超窄带和多通道窄带光子晶体滤波器

构造了形如(AB)^mB^n(BA)^m的一维光子晶体，并利用光学传输矩阵法对这种光子晶体进行了数值模拟计算，对其光子能带特性进行了分析。计算结果表明，当m=6、m=4，而n变化时，在一定的波段范围内，在这种结构光子晶体的禁带区内分别获得了一个和多个很窄的透过峰：这种结构的光子晶体可以用来制作超窄带滤波器和多通道窄带滤波器，有望在光通信超密度波分复用技术和光学信息精密测量技术中获得广泛应用.     

Narrow transmission bands of quasi-1D comb-like photonic waveguides containing negative index materials

Using the interface response theory, we investigate the band structure and transmission of quasi-1D comb-like photonic waveguides with side branches composed of negative index materials. Numerical results exhibit the existence of discrete modes in band structure. These discrete modes are corresponding to narrow transmission bands which separated by large forbidden band in the transmission spectrum. Meanwhile it is shown that the narrow transmission bands become narrower with the increase of the number of side branches. The above properties are still maintained when the negative index materials are dispersive and lossy.     

Effects of electron-hole excitations in ion-surface collisions

We investigate effects related to electron-hole pair production and atomic level shift in atom scattering at surfaces by using a recently proposed exactly soluble model. We show that electron-hole pair production weakens Stückelberg oscillations and enhances loss of memory of the initial atomic charge state for narrow bands because of the diffusion of an electron or hole captured by the band. Wide band materials tend to display memory loss at lower velocities than do narrow band materials. Allowing the atomic energy level to shift above the Fermi energy tends to reduce memory loss.     

含各向异性左手材料一维光子晶体的传输特性分析

采用光学传输矩阵方法,研究了由各向异性左、右手材料交替排列构成的一维人工周期结构的带隙结构和传输特性,讨论了反射率随入射角度的变化关系。结果表明,含各向异性左手材料的光子晶体比传统的光子晶体有更宽的禁带;含各向异性左手材料的一维光予晶体具有更好的角度特性,可以用来实现对某一低频波段的全方位反射;通过适当选取左手材料的参数,禁带中会出现狭窄的透射峰。     

窄禁带半导体材料中共振缺陷态测量

运用量子电容谱测量技术，在窄禁带半导体材料InSb和HgCdTe价带和导带中分别发现了两个共振缺陷态．根据建立的实验模型研究了这些共振缺陷态的特性 关键词：     

Narrow band gap group III-nitride alloys

Recent results on the properties of narrow gap group III-nitrides and their alloys are reviewed. It is shown that InN with the energy gap of 0.7 eV exhibits classical characteristics of a narrow gap semiconductor with strongly nonparabolic conduction band and an energy dependent electron effective mass. With the new discovery, the direct band gaps of the group III-nitride alloys span an extremely wide energy range from near infrared in InN to deep ultraviolet in AlN offering possibilities for new device applications of these materials. We also discuss properties of dilute group III-N–V alloys in which incorporation of a small amount of nitrogen results in a dramatic band gap reduction. All the unusual properties of the alloys are well described by a band anticrossing model that considers an interaction between localized nitrogen states and the extended states of the conduction band.     

Narrow transmittance peaks in a multilayered microsphere with a quasiperiodic left-handed stack

We studied the photon spectrum in coated microspheres with alternating quasiperiodic layers having left-handed (LH) materials included. It is found that the band gap (spectral zone of nearly zero transmittancy) in such a system is strongly enhanced. At an increase of the quasiperiodicity parameter γ, the boundaries of the spectral band gaps acquire the intended shape. When γ exceeds the inverse golden mean value, a structure with extremely narrow separated resonant peaks with nearly complete transmittance arises. At increased γ, such resonances migrate to the center of the band gap. This effect allows creating optical filters with extremely narrow passbands.     

一种新型红外低目标特征材料

现代探测系统由单一工作模式到复合工作模式的转变,对低目标特征材料的光谱特性提出了某些特殊要求。在文章中,基于一维掺杂光子晶体,设计了一种新型红外低目标特征材料,并研究了其复合结构对反射光谱的影响。发现在一定条件下,可以在反射光谱中的一个宽的高反射率波段内形成局部的狭窄低反射率区,从而为新型红外功能材料的研制提供了参考。     

5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4–7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV–VI) narrow band gap materials.     

Effect of Band Nonparabolicity on the Inter Band Tunneling in Semiconductors

A simple yet generalized theory is developed to study inter band tunneling property of narrow band gap III–V compound semiconductors. The band structures of these low band gap semiconductors with sufficiently separated split-off valance band are usually described by the three energy band model of Kane, so this has been adopted here for the analysis of interband tunneling property in the case of InAs, InSb, and In_1-xGa_xAs_yP_1-y lattice matched to InP as representative direct band gap semiconductors having varied split-off valence band compared to their bulk state band gap energy. It has been found that the magnitude of tunneling rate from heavy hole decreases with increasing band nonparabolicity and the impact is more significant at high electric field in the three-band model of Kane than those with simple parabolic energy band approximations reflecting the direct influence of energy band parameters on inter band tunneling transitions. With proper consideration of band nonparabolicity, the results of the analysis of tunneling rate of these narrow gap materials show significant deviations from the results when simple parabolic band approximation is considered. The exact physical basis of the sources of deviation in the nonparabolic case from the corresponding parabolic band approximations is discussed in association to band coupling effect, transverse energy dependence, and the interplay between them. Moreover, under certain limiting conditions, our results reduce to the well-known results of parabolic band approximation and thus providing an indirect test to the accuracy of our generalized formulations.     

薄膜滤光片的光学稳定性研究

薄膜滤光片中心波长的稳定性是非常重要的参量.这不仅取决于膜层的聚集密度,而且与薄膜材料和基板的折射率温度系数及线性膨胀系数有着紧密的关系.本文根据滤光片的实验参量,分析计算了它们对滤光片中心波长漂移影响的大小,并提出了改善稳定性的途径.     

Classification of hydrides according to features of band structure

Band structure of hydrides has been studied by density functional calculations. From analysis of band structures, it is found that, similar to semiconductors, some hydrides possess open fundamental band gap, and can be classified according to the following three characteristic features. The first is based on the value of the fundamental band gap and, therefore, the hydrides have been classified as narrow or wide band gap materials. The second feature is based on a comparison of the relative location in k space of the bottommost conduction band and topmost valence band (VB). Thus, hydrides can be classified as either direct or indirect band gap materials. The third feature is based on the origin of the topmost valence band and depends on the dominant contribution of s-, p-, and d-electrons to the topmost VB. According to this criterion, hydrides can be classified as type s, p, d or hybridised materials. This classification will be useful in the application of hydrides for the construction and processing of electronic devices within the framework of the recent innovations in ‘hydride electronics’.     

光子晶体超窄带滤波器

本文利用光学传输矩阵法研究了一种类似于谐振腔结构的光子晶体.研究发现在这种光子晶体的光子带隙的中央存在一个极窄的透光窗口,窗口的宽度在红外波段1500nm附近可以做到0.0001nm以下,窗口内的透光率峰值可以接近100%,窗口以外的区域的透光率可以做到0.01%以下.通过改变所研究结构中的周期厚度、中间夹层厚度、两边光子晶体的周期重复数和波的入射角可以改变窄带透过窗口的位置和窄带的宽度.这种光子晶体可以用来制作超窄带滤波器,有望在光通信超密度波分复用技术和光学信息精密测量技术当中获得应用.     

Polymerization of Silicon-Doped Heterofullerenes： an Ab Initio Study

We perform the calculations on geometric and electronic structures of Si-doped heterofullerene C5oSi10 and its derivatives, a C40Si20-C40Si20 dimer and a C40Si20-based nanowire by using density-functional theory, The optimized configuration of the C40Si20-based nanowire exhibits a regular dumbbell-shaped chain nanostructure. The electronic structure calculations indicate that the HOMO-LUMO gaps of the heterofullerene-based materials can be greatly modified by substitutionally doping with Si atoms and show a decreasing trend with increase cluster size. Unlike the band structures of the conventional wide band gap silicon carbide nanomaterials, the C40Si20- based nanowire has a very narrow direct band gap of 0.087eV.     

Low frequency phononic band structures in two-dimensional arc-shaped phononic crystals

The low frequency phononic band structures of two-dimensional arc-shaped phononic crystals (APCs) were studied by the transfer matrix method in cylindrical coordinates. The results showed the first phononic band gaps (PBGs) of APCs from zero Hz with low modes. Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials. These properties can be efficiently used in a structure for low frequencies that are forbidden, or in a device that permits a narrow window of frequencies.     

外磁场作用下一维光子晶体的光传输特性

采用光学传输矩阵方法,研究了外磁场作用下一维光子晶体的光传输特性.在外磁场作用下,介质介电函数在回旋频率ω.附近受到强烈的调制,使组分材料的色散关系发生明显改变,导致光子晶体的能带发生变化,透射谱出现复杂结构.在光子带隙中出现窄通带,窄带中的光是局域的.这表明,在不改变光子晶体组分材料的条件下,可以通过改变外磁场的大小,调制光子晶体的能带及其光传输性质.     

Transition-metal-substituted indium thiospinels as novel intermediate-band materials: prediction and understanding of their electronic properties

Results of density-functional calculations for indium thiospinel semiconductors substituted at octahedral sites with isolated transition metals (M=Ti,V) show an isolated partially filled narrow band containing three t2g-type states per M atom inside the usual semiconductor band gap. Thanks to this electronic structure feature, these materials will allow the absorption of photons with energy below the band gap, in addition to the normal light absorption of a semiconductor. To our knowledge, we demonstrate for the first time the formation of an isolated intermediate electronic band structure through M substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum. This electronic structure feature could be applied for developing a new third-generation photovoltaic cell.     

碲化铋薄膜载能粒子相互作用的超快研究

碲化铋禁带宽度非常窄而具有高电导率和塞贝克系数,同时具有低热导率,成为已知室温下优值系数最高的热电材料。已有研究表明,纳米薄膜和超晶格是进一步提高材料热电性能的可行途径。因此超快研究碲化铋纳米薄膜中载能子间的相互作用过程对开发高性能热电材料有重要意义。本文采用飞秒激光泵浦-探测技术,实验研究了沉积在硅基底上厚度为100 nm碲化铋薄膜中各载能粒子的相互作用过程。通过改变延迟时间步长,分别观察到价带电子被光子激发跃迁至导带,激发电子在导带内与声子的能量弛豫及导带电子与空穴复合跃迁至价带,并将能量传递给声子导致声子温度升高的过程。此外,还观察到热应力产生的声波,并据此得到了碲化铋薄膜中纵波声速为2649 m s^-1。     

黏弹性材料的动态力学特性及其对覆盖层吸声性能的影响

本文利用标准化动态力学测量手段获得了某种高分子聚合物的动态杨氏模量,并根据时温等效原理对动态杨氏模量与声学测量在频段上的差异加以分析和转换,得到了500—7500 Hz频率范围内该黏弹性材料杨氏模量随频率变化的特性.基于所测得动态杨氏模量,采用有限元方法分析了均匀黏弹材料的吸声性能,并将仿真结果与样品声管实验数据进行对比,验证了测试所得参数的准确性.进一步仿真分析了含有局域共振结构的声学覆盖层吸声性能,并讨论了黏弹性材料的动态特性对其吸声性能的影响,提出了改进水声覆盖层低频宽带吸声特性的建议.     

Nanodopant-induced band modulation in AgPb(m)SbTe(2+m)-type thermoelectrics

The structure-property relation is a key outstanding problem in the study of nanocomposite materials. Here we elucidate the fundamental physics of nanodopants in thermoelectric nanocomposites XPb(m)YTe(2+m) (X = Ag, Na; Y = Sb, Bi). First-principles calculations unveil a sizable band-gap widening driven by nanodopant-induced lattice strain and a band split-off mainly caused by the spin-orbit interaction in nanodopant. Boltzmann transport calculations on PbTe with modified band mimicking nanodopant-induced modulations show significant but competing effects on high-temperature electron transport behavior. These results offer insights for understanding experimental findings and optimizing thermoelectric properties of narrow band-gap semiconductor nanocomposites.