Surface photovoltage measurement in MOS structures

A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E _t ¹ = E_v + 0.25 eV and E _t ² = E_c – 0.30 eV in the oxide-silicon interface of the investigated structures had been found.     

Relation between interface states and temperature behavior of the barrier height of silver contacts on clean cleaved n-type silicon

The properties of silver-silicon interfaces formed by cleaving n-type silicon in ultra high vacuum (UHV) in a stream of evaporating silver atoms were studied. The barrier heights of these contacts were measured at different temperatures by using C-V techniques. All measurements were performed in UHV. The dependence of the barrier height upon temperature did not follow the temperature dependence of the Si band gap as it is usually found. The measured temperature behavior depended on the roughness of the Si surface. The temperature behavior can be explained by assuming a specific band structure of the interface states. For Ag contacts on atomically smooth n-type Si, the interface states were found to be arranged in two bands, one band 4 × 10^?3 eV wide with acceptor type states 0.18 eV below the intrinsic level E_i and a density of 10¹⁷ states/cm² eV, and the other 1 eV wide with donor type states with its upper edge 0.28 eV below E_i, and a density of 4 × 10¹⁴ states/cm²eV.     

Astrophysical and structural peculiarities of extensive air showers with energy E 0 ≥ 1017 eV from Yakutsk EAS array data

The astrophysical characteristics of primary cosmic rays (PCRs) and the structure of extensive air showers (EASs) with energy E ₀ ≥ 10¹⁷ eV are simultaneously analyzed using the Yakutsk EAS array data acquired in the period 1974–2005. Enhanced and reduced particle fluxes are shown to come from the disk of the Supergalaxy (the Local Supercluster of galaxies) at E ₀ ≥ 5 × 10¹⁸ eV and E ₀ ≤ (2?3) × 10¹⁸, respectively. The development of air showers with E ₀ ≥ (3?5) × 10¹⁸ eV differs significantly from that at lower energies. This is interpreted as a manifestation of the possible interaction between extragalactic PCRs and the matter of this spatial structure.     

Characterization of GaAs/AlxGa1-xAs heterointerface defects by means of capacitive measurememts

x Ga_1-xAs heterojunctions grown by liquid-phase epitaxy. Interface states with hiqh concentration, N_t=3×10¹¹ cm^-2 and energy level E_c-E_t=0.14 eV distributed in a box 150 Å wide at the heterointerface and acting as electron traps are observed. The possible origin could be the isolated arsenic vacancy V_As in n-GaAs. Received: 25 April 1996/Accepted: 22 January 1997     

Molecular binding states on clean and oxidized surfaces: SiO(g) + W(clean) and SiO(g) + W(oxidized)

The interactions between a molecular beam of SiO(g) and a clean and an oxidized tungsten surface were examined in the surface temperature range 600 to 1700 K by mass spectrometrically determined sticking probabilities, by flash desorption mass spectrometry (FDMS) and by Auger electron spectroscopy (AES). The sticking probability, S, of SiO has been determined as a function of coverage and of surface temperature for the clean and the oxidized tungsten surface. Over the temperature range studied and at zero coverage S = 1.0 and 0.88 for the clean and oxidized tungsten surfaces respectively. The results are consistent with both FDMS and AES. For coverage up to one monolayer there is one major adsorption state of SiO on the clean tungsten surface. FDMS shows that T_m = constant (T_m is the surface temperature at which the desorption rate is maximum) and that desorption from this state is described by a simple first order desorption process with activation energy, E_d = 85.3 kcal mole^?1 and pre-exponential factor, ν = 2.1 × 10¹⁴ sec^?1. AES shows that the 92 eV peak characteristic of silicon dominates. In contrast on the oxidized tungsten surface, T_m shifts to higher temperatures with increasing coverage. The data indicate a first order desorption process with a coverage dependent activation energy. At low coverage (θ ? 0.14) there is an adsorption state with E_d = 120 kcal mole^?1 and ν = 7.6 × 10¹⁹, while at θ = 1.0, E_d = 141 kcal mole^?1. This variation is interpreted as due to complex formation on the surface. AES shows that on oxidized tungsten, in contrast to clean tungsten, the dominant peaks occur at 64 and 78 eV, and these peaks are characteristic of higher oxidation states of silicon. Thus, it is concluded that SiO exists in different binding states on clean and oxidized tungsten surfaces.     

Evaluation of plasmon-loss spectra of molybdenum using elastic-peak electron spectroscopy

Plasmon-loss spectra of clean polycrystalline molybdenum surfaces have been determined in the primary energy range E_p = 50–3000 eV. Spectra a distributions (nonderivative mode). A simplified model is described for evaluating plasmon-loss spectra using elastic-peak electron spectroscopy, as de of elastically reflected electrons is determined by integrating the N(E) spectrum of secondary and backscattered electrons. The ratio of the ar (23–24 eV) to that of the elastic peak is Pλ, the product of the probability for creating a volume plasmon loss and the inelastic mean free pat second plasmon-loss peak is (Pλ)². Evaluation of our experimental plasmon-loss spectra gives Pλ = 0.4–0.5 for E_p > 500 eV. Th constitutes ～50% of all losses determining the IMFP, interband loss processes being important in the remainder. For the low energy range, E_p found. For E_p < 100 eV, no volume plasmon-loss peak could be detected in our N(E) spectra. The simplified model proves to be valid fo plasmon-loss peak (11–12 eV), i.e., such that N_pls/N_e ? 10^?2. Some results are presented concerning surface plasmon losses as molybdenum surface.     

Quantum transport in a time-dependent random potential with a finite correlation time

Using an earlier density matrix formalism in momentum space we study the motion of a particle in a time-dependent random potential with a finite correlation time τ, for 0 < t ? τ. Within this domain we consider two subdomains bounded by kinetic time scales (t _c ² = 2m? ^-1 c ², c ² = σ ², ξ ², σξ, with 2σ the width of an initial wavepacket and the correlation length of the gaussian potential fluctuations), where we obtain power law scaling laws for the effect of the random potential in the mean squared displacement 〈x ²〉 and in the mean kinetic energy 〈E _kin〉. At short times, ? min (t _σ ², 1/2t _ξ ²), 〈x ²〉 and 〈E _kin〉 scale classically as t ⁴ and t ², respectively. At intermediate times, t _σξ ? t ? 2t _σ ² and 1/2t _ξ ² ? t ? t _σξ, these quantities scale quantum mechanically as t ^3/2 and as √t, respectively. These results lie in the perspective of recent studies of the existence of (fractional) power law behavior of 〈x ²〉 and 〈E _kin〉 at intermediate times. We also briefly discuss the scaling laws for 〈x ²〉 and 〈E _kin〉 at short times in the case of spatially uncorrelated potential.     

Dynamics of interaction of H2 and D2 with Ni(110) and Ni(110) surfaces

Elastic and direct-inelastic scattering as well as dissociative adsorption and associative desorption of H₂ and D₂ on Ni(110) and Ni(111) surfaces were studied by molecular beam techniques. Inelastic scattering at the molecular potential is dominated by phonon interactions. With Ni(110), dissociative adsorption occurs with nearly unity sticking probability s₀, irrespective of surface temperature T_s and mean kinetic energy normal to the surface 〈 E_⊥ 〉. The desorbing molecules exhibit a cos θ_e angular distribution indicating full thermal accommodation of their translation energy. With Ni(111), on the other hand, s₀ is only about 0.05 if both the gas and the surface are at room temperature. s₀ is again independent of T_s, but increases continuously with 〈 E⊥ 〉 up to a value of ～0.4 for 〈 E⊥ 〉 = 0.12 eV. The cos⁵θ_e angular distribution of desorbing molecules indicates that in this case they carry off excess translational energy. The results are qualitatively rationalized in terms of a two-dimensional potential diagram with an activation barrier in the entrance channel. While the height of this barrier seems to be negligible for Ni(110), it is about 0.1 eV for Ni(111) and can be overcome through high enough translational energy by direct collision. The results show no evidence for intermediate trapping in a molecular “precursor” state on the clean surfaces, but this effect may play a role at finite coverages.     

Mechanism and kinetics of Cu2O oxidation in chemical looping with oxygen uncoupling

In chemical looping with oxygen uncoupling, oxygen carrier (OC) circulates between the fuel and air reactors to release and absorb O₂ repeatedly. In order to assess the re-oxidation characteristic of Cu-based OC in the air reactor from the microscopic mechanism and macroscopic kinetics perspective, DFT calculations and isothermal oxidation experiments were conducted. In DFT calculations, Cu₂O(111) surface was chosen as the objective surface to explore the oxygen uptake as well as the atomic transportation pathways, and to determine the rate-limiting steps basing on the energy barrier analyses. It was found that the energy barrier of the surface reaction step (0.96?eV) is smaller than that of the ions diffusion step (1.61?eV). Moreover, the Cu cations outward diffusion occurs more easily than O anions inward diffusion, which confirmed the epitaxial growth characteristic of Cu₂O oxidation. The isothermal oxidation experiments were conducted in a thermogravimetric analyzer (TGA), and about 3.5?mg CuO@TiO₂-Al₂O₃ particles within the diameter range of 75–110?µm were tested between 540 and 600 °C, where the internal and external gas diffusion effects were eliminated. Mixtures of 5.2-21.0?vol.% O₂ in N₂ were adopted as the gas agent for oxidation. Based on the understandings obtained from DFT calculations, a simple mathematical model with unknown parameters of the surface reaction process (mainly the activation energy, E_k) and ions diffusion process (mainly the activation energy, E_D) was established to describe the overall oxidation process in TGA experiments. Eventually, these unknown parameters were determined as E_k=?50.5?kJ/mol and E_k=?79.2?kJ/mol via global optimization. With the attained parameters, simulations reproduced the experimental results very well, which demonstrated that this simplification model, where grain is converted almost layer by layer but different from the feature of the shrinking core model is able to accurately describe the overall oxidation process of Cu₂O.     

The adsorption of CO on Cu surfaces studied by electron energy loss spectroscopy

Electron energy loss spectroscopy (ELS) in the energy range of electronic transitions (primary energy 30 < E₀ < 50 eV, resolution ΔE ≈ 0.3 eV) has been used to study the adsorption of CO on polycrystalline surfaces and on the low index faces (100), (110), (111) of Cu at 80 K. Also LEED patterns were investigated and thermal desorption was analyzed by means of the temperature dependence of three losses near 9, 12 and 14 eV characteristic for adsorbed CO. The 12 and 14 eV losses occur on all Cu surfaces in the whole coverage range; they are interpreted in terms of intramolecular transitions of the CO. The 9 eV loss is sensitive to the crystallographic type of Cu surface and to the coverage with CO. The interpretation in terms of d(Cu) → 2π¹(CO) charge transfer transitions allows conclusions concerning the adsorption site geometry. The ELS results are consistent with information obtained from LEED. On the (100) surface CO adsorption enhances the intensity of a bulk electronic transition near 4 eV at E₀ < 50 eV. This effect is interpreted within the framework of dielectric theory for surface scattering on the basis of the Cu electron energy band scheme.     

Multistage radiation-stimulated changes in the microhardness of silicon single crystals exposed to low-intensity β irradiation

Radiation-stimulated and postradiation changes in the microhardness of silicon single crystals exposed to irradiation with a low-intensity flux of β particles (I = 9 × 10⁵ cm^?2 s^?1, W = 0.20 + 0.93 MeV) are studied. It is established that the inversion of the radiation-induced plastic effect occurs at a characteristic irradiation time τ_c = 75 min; i.e., irradiation of silicon single crystals for a time τ < τ_c leads to nonmonotonic reversible hardening, whereas nonmonotonic reversible softening is observed under irradiation for a time τ > τ_c. It is demonstrated that there exists a correlation between the nonmonotonic dependences of the microhardness and the concentration of electrically active defects at acceptor levels with energies E _c ? 0.11 eV, E _c ? 0.13 eV, and E _c ? 0.18 eV on the irradiation time.     

Deep level defects in gamma-ray irradiated ge doped with pb or sn

Abstract

Deep level transient spectroscopy has been used to investigate the electrical properties of deep defect states in γ-ray irradiated Ge doped with the isoelectronic elements Pb or Sn. Three deep levels are observed in the irradiated Pb-doped Ge (E_v +0.28 eV, E_c ?0.33 eV, E_c ?0.39 eV) and two deep levels observed in the Sn-doped Ge (E_v + 0.19 eV, E_c ?0.15 eV). For the same γ-ray irradiation doses, Ge crystals grown from graphite crucibles and doped with Pb or Sn shows about two-thirds the total density of deep level defects observed in undoped Ge grown from synthetic quartz crucibles. All of the defect states observed were removed by a 1 hour, 250°C thermal anneal, and all but the E_c ?0.39 eV state in the Pb-doped material were neutralized by exposure to a low pressure atomic hydrogen plasma.     

Analysis of current–voltage and capacitance–voltage characteristics of perylene-monoimide/n-Si Schottky contacts

The electrical and interface state properties of Au/perylene-monoimide (PMI)/n-Si Schottky barrier diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. A good rectifying behavior was seen from the I–V characteristics. The series resistance (R_s) values were determined from I–V and C–V characteristics and were found to be 160 Ω and 53 Ω, respectively. The barrier height (Φ_b) of Au/PMI/n-Si Schottky diode was found to be 0.694 eV (I–V) and 0.826 eV (C–V). The ideality factor (n) was obtained to be 4.27 from the forward bias I–V characteristics. The energy distribution of interface state density (N_ss) of the PMI-based structure was determined, and the energy values of N_ss were found in the range from E_c ? 0.508 eV to E_c ? 0.569 eV with the exponential growth from midgap toward the bottom of the conduction band. The values of the N_ss without R_s are 2.11 × 10¹² eV^?1 cm^?2 at E_c ? 0.508 eV and 2.00 × 10¹² eV^?1 cm^?2 at E_c ? 0.569 eV. Based on the above results, it is clear that modification of the interfacial potential barrier for metal/n-Si structures has been achieved using a thin interlayer of the perylene-monomide.     

Fine structure in optical transitions from 3d and 4d core levels to the lower conduction band in Ga-V and In-V compounds

We investigate fine structure in energy derivative reflectance (EDR) spectra near 20–21 eV in GaP, GaAs, and GaSb, and near 18–20 eV in InP, InAs, and InSb. Derived energy values for X^c₁ thresholds in GaP and GaSb, and L^c₁ and X^c₁ thresholds in GaAs, agree well with previous Schottky barrier electroreflectance (ER) results. L-X structure splittings in EDR spectra of InAs and InSb, for which Schottky barrier ER measurements cannot be performed, are 0.29 and 0.44 eV, respectively. Estimates of expected locations of these structures, based on XPS and absorption data and band structure calculations, indicate energy deficits of 0.2 eV for In4d-L^c₁ and 0.5 eV for In4d-X^c₁ transitions, respectively.     

Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface — Existence of the Surface States Stark Effect (SSSE)

Density Functional Theory (DFT) calculations indicate that energetically stable structure of clean GaN(0001) surface posses (2 × 1) reconstruction, having every second row of Ga located near plane of N atoms, that gives rise to Ga-related dispersionless surface electronic state, already identified by angle resolved photoelectron spectroscopy (ARPES) measurements [S.S. Dhesi et al. Phys. Rev. B 56 (1997) 10271, L. Plucinski et al. Surf. Sci 507-10 (2002) 223, S. M. Widstrand et al. Surf. Sci. 584 (2005) 169]. The energy reduction in reconstruction proceeds via change of the hybridization of the occupied Ga surface states from sp³ to sp², transforming the empty states to p_z type. It is also shown that the electric subsurface field, modeled in new slab model which allows to simulate electric fields at the semiconductor surfaces [P. Kempisty et al., J. Appl. Phys. 106 (2009) 054901], strongly affects the energy of electronic states of GaN(0001) surfaces. The change of the field may shift the energy of surface states of bare and hydrogen covered GaN(0001) surface, by several eV with respect to the band states. The phenomenon, denoted as Surface States Stark Effect (SSSE), explains various band bending values, measured at differently doped n-type GaN(0001) surfaces. It is shown also that, for the adsorbate density up to one H atom for each Ga surface atom i.e. 1 monolayer coverage (1 ML), the hydrogen adatoms are located at the on-top positions, i.e. directly above Ga atoms. For these adsorbate densities, the H-related quantum surface state is located slightly below the valence band maximum (VBM) in the case of p-type GaN surface. For n-type GaN, the H-related surface state is located deeply in the valence band, about 2 eV below VBM. For higher, 1.25 ML hydrogen coverage, the two H adatoms create either surface attached H₂ ad-molecule (energetically stable) or triple bridge configuration is created (metastable). The H₂ ad-molecule is weekly attached to the surface, having the desorption energy barrier equal to 0.16 eV. For 1.25 ML coverage the DFT results were obtained for p-type GaN only. They show that in the ad-molecule case, a new surface electronic state arises which is located about 6.7 eV below VBM. In the case of the bridge configuration, the bridge related surface state is located closely to the conduction band minimum (CBM).     

An interpretation of dlts spectra of Al/Si3N4/ultrathin SI/GaAs structures — Effect of quantum well or interface states?

We discuss DLTS andC-V measurements on Al/Si₃N₄/Si(2nm)/n-GaAs (≈ 5×10¹⁷ cm^?3) structures. Three discrete deep traps superimposed on a U-shaped interface-state continuum have been identified, with respective thermal energies:E _c?0.53 eV,E _c?0.64 eV, andE _v+0.69 eV. The second one (0.64 eV) is presented as an electric field sensitive level, its enhanced phonon-assisted emission resulting in a rapid shift of the corresponding DLTS peak to lower temperatures, as the applied (negative) reverse bias voltage increases. An interpretation through emission from the quantum well, introduced by means of the intermediate ultrathin Si layer, has failed.     

Polycrystalline GaSb films prepared by the coevaporation technique

Gallium antimonide (GaSb) films were deposited onto fused silica and n-Si (100) substrates by coevaporating Ga and Sb from appropriate evaporation sources. The films were polycrystalline in nature. The size and the shape of the grains varied with the change in the substrate temperature during deposition. The average surface roughness of the films was estimated to be 10 nm. Grain boundary trap states varied between 2×10¹² and 2.2×10¹² cm^?2 while barrier height at the grain boundaries varied between 0.09 eV and 0.10 eV for films deposited at higher temperatures. Stress in the films decreased for films deposited at higher temperatures. XPS studies indicated two strong peaks located at ～543 eV and ～1121 eV for Sb 3d_3/2 and Ga 2p_3/2 core-level spectra, respectively. The PL spectra measured at 300 K was dominated by a strong peak located ～0.55 eV followed by two low intensity peaks ～0.63 eV and 0.67 eV. A typical n-Si/GaSb photovoltaic cell fabricated here indicated V _oc～311 mV and J～29.45 mA/cm², the density of donors (N _d)～3.87×10¹⁵ cm^?3, built in potential (V _bi)～0.48 V and carrier life time (τ)～28.5 ms. Impedance spectroscopy measurements indicated a dielectric relaxation time ～100 μs.     

Energy spectrum and anisotropy of cosmic rays with <Emphasis Type="Italic">E</Emphasis><Subscript>0</Subscript>≥10<Superscript>17</Superscript> eV from Yakutsk EAS array data

Data from the Yakutsk extensive air shower array for the period 1974–2004 are used to analyze the energy spectrum and anisotropy of primary cosmic rays (PCRs) with energy E₀≥10¹⁷ eV. The spectra from different regions of the sky are shown to differ in shape. Enhanced and reduced particle fluxes come from the disks of the Galaxy and the Supergalaxy (the Local Supercluster of galaxies) at E₀≥5×10¹⁸ eV and E₀≤ (2?3)×10¹⁸ eV, respectively. This is interpreted as a manifestation of the possible interaction between extragalactic PCRs and the matter of these spatial structures.     

Evidence of non-statistical structures in the elastic and inelastic scattering of58Ni+58Ni and58Ni+62Ni and intermediate dinuclear states

Excitation functions and angular distributions of⁵⁸Ni+⁵⁸Ni and⁵⁸Ni+⁶²Ni scattering at energies just above the Coulomb barrier have been measured aroundθ _cm=90° in energy stepsΔE _cm=0.25 MeV fromE _cm ? 110 MeV toE _cm ? 120 MeV for⁵⁸Ni+⁵⁸Ni and fromE _cm ? 110 MeV toE _cm ? 118 MeV for⁵⁸Ni+⁶²Ni. Evidence for structure of non-statistical character has been found in the angle-summed excitation functions; this evidence is corroborated by the analysis of the angular distributions. This is the first time that non-statistical structure in elastic and inelastic scattering is reported with high confidence level for this mass and excitation energy ranges. Attempts are presented to understand the nature of this structure, including the presence of intermediate dinuclear states and virtual states in a potential well.     

Electrical measurements of the electron irradiation induced E- and H-traps in GaAs under hydrostatic pressure

The change of resistivity of the 2.3 MeV-electron-irradiated bulk n- and p-GaAs have been measured at hydrostatic pressure up to 5 kbar at RT. Corrections for the changes in free electron and hole mobilities with pressure have been neglected. The resistivity changes are explained by a dependence on pressure of the ionisation energy of the radiation-induced E- and H-traps. The results indicate that most from these radiation- induced levels moves away from the conduction-band edge (γ_c-point) at a rate approximately (0.8?1.0)γ_G, here γ_G=11.6×10^?6 eV bar^?1 is the energy gap pressure coefficient for GaAs at RT. The high changes in ionization energies of E2 to E5-traps upon pressure are to be compared with the lower changes in ionization energies found for the deep-lying impurity levels. In accordance with the theoretical investigation it was suggested that most of the investigated radiation-induced levels in GaAs are t₂-states of Ga- and As-vacancies.