons, in order to account for possible band unpinning. Several specific distributions of bandgap states are investigated. The dependence of the trap capacitance on the number of free electrons takes the general form C_trap=An^1-a, where 0a1 depends on the distribution of the traps. The trap-limited diffusivity depends on the number of free electrons as D_n=Bn^a, and D_n also shows a power-law dependence with the light intensity. We describe the correlation of the electron conductivity with the photovoltage in the solar cell and the photon irradiation intensity. PACS 81.07.Bc; 73.30.+y     

Characterization of nanocrystalline SnO2 thin film fabricated by electrodeposition method for dye-sensitized solar cell application

Nanocrystalline SnO₂ thin film was prepared by cathodic electrodeposition-anodic oxidation and its structure was characterized by X-ray diffraction, SEM, UV-visible absorption and nitrogen adsorption-desorption by BET method. The obtained film has a surface area of 137.9 m²/g with grain sized of 24 nm. Thus the prepared SnO₂ thin film can be applied as an electrode in dye-sensitized solar cell. The SnO₂ electrode was successfully sensitized by Erythrosin dye and photoelectrochemical measurements indicate that the cell present short-circuit photocurrent (J_sc) of 760 μA/cm², fill factor (FF = 0.4), photovoltage (V_oc = 0.21 V) and overall conversion efficiency (η) of 0.06% under direct sun light illumination. The relatively low fill factor and photovoltage are attributed to the reduction of triodiode by conduction band electrons and intrinsic properties of SnO₂.     

Surface photovoltage for real n- and p-type in the visible and near spectroscopy (110) CdTe surfaces infra-red spectral range

Surface photovoltage spectroscopy has been carried out on real n- and p-type (110) CdTe surfaces in the wavelength range 0.36-1 μm at room temperature (300 K), and at atmospheric pressure. The measurements show the existence of surface states at 1.3; 1.48, and 1.2; 1.46 eV within the energy gap of n- and p-type CdTe, respectively. Surface states greater than the energy gap at 2.24, 2.38, 2.68, and 3.1 eV have also been detected in n-type samples and at 1.66, 2.12, 2.69 eV in p-type samples.     

Photoelectrochemistry of monoclinic ZnP2: A promising new solar cell material

For the first time monoclinic p-type ZnP₂ has been used as photocathode material in a photoelectrochemical cell. In lM NaOH a saturation photocurrent of 8mA/cm² is observed (I = 120 mW/cm²) while the dark current is negligible. The pH dependence of the photocurrent is similar to that of p-GaAs. Using the Cr³⁺/Cr²⁺ EDTA redox system a photovoltage of 0.5 V is obtained from the shift of the photocurrent-potential curve with respect to the current-potential curve on a reversible Hg electrode. The spectral dependence of the photocurrent yields a value of 1.45 eV for the band gap in accordance with absorption measurements. These results show that an efficient liquid junction solar cell is feasible based on this material.     

Cd:O共掺杂AlN的电子结构和p型特性研究

为研究Cd：O共掺杂纤锌矿AlN的p型特性,进而揭示导致纤锌矿AlN空穴浓度增加的机理,对Cd：O共掺杂AlN进行了基于密度泛函理论的第一性原理研究.通过计算Cd_n-O（n=1,2,3,4）复合体掺杂AlN的结合能,发现Cd：O在AlN中可以稳定存在,共掺杂提高了Cd在AlN中的固溶度.分析Cd和Cd₂-O掺杂AlN体系的激活能,发现Cd₂-O的激活能比Cd减小0.21 eV,表明Cd₂-O的空穴浓度比单掺Cd大约提高 关键词： Cd：O共掺杂 纤锌矿AlN 电子结构 p型掺杂特性     

Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface — Existence of the Surface States Stark Effect (SSSE)

Density Functional Theory (DFT) calculations indicate that energetically stable structure of clean GaN(0001) surface posses (2 × 1) reconstruction, having every second row of Ga located near plane of N atoms, that gives rise to Ga-related dispersionless surface electronic state, already identified by angle resolved photoelectron spectroscopy (ARPES) measurements [S.S. Dhesi et al. Phys. Rev. B 56 (1997) 10271, L. Plucinski et al. Surf. Sci 507-10 (2002) 223, S. M. Widstrand et al. Surf. Sci. 584 (2005) 169]. The energy reduction in reconstruction proceeds via change of the hybridization of the occupied Ga surface states from sp³ to sp², transforming the empty states to p_z type. It is also shown that the electric subsurface field, modeled in new slab model which allows to simulate electric fields at the semiconductor surfaces [P. Kempisty et al., J. Appl. Phys. 106 (2009) 054901], strongly affects the energy of electronic states of GaN(0001) surfaces. The change of the field may shift the energy of surface states of bare and hydrogen covered GaN(0001) surface, by several eV with respect to the band states. The phenomenon, denoted as Surface States Stark Effect (SSSE), explains various band bending values, measured at differently doped n-type GaN(0001) surfaces. It is shown also that, for the adsorbate density up to one H atom for each Ga surface atom i.e. 1 monolayer coverage (1 ML), the hydrogen adatoms are located at the on-top positions, i.e. directly above Ga atoms. For these adsorbate densities, the H-related quantum surface state is located slightly below the valence band maximum (VBM) in the case of p-type GaN surface. For n-type GaN, the H-related surface state is located deeply in the valence band, about 2 eV below VBM. For higher, 1.25 ML hydrogen coverage, the two H adatoms create either surface attached H₂ ad-molecule (energetically stable) or triple bridge configuration is created (metastable). The H₂ ad-molecule is weekly attached to the surface, having the desorption energy barrier equal to 0.16 eV. For 1.25 ML coverage the DFT results were obtained for p-type GaN only. They show that in the ad-molecule case, a new surface electronic state arises which is located about 6.7 eV below VBM. In the case of the bridge configuration, the bridge related surface state is located closely to the conduction band minimum (CBM).     

Capacitance spectroscopy of a system of gapless Dirac fermions in a HgTe quantum well

Information on the density of states of two-dimensional Dirac fermions in a 6.6-nm-thick HgTe quantum well that corresponds to a transition from the direct to inverted spectrum is obtained for the first time by means of capacitance measurements. It is found that the density of states of Dirac electrons is a linear function of the Fermi energy at E _F > 30 meV with the corresponding velocity vDF = 8.2 × 10⁵ m/s. At lower energies, this dependence deviates from the linear law, indicating a strong effect of disorder, which is associated with fluctuations of a built-in charge, on the density of states of the studied system near the Dirac point. At negative energies, a sharp increase in the density of states is observed, which is associated with the tail of the density of states of valleys of heavy holes. The described behavior is in agreement with the proposed model, which includes both the features of the real spectrum of Dirac fermions and the effect of the fluctuation potential.     

Contact potential barriers and characterization of Ag-doped composite TiO2 nanotubes

Ag-doping TiO₂ composite nanotubes (Ag-TNTs) were synthesized by alkaline fusion followed by hydrothermal treatment. The microstructure and morphology of the materials were characterized by XRD, TEM, XPS, SPS (surface photovoltage spectroscopy), FISPS (electric field-induced surface photovoltage spectroscopy) and Raman spectroscopy. First-principles calculations based on density-functional theory (DFT) showed the formation of several impurity levels near the top of the valence band in the band gap (E_g) of rutile TiO₂ due to Ag doping. A “double junction” is proposed, involving a Schottky junction and p–n junction (denoted as “Ag-p–n junction”) occurring between the Ag particles and the nanotube surface, as well as forming inside TiO₂ nanotubes, respectively. The strongly built-in electric field of the junctions promotes the separation of photo-holes and photoelectrons, enhancing the photocatalytic efficiency. XRD results indicated that the composite Ag-TNTs exist as a mixture of anatase and rutile phases. XPS results showed that Ti⁴⁺ is the primary state of Ti. Raman spectral analysis of Ag-TNTs revealed the presence of a new peak at 271 cm⁻¹. The red-shift of the absorption light wavelength of Ag-TNTs was 0.16 eV (20 nm) due to a considerable narrowing of E_g by the existing impurity levels.