Temperature dependence of Raman linewidth and shift in CuI

The temperature dependence of the optical phonon linewidth and frequency shift in CuI has been measured in the temperature range of 4.2 ～ 300 K. Utilizing phonon dispersion curves obtained from neutron scattering measurements, the linewidths and frequency shifts are calculated in terms of three-phonon interactions proposed by Pine and Tannenwald. The experimental results for the change in linewidth and frequency with temperature are in good agreement with this theory.     

Optic phonons in mixed crystal of CuClCuBr

Optic phonons in CuClCuBr mixed crystals have been studied by means of Raman scattering and infrared absorption measurements. It is concluded that this system belongs to the two-mode type. The observed behaviour of the phonon mode is accounted for by the modified random-element-isodisplacement model fairly well. In connection with this interpretation, the origin of the double peak in the pure CuCl is discussed.     

Characteristics of coherent transverse optical phonon in CuI thin films on Au nano-films

We have investigated the coherent phonon in CuI thin films deposited on Au films with nanoscale roughness. It is found that the coherent transverse optical (TO) phonon in the CuI thin film on the Au film is dramatically enhanced, whereas that in the CuI thin film without the Au film is hardly observed. The enhancement of the coherent TO phonon in the CuI thin film on the Au film will originate from the surface enhanced electric field around the surface of the Au film with nanoscale roughness. To clarify the properties of the enhanced coherent phonon, we have investigated the pump-power dependence and pump-polarization dependence of the coherent phonon. We discuss the generation process of the coherent phonon in the CuI thin film on the Au film as compared with the pump-power dependence and the pump-polarization dependence.     

Lattice dynamics of CuBr and CuI by a modified rigid ion model

Phonon dispersion relations of CuBr and CuI have been studied on the basis of a modified rigid ion model in which a non-central force system is used for the short-range interactions. The results of the calculations show a satisfactory agreement with the experimental data.     

Energies,oscillator strengths,and phonon side bands for an exciton in polar semiconductors

Within the Wannier exciton model for polar semiconductors, energies, oscillator strengths, and phonon side bands are calculated for the exciton ground- as well as the excited-states. Numerical results for CuCl and CuBr have been found to agree quite well with experiments. In particular, the one phonon side band for the 2s-state in CuCl is shown to be as strong as the zero phonon line.     

Temperature dependences of phonon and mobile-ion spectra in superionic conductor CuBr

The temperature dependence of far-infrared reflectivity spectra in sintered CuBr has been measured from 18 to 570 K. Phonon and mobile-ion parameters are evaluated by the fitting procedure with the factored form of the dispersion relation. A strong fourth order anharmonicity is assigned. Estimated values of optical dielectric constant and optical ionic mobility μ_op decrease with increasing temperature within a limited temperature region. For μ_op value, the effects of mobile ion scattering by optical phonons and of the expansion of interionic distance are discussed with respect to the phonon damping constant and the ionic character of the interionic force.     

Spin-orbit splitting of the copper halides and its volume dependence

We have investigated theoretically and experimentally the dependence of the spin-orbit splitting of the edge excitons in CuCl, CuBr, and CuI on volume. The results indicate a large contribution of the change in p(halogen)-d(Cu) hybridization with volume, especially for CuCl.     

Theory of the photoelasticity of cuprous halides

Recently Biegelsen et al. have observed the anomalous photoelastic behaviour of CuCl, CuBr and CuI crystals. In this communication, we present a quantitative analysis of this behaviour within the framework of the Clausius—Mossotti theory of dielectric constant.     

Effects of non-equilibrium polar optic phonons and the band non-parabolicity on small signal high-frequency hot electrons ac mobility in narrow gap semiconductors in high magnetic fields

The small signal high-frequency ac mobility of hot electrons in n-HgCdTe in the extreme quantum limit at low and high temperatures have been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distribution .The energy loss rate has been calculated considering only optical phonon scattering while the momentum loss rate has been calculated considering acoustic phonon scattering and piezoelectric scattering together with polar optical phonon scattering and separately considering only the polar optical scattering. The results have been discussed and compared. It has been observed that at 20 K, the normalized mobility considering all the three scattering mechanisms differs appreciably from that considering only the polar optical phonon scattering. However, at 77 K, there is no difference in the normalized mobility. This establishes the fact that at higher temperature, the effect of acoustic phonon scattering and piezoelectric coupling is negligible, compared to the polar optical phonon scattering. So the ac mobility considering only polar optical phonon scattering has been studied at 77 and 20 K. The ac mobility is found to remain constant up to 100 GHz and thereafter it started decreasing at higher frequencies at 77 K whereas the ac mobility reduces at much lower frequencies at lower temperature at lower field. The non-parabolicity of the band structure enhances the normalized mobility.     

Modifying electron-phonon scattering rates in semiconductor quantum wells with thin AlAs layers

We have studied theoretically the electron-phonon scattering rates in GaAs/AlAs quantum wells which have additional thin AlAs layers in them using the dielectric continuum approach for the phonons. The confined and interface phonon modes and the intersubband electron phonon scattering rates of these structures have been calculated. The system with an additional AlAs layer is found to have intersubband electron scattering rates which are increased modestly as compared to those for the corresponding quantum well. These results show that scattering rates in general are expected to depend only weakly on the effects of system structure on the optical phonon spectra.     

The reflection spectra of cuprous halides at low temperature in the 4.5 to 30 eV range and related band structures

In a previous paper, we proposed a band scheme for C u C l established with the help of the reflection spectra measured at low temperature up to 30 eV. Now we are extending this study to CuBr and CuI where the optical data are obtained in the same way. Some experimental features are characterized, through the whole sequence, by their thermal behaviour and by the evolution of their structure in relation to the increasing spin orbit separation from CuCl to CuI. This study also shows the similarity of the band schemes in the three halides and the interest of optical measurements, at low temperature and in a wide energy range, for band scheme determination.     

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.     

Simulation of Confined and Interface Phonons Scattering in Terahertz Quantum Cascade Laser

We have performed the calculation of resonant-phonon transition in a terahertz quantum cascade laser. The electron wavefunctions and energy levels are obtained by solving the Schroedinger and Poisson equations selfconsistently. The scattering rates of the confined, interface, and bulk phonons are calculated by using the Fermi golden rule. It has been shown that the confined phonon scattering is comparable to the interface phonon scattering and should be taken into consideration in the calculation.     

Lattice dynamics of Nb3Sn at 300 K

The phonon dispersion curves have been calculated from a microscopic model for Nb₃Sn at 300 K and are in good agreement with the available inelastic neutron scattering data. The calculated phonon density of states exhibits the essential features of the experimental results obtained by incoherent inelastic neutron scattering.     

Resonance Raman scattering of excitonic polaritons by LO and acoustic phonons in ZnTe

We have observed dispersive two-phonon Raman scattering of polaritons by LO and acoustic phonons near the lowest exciton state of ZnTe. From the Stokes shifts of these Raman lines, it has been found that the scattering process switches from an acoustic phonon followed by one LO phonon to the reversed one: a LO phonon followed by an acoustic one.     

Resonant Raman study of LO + acoustic phonon modes in CdSe

In studying resonant Raman scattering in the vicinity of the A and B excitons of CdSe, we have observed three new Raman peaks. Two of the peaks have been identified as two-phonon modes consisting of a longitudinal optical (LO) phonon plus respectively a transverse acoustic (TA) and a longitudinal acoustic (LA) phonon. A theory which involves the scattering of photoexcited B excitons to the A exciton by acoustic phonons via the piezoelectric exciton-phonon interaction was found to explain quantitatively the peak positions, lineshape and resonance enhancements of the observed peaks.     

Normal modes of vibrations in CuBr

Phonon dispersion curves of CuBr have been measured at room temperature in the [001], [110] and [111] directions using inelastic neutron scattering. The results are interpreted in terms of a rigid ion model. Estimations are given for elastic constants.     

The phonon spectra of the superionic conductor KBiF4 (a CaF2 Analogue)

Theoretical calculations of the phonon infrared and Raman response in simple superionic conductors such as AgI, CuI, and CaF₂ types are based on two fundamental assumptions. First, most of the response can be understood in terms of a breakdown of the selection rules due to disorder (lack of translational symmetry) and second, harmonic lattice dynamics can be used with a good degree of accuracy. This is tested here experimentally in the superionic conductor K_1?xBi_1+xF_4+2x which has the CaF₂ structure (x=0.0 is analogous to 2CaF₂). By varying x we increase the disorder (via F-ion interstitials and vacancies) and measure broad temperature independent reduced Raman and infrared responses. The broad response is dependent on x in a manner consistent with the first assumption and the lack of temperature dependence is consistent with the second assumption. In order to understand the transverse optic vibrational frequencies (ω_TO) we have found that plots of ω_TO²vs. μ^-1 (reduced mass) are very helpful. The linearity of such plots, for example, for tetrahedrally bonded AgI, CuI, CuBr, CuCl (formal charge Z=1) and the difference of such results for similar materials but with formal charges of 2, 3, and 4 is surprising and not as yet understood. Other conclusions are discussed at the end of the paper.     

用Monte Carlo方法模拟闪锌矿相ZnS电子的输运特性

用Monte Carlo方法模拟闪锌矿相(zinc blende)ZnS电子的输运特性.实验采用的是非抛物线模型计算电子的能带结构,模拟包含了声学声子散射,极性光学声子散射,压电散射,电离杂质散射,能谷间散射以及自散射等散射机理.通过模拟得到了ZnS材料的平均漂移速度、平均电子能量随电场强度变化的曲线图,以及总散射率随电子能量变化图,并将结果与文献报道的模拟结果[1]进行比较得出:本实验方法具有模型简单,计算速度快,获得结果比较准确的优点.     

The effect of macroscopic polarization on intrinsic and extrinsic thermal conductivities of AlN

The effect of macroscopic polarization on thermal conductivity of bulk wurtzite AlN has been theoretically investigated. Our results show that macroscopic polarization modifies the phonon group velocity, Debye frequency and Debye temperature of the AlN. Using revised phonon velocity and Debye temperature, various phonon scattering rates and combined scattering rate are calculated as functions of the phonon frequency at room temperature. The intrinsic and extrinsic thermal conductivities of AlN have been estimated using these modified parameters. The theoretical analysis shows that up to a certain temperature the polarization effect acts as negative effect and reduces the intrinsic and extrinsic thermal conductivities. However, after this temperature both thermal conductivities are significantly enhanced. High phonon velocity and Debye temperature are the reason of this enhancement which happens due to the polarization effect. The revised thermal conductivities at room temperature are found to be increased by more than 20% in AlN due to macroscopic polarization phenomenon. The method we have developed can be taken into account during the simulation of heat transport in optoelectronic nitride devices to minimize the self heating processes.