Band structure of GaxIn1−xP alloys

An example of a systematic study of band structrue of alloys by electroreflectance technique is presented. Preliminary experimental analysis of lineshape convinced us of the good fitting of the three points method at room temperature. Electroreflectance spectra were measured at room temperature in the whole range of composition. The variations of E₀, E₁, E'₀, E₂ energies with composition are reported and compared with results of band structure calculation by the dielectric two bands method including the effect of disorder. The Γ-X crossover point is accurately determined. Inversely, electroreflectance technique is shown to be an interesting method for determining the composition of the alloys and to control macroscopic homogeneity.     

Flicker noise of hot electrons in silicon at T = 78 K

From flicker-noise and current-voltage measurements performed on an n⁺nn⁺ silicon planar device at T = 78 K we calculated Hooge's parameter α as a function of the electric field strength, E₀. We found that α(E₀) = α(0)/[1 + (E₀/E_c)²]. E_c is a critical field where the drift velocity equals the sound velocity, indicating the connection of the observed effect with acoustical phonon scattering.     

Chemical shifts of the copper and cobalt K absorption discontinuities in some ternary compounds

The present paper reports the chemical shifts of the K X-ray absorption discontinuities of copper and cobalt in ternary compounds. Relationships between the chemical shifts ΔE of the discontinuities and the various bond parameters (C, E_g, and f_i) calculated from Levine's theory have been established. It is found that distinctly separate curves can be drawn for different valencies (Cu¹⁺ and Cu²⁺, Co²⁺ and Co³⁺) of the absorbing ions. Making use of Levine's method for calculating bond charges, the effective charges q on the absorbing ions have been evaluated. The dependence of ΔE on q has been confirmed.     

Specific heat anomaly of single phase YBa2Cu3O7-δ at superconducting transition temperature

The specific heat of single phase YBa₂Cu₃O_7-δ has been measured using non-adiabatic method between 4.2K and 120K. There is a specific heat anomaly Δc at 90K (about 3.2% of total specific heat) approximately, due to superconducting transition. From the measured value of ΔC and transition temperature T_c, the electronic density of state at Fermi level N(E_F) and Sommerfeld parameter γ calculated are 2.55±0.30states/eV.Cu-atom and 2.77±0.30 mJ/mole.K², respectively. The experimental result of N(E_F) is consistent with that of the band calculation by Mattheiss. The Debye temperature above T_c in this material deduced from Debye function is about 340K. Below 20K, the relation C=γ'T+βT³ is satisfied. But the value of γ' is smaller. That means, most of the electrons have formed superconducting Cooper pairs which give no contribution to specific heat below 20K.     

Photoluminescence in germanium with a quasi-equilibrium dislocation structure

The dislocation-related photoluminescence of n-Ge single crystals with a quasi-equilibrium structure of 60° dislocations is investigated at a temperature of 4.2 K. It is shown that the dislocation-related photoluminescence spectra are described by a set involving from 8 to 13 Gaussian lines with a width of less than 15 meV. With due regard for the data available in the literature, the Gaussian lines with maxima at energies in the range 0.47 < E _m ≤ 0.55 eV are assigned to the emission of 90° Shockley partial dislocations involved in quasiequilibrium segments of 60° dislocations with different values of the stacking fault width Δ (Δ = Δ₀, Δ < Δ₀, and Δ > Δ₀). It is revealed that the d8 line at the energy E _m = 0.513 eV, which corresponds to the emission of straight segments with the equilibrium stacking fault width Δ₀, dominates in the photoluminescence spectra only at dislocation densities N _D < 10⁶ cm^?2. As the dislocation density N _D increases, the intensity of the d8 line decreases with the d7 line (E _m ≈ 0.507 eV) initially and the d7 and d6 lines (E _m ≈ 0.501 eV) then becoming dominant in the photoluminescence spectrum. The d7 and d6 lines are attributed to the emission of segments with stacking fault widths Δ < Δ₀. Possible factors responsible for the formation of stacking faults with particular widths Δ ≠ Δ₀ for quasi-equilibrium dislocations are discussed.     

A tem study of the crystallization behavior in amorphous vacuum condensed Er—Cu thin films

The isothermal crystallization of amorphous, vacuum condensed Er_0.6Cu_0.4 thin films was investigated in situ by transmission electron microscopy. Heterogeneous nucleation of ErCu crystallites was observed to occur on the thin rare-earth oxide layer which is inevitably formed on the external surface of the thin film exposed to the ambient atmosphere. The crystalline particles exhibited preferential growth in the direction parallel to the surface of the film. The crystallization process is interface controlled and characterized by a constant nucleation and constant growth rate. The kinetics of transformation were anslyzed in terms of Avrami's equation. The kinetic exponent n in Avrami's equation is equal to 2.9 in good agreement with the theoretical value for two-dimensional, interface-controlled growth. The experimental date allowed to derive the values of ΔE = 581 kJ.mole^?1 for the overall activation energy of the crystallization reaction, Δ_cr = 151 kJ.mole^?1 for the energy of critical nucleus formation and ΔE_m = 143 kJ.mole^?1 for the activation energy of atomic motion.     

The forced magnetostriction of nickel at 4.2 K

The forced volume magnetostriction of polycrystalline nickel at 4.2 K has been determined with a relative accuracy of 2 × 10^?2. Combining our result with previous data on the forced magnetostriction, we derive for the forced magnetostriction constants: h'₀ = (40 ± 1) × 10^?8T^?1, h'₁ = (-95 ± 2) × 10^?8T^?1, h'₂ = (-19 ± 2) × 10 ^?8T^?1.     

Observation of multi-gap superconductivity in GdO(F)FeAs by Andreev spectroscopy

We have studied current-voltage characteristics of Andreev contacts in polycrystalline GdO_0.88F_0.12FeAs samples with bulk critical temperature T _c = (52.5 ± 1) K using break-junction technique. The data obtained can- not be described within the single-gap approach and suggests the existence of a multi-gap superconductivity in this compound. The large and small superconducting gap values estimated at T = 4.2 K are Δ _L = 10.5 ± 2 meV and Δ _s = 2.3 ± 0.4 meV, respectively.     

Intensities of rotational lines in first overtone bands for axially symmetric molecules of the group C3v

The interaction of vibration and rotation is considered in the computation of the intensities of rotational lines in the first overtone bands of axially symmetric molecules of the group C_3v. The calculation utilizes the contact transformation method through first order of approximation as outlines by Hanson and Nielsen. General formulas for the intensities of the lines in the first overtone bands 2ν_n and 2ν_m are obtained, where n and m denote normal modes of species A₁ and E, respectively. It is found that to this order of approximation the usual selection rules ΔJ = 0, ±1 and ΔK = 0 are observed for the parallel overtone band 2ν_n. For the overtone band 2ν_m, the selection rules are more complicated, being ΔJ = 0, ±1; Δl_m = 0 and ΔK = 0, Δl_m = ±2 and $\text{Δ}\text{K = ?1}$, or Δl_m = ±2 and ΔK = ±2.     

Mößbauereffekt in Eisenstilben und FeCl2·H2O

Using Mößbauer effect measurements in the temperature range between 3 °K and 310 °K the magnetic fields at the nucleus in iron-stilbene, FeCl₂·H₂O and FeCl₃ are determined to beH _T=0=(250±10) kOe, (252±18) kOe and (468±10) kOe; a Néel-temperature ofT _N=(23±1) °K is measured for iron-stilbene. The electric quadrupole splittings atT=0 °K for iron-stilbene and FeCl₂ ·H ₂ O, ΔE=(+2.52±0.02) mm/sec and (+2.50±0.05) mm/sec, yield electric field gradients at the iron nucleus ofq _z=+9.7·10¹⁷ V/cm² and +9.6·10¹⁷ V/cm², whereq _z⊥H; Debyetemperatures of θ=162 °K and 188 °K are obtained. The energy of the excited 3d-electron levels in iron-stilbene is estimated to Δ₁=309 cm^?1 and Δ₂=618cm^?1 as deduced from the temperature dependence ofΔE. In contrast to the suggestion ofEuler andWillstaedt bivalence of the iron in ironstilbene is found; its composition is shown to be 4(FeCl₂ ·H ₂O)·stilbene.     

Mercury chalcogenides,zero gap semiconductors2

The alloys of HgTe_1?xSe_x were prepared with x = 0 to 1 in steps of 0.2 using the modified Bridgman technique. Their electrical properties were measured from 1.5° K to 350° K. The experimental data were fitted using the inverted two-band model. This theory fits the measurements in the case of HgTe with a band overlap, E_t, less than 10^-3 eV, and E_g = -0.3 eV at 4.2° K. For the alloys the analysis indicates that E_g and E_t are very close to zero and thus they might be considered as zero gap semiconductors.     

Calculation of chemisorption energies of oxygen on narrow-gap semiconductors

Newns' self-consistent model for hydrogen chemisorption on transition metals is extended to calculate the chemisorption energy ΔE of oxygen on Si, Ge and III–V compounds. ΔE is found to depend on the widths of the energy gap and valence band, the crystal work function and the crystal plane, |ΔE₍₁₀₀₎|>|ΔE₍₁₁₁₎|. In general, larger ΔE's are associated with wider energy gaps.     

Piezoreflectance measurements on GaxIn1−x Sb alloys

Piezoreflective experiments between 77 and 300°K are performed on Ga_x, In_1?x Sb alloys. E_o and E_o + Δ_o transition energies, vs composition are determined. Band gap E_o variations, are obtained in good agreement with the two band dielectric model. The Δ_o splitting is observed to be linear with composition.The fundamental edge temperature coefficient β is also determined, it is found to vary linearly with composition.E_o and E_o + Δ_o energy determination permit one to deduce effective mass and g_e value variation with composition.     

Optical anisotropy of orthorhombic InS

The optical anisotropy of InS single crystals in the range of photon energy from 1.8 to 3.5 eV has been studied by absorption, electroreflectance and wavelength-derivative reflectance measurements. These systematic optical measurements for the polarizations, E//a and E//b, have revealed that the transition at the fundamental absorption edge of InS is allowed for E//b, and there exist three distinct doublet transitions having different selection rules in the photon energy region from 2 to 3.5 eV; Bo and B^'₀doublet allowed only for E//b, A₀ and A^'₀ allowed only for E//a, and E₁ and E^'₁ allowed for both polarizations. The observed results are discussed based on the anisotropic nature of two chemical bonds in InS, cation-cation and cation-anion.     

A tunneling spectroscopy study of the temperature dependence of the forbidden band in Bi2Te3 and Sb2Te3

Tunneling measurements of dI/dV, d ² I/dV ², and d ³ I/dV ³ were formed along the C ₃ axis (normally to layers) for Bi₂Te₃ and Sb₂Te₃ layered semiconductors in the temperature range 4.2<T>29 5 K. Temperature dependences of the forbidden band energy E _g were obtained. The forbidden band energy in Bi₂Te₃ was 0.20 eV at room temperature and increased to 0.24 eV at T=4.2 K. The E _g value for Sb₂Te₃ was 0.25 eV at 295 K and 0.26 eV at 4.2 K. The distance between the top of the higher valence band of light holes and the top of the valence band of heavy holes situated lower was found to be ΔE _V≈19 meV in Bi₂Te₃; this distance was independent of temperature. The conduction bands of Bi₂Te₃ and Sb₂Te₃ each contain two extrema with distances between them of ΔE _c≈25 and 30 meV, respectively.     

Microwave photoresistance of a double quantum well at high filling factors

The effect of millimeter wave radiation on the electronic transport in a GaAs double quantum well at a temperature of 4.2 K in a magnetic field of up to 2 T has been studied. Resistance (conductance) oscillations have been shown to appear in the two-dimensional electronic system under investigation at high filling factors. The magnetic field positions of the oscillation maxima are determined by the condition Δ_SAS/? = lω_c, where Δ_SAS = (E ₂ ? E ₁) is the size quantization sublevel splitting in the quantum well, ω_c is the cyclotron frequency, and l is a positive integer. It has been found that the microwave field substantially modifies the oscillations in the double quantum well, which results in alternating two-frequency oscillations of photoresistance with the inverse magnetic field.     

Collective excitations in the 1-D-ferromagnet CsFeCl3 with singlet ground state

By means of inalastic neutron scattering we have determined the dispersion relation of the magnetic excitations in CsFeCl₃ at different temperatures.The dispersion in c-direction, along the Fe-chains is typically ferromagnetic and in the hexagonal plane antiferromagnetic. Due to the lack of an applicable theory the data were parametrized by the simple heuristic formula:?ω = [2J[1 - cos πq_c] [A + 2J(1 - cos π)q_c)] + [C + J' (1.5 + γ(q))]²]^{$\text{1}\text{2}$}The gap was found to be C = 0.148 THz, the easy plane anisotropy A = 0.308 THz, the ferromagnetic interaction J = 0.148 THz and the antiferromagnetic interaction J' = -0.04 THz. At 1.25 K all excitations had a width smaller than the instrumental resolution ΔE = 0.025 THz. These results can be interpreted as follows: CsFeCl₃ is a singlet ground state system with strong ferromagnetic interaction J along the crystallographic c-axis and weak antiferromagnetic interaction J' in the plane perpendicular to c.In addition we have measured the influence of a magnetic field along the hexagonal c-axis. The splitting found agrees with the assumed level scheme yielding g = 2.5 for the first excited level.     

Infrared modulated reflectance spectra of n and p type gallium antimonide and n type indium antimonide

We have observed the modulated reflectance spectra of n and p type GaSb at 300, 80, and 5 K from 0.56 to 2 eV. The modulated reflectance of intrinsic n type InSb was measured at 80 K from 0.2 to 2 eV. The “dry sandwich” vapor deposition technique was used to make the electroreflectance (ER) samples. The low-temperature spectrum of the undoped p type GaSb sample shows three peaks at the band edge that could be associated with transitions from the top of the valence band, the light (0.903 eV) and heavy (1.014eV) hole state Fermi levels to the conduction band. The energies of the observed peaks are in agreement with the Fermi level determination from Hall effect and Faraday rotation measurements. This modulation mechanism is based on band population effects. The ER signal of InSb under flatband condition at 80 K has five half oscillations at the direct band gap. The contribution of piezoelectric strain to ER is present since the dc bias required to achieve flatband condition is different at the band gap than at E₁. The ER signal corresponding to the direct gap energy E₀ and to the spin-orbit energy E₀ + Δ₀ was determined in the n and p type samples of GaSb at different temperatures. We have measured the intrinsic energy gap in GaSb at room temperature. E_g = 0.74 eV. The corresponding spin-orbit splitting was found to be Δ₀ = 0.733 ± 0.002 eV.     

Raman E 1 and E 1 + Δ1 resonances in a system of unstrained germanium quantum dots

The positions and shapes of the Raman E ₁ and E ₁ + Δ₁ resonances of optical phonons are studied as functions of the size of unstrained germanium quantum dots. The quantum dots are grown by molecular-beam epitaxy in GaAs/ZnSe/Ge/ZnSe structures on GaAs(111) wafers. The positions of the E ₁ and E ₁ + Δ₁ resonances are found to shift by at most 0.3 eV. This shift is shown to be well described in terms of a cylindrical model using the quantization of the spectrum of bulk electron-hole states in germanium that form an exciton in a two-dimensional critical point. The fact that the peaks of the E ₁ and E ₁ + Δ₁ resonances appear separately has been detected for the first time, and it is related to the transformation of the interband density of states into a delta function because of spectrum quantization. An increase in the resonance amplitudes in quantum dots as compared to the bulk case is related to the degeneracy multiplicity of the exciton state in the (111) direction.     

Memory switching of germanium tellurium amorphous semiconductor

The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔE_σ, the room temperature electrical conductivity σ_RT and the pre-exponential factor σ₀ were measured and validated for the tested sample. The conduction activation energy ΔE_σ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field E_th decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔE_th is calculated. Measurements of the dissipated threshold power P_th and the threshold resistance R_th were carried out at TOP point at different temperatures of the samples. The activation energies ΔE_R and ΔE_P caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system.