Structure, dielectric, magnetoelectric, and dissipative properties of AFe2/3W1/3O3 (A = Ba, Sr, Pb) ceramics in wide frequency and temperature ranges

High-density impurity-free AFe_2/3W_1/3O₃ (A = Ba(BWF), Sr(SWF), Pb(PWF)) ceramics with well-developed microstructures were synthesized. Their structures and dielectric properties were investigated over wide temperature (10–973 K) and frequency (25 Hz-1 MHz) ranges. These materials are found to be almost transparent in the microwave range. They were characterized by weak magnetoelectric interactions; ?(BWT) ≈ 50 up to 400 K and ?(BWT) and ?(PWT) have second maxima between 400 and 600 K. All properties are easily reproduced, regardless of slight variations in synthesis conditions.     

Phase states and dielectric properties of sodium-potassium niobate solid solutions

The temperature dependence of dielectric constant ? for single crystals of Na_1?xK_xNbO₃ (0.04?x?0.15) is studied for the first time. From the shape of the ?(T) anomalies corresponding to rotational phase transitions, the type of interaction between the order parameters and the polarization is determined. A phenomenological model is developed which adequately describes the experimentally observed sequence of high-temperature (T>300°C) phase transitions, the dielectric anomalies associated with these transitions, and the changes in the phase states under the action of external factors (pressure, electric field).     

Plasmon modes of double-layer graphene at finite temperature

We calculate the dynamical dielectric function of doped double-layer graphene (DLG), made of two parallel graphene monolayers with carrier densities n₁ and n₂, and an interlayer separation of d at finite temperature. The results are used to find the dispersion of plasmon modes and loss functions of DLG for several interlayer separations and layer densities. We show that in the case of n₂=0, the finite-temperature plasmon modes are dramatically different from the zero-temperature ones.     

Nonlinear dielectric properties of planar structures based on ferroelectric betaine phosphite films

Ferroelectric films of partly deuterated betaine phosphite are grown on NdGaO₃(001) substrates with an interdigitated system of electrodes on their surfaces by evaporation at room temperature. These films have a high capacitance in the ferroelectric phase transition range. The dielectric nonlinearity of the grown structures is studied in small-signal and strong-signal response modes and in the intermediate region between these two modes by measuring the capacitance in a dc bias field, dielectric hysteresis loops, and the Fourier spectra of an output signal in the Sawyer-Tower circuit. In the phase transition range, the capacitance control ratio at a bias voltage U _bias = 40 V is K ? 7. The dielectric nonlinearity of the structures in the paraelectric phase is described by the Landau theory of second-order phase transitions. The additional contribution to the nonlinearity in the ferroelectric phase is related to the motion of domain walls and manifests itself when the input signal amplitude is higher than U _st ～ 0.7–1.0 V. The relaxation times of domain walls are determined from an analysis of the frequency dependences of the dielectric hysteresis.     

Phase transition and dielectric properties of Li2-x NaxGe4O9 crystals (0.2 ≤ x ≤ 0.3)

The dielectric nonlinearity of ferroelectric Li_2-x Na_xGe₄O₉ crystals (0.2 ≤ x ≤ 0.3) is measured in the region of the phase transition temperatures. The ?(T) dependences for various values of the applied dc electric field E ₌ and the ?(E ₌)_T dependences at a constant temperature are studied in the Li_2-x Na_xGe₄O₉ crystals with T _c > 300 K and T _c < 300 K. It is shown that the Landau theory for second-order phase transitions describes the dielectric properties of the crystals with T _c < 300 K and does not describe the behavior of the crystals with T _c > 300 K. The results obtained lead to the conclusion that the different properties of the crystals with T _c > 300 K are likely to be related to the changed structure of these crystals caused by a change in the ratio between the Li and Na atoms.     

‘Dirty’ displacive ferroelectrics

Using the powder Raman technique we have measured most of the lattice vibrational modes in the Pb_1?xLa_xTi_1?x/4O₃ perovskite solid solution series. From the data for these disordered systems the clamped dielectric constant at zero frequency, ?_m, was determined and compared with the clamped dielectric constant, ?_cap, measured by standard capitance techniques. We find that ?_cap/?_m exceeds one, and increases as the transition temperature is approached from below. Strikingly, we also find similar behavior for the ‘classical’ ferroelectrics BaTiO₃, LiNbO₃ and LiTaO₃, as well as for ferroelectrics with the tungsten bronze crystal structure.     

Phonon spectrum and interaction between nanotubes in single-walled carbon nanotube bundles at high pressures and temperatures

The Raman spectra of single-walled carbon nanotubes at temperatures up to 730 K and pressures up to 7 GPa have been measured. The behavior of phonon modes and the interaction between nanotubes in bundles have been studied. It has been found that the temperature shift of the vibrational G mode is completely reversible, whereas the temperature shift of radial breathing modes is partially irreversible and the softening of the modes and narrowing of phonon bands are observed. The temperature shift and softening of radial breathing modes are also observed when samples are irradiated by laser radiation with a power density of 6.5 kW/mm². The dependence of the relative frequency Ω/Ω₀ for G ⁺ and G ^? phonon modes on the relative change A ₀/A in the triangular lattice constant of bundles of nanotubes calculated using the thermal expansion coefficient and compressibility coefficient of nanotube bundles shows that the temperature shift of the G mode is determined by the softening of the C-C bond in nanotubes. An increase in the equilibrium distances between nanotubes at the breaking of random covalent C-C bonds between nanotubes in bundles of nanotubes is in my opinion the main reason for the softening of the radial breathing modes.     

Radiative plasmon polaritons in multilayer structures with a two-dimensional electron gas

Two-dimensional plasmon polaritons are analyzed for a typical experimental configuration in which a layer of two-dimensional electrons with a finite mobility lies on the top of a dielectric waveguide formed by the substrate (a wafer of finite thickness). Two-dimensional plasmons couple strongly to the radiative modes of this dielectric waveguide. It is shown that, as a result of the competition between collisional and radiative processes, a family of eight quasi-stationary normal modes arises. Six of them decay carrying energy to infinity. The two remaining plasmon-polariton modes are nonradiative. One of these modes, the TM-type plasmon polariton, in the limiting case where retardation is disregarded corresponds to the conventional longitudinal two-dimensional plasmon. The other mode, the TE-type plasmon polariton, exists only for a finite thickness of the substrate. All of them are characterized by different dispersion relations of the complex frequency ω(q) = Reω + iImω and differ in both polarization (longitudinal and transverse) and symmetry with respect to the direction of decay (symmetric and asymmetric). The latter modes decay slowly, propagating into free space to plus or minus infinity. The conditions under which the Q factors of certain modes are arbitrarily high are found. In this case, Imω(q ₀) = 0, and dissipative losses in the two-dimensional electron gas are compensated by external sources. As a result, the reflection coefficient for a plane wave whose angle of incidence is determined by the vector q ₀ vanishes.     

I.R. Lattice-vibration spectra of MnF2

The room temperature reflectivity of MnF₂ has been measured in the far i.r. between 50 and 800 cm^?1. The reflectivity spectra show four i.r.-active modes which can be identified as E_u and A_2u modes. The spectra also show structure which might be related to multiphonon effects. The dielectric functions were determined by fitting the reflectivity data with classical oscillator parameters.     

Two-band BCS mechanism of superconductivity in a Ba(Fe0.9Co0.1)2As2 high-temperature superconductor

Terahertz and infrared spectra of the conductivity, σ(ν), and dielectric constant, ?(ν), of a Ba(Fe_0.9Co_0.1)₂As₂ film (T _c = 20 K) have been analyzed together with previous specific-heat and angular resolved photoelectron spectroscopy data. It has been shown that the spectra σ(ν) and ?(ν) of Ba(Fe_0.9Co_0.1)₂As₂ in the superconducting phase at T = 5 K, as well as the magnetic field penetration depth, can be described well using the standard Bardeen-Cooper-Schrieffer (BCS) model with an additive contribution of electron and hole bands. It has been found that the measured temperature dependence of the magnetic field penetration depth in a wide temperature range 5 K < T < T _c can be described only with the introduction of interband pairing interaction. The coupling constant of electron and hole bands, λ_{1, 2} = 0.1, as well as the temperature dependences of superconducting gaps in the electron and hole subsystems, has been determined using the model of two-band superconductivity developed earlier for MgB₂.     

Nichtsenkrechte Interbandübergänge in Graphit durch unelastische Elektronenstreuung

Characteristic energy loss measurements are carried out on natural graphite single crystals. The frequency and wave vector dependent dielectric constant ?(ω,q) forq⊥c-axis is determined by Kramers Kronig Analysis. The results are interpreted in terms of non vertical interband transitionsE(k)→E(k+q) between the π-bands within the two dimensional approximation.     

A partially reflecting metal cladding: its effect on the modes of dielectric optical waveguides

If the metal cladding of a dielectric optical waveguide is sufficiently thin to be only partially reflecting, then the waveguide modes differ from those of the conventional metal-clad waveguide. The TE modes are little affected by a variation in the metal thickness but the TM modes change considerably due to a coupling between the waveguide modes and the surface plasma waves supported by both the metal: dielectric interfaces and the metal film. It is the refractive index of the dielectric cladding which is remote from the guiding core that determines whether the lowest order TM mode is the TM₀ or TM₁ mode. This dielectric cladding also strongly influences the attenuation of the TM modes and, if the guide supports a TM₀ mode, then the attenuation of the TM modes far from cut-off are an order of magnitude higher than that of the corresponding modes when the guide cannot support a TM₀ mode. If the guide can support a TM₀ mode then its dimensions can be chosen such that it will support the TE_N and TM_N modes with equal phase velocities. A lossless approximation is used to develop an expression which will specify the required guide dimensions directly and parametric plots of these dimensions are discussed.     

Dielectric characterization of semiconducting ZnPc films sandwiched between Gold or Aluminum electrodes

The dependencies of complex dielectric functions (the dielectric constant, ε ₁, and the dielectric loss, ε ₂), on frequency and temperature of zinc phthalocyanine (ZnPc) thin films sandwiched between either gold or aluminum Ohmic-electrode contacts have been investigated in the temperature range of 93–470 K and frequency range 0.1–20 kHz. It is found that both values of ε ₁ and ε ₂ decrease with increasing frequency and increase with decreasing temperature. The rate of change depends greatly on the temperature and frequency ranges under consideration. Around room temperature, neither ε ₁ nor ε ₂ show any appreciable change through the whole range of frequencies. Thus, the dielectric dispersion is found to include of both dipolar and interfacial polarizations. The dependencies of both dielectric functions on frequency at different temperatures were found to follow a universal power law of the form ω ⁿ , where the index 0<n≤?1. This indicates that the correlated barrier hopping (CBH) model is a suitable mechanism to describe the dielectric behavior in ZnPc films. Furthermore, the results of the dielectric response indicate that polarization in these films could be in the form of non-Debye polarization. However, the Debye polarization can be traced below room temperature. The obtained results of the relaxation-time, τ, dependency on temperature have shown that a thermally-activated process may be dominated in ZnPc thin films conduction at high temperatures. Partial phase transition (from α- to β-phase) has been observed around 400 K in molecular relaxation-time, τ, and optical dielectric constant, ε _∞. Arrhenius behavior has been observed for all the dielectric loss and conductivity relaxation-times above room temperature and their activation energies are explained and reported. The optical dielectric constant ε _∞ was found to increase with temperature.     

Polar phonons and specific features of the ferroelectric states in cadmium titanate

Polarized spectra of reflectance R(ν) and transmittance Tr(ν) of single-crystal CdTiO₃ samples have been obtained in the frequency range 7 < ν < 1000 cm^?1 and for temperatures from 5 to 300 K using IR Fourier spectroscopy and submillimeter-range techniques. Dispersion analysis was carried out in terms of the additive-oscillator model, and dielectric responses ε(ν) and ε″(ν) were calculated. The polar modes were assigned to particular symmetry types, and their oscillator parameters (dielectric contributions, normal frequencies, damping constants) were determined. The numerical values of the components of the static permittivity tensor, ε₁₁ and ε₃₃, are shown to be almost fully determined by the total dielectric contributions due to the B_3u and B_1u phonons, respectively. In the low-frequency domain, lines showing anomalous behavior of the oscillator parameters, which is characteristic of soft ferroelectric modes, were observed. It is shown that, in CdTiO₃ at cryogenic temperatures, there exist several different polar states with switching in the direction of the spontaneous polarization vector.     

Role of Cu concentration on the structure and transport properties of Cr-Zn ferrites

The influence of Cu concentration on the transport and microstructure characteristics of Cu_yZn_1−yCr_0.8Fe_1.2O₄ with 0.2≤y≤1 ferrite was studied. X-ray, energy dispersive X- ray (EDAX) and infrared spectra (IR) were carried out to assure the formation of the sample in the proper form. The dielectric constant (ε′) and ac conductivity were measured at different frequencies ranging from 600 kHz to 5 MHz from room temperature up to 800 K. The obtained data reveals that, a single phase cubic spinel structure for all the concentrations. From the results of IR spectra, mainly two bands were observed. The dielectric constant and the dielectric loss tangent decrease with increasing frequency and Cu concentration. The dielectric constant shows a dispersion peak (ε′_max) which shifts to higher frequency with increasing the temperature. The results are explained as due to the fact that the dielectric polarization process is similar to that of conduction. The appearance of the dispersion peak is related to the contribution of two types of charge carriers.     

Critical behavior of polar modes in lead phosphate near the ferroelastic phase transition

The temperature dependence of IR reflection spectra (15–4000 cm^?1) of A_u and B_u modes in the α phase and of E_u modes in the β phase of lead phosphate has been studied with a Fourier transform scattering interferometer. Frequencies, dampings and oscillator strengths of all modes show critical behavior, more or less marked, in the vicinity of the transition temperature. Correlations between the modes in both phases, including Raman results, are made. The temperature at which most of the modes lose their polar character is found more than ten degrees above that found by means of other techniques. Raman and X-ray data also indicate that characteristics of the monoclinic structure still persist well above T_c = 180°.     

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

In this investigation, an operating voltage as low as 5 V has been achieved for Oxide TFT with Y₂O₃ as a gate oxide and a-IGZO as an active layer. The OTFT has been fabricated at room temperature using RF sputter. The mobility and threshold voltages are 11.3 cm²/V s and 3.4 V for the device with W/L = 0.8, respectively. The annealing at 400 °C in N₂ containing 5% H₂ ambient has been utilized to improve the electrical performance of TFT. The on-off current which is determined by gate dielectric has been observed to be 10⁴. It has also been observed that the dielectric properties of gate oxide deteriorate on annealing. The dielectric constant of Y₂O₃ is observed in the range between 5.1 and 5.4 measured on various devices.     

Temperature and pressure dependences of the properties and phase transition in paratellurite (TeO2: Ultrasonic,dielectric and Raman and Brillouin scattering results

The effects of temperature and pressure on the ultrasonic propagation properties, dielectric constants and the Raman and Brillouin spectra in paratellurite (TeO₂) were investigated with emphasis on the behavior in the vicinity of the newly-discovered, pressure-induced phase transition. The transition is found to be second-order and purely strain-induced, driven by a soft shear acoustic mode propagating along a <110〉 and polarized along a (110) crystal direction. Such pure-strain transitions were previously discussed by Anderson and Blount and the transition in paratellurite is the first observation of this kind of transition. No evidence was found for any coupling of the soft mode to any other acoustic or optic mode, although small anomalies associated with lattice strains accompanying the transition were observed in some of the elastic and dielectric constants. Analysis of the effective elastic constant C, governing the soft mode velocity indicates that, within experimental uncertainty, the transition can be described by mean-field theory. Although the apparent attenuation of the soft mode increased significantly near the transition, it is concluded that this effect is probably due to the fact that the phase and group velocities are not parallel rather than to intrinsic dissipative processes in the crystal. With the exception of C₄₄, the remaining elastic constants and Raman-active phonon frequencies displayed normal increases with pressure. No soft Raman-active modes were observed in either phase. The static dielectric constants ?₁ are large, due to the large electronic polarizability of TeO₂, and the anisotropy in ? results almost entirely from the anisotropy in the optical dielectric constants ?_∞. In the low pressure tetragonal phase both ?_a and ?_c exhibit normal temperature dependences and ?_c decreases with pressure; however, ?_a exhibits an anomalous increase with pressure. Temperature, pressure and uniaxial stress measurements are combined to evaluate the various contributions to the temperature and pressure dependences of ?. Combining the ? data with available i.r. measurements demonstrated that the generalized Lyddane-Sachs-Teller relation is well obeyed for TeO₂. Finally, the Szigetti effective charge ratios were determined for the lowest frequency IR-active modes. These ratios were found to be quite low, being 0.27 and 0.18 for the a-axis responses, respectively, indicating that the bonding is highly covalent.     

Role of the TiO6 octahedra on the ferroelectric and piezoelectric behaviour of the poled PbMg1/3Nb2/3O3-xPbTiO3 (PMN-PT) single crystal and textured ceramic

Field cooling (FC) poled/unpoled PMN-29%PT single crystal and room temperature (RT) poled/unpoled PMN-34.5%PT textured ceramic were investigated between ∼0 and 300 °C by thermal expansion, dielectric and Raman spectroscopy. New phase transitions are evidenced at 40, 91 and 180 °C in the case of FC PMN-29%PT as well as at 70 and 200 °C for RT PMN-34.5%PT and their order is discussed. The physical properties of the textured ceramics are rather similar to the ones observed for the single crystals that make them low-cost alternative for a wide range of applications. However, the temperatures and character of the phase transitions strongly depend on the kind of the poling conditions. Temperature dependences of the Raman line parameters show that the NbO₆ octahedra remain stable during temperature increase, while TiO₆ ones evolve quasi-continuously. The step transitions of the Pb²⁺ ion sublattice are evidenced. This suggests that the TiO₆ and Pb²⁺ sublattices are especially coupled. The role of the TiO₆ clusters on the structural phase transitions and dielectric properties of the PbMg_1/3Nb_2/3O₃-xPbTiO₃ (PMN-PT) system is discussed. The presence of the Raman modes above the maximum dielectric permittivity reveals that the local symmetry is lower than the cubic one (Pm3m). The decrease of the Raman line intensities vs. temperature indicates precisely the continuous evolution of the local symmetry towards the cubic one. The temperature evolution of the Rayleigh wing parameters appears sensitive to the phase transitions’ presence.     

AC conductivity and dielectric properties of bulk tungsten trioxide (WO3)

AC conductivity and dielectric properties of tungsten trioxide (WO₃) in a pellet form were studied in the frequency range from 42 Hz to 5 MHz with a variation of temperature in the range from 303 K to 463 K. AC conductivity, σ_ac(ω) was found to be a function of ω^s where ω is the angular frequency and s is the frequency exponent. The values of s were found to be less than unity and decrease with increasing temperature, which supports the correlated barrier hopping mechanism (CBH) as the dominant mechanism for the conduction in WO₃. The dielectric constant (ε′) and dielectric loss (ε″) were measured. The Cole–Cole diagram determined complex impedance for different temperatures.