Electronic band structure of Cu3Au: An angle-resolved photoemission study along the [111]-direction

High-resolution normal photoemission (ARPE) spectra have been recorded for Cu₃Au(111) with the use of polarized synchrotron and rare-gas resonance radiation in the photon energy range from 9 to 27 eV. It is for the first time that dispersions of the gold-like bands have been found experimentally. Using a fully relativistic layer-KKR photoemission formalism, occupied and unoccupied bands as well as one-step-model photoemission spectra have been calculated. The comparison of calculated spectra with experimental ones and the observation of direct-transition resonances upon photon energy near the Brillouin zone-center reveal a shift of the unoccupied ground-state bands by about +2.5 eV (self-energy shift). The direct-transition structures in the experimental spectra have been exploited to determine the dispersions of the occupied bands along the [111] direction (A line in k space). In order to determine the wave vector of the experimental direct transitions we used as final state that calculated unoccupied band along [111], which also exists in pure copper and gold up to about 20 eV above the Fermi energy (“unfolded” band structure), shifted by + 2.5 eV. The experimental occupied bands with Cu character are in very good agreement with theory after shifting the latter by about 0.3 eV to lower energy, whereas somewhat bigger discrepancies exist for the gold-like bands.     

表面氢化的双层氮化硼的结构和电子性质

采用第一性原理方法研究了表面氢化的双层氮化硼的结构和电子性质.考虑了表面氢化的双层BN可能存在的六种主要构型,计算结果表明:AB-BN和AA-BN两种构型最为稳定.进一步分析了氢化后的双层BN最稳定构型的能带和电子性质.AB-BN和AA-BN两种构型的原子薄片均为直接带隙半导体,GGA计算的带隙值分别为1.47 eV和1.32 eV.因为GGA通常严重低估带隙值,采用hybrid泛函计算得到带隙值分别为2.52eV和2.34 eV.在最稳定的AB-BN和AA-BN两种构型中,B-N键呈现共价键,而B-H和N-H则具有明显的离子键的特点.在双轴应变下氢化双层BN原子薄片可以被连续地调节带隙,当晶格常数被压缩约8%时,原子薄片由半导体性转变为金属性.     

Density of states modifications in amorphous and hydrogenated amorphous germanium and their effect on 3d core levels binding energy

By using photoemission and partial yield spectroscopies the conduction band edge, the valence band and the 3d core levels of amorphous germanium hydrogenated and nonhydrogenated are studied and compared to that of crystalline Ge. We measure a 0.25 eV shift of the 3d core levels of amorphous Ge as compared to crystalline Ge whereas a smaller shift and a slight line - broadening are found in hydrogenated amorphous samples with low H content. These results are discussed in term of the contribution to the self-energy due to relaxation of the valence electrons when a core hole is created.     

Phase shift analysis of below-gap primary photocurrent in hydrogenated amorphous silicon

Below-gap primary photocurrent associated with dangling bond defects in hydrogenated amorphous silicon has been investigated by measuring the amplitude and phase shift spectra with respect to the chopped excitation light. Theoretical analysis has been made on the temperature and chopping frequency dependence of the phase shift, yielding a conclusion that the doubly occupied dangling bond states are located at 0.5-0.6 eV below the conduction band edge.     

Hydrogenated silicene based magnetic junction with improved tunneling magnetoresistance and spin-filtering efficiency

In this paper, hydrogenation is used for the generation of band gap in silicene and the hydrogenated silicene is then studied for its spintronic application. Upon hydrogenation, silicene transforms into a wide band gap material with a band gap of 3.32 eV. Parameters like magneto-resistance and spin-filtering efficiency of magnetic tunnel junction (MTJ) with CrO₂ as semi-metallic electrodes and hydrogenated silicene as scattering region are found to increase compared to pristine silicene as scattering region. The simulation results show that the magneto-resistance of hydrogenated silicene remains above 85% (higher than the pristine counterpart) for the entire bias range. In addition, the spin-filtering efficiency in hydrogenated silicene reaches a value as high as 96% whereas in case of pristine silicene it remains below 90% for the entire bias range.     

Photoluminescence of a silver-doped glass

The absorption, emission and excitation spectra of Ag⁺ ions in a soda lime glass doped with two different concentration of silver are investigated. Absorption spectra exhibit a main broad band peaked at about 260 nm (4.77 eV) with a shoulder at about 227 nm (5.46 eV). The relative height of the shoulder depends on silver concentration in the glass. Emission spectra of Ag⁺ are dominated by an ultraviolet broad band at about 330 nm (3.76 eV). The excitation spectra for this emission show a preponderant broad band peaked at about 227 nm (5.46 eV) which coincides with peak position of the shoulder displayed in the optical absorption spectra. A weak broad featureless emission band centred at about 550 nm (2.25 eV) with an excitation peak at about 242 nm (5.12 eV) is tentatively related to an impurity from the host silica glass rather than originated in silver-type centres. Comparison of the luminescence decay curves for both emissions show substantial differences between them. Consequently, the emissions in the time-resolved spectra can easily be discriminated.     

表面氢化双层硅烯的结构和电子性质

采用密度泛函理论(DFT)广义梯度近似GGA和HSB06方法研究了氢化双层硅烯(silicene)的结构和电子性质, 结果表明: 氢化后的双层硅烯可能存在三种稳定的构型, AA椅型、AB椅型和AA船型, 其中AA椅型和AB椅型结构最为稳定, 氢化后这三种稳定构型材料的性质由零带隙的半金属(semimetal)转变为禁带宽度分别为1.208, 1.437和1.111 eV 的间接带隙的半导体, 采用混合泛函HSB06计算修正得到的带隙分别为1.595, 1.785 和1.592 eV. 进一步分析了在双轴应变下氢化双层硅烯的带隙随应变的关系, 得到应变可以连续的调节材料的带隙宽度, 这些性质有可能应用于未来的纳米电子器件.     

The bonding of oxygen to Al(111)

Oxidation of the Al(111) surface is a two-stage process in which the formation of an ordered oxygen overlayer precedes the creation of a bulk-like amorphous oxide. An electronic structure calculation is reported here for the clean and oxygen-covered Al(111) surface and for bulk A1₂O₃. The calculation uses an atomic-orbital basis and the metal surface is modelled by an infinite two-dimensional crystal, containing seven layers of aluminium atoms. Oxygen atoms occupy three-fold sites, with an Al-O separation of 1.9 Å. The oxygen 2p resonance in the (1 × 1) chemisorbed overlayer is about 3 eV wide, compared to 1.9 eV for an equivalent isolated layer of oxygen atoms unhybridized with the metal. The valence band of A1₂O₃ is about 1.5 eV wider than the chemisorbed oxygen resonance, but in both cases most of the states are concentrated in the top 1.5 eV of the band. The results are related to available ultraviolet photoemission spectra, including the recent angular-resolved spectra of Martinson and Flodström.     

Observation of giant resonance phenomena in the two-step mechanism of electron-Xe collision

We report an (e,2e) binding energy spectrum of Xe obtained at an impact energy of 2.1 keV, which covers the binding energy range up to 220 eV. The result is directly compared with data from high-energy photoelectron spectroscopy. It is found that an (e,2e)-specific, very broad band appears at around 120 eV, although in other energy regions the binding energy spectra by the two methods are in good agreement. The presence of such a band is revealed for the first time, which can be attributed to the second-order effects of the electron-target interaction that involves giant resonance phenomena of the Xe 4d electron.     

Recombination luminescence in irradiated silicon-effects of uniaxial stress and temperature variations†

Luminescence in irradiated silicon consists of a spectral group between 0.80 eV and 1.0 eV which seems to be independent of impurities while a lower energy group between 0.60 eV and 0.80 eV is seen only in pulled crystals. The small halfwidth and temperature dependence of the sharp zero-phonon lines observed in these spectra indicates that the luminescence arises from a bound-to-bound transition. A model is proposed for the transition mechanism. Stress data taken on the 0.79 eV zero-phonon line in pulled crystals can be fit by either a tetragonal [100] defect symmetry or by conduction band splitting effects. It is suggested that the 0.79 eV zero-phonon line and the 0.60 eV to 0.80 eV spectral group arise from the EPR G-15 center. Stress data on a zero-phonon line at 0.97 eV associated with the 0.80 eV to 1.0 eV spectral group can be explained by a trigonal [111] defect. The divacancy is tentatively suggested as responsible for this luminescence spectra.     

应变对两层半氢化氮化镓薄膜电磁学性质的调控机理研究

采用基于密度泛函理论的第一性原理模拟计算,研究了在应变作用下两层半氢化氮化镓纳米薄膜的电学和磁学性质.没有表面修饰的两层氮化镓纳米薄膜的原子结构为类石墨结构,并具有间接能隙.然而,当两层氮化镓纳米薄膜的一侧表面镓原子被氢化时,该纳米薄膜却依然保持纤锌矿结构,并且展示出铁磁性半导体特性.在应变作用下,两层半氢化氮化镓纳米薄膜的能隙可进行有效调控,并且它将会由半导体性质可转变为半金属性质或金属性质.这主要是由于应变对表面氮原子的键间交互影响和p-p轨道直接交互影响之间协调作用的结果.该研究成果为实现低维半导体纳米材料的多样化提供了有效的调控手段,为其应用于新型电子纳米器件和自旋电子器件提供重要的理论指导.     

Photoemission study of CaF2 on Si(001)-2×1 during annealing

We have employed synchrotron radiation photoemission to investigate calcium fluoride deposited on Si(001)-2×1 annealed at 700 °C. The valence band spectra reveal that the initial molecules are dissociated to single Ca atoms resting on the surface. Si 2p core-level spectra manifest a negatively shifted Ca-induced line at 0.35 eV. The dissociated Ca atoms occupy only half of the surface, on top of which the CaF₂ molecules commence growth. This is in contrast to the Si(111)-7×7 counterpart, which exhibits a CaF layer in the interface. Strong elastic scattering due to the absorbed Ca atoms is evident in the photoemission spectra, thus averaging out the angle-dependent features.     

Electronic structure of Yb/H－Si (111) interface

Photoemission spectra are measured for Yb covered surface of wet-chemically-etched H－Si (111). The results reveal that the lattice structure of the H－Si (111) surface is stable against the deposition of Yb atoms. X-ray photoemission spectra indicate the formation of a polarized (dipole) surface layer, with the silicon negatively charged. Ultraviolet photoemission spectra exhibit the semiconducting property of the interface below one monolayer coverage. Work function variation during the formation of the Yb/H－Si (111) interface is measured by the secondary-electron cutoff in the ultraviolet photoemission spectral line. The largest decrease of work function is ～1.65eV. The contributions of the dipole surface layer and the band bending to the work function change are determined to be ～1.15eV and ～0.5eV, respectively. The work function of metal Yb is determined to be ～2.80±0.05eV.     

Specific features of the optical absorption in carbon nanosystems with hydrogen

This paper reports on the results of experimental investigations of the optical absorption (in the wavelength range 200–1200 nm) by carbon-containing thin nanofilms formed on the surface of poly(vinylidene fluoride) upon its chemical functionalization. The optical spectra exhibit resonance absorption peaks in the photon energy range 2.5–3.0 eV. The IR absorption spectra contain lines attributed to the carbon-containing phase. The band structure, the density of states, and the optical constants of one-dimensional carbon chains with added hydrogen are calculated by the semiempirical tight-binding method. The results of the calculations are compared with the experimental optical spectra. It is demonstrated that the theoretical and experimental spectra are in satisfactory agreement.     

First-principles study on the electronic transport properties of M/SiC Schottky junctions (M=Ag,Au and Pd)

In this work, we investigate the electronic transport properties of M/SiC Schottky junctions (M=Ag, Au and Pd). The results show that the band structures of hydrogenated zigzag SiC nanoribbons (ZSiCNRs) and hydrogenated armchair SiC nanoribbons (ASiCNRs) are almost unaffected by their width changes. When the hydrogenated 7-ASiCNR is directly connected to the Ag, Au and Pd electrode, the transmission spectra of three metal-semiconductor junctions show that the Fermi level of metal is pinned to a fixed position in the semiconductor band gap of hydrogenated 7-ASiCNR. The nearly same rectifying current-voltage characteristics are found in three metal-semiconductor junctions. The average rectification ratios of three M/SiC Schottky junctions are all in the neighborhood of 10⁶. In other word, the M/SiC Schottky junction has remarkable application prospect as the candidate for Schottky Diode.     

Satellite band in the rovibrational spectrum of CO2 in helium droplets

Pulsed infrared (nu approximately 2350 cm(-1)) laser excitation spectra of CO2 molecules embedded in helium droplets are reported. The spectra exhibit a sharp R(0) rovibrational line accompanied by a weak broader (deltanu approximately 10 cm(-1)) satellite band, which is shifted by 14 cm(-1) towards higher frequencies. We assign this satellite band to a simultaneous rovibrational excitation of a molecule and its helium solvation shell. The results are rationalized within a model, which includes coupling of the rotational states of a molecule and a ring of He atoms.     

Hybrid Structures of a-C:H Films Covered with Ag Nanoparticles for Application in Photonics

Optics and Spectroscopy - In this paper, the optical density and photoluminescence (PL) spectra of thin-film hybrid structures based on amorphous hydrogenated carbon (a-C:H) with a wide (2.7 eV)...     

Angle-resolved resonant photoemission of Ni(100) and Ni(110) single crystals

We have studied the valence band photoemission spectra of Ni(100) and Ni(110) single crystals near the excitation threshold for 3p core electrons. The resonant behavior of the 6 eV satellite does not depend on both the surface orientation and the polarization of the electric vector of an incident light for excitation. These results indicate that the 6 eV satellite should be under little influence of spatial symmetry of the valence band. In the angle-resolved photoemission spectra of Ni(100), we have observed another broad feature near the 6 eV satellite. It shows the large energy dispersion and is interpreted as due to the interband transition. In Ni(110), we have observed the weak valence band satellites at binding energies of about 9.3 eV and 13.4 eV. They do not show well-defined resonance around the 3p threshold.     

Angular distribution of the photoelectron spectrum of CO2, COS,CS2, N2O,H2O,and H2S

The photoelectron spectra of the triatomic molecules CO₂, COS, CS₂, N₂O, H₂O, and H₂S have been measured as a function of the angle θ between the direction of the incoming photon and outgoing photoelectron. The photoelectron spectra have been measured with a double-focusing electrostatic electron spectrometer to which has been attached a chamber containing a gas discharge lamp that can be freely rotated. (The photon source used was the 21.22 eV He I resonance line). From the dependence of intensity as a function of θ the angular parameter β was determined for each ionization band observed in the photoelectron spectra. A correlation was noted between the values of β and the molecular orbitals relative to the contributions of oxygen and sulfur atomic orbitals. Individual β values were also obtained for most of the vibrational bands seen in the photoelectron spectra. In most cases the vibrational structure showed little or no change in the angular parameter for a given electronic state. In certain cases, however, such as the fourth ionization band in CS₂, CO₂, and COS, rather sizeable changes in β were observed for the different vibrational bands.     

Photoluminescence of Mn doped epitaxial GaAs

We have measured the near band edge photoluminescence of Mn doped liquid phase epitaxially grown GaAs. The photoluminescence spectra at 2°K shows, at low excitation intensities, a structure of up to eight sharp peaks (widths .2 to 1.0 meV) between 1.517 and 1.512 eV, besides the lower energy bands near 1.41 eV due to the deep Mn acceptor level and the usual donor-acceptor bands around 1.47 eV. Attempts to relate the sharp lines to the Mn electronic states, introduced by doping, were unsuccessful. It is our belief that the presence of this particular impurity in our samples allows for whatever states are responsible for the sharp line structure, to reveal themselves in the emission spectrum. A most unespected result is that near band edge sharp line luminescence is observed for impurity concentration as high as 10¹⁸cm^-3.