Photo-synthesis of As3S2 crystal from AsAs2S2 mixture

Existence of As₃S₂ compound which is stable in a certain temperature range higher than room temperature has been confirmed in AsAs₂S₂ system. Photo-synthesis effect of As₃S₂ crystal from As and As₂S₂ mixture, namely light induced conversion from a crystalline state to another crystalline state, has also been investigated.     

Spin reorientation and magnetization anomaly in Er2Fe14B and Tm2Fe14B

Static magnetic measurements have been carried out on single crystals of Er₂Fe₁₄B and Tm₂Fe₁₄B in a temperature range between 77 and 590 K. Spin reorientation phenomena have been found in both compounds slightly above room temperature. In Er₂Fe₁₄B, the easy direction of magnetization changes from [100] to [001] at 316 K as temperature increases, and Tm₂Fe₁₄B from [100] to [001] at 310 K. Anomalously large anisotropy in the saturation magnetization has been detected around the spin reorientation temperature.     

非晶态锂离子导体B2O3-0.7Li2O-0.7LiCl-xAl2O3

木文研究了Al₂O₃对B₂O₃-0.7Li₂O-0.7LiCl非晶态的形成和电学性能的影响,我们发现:加入适量的Al₂O₃后,无需借助液氮骤冷技术,直接将熔体倾倒在室温下的紫铜板上就很容易形成大块非晶锂离子导体B₂O₃-0.7Li₂O-0.7LiCl-xAl₂O₃。Al₂O₃的加入使B₂O₃-0.7Li₂O-0.7LiCl的电导率有所降低,但在高温下不太明显,电导激活能略微升高,实验发现:Al₂O₃含量x=0.03是较合适的剂量,较容易形成大块非晶态,对电导率的影响也不大。 关键词：     

Anisotropy of the electron momentum distribution in Bi2Sr2CaCu2O8+δ superconductor studied by positron annihilation

The temperature dependent (30-300 K) Doppler broadening of the positron annihilated γ-radiation measurement has been investigated on single crystalline Bi₂Sr₂CaCu₂O_8+δ (Bi-2212) high T_c superconducting samples along two different crystallographic orientations. It has been observed that throughout the temperature range the electron momentum distribution has a larger value along the crystallographic c-axis than in the a-b plane. The temperature dependent Doppler broadened positron annihilation γ-radiation lineshape analysis shows a step like increase of S-parameter at the temperature region 92-116 K.     

Phase transition in Cd2Ta2O7 and the Cd2Nb2−xTaxO7 series

A phase transition has been discovered in Cd₂Ta₂O₇ near 200 K which is about the same temperature at which Cd₂Nb₂O₇ is known to become ferroelectric. However, Cd₂Ta₂O₇ does not become ferroelectric below this transition. The nature of this transition was also studied in the Cd₂Nb_2?xTa_xO₇ series using low temperature X-ray, SHG, and DSC techniques.     

Tl2Ba2Ca2Cu3Oy超导体低场钉扎力的性质

测量了Tl₂Ba₂Ca₂Cu₃O_y超导体多晶样品在不同外磁场和不同温度下的磁滞性质,利用临界态方程求出有效钉扎力随外磁场及温度的变化,有效钉扎力包括晶粒界面处及晶粒内的贡献,发现有效钉扎力有峰效应,峰位置随温度降低向较高磁场移动,峰效应被解释为两种钉扎机制产生的,即两种机制的贡献与外磁场的关系不同,还讨论与这些结果有关的问题。 关键词：     

Microstructure and interfacial properties of HfO2-Al2O3 nanolaminate films

High-k HfO₂-Al₂O₃ composite gate dielectric thin films on Si(1 0 0) have been deposited by means of magnetron sputtering. The microstructure and interfacial characteristics of the HfO₂-Al₂O₃ films have been investigated by using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and spectroscopic ellipsometry (SE). Analysis by XRD has confirmed that an amorphous structure of the HfO₂-Al₂O₃ composite films is maintained up to an annealing temperature of 800 °C, which is much higher than that of pure HfO₂ thin films. FTIR characterization indicates that the growth of the interfacial SiO₂ layer is effectively suppressed when the annealing temperature is as low as 800 °C, which is also confirmed by spectroscopy ellipsometry measurement. These results clearly show that the crystallization temperature of the nanolaminate HfO₂-Al₂O₃ composite films has been increased compared to pure HfO₂ films. Al₂O₃ as a passivation barrier for HfO₂ high-k dielectrics prevents oxygen diffusion and the interfacial layer growth effectively.     

MgB2和Mg0.93Li0.07B2的电阻率与霍尔效应研究

测量了MgB₂和Mg_0.93Li_0.07B₂的电阻率ρ(T)与霍尔系数R_H(T)的温度依赖关系.电阻率的测量结果表明,MgB₂和Mg_0.93Li_0.07B₂的正常态电阻率与温度有平方的依赖关系.MgB₂和Mg_0.93Li_0.07B_{2关键词： 电阻率 霍尔效应}     

Li2SO4—Li2B2O4,Li2SO4—(NH4)2SO4赝二元系相图及离子导电性研究

本文用差热分析和X射线衍射方法对Li₂SO₄-Li₂B₂O₄和Li₂SO₄-[NH₄]₂SO₄两个赝二元系相图进行了研究。Li₂SO₄-Li₂B₂O₄是共晶体系,共晶温度为720℃ 关键词：     

Semiconductor-metal transition in novel Cd2Os2O7

Cd₂Os₂O₇ has been prepared for the first time and has the pyrochlore structure with a cubic cell edge of 10.17 Å at room temperature. Electrical, magnetic, and DSC measurements on single crystals of this compound show a sharp transition at 225 K which we interpret to be an electronic, second-order, metal-semiconductor transition. The low-temperature semiconducting phase is probably antiferromagnetic.     

Intrinsic magnetic properties of In2O3 and transition metal-doped-In2O3

This paper reports on the influence of the sintering temperature and atmosphere and transition-metal doping on the magnetic properties of nanocrystalline and bulk In₂O₃. Undoped nanocrystalline In₂O₃ is diamagnetic whatever the sintering temperature and atmosphere. All single-phase transition-metal-doped In₂O₃ samples are paramagnetic, with a paramagnetic effective moment originating from weakly interacting transition metal ions. No trace of ferromagnetism has been detected even with samples sintered under argon, except extrinsic ferromagnetism for samples with magnetic dopant concentrations exceeding the solubility limit.     

The chemisorption of CO,CO2, C2H2, C2H4, H2 and NH3 on the clean Fe(100) and (111) crystal surfaces

The chemisorption of small molecules (CO, CO₂, C₂H₂, C₂H₄, H₂ and NH₃) has been studied on the clean Fe(110) and (111) crystal faces by low-energy electron diffraction (LEED) and thermal desorption. C₂H₄ and C₂H₂ yield the same sequence of surface structures that change with temperature and crystal orientation. CO and CO₂ chemisorption similarly results in the formation of the same types of surface structures that change with surface temperature and crystal orientation. Ammonia forms several ordered surface structures on both iron crystal faces. All of the molecules decompose as a function of temperature on the iron surfaces as indicated by the Auger and thermal desorption spectra.     

Study of magnetotransport in double-layered La1.4Ca1.6Mn2O7 manganite: Presence of nano-ferromagnetic domains in paramagnetic matrix

Double-layered manganite La_1.4Ca_1.6Mn₂O₇ has been synthesized using the solid-state reaction method. It had a metal-to-insulator transition at temperature T_M1≈127 K. The temperature dependence of ac susceptibility showed a broad ferromagnetic transition. The two-dimensional (2D)-ferromagnetic ordering temperature (T_C2) was observed as ≈245 K. The temperature dependence of its low-field magnetoresistance has been studied. The low-field magnetoresistance of double-layered manganite, in the temperature regions between T_M1 and T_C2, has been found to follow 1/T⁵. The observed behaviour of temperature dependence of resistivity and low-field magnetoresistance has been explained in terms of two-phase model where ferromagnetic domains exist in the matrix of paramagnetic regions in which spin-dependent tunneling of charge carriers occurs between the ferromagnetic correlated regions. Based on the two-phase model, the dimension of these ferromagnetic domains inside the paramagnetic matrix has been estimated as ∼12 Å.     

Magneto-optical measurement on the layer type magnet (CH2)2(ND3)2MnCl4

The linear birefringence (LB) of the antiferromagnet (CH₂)₂(ND₃)₂MnCl₄ has been measured as a function of temperature and in magnetic fields up to 100 kOe. The temperature dependence of the LB points to a pronounced two dimensional magnetic behaviour. No anomaly corresponding to the effect of three dimensional ordering could be detected at T_N. In theffield dependent measurements the spin flop at H_SF = 33.6 ± 1 kOe (T = 4K) could clearly be detected.     

Adsorption of H2S,H2O and O2 on Si(111) surfaces

Electron energy-loss spectroscopy has been applied to the study of Si(111) surfaces covered with H₂S, H₂O and O₂ at room temperature and the surfaces annealed at ～ 600°C. The experimental results strongly suggest that H₂S and H₂O adsorb in the molecular states at room temperature. It is proposed that O₂ is first adsorbed in a molecular state, then adsorbs as atoms, and finally oxidizes forming SiO₂.     

Structure and magnetic properties of a new single-molecule magnet [Mn11Fe1O12 (CH3COO)16(H2O)4].2CH3COOH.4H2O

A new single-molecule magnet [Mn₁₁Fe₁O₁₂ (CH₃COO)₁₆(H₂O)₄]?2CH₃COOH?4H₂O (Mn₁₁Fe₁) has been synthesized.The structure has been studied by the single crystal x-ray diffraction. The difference of Jahn--Teller distortion between Fe³⁺ and Mn³⁺ ion reveals that Fe³⁺ ion substitutes for Mn³⁺ ion on the Mn(3) sites in the Mn₁₂ skeleton. The temperature dependence of the magnetization gives a blocking temperature T_B=1.9K for Mn₁₁Fe₁. Based on the magnetization process analysis of the crystal at T=2K, we suggest that Mn₁₁Fe₁ has the ground state with a total spin S= 11/2.     

Fluorescence of Mn2+ in CaCO3

The fluorescence of Mn²⁺ ion as impurity in CaCO₃ has been investigated. Emission bands from the ⁴D(E_g), ⁴D(T_2g) and ⁴G(T_1g) levels have been observed. The analysis of excitation and emission spectra has allowed to obtain the values of field strength (Dq) for the excited energy levels of Mn²⁺ in CaCO₃ lattice. The temperature dependence of excitation and emission spectra yield an activation energy for thermal quenching of luminescence very close to theoretical calculation. The behaviour of luminescence lifetime with temperature has also been obtained.     

Electronic structure of non-centrosymmetric AgCd2GaS4 and AgCd2GaSe4 single crystals

X-ray photoelectron core-level and valence-band spectra for pristine and Ar⁺-ion irradiated (0 0 1) surfaces of AgCd₂GaS₄ and AgCd₂GaSe₄ single crystals grown, respectively, by the Bridgman method and the method of direct crystallization have been measured in the present work. The X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of (0 0 1) surfaces of AgCd₂GaS₄ and AgCd₂GaSe₄ single crystals. Electronic structure of AgCd₂GaS₄ has been calculated employing the full potential linearized augmented plane wave method. For the AgCd₂GaS₄ compound, the X-ray emission bands representing the energy distribution of the valence Ag d-, Cd d-, Ga p- and S p-like states were recorded and compared on a common energy scale with the XPS valence-band spectrum. The theoretical and experimental data regarding the occupation of the valence band of AgCd₂GaS₄ were found to be in excellent agreement to each other. Second harmonic generation (SHG) efficiency of AgCd₂GaS₄ by using the 320 ns CO laser at 5.5 μm has been recorded within the temperature range 80–300 K. Substantial increase of the photoinduced SHG which in turn is substantially dependent on the temperature has been detected for the AgCd₂GaS₄ compound.     

Ionic conductivity of sodium zinc silicates in the compositional region Na2ZnSiO4-Na2ZnSi2O6

The compositional region Na₂ZnSiO₄-Na₂ZnSi₂O₆ has been investigated by means of X-ray powder diffraction measurements on samples quenched from elevated temperatures. Four different phases have been observed. The powder pattern of the high and low temperature modification of Na₂ZnSiO₄ could thus be indexed on the basis of an orthogonal cell, while for Na_1.6Zn_0.8Si_1.2O₄ a cubic unit cell could be used. These phases are all structurally related to high-cristobalite. The powder pattern of the compound Na₂ZnSi₂O₆ has been indexed on the basis of a monoclinic unit cell. The variation of the ionic conductivity x in Na_xZn_0.5xSi_2-0.5xO₄ (1.25 ? x ? 2) has been determined. The best conductivity, 1 × 10^-2 (Ω cm)^-1 at 600 K is found for the composition Na_1.85Zn_0.925Si_1.075O₄.     

Superconductivity of powder-in-tube Sr0.6K0.4Fe2As2 wires

Nb-sheathed Sr_0.6K_0.4Fe₂As₂ superconducting wires have been fabricated using the powder-in-tube (PIT) method for the first time and the superconducting properties of the wires have been investigated. The transition temperature (T_c) of the Sr_0.6K_0.4Fe₂As₂ wires is confirmed to be as high as 35.3 K. Most importantly, Sr_0.6K_0.4Fe₂As₂ wires exhibit a very weak J_c-field dependence behavior even the temperature is very close to T_c. The upper critical field H_c2(0) value can exceed 140 T, surpassing those of MgB₂ and all the low temperature superconductors. Such high H_c2 and superior J_c-field performance make the 122 phase SrKFeAs wire conductors a powerful competitor potentially useful in very high field applications.