Composition dependence of fundamental edge in Ga1−xAlxSb alloys

The fundamental edge of Ga_1-xAl_xSb alloys has been measured at room temperature. Piezomodulated reflection and transmission measurements permited to obtain the variation with composition of the Γ_15v ? Γ_1c and Γ_15v ? X_1c gaps and to deduce for the direct indirect crossover composition a value of x_c = 0.4 ± 0.02.     

Indirect measurements of the Jahn-Teller quenched spin-orbit splitting in the 5T2g-state of KMgF3:Fe2+

The energy separation of the first excited spin-orbit States Γ_3g, Γ_4g from the Γ_5g ground state, in the orbital ⁵T_2g triplet state of Fe²⁺ in KMgF₃, has been estimated from temperature dependence measurements on the 7860 cm^-1 zero-phonon-line (ZPL) transition from Γ_5g to the orbital ⁵E_g doublet state. Using a simplified crystal field energy level model, we find the Γ_5g Γ_3g, Γ_4g separation to be ～30 cm^-1, indicating that the vibronic Jahn-Teller coupling is considerably stronger in KMgF₃:Fe²⁺ than in MgO:Fe²⁺. Far infrared absorption data on KMgF₃:Fe²⁺ in magnetic fields up to 6T, are found to be consistent with this interpretation.     

Effects of high hydrogen dilution ratio on optical properties of hydrogenated nanocrystalline silicon thin films

Hydrogenated nanocrystalline silicon thin films were prepared by plasma enhanced vapor deposition technique. In our experiment, hydrogen dilution ratio R_H was changed mainly, while the other parameters, such as the radio frequency power, the direct current bias value, the chamber pressure, the total gas flow and the substrate temperature were kept constant. The film's surface topography was gained by AFM. The chemical bond was confirmed by Fourier transform infrared spectra. The optical properties were characterized by transmission spectra. To consider absorption peak of stretching vibration mode of SiH₃ at 2140 cm⁻¹ and to reduce the calculation error, a hydrogen content calculation method was proposed. Effects of hydrogen dilution ratio on the deposition rate v and hydrogen content C_H were investigated. The bonding mode and the force constants k of chemical bond, the structural factor f in films were changed by high hydrogen dilution ratio, which gave rise to the shift of absorption peak of infrared stretching mode and the decrease of optical band gap E_g.     

Enhancement of waves at rotational oscillations of a liquid

The generation of coherent optical phonons in an antimony film has been directly observed by the femtosecond electron diffraction method. The sample has been excited by a femtosecond laser pulse (λ = 800 nm) and probed with a pulsed photoelectron beam. Oscillations of the intensity corresponding to vibration frequencies of optical phonons excited by the laser have been observed in the obtained diffraction patterns: totally symmetric (A_1g) and twofold degenerate (E_2g) phonon modes of antimony and their combinations.     

Raman studies of lattice dynamics in 1T-TiSe2

Raman scattering measurements were carried out on 1T-TiSe₂ above and below the phase transition temperature. Below _c many new lines appear, which are the Γ-point phonon modes folded from the original zone boundary points L, M and A due to the formation of the 2a₀ × 2a₀ × 2c₀ superlattice. Among them the strong A_1g line at 119 cm^?1 and the E_g line at 78 cm^?1 at 11 K show softening, as the temperature approaches to T_c, but the modes become overdamped before the energies go to zero.     

Electron paramagnetic resonance in Y1−cH1.92:Erc

We have investigated the EPR of isotopically enriched ¹⁶⁸Er³⁺ in Y_1?cH_1.92:Er_c where c = 100 and 1400 ppm, at both 1.4 and 9 GHz and between 1.5 and 50 K. Resonance lines were observed from Er³⁺ ions in both sites of cubic symmetry and sites of axial symmetry. We determine the numbers of Er³⁺ in cubic, and C_4v axial symmetry to be in the ratio 2:1. The cubic site resonance line is at g = 6.85 ± 0.07 and is attributed to a Γ₇ doublet. The linewidth has a linear thermal broadening of 3.9 ± 0.05 gauss K^-1 below circa 7 K. From the nonlinear thermal broadening above this temperature we determine the first excited state, in the cubic crystal field scheme, to be a Γ₈ at 35 ± 10 K above the Γ₇ ground state. We have investigated the origins of the (T = 0) residual linewidth for the ions in cubic symmetry, and conclude there to be a small but significant contribution due to unresolved transferred hyperfine structure from the surrounding hydrogen nuclei.     

Increase in the probability of passing molecules through a cooled multichannel plate as induced by a high-power infrared laser

It has been found that molecules (e.g., SF₆, CF₃I) excited in a molecualr beam by intense infrared laser radiation into high vibrational states (with energy E _v ≥ 0.5–2.0 eV) pass through a multichannel metal plate, which is cooled to T _s ? 80–85 K and inclined to the beam axis, much more efficiently than unexcited (vibrationally cold) molecules. This property provides the possibility of separating excited and unexcited molecules in the beam. The method is described and the first experimental results are reported.     

Modulation of direct and indirect gaps in piezotransmission experiments

Piezomodulation spectroscopy of direct and indirect transitions in GaAs_1-xP_x is investigated. It is shown that, due to the different values of the deformation potential of the Γ_1c and X_1c minima, the strain induced modulation of these transitions are out of phase.     

Temperature dependence of hole saturation velocity in silicon

Thep ⁺ np ⁺ diode is used to determine the hole drift velocity versus field curves in silicon as a function of temperature. By taking the analytical expression of the hole drift velocity,v=v _m (E/E _c )/(1+E/E _c ),v _m andE _c are obtained in the temperature range from 210–420 K.v _m varies from 1.04×10⁷ cm/sec at 210 K to 1.11×10⁷ cm/sec at 420 K, whileE _c increases from 1.05×10⁴ V/cm at 210 K to 5.3×10⁴ V/cm at 420 K. The curve at 300 K is very close to the result of Norris and Gibbons.     

Spectroscopy of molecular ions: Laser induced predissociation of O 2 +

The technique of laser induced predissociation and laser induced fluorescence is applied to study spectra of gas-phase molecular ions. The main feature of the experiment is a beam of mass selected molecular ions illuminated by a pulsed dye laser. Over an extended range of excitation energies spectroscopic information can be obtained about positive and negative ions including transient species. As a first result we present predissociation spectra of O ₂ ⁺ ,b ⁴ bE _g ^? ?a ⁴ π _u Δv=3 andgDv=2 which can well be simulated by calculated spectra assuming a rotational ion temperature of 300δK.     

EXAFS measurements of bond-stretching force constants in arsenic and arsenic compounds

The Einstein frequency ν_E obtained from temperature-dependent EXAFS measurements for the bond between an arsenic atom and a nearest neighbor in arsenic and certain arsenic halides and chalcogenides is considered. It is shown theoretically that in these materials ν_E should be approximately equal to the “natural” frequency of the bond, and hence that ν_E² is proportional to the bond-stretching force constant ⨍_r. Experimental EXAFS measurements on crystalline (c-) AsBr₃ and AsI₃, glassy (g-) As₂S₃ and As₂Se₃, and amorphous (a-) As yield force constants in reasonable agreement with those obtained from Raman and infrared studies.     

Laser excited Raman spectra of Gr. VI semiconducting compounds

Raman spectra of hexagonal layer compounds MoS₂, MoSe₂ and MoTe₂ were excited by a HeNe laser (6328Å). All the Raman active long-wave-length phonon frequencies were determined. These are A_1g, E¹_2g, E_1g and E²_g. The frequencies decrease as we pass from sulphur to tellurium and the quasiacoustical mode E²_2g has the lowest frequency. A comparison of the results with infrared spectra shows that the i.r. active mode for E ⊥ C is degenerate with one of the Raman active modes in the basal plane for all the compounds.     

Differential thermal analysis and nuclear quadrupole resonance study on polymorphic 1,4-dichlorobutane

Differential thermal analysis (DTA), and the ³⁵Cl nuclear quadrupole resonance (NQR) frequency (v _Q ) and line width (Δv _Q ) were measured as a function of the temperature in solid 1,4-Dichlorobutane (DCB). Two crystalline modifications forms I and II, stables above and below T _c = 210 K respectively were found according to the thermal history of the sample. A comparative analysis of the NQR frequency in both phases suggests that the crystal structure in form II is closer-packed than in form I. The NQR line width shows the existence of a thermal activated process with an activation energy E _a ? 20 kJ mol^?1, probably related with reorientations of the CH₂Cl end groups. Some orientational disorder is expected in the low temperature modification since the line width is twice as much as that in the high temperature phase.     

Observation of coherent optical phonons excited by femtosecond laser radiation in Sb films by ultrafast electron diffraction method

The generation of coherent optical phonons in a polycrystalline antimony film sample has been investigated using femtosecond electron diffraction method. Phonon vibrations have been induced in the Sb sample by the main harmonic of a femtosecond Ti:Sa laser (λ = 800 nm) and probed by a pulsed ultrashort photoelectron beam synchronized with the pump laser. The diffraction patterns recorded at different times relative to the pump laser pulse display oscillations of electron diffraction intensity corresponding to the frequencies of vibrations of optical phonons: totally symmetric (A _1g ) and twofold degenerate (E _g ) phonon modes. The frequencies that correspond to combinations of these phonon modes in the Sb sample have also been experimentally observed.     

Multiphoton interband transitions assisted by photoexcited free carriers

The rate of generation of electron-hole pairs by intense light is calculated within a three-band model of an insulator including a valence band v and conduction bands c and c ₁. It is assumed that the photon energy ?ω is small in comparison with the band gap E _g and generation occurs due to the transitions involving free electrons in the upper conduction band c ₁. It is shown that, at a light intensity j ～ 10¹¹ W/cm² and an electron concentration in the c ₁ band exceeding 10¹⁷ cm^?3, the rates of the transitions c ₁ +l ?ω → ccv (l = 2 or 3) exceed the rates of direct five-photon transitions between the v and the c bands. In this case, a multiphoton avalanche can be initiated.     

赝配GaAs/In0.2Ga0.8As量子阱导带不连续量的C-V和电容瞬态测量

分别采用二种不同方法测量分子束外延(MBE)生长GaAs/In_0.2Ga_0.8As单量子阱结构的导带不连续量ΔE_c:1) 考虑样品界面电荷修正的电容-电压(C-V)分布；2) 量子阱载流子热发射产生的电容瞬态(DLTS).C-V测得的ΔE_c=0.227eV,大约相当于89% ΔE_g.DLTS测得的ΔE_c=0.229eV,大约相当于89.9% ΔE_g.结果 关键词：     

Energy band structure of TiO2 and it's dependence on uniaxial stress

The electronic band structure of titanium dioxyde is calculated. The evolution of the levels and of the optical transitions under an uniaxial stress along the c axis has also been calculated.We confirm the existence, of a first order forbidden direct optical gap, and of a maximum along the Δ direction; the theoretical pressure coefficients ?E/?P for the Γ⁺₇ → Γ⁺₆ and Δ₅ (max) → Γ⁺₆ transitions are respectively 0.600 and 0.950 meV kbar^-1 while the corresponding experimental values are 0.625 and 0.985 meV kbar^-1.     

Infrared-microwave two-photon spectroscopy of the ν2 band of 14NH3

Transitions in the ν₂ band of ¹⁴NH₃ were recorded by means of an infrared laser microwave two-photon spectrometer. The spectrometer, which uses a minicomputer to step the microwave frequency and record the spectrum, is described. With sample cells outside the laser cavity good lineshapes are obtained, so that the accuracy of frequency measurement was limited by the resettability of the CO₂ or N₂O lasers employed, ～0.0002 cm^?1. The present data are compared to previously obtained results based on CO₂ or N₂O laser frequencies and to recently reported calculations. Rotational constants derived for the hypothetical inversion-free ground and v₂ = 1 states are reported.     

Assignment of the HCOOH CW-submillimeter laser

Twenty one laser lines of the 250–1000 GHz range have been assigned in the v₆ and v₈ excited states of the H¹²COOH molecule. The microwave study of these two states has allowed us to determine the molecular constants and to calculate the energy levels up to J = 50. The values of the energy levels of the ground state are well known and allow the frequency calculation of infrared rovibrational transitions near the 9.6–10.6 μm region and the comparison with the frequencies of the CO₂ laser lines. A microwave infrared double-resonance experiment has also been performed to confirm assignment based on the calculation of the energy levels. The value of the two band centers has been determined.     

Valence band contributions to photoluminescence excitation spectra of tightly bound holes in zincblende semiconductors

Photoluminescence excitation (PLE) spectra of deep acceptor states in ZnSe, for example the Cu-related luminescence band at ≈1.95 eV, contain a prominent excitation band at ≈3.25 eV. This band lies above the structure marking the lowest direct E_O band gap E_g by the spin-orbit splitting energy Δ of the valence bands at Γ. The higher energy feature is either absent or greatly de-emphasised in the PLE spectra of shallow acceptor states in ZnSe and of the oxygen iso-electronic trap in ZnTe, where the electron rather than the hole is tightly bound. However, a significant PLE component at E_g + Δ is observed for deep acceptor-like states in ZnTe, where Δ is ≈0.95 eV. Efficient PLE at E + Δ for luminescence from deep acceptor-like states is shown to be consistent with the extended wave-vector contributions to the bound state wave-functions of holes of binding energies ≈Δ.