Fuchs-Kliewer phonon spectrum of Co3O4(110) single crystal surfaces by high resolution electron energy loss spectroscopy

The Fuchs-Kliewer phonon spectrum of single crystal Co₃O₄(110) has been analyzed by high resolution electron energy loss spectroscopy (HREELS) and the four fundamental phonon losses have been identified at 26.8, 47.5, 71.1 and 84.7 meV (216, 383, 573 and 683 cm⁻¹). This is the first HREELS study reported for an intrinsic spinel single-crystal surface with primary focus on the Fuchs-Kliewer phonon structure. The Co₃O₄ crystal is first characterized by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED), which establish the composition, cleanliness, and order of the (110) surface. Electron scattering is then used to obtain a series of well-resolved Fuchs-Kliewer phonon spectra over 2.25-14.25 eV incident electron energy range. The variation in phonon intensity with primary beam energy is shown to agree with that predicted by dielectric theory.     

Comparison of site-specific valence band densities of states determined from Auger spectra and XPS-determined valence band spectra in GeS (001) and GeSe (001)

Auger lineshapes of the Ge M₁M_4,5V and M₃M_4,5V and Se _M1M_4,5V transitions in GeS (001) and GeSe (001) are measured and compared to XPS valence band spectra. Distortions in both types of spectra due to inelastic scattering, analyzer and source broadening, and core level lifetime broadening are removed by deconvolution techniques. The valence band consists of three main peaks at ?2 eV, ?8 eV, and ?13 eV. There is excellent agreement of peak positions in AES and XPS spectra. The Auger lineshapes can be interpreted in terms of site-specific densities of states. They indicate that the states at ～?8 eV and at ～?13 eV are associated with the cation and anion sites respectively. The bonding p-like states at the top of the valence band have both cation and anion character. The Auger lineshapes indicate that the states closest to the valence band maximum are preferentially associated with Ge.     

Thermal and low energy electron bombardment induced oxygen loss of V2O5 single crystals: Transition into V6O13

Thermal treatment in UHV of clean V₂O₅ single crystals results in homogeneous oxygen loss, involving a rate-limiting surface reaction. Depending upon the pretreatment, aircleaved samples transform topotactically into V₆O₁₃, or into what we call a phase Q of probable composition V₄O₉ or V₆O_13.5. Low energy electron bombardment of clean UHV-cleaved V₂O₅(010) surfaces produces the transition V₂O₅ → V₆O₁₃ at room temperature. This effect is attributed to electron beam stimulated reactions. The influence on the transition of carbon-containing impurities is discussed. The nucleation of V₆O₁₃ on V₂O₅ is explained by a model based on a surface reaction, the rate of which is enhanced by the interaction with contaminating molecules and low energy electron bombardment. The presence of shear planes at the boundary between V₂O₅ and the V₆O₁₃ nuclei locally enhances the oxygen loss rate and allows the V₆O₁₃ nuclei to grow into the bulk.The enhanced mobility of the oxygen at these boundaries is thought to influence favorably the oxidation-regeneration rate of the V₂O₅-catalyst.     

P2S5/NH4OH处理GaAs(100)表面的电子能谱研究

采用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了P₂S₅/NH₄OH钝化液处理的GaAs(100)表面的微观特性。AES测量表明,在钝化膜和GaAs衬底之间的界面处无O组分,只有P和S组分。XPS测量分析指出,经过P₂S₅/NH₄OH溶液处理后,GaAs表面处Ga₂O₃和As₂O_{3关键词：}     

Properties and identification of oxygen sites at the V2O5(010) surface: theoretical cluster studies and photoemission experiments

Density functional theory cluster studies and angular resolved photoemission (ARUPS) measurements were performed to examine properties of differently coordinated surface oxygens at the V₂O₅(010) surface. Calculations on embedded clusters as large as V₁₆O₄₉H₁₈ confirm the ionic character of the oxide. The computed width of the O 2sp dominated valence band region of V₂O₅ and the work function value of V₂O₅ (010) are in good agreement with the present photoemission data for freshly cleaved V₂O₅(010) samples. Cluster derived total and partial densities of states (DOS, PDOS) can be used to identify differently coordinated surface oxygens. The PDOS referring to terminal (vanadyl) oxygens is localized near the center of the valence band whereas the PDOS’s of the different bridging oxygens yield a broad distribution covering the full energy range of the valence bands. The shape of the experimental ARUPS curves for V₂O₅(010) is well reproduced by the cluster DOS. Thus, the most prominent central peak in the experimental spectrum can be assigned to emission from terminal oxygen while the peripheral peaks at the top and bottom of the valence energy region are characterized as mixtures of vanadium with bridging oxygen induced contributions. This interpretation forms a basis to get insight into microscopic features at the real V₂O₅(010) surface such as imperfections and adsorbate binding. The present study suggests that the different O 2sp derived peaks observed in the photoemission experiment may be taken as monitors of the differently coordinated oxygens at the oxide surface and can be used to study details of catalytic surface reactions in which these oxygens participate.     

ELECTRONIC STRUCTURE STUDIES OF THE C60 FILM CONDENSED ON 2H-MoS2(0001) SURFACE

The electronic structure and vibrational spectrum of the C₆₀ film condensed on a 2H- MoS₂(0001) surface have been investigated by X-ray photoelectron spectroscopy (XPS), ul-traviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES) and infrared high-resolution electron-energy-loss spectroscopy (HREELS). AES analysis showed that at low energy side of the main transition, C₆₀ contains a total of three peaks just like that of graphite. However, the energy position of the KLL main Auger transition of C₆₀ looks like that of diamond, indicating that the hybridization of the carbon atoms in C₆₀ is not strictly in sp²- bonded state but that the curvature of the molecular surface introduces some sp²pz- bonded character into the molecular orbitals. XPS showed that the C 1s binding energy in C₆₀ was 285.0eV, and its main line was very symmetric and offered no indication of more than a single carbon species. In UPS measurement the valence band spectrum of C₆₀ within 10eV below the Fermi level (E_F) shows a very distinct five-band structure that character-izes the electronic structure of the C₆₀ molecule. HREEL results showed that the spectrum obtained from the C₆₀ film has very rich vibrational structure. At least, four distinct main loss peaks can be identified below 200 meV. The most intense loss was recorded at 66 meV, and relatively less intense losses were recorded at 95, 164 and 197meV at a primary energy of electron beam E_P = 2.0eV. The other energy-loss peaks at 46, 136, 157 and 186meV in HREEL spectrum are rather weak. These results have been compared to infrared spectrum data of the crystalline solid C₆₀ taken from recent literatures.     

Structure and composition of the segregated Cu in V2O5/Cu system

We have investigated segregation of copper at the surface of V₂O₅ films deposited onto Cu substrate by employing surface analysis techniques. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) confirmed that the Cu is segregated at the surface and its chemical state is Cu₂O. According to secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS), the Cu concentration inside the deposited V₂O₅ layer is low. Ultraviolet photoelectron spectroscopy (UPS) and scanning tunneling spectroscopy (STS) revealed the segregation alters the surface local density of states. Surface analysis of deposited samples in ultra high vacuum (UHV) condition verified that the segregation occurs during the deposition. We have extended kinetic tight binding Ising model (KTBIM) to explain the surface segregation during the deposition. Simulation data approve the possibility of surface segregation during room temperature deposition. These results point out that on pure Cu substrate, oxidation occurs during the segregation and low surface energy of Cu₂O is the original cause of the segregation.     

The interaction of an O2 molecular beam with an Fe(110) surface

The initial interaction between an O₂ molecular beam and a cleaned Fe(110) surface has been studied by a combination of Auger electron spectrometric (AES) and mass spectrometric techniques. The incident molecular beam intensity was calibrated using a stagnation detector, and the initial sticking coefficient for chemisorption was determined by mass spectrometric measurement of the transient in molecular scattering behavior observed when the cleaned surface was exposed to the molecular beam. This permitted an absolute calibration of the AES system for oxygen, and allowed comparison of the kinetic measurements of the oxygen adsorption process by the two techniques. Results indicate that the initial sticking coefficient is 0.2 ± 0.01. Oxygen is initially chemisorbed up to a coverage of 1.6 ± 0.16 × 10¹⁵ cm^?2, by a process following Langmuir kinetics. Beyond this point AES studies indicate a slower rate of oxygen uptake which is independent of gas-phase oxygen pressure. The mass spectrometric studies further indicate that for a cleaned, annealed surface those oxygen molecules which are not chemisorbed are scattered in a non-diffuse manner.     

Stoichiometric and oxygen deficient MoO3(010) surfaces

The (010) surface of single crystal MoO₃ has been prepared and examined using LEED, XPS, UPS, and ELS. Three methods yield the stoichiometric surface: scraping in UHV and annealing, ion etching followed by reoxidation (770 K, 10² Pa O₂), or oxygen treatment to remove carbon contamination. LEED shows the surface periodicity is the same as that of the bulk (010). The MoO₃ valence band is 7 eV wide with density of states maxima at 1.5, 3.6, and 5.6 eV below the top of the valence band. Heating MoO₃ in vacuum reduces the surface region. XPS indicates the O/Mo atomic ratio decreases to 2.85 ± 0.12 on heating to 600 K. Ar ion bombardment disorders the surface and reduces the surface O/Mo atomic ratio to 1.6. Annealing of reduced surfaces at > 770 K incompletely reoxidizes them by diffusion of oxygen from the bulk. UPS of reduced and annealed MoO₃ exhibits two new emission features in the bandgap at 0.9 and 2.0 eV above the top of the valence band. These features originate from Mo derived states of a defect involving two or more Mo atoms, such as crystallographic shear planes. Because of the insulating nature of MoO₃, surface charging and electron beam induced damage were substantial hindrances to electron spectroscopic examination.     

Study of the electronic structure of sodium-vanadium bronze (Na x V2O5) single crystals at x = 0.23, 0.28, and 0.33

The photoelectron spectra and electron energy loss spectra in reflection geometry have been measured for the clean (010) surface of Na _x V₂O₅ compounds with x = 0.23, 0.28 and 0.33. The investigations made it possible to reveal some specific features of the electronic structure of such compounds. Ionization parameters of trinitrotoluene molecules have been measured at the surface of polycrystalline Na_0.33V₂O₅ and the (010) surface of the single crystals Na_0.28V₂O₅ and Na_0.33V₂O₅. The results of investigations can be successfully used in a construction of the model of electronic structure of alkaline oxide bronzes and also in the development of materials for selective surface ionization sources of organic nitro-compounds.     

SiO2 surface defect centers studied by AES

A theoretical model is proposed on how a Si dangling bond associated with an oxygen vacancy on a SiO₂ surface (E_s′ center) should be observed by Auger electron spectroscopy (AES). The Auger electron distribution N_A(E) for the L₂₃VV transition band is calculated for a stoichiometric SiO₂ surface, and for a SiO_x surface containing Si-(e^?O₃) coordinations. The latter is characterized by an additional L₂₃VD transition band, where D is the energy level of the unpaired electron e^?. The theoretical N_A(E) spectra are compared with experimental N(E) spectra for a pristine, and for an electron radiation damaged quartz surface. Agreement with the theoretical model is obtained if D is assumed to lie ≈2 eV below the conduction band edge. This result shows that AES is uniquely useful in revealing the absolute energy level of localized, occupied surface defect states. As the L₂₃VD transition band (main peak at 86 eV) cannot unambiguously be distinguished from a SiSi₄ coordination L₂₃VV spectrum (main peak at 88 eV), supporting evidence is presented as to why we exclude a SiSi₄ coordination for our particular experimental example. Application of the Si-(e^?O₃) model to the interpretation of SiO₂Si interface Auger spectra is also discussed.     

Investigation of ageing characteristics and identification of surface chemical changes on SrGa2S4:Ce display phosphor under electron beam bombardment

Cathodoluminescent ageing characteristics of SrGa₂S₄:Ce³⁺ under prolonged electron beam bombardment was studied and the data are presented. The cathodoluminescent intensity with an increasing Coulomb loading was observed to degrade under different primary electron beam voltages. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to monitor the surface chemical changes during electron beam bombardment and after the degradation process. Auger peak to peak heights monitored during the ageing process suggest a loss in S and C and an initial increase in oxygen concentration on the surface. XPS results indicate the formation of a SrO overlayer due to electron stimulated surface chemical reactions (ESSCRs).     

Auger and direct electron spectra in X-ray photoelectron studies of zinc,zinc oxide,gallium and gallium oxide

Auger and direct electron spectra from Zn, ZnO, Ga and Ga₂O₃ have been studied with X-ray photoelectron spectroscopy (ESCA). The chemical shift between zinc electron binding energies in Zn and ZnO is very small, whereas the zinc Auger electron signals are separated by 4.3 eV. In gallium, the oxide and metal signals are separated by 1.9 eV, but the Auger electron energy shift is three times as large. Thus the Auger signals are more sensitive to the chemical environment than the direct electron signals, which is the same relation as earlier observed for copper and copper oxides.     

Electron energy loss spectra and X-ray photoelectron spectra of Ca2V2O7

We have measured the electron energy loss spectra of Ca₂V₂O₇ in the reflexion mode, at incident energies between 200 and 2400 eV, and the X-ray photoelectron spectra excited by Al K α radiation. The abundant loss structures observed can be correlated with the possible interband transitions, collective oscillations, and excitation of O2s and V3p electrons within the V₂O₇^4- ion. The gap width and molecular orbital (MO) spread (or splitting) is about l eV larger in the V₂O₇^4- ion than in its component VO₄^3- ion. Excitation of O2s states, which may occur together with some MO over-gap transitions, displaces the collective oscillations about 7 eV towards lower energies. Deeper V3p electrons are excited with a maximum energy loss some 7 eV above their binding energy. Cross transitions from Ca3p levels into some empty states of the V₂O₇^4- ion, or direct transitions to available states of the Ca²⁺ ion could not be unambiguously identified. The energy dependence of the excitation cross section and of the electron penetration depth results in a significant variation of the relative intensity of various losses over the investigated energy range.     

Anisotropy of x-ray emission spectra and electronic structure of V2O5 single crystals

The results of investigation of x-rayVK- andVL-emission spectra orientation dependence for V₂O₅-single crystals are reported. The applicability of different options of electronic structure cluster calculations for the interpretation of x-rayVK-emission bands anisotropy in V₂O₅-single crystal is discussed.     

SiO2 and Al2O3 valence band density of states from self-deconvolution of L23VV Auger spectrum

The self-deconvolution of L₂₃VV Auger spectra of SiO₂ and Al₂O₃ has been carried out. The transition density functions obtained are compared with the local density of states (LDOS) of the valence band near the surface, as given by other techniques (XPS, UPS, XES) and also by theory. A fair agreement in the number and peak positions of valence band is produced. These compounds with MgO constitute an oxide series of increasing ionicity and the effects of initial hole localization in the transition density function are discussed.     

A study of the charging and dissociation of SiO2 Surfaces by AES

AES is used to determine the initial spectrum of a vacuum-broken SiO₂ surface and to follow its dissociation under the electron beam probe. Both Auger peaks heights and energies are affected by the irradiation. The change in stoichiometry is accompanied by a decrease of the surface charge by 5–8 V. The relation between stoichiometry and charge is explained by the influence of radiation-induced defects on secondary electron emission. The reduction of SiO₂ is characterized in terms of irradiation dose, dissociation cross-section and electron impact efficiency. Resistance to radiation damage is increased by surface carbon contamination. The chemical contribution to the Auger peak energy can be distinguished from the charging effect leading to a shift between element and compound of 12 eV for the silicon peak.     

Mg diffusion in K(Ta0.65Nb0.35)O3 thin films grown on MgO evidenced by Auger electron spectroscopy investigation

The diffusion of Mg in pulsed laser deposited K(Ta_0.65Nb_0.35)O₃ thin films epitaxially grown on (1 0 0) MgO single crystal substrate were investigated by Auger electron spectroscopy (AES). A diffusion of Mg from the substrate into the whole thickness (400 nm) of the as-deposited K(Ta_0.65Nb_0.35)O₃ films was observed with an accumulation of Mg at the surface. Ex situ post-annealing (750 °C/2 h) has led to a homogeneous distribution of Mg in all the ferroelectric coating. This strong reaction between film and substrate promotes a doping effect, responsible for the reduction of K(Ta_0.65Nb_0.35)O₃ dielectric losses in comparison with films grown on other substrates.     

Interaction of oxygen with a Mo(111) surface

Oxygen adsorption on a Mo(111) surface is investigated at low pressures (10^?7 to 10^?5 Pa) and room temperature by Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS). In agreement with previous studies it is established that the surface is not reconstructed during adsorption and the oxygen forms no ordered structures. On the basis of kinetic and spectroscopy data, the formation of two adsorption states on the surface within 1 monolayer is established. The valence band of a clean surface is studied in detail. An attempt is made to ascribe the peaks obtained to definite d states. The interaction between O₂ and Mo(111) is discussed in terms of the results obtained and a comparison with the O₂/W(111) system is made.     

Investigation of the characteristics and corrosion resistance of Al2O3/TiN coatings

Al₂O₃ /TiN double and Al₂O₃/Cr/TiN triple coatings were produced on stainless steel substrates using plasma-detonation techniques. Investigation of the microstructure and characteristics of the coatings after the preparation was performed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Auger electron spectroscopy (AES). The corrosion resistance of the coatings was studied in several electrolytic solutions (0.5 M H₂SO₄, 1 M HCl, 0.75 M NaCl) using electrochemical techniques (open circuit potential, cyclovoltammetry and potentiodynamic polarization). The obtained results showed, in most of the cases, an improvement of the corrosion resistance, except in NaCl solutions. The effect of the controlled thickness of TiN and Cr layers as well as the additional treatment with a high-current electron beam was also investigated. Nuclear reaction analysis (NRA), Rutherford backscattering spectroscopy (RBS) and scanning electron microscopy (SEM) were applied for the characterization of the samples before and after the corrosion experiments.