Uniaxial stress effects on the 3.4 eV optical structure of silicon by schottky-barrier electroreflectance

The electroreflectance of Si under uniaxial stress has been measured in the 3.0–4.0 eV region at 77 K. The results indicate that the dominant structure in this energy region is attributed to Λ^v₃ → Λ^c₁ (or L^v_3′ → L^c₁ transition. The deformation potentials of these bands are determined to be $\text{D}{}^1{}_1\text{= -7 ± 3 eV,}\text{D}{}^3{}_3\text{= 4 ± 1 eV}\text{and}\text{D}{}^5{}_1\text{= 5 ± 2 eV}$.     

Optical reflectance, dielectric functions and phonon-vibrational modes of reactively sputtered Nb-substituted TiN thin films

The optical reflectance, dielectric functions and phonon vibrational modes of Ti_1?x Nb _x N (0≤x≤0.77) thin films are reported. Films of 500-nm thickness were deposited on 316LN nuclear grade stainless steel substrates by radio-frequency magnetron sputtering. The reflectance spectra of the films, in the energy range 1.5 to 5.5 eV, are fitted using the Drude–Lorentz model as the response of one Drude parameter and four Lorentz oscillators. It is demonstrated that the properties studied are dependent on Nb concentration, x, and exhibit a behavior transition threshold at x=0.5. The optical properties studied are closer to TiN for x<0.5 and resemble NbN for x>0.5. For example, the films showed a minimum in reflectance at ～2.33 eV for values of x up to 0.5, corresponding to the Ti–N charge transfer band. Increase in Nb concentration beyond 0.5 caused a large shift in this energy to 3.2 eV, corresponding to the Nb–N charge transfer excitation. Similarly, the real part of the dielectric function is characterized by a screened plasma energy of 2.25 eV for values of x<0.5 (～TiN) and 3.25±0.2 eV for x>0.5 (～NbN). The energy at which the loss function reaches a peak value increases linearly for values of x from 0 to 0.41 and decreases very drastically for x>0.5. Phonon-vibrational modes of Ti_1?x Nb _x N thin films studied by Raman spectroscopy show that Nb substitution in TiN results in first-order Raman scattering. The single-phonon acoustical peak at 270 cm^?1 of TiN shifted to 265 cm^?1 for x=0.77, while the two-phonon acoustical peak of TiN at 620 cm^?1 shifted to 630 cm^?1 for the same value of x. The reasons for the existence of a behavior transition threshold in Nb concentration are discussed.     

Pressure dependence of the absorption edge for Cd1-xMnxTe

The effect of pressure on the optical absorption edge of mixed crystals Cd_1-xMn_xTe with different manganese concentrations is reported. The observed absorption edge shifts to higher energy with increasing pressure at a rate of α=7?8×10^?3 eV/kbar and a second order coefficient of β=-4×10^?5 eV/kbar² for x<0.5, to lower energy with increasing pressure at a rate of α=-5.0 ×10^?3 eV/kbar for x?0.5. A phase transition occurs for all the samples studied. The absorption edge of the new phase is outside the wavenumber range of the instrument. The physical origins of different pressure coefficients are discussed in the light of the deformation potentials of energy band states and the hybridization of the Mn²⁺ 3d levels with the p-like states in the valence band.     

Electroreflectance and thermoreflectance spectra of SnS

The electroreflectance and thermoreflectance spectra of SnS single-crystals have been studied from 1.2 to 4.8 eV in polarized light for the E ? a and E ? b polarizations. The energy values of critical points have been determined from the experimental curves.     

Optical and structural properties of Zn1−x Mg x O ceramic materials

This paper reports structural, optical and cathodoluminescence characterizations of sintered Zn_1?x Mg _x O composite materials. The effects of MgO composition on these film properties have been analyzed. X-ray diffraction (XRD) confirms that all composites are polycrystalline with prominent hexagonal wurtzite structure along two preferred orientations (002) and (101) for the crystallite growth. Above doping content x = 10 %, the formation of the hexagonal ZnMgO alloy phase and the segregation of the cubic MgO phase start. From reflectance and absorption measurements, we determined the band gap energy which tends to increase from 3.287 to 3.827 eV as the doping content increases. This widening of the optical band gap is explained by the Burstein–Moss effect which causes a significant increase of electron concentration (2.89 × 10¹⁸?5.19 × 10²⁰ cm^?3). The luminescent properties of the Zn_1?x Mg _x O pellets are studied by cathodoluminescence (CL) at room and liquid nitrogen temperatures under different electron beam excitations. At room temperature, the CL spectra of the Zn_1?x Mg _x O composites exhibit a dominant broad yellow-green light band at 2.38 eV and two ultraviolet emission peaks at 3.24 and 3.45 eV corresponding to the luminescence of the hexagonal ZnO and ZnMgO structures, respectively. For the doped ZnO samples, it reveals also new red peaks at 1.72 and 1.77 eV assigned to impurities’ emissions. However, the CL spectra recorded at 77 K show the presence of excitonic emission peaks related to recombination of free exciton (X _A), neutral donor-bound excitons (D⁰X) and their phonon replicas. The CL intensity and energy position of the green, red and ultraviolet emission peaks are found to depend strongly on the MgO doping content. The CL intensity of the UV and red emissions is more enhanced than the green light when the MgO content increases. CL imaging analysis shows that the repartition of the emitting centers in Zn_1?x Mg _x O composites is intimately connected to the film composition and surface morphology.     

Electroreflectance study of the dilure magnetic semiconductor alloy Hg1−xMnxTe

We report the first electroreflectance study of the dilute magnetic semiconductor Hg_1?xMn_xTe in the photon energy region of 0.7–6 eV. The composition dependence of the E₀ + Δ₀, E₁, E₁ + Δ₁, E₀, E₂, E₂ + δ optical features has been determined for 0.015 ≤ × ≤ 0.23. We find that at room temperature the semimetal-semiconductor transition (Γ₆ – Γ₈ crossing) occurs at x = 0.05 ± 0.01. Discontinuities in the composition dependence of all the observed spectral features are seen at this value of x.     

A study of the adsorption of oxygen on Ni(111) using auger electron spectroscopy: Chemical shifts and valence spectra

Auger electron spectra have been recorded when oxygen is adsorbed on a Ni(111) single crystal surface. For the coverage range θ < 1, an analysis of the plot of the peak to peak height (H) of the oxygen KVV (516 eV) transition versus the total number of molecules cm^2? impinging on the surface (molecular beam dosing) shows agreement with the kinetic mechanism proposed by Morgan and King [Surface Sci. 23 (1970) 259] for the adsorption of oxygen on polycrystalline nickel films. In this coverage range, no energy shifts of the nickel or oxygen Auger peaks were recorded.At coverages θ > 1 (standard dosing procedure) shifts in the valence spectra M_{2, 3}VV (61 eV) and L₃M_{2, 3}V (782 eV) of ?2.3 eV and ?1.8eV respectively are recorded at 1.4 × 10^?2 torr-sec. Up to these coverages no shift of the L₃VV transition (849 eV) is observed. A chemical shift of ?2.1 eV is recorded in the L₃M_{2, 3}M_{2, 3} Auger transition (716 eV) at 1.4 × 10^?2 torr-sec.In the coverage range θ > 1, shifts in the energy of the oxygen Auger peaks are observed. At 5.8 × 10^?3 torr-sec. the KVV (516 eV) and KL₁V (495.2 ± 0.3 eV) transitions show shifts of ?1.5 eV and ?(1.0 ±0.3) eV respectively. No shift up to this coverage is recorded in the KL₁L₁ (480.6 ± 0.3 eV) transition.     

Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys

Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the near band gap reflectivity spectrum E_o of Mg_xZn_1?xTe ternary semiconducting alloys. Results are given in the range 80–100 K for the cubic materials: 0〈x〈0.5. The analysis of the line shapes as a function of x and T confirms the hypothesis of an exciton bound to the complex defect associated with zinc vacancy, as ZnTe. The E_o(x) curve is parabolic. The bowing parameter is C=0.45 ± 0.1 eV at 80 K, C=0.6 ± 0.1 eV at 300 K. Within experimental scattering the temperature coefficient dE₀dT is nearly constant with x:-4.5±0.3 × 10^?4eVK^?1. This data is smaller than the value calculated in the literature for ZnTe from pseudo potential method.     

Ionic conductivity of Zr1−xIn2xO2−x

As x in Zr(In)O_2?x is increased from 0.08 to 0.16 (9–19 mole per cent In₂O₃) the activation energy E(x) for ionic conduction increases from 1.05 to 1.51 eV; the concuctivity decreases from 2 × 10^?5 to 3 × 10^?6Ω^?1cm^?1at 400°C, is composition-independent at about 580°C, and increases from 1 × 10^?2 to 4 × 10^?2Ω^?1cm^?1 at 800°C. The pre-exponential term of the Boltzmann-type conductivity equation depends exponentially on E(x), a much stronger dependence on x than theoretically expected with a model for ionic conductivity that includes nearest-neighbor defect interactions. Analysis of reported conductivity data for Zr(M)O_2?x (M = Sc, Y, Ca and rare earth metals) and other doped oxide electrolytes with fluorite-type structure reveals that the same relationship is observed with these materials when x γ0.08. It is shown that ionic conduction in these oxides is consistent with nearest neighbor vacancy-cation defect interaction forx < 0.08 but that an additional complex interaction with composition-dependent free energy ΔG(x) occurs when xγ 0.08.The lattice constant of Zr(In)O_2?x with the cubic fluorite-type structure is independent of composition, 5.114 ± 0.002 Å, in agreement with ionic size considerations.     

Investigation of the ν5 band of methylacetylene by infrared laser Stark and microwave spectroscopy

Microwave spectra have been studied in the ground and v₅ = 1 (CC stretching mode) states of methylacetylene. From these data, dipole moments and rotational and centrifugal distortion constants have been determined, as follows: μ_D⁽⁰⁾ = 0.7839 ± 0.0010 D, μ_D⁽⁵⁾ = 0.7954 ± 0.0010 D, B₅ = 8508.119 ± 0.003 MHz, D_J⁽⁵⁾ = 1.8 ± 0.2 kHz, and D_JK⁽⁵⁾ = 169 ± 1 kHz. Laser Stark spectra have been obtained for the ν₅ band of this molecule and from these spectra the following vibration-rotation parameters have been determined: ν₅⁰ = 93.27540 ± 0.00007 cm^?1, A₅ - A₀ = ?227.0 ± 2.3 MHz and D_K⁽⁵⁾ - D_K⁽⁰⁾ = ?0.05 ± 0.50 MHz. The higher-J and -K states of the v₅ = 1 state appear to be purturbed.     

Specific heat and crystalline electric field parameters in TmxY1−xAl2

Specific heat measurements on Tm_xY_1?xAl₂ have been performed to determine the crystalline electric field parameters in Tm_xY_1?xAl₂. We find for the ground state the Γ⁽¹⁾₅ triplet and for the Lea, Leask and Wolf parameters X = (0.47 ± 0.03) and W = (0.034 ± 0.013) meV.     

Photoluminescence measurements of the 1.55 eV band of Ge doped AℓxGa1−xAs

The photoluminescence of the 1.55 eV band of Ge doped A?_xGa_1?xAs, with x=0.30–0.33, grown by liquid phase epitaxy is presented. The broad shape was found to be due to a lattice relaxation upon optical transitions. Resonant modes with ?ω_q = 35±2 meV and ?ω_q = 45±2 meV are found for the optical band, yielding a zero phonon transition energy = 1.73±0.02 eV and a Franck-Condon shift = 0.17–0.20 eV for the optical center. The activation energy of thermal quenching yields an associated donnor binding energy of 0.17±0.04 eV. Possible mechanisms for the radiative transitions are discussed.     

Optical absorption of zinc selenide doped with cobalt (Zn1−xCoxSe) under hydrostatic pressure

Abstract

The optical absorption of the diluted magnetic semiconductor Zn_1?xCO_xSe (x = 0.02) has been measured at room temperature under hydrostatic pressure up to 14GPa in a membrane diamond-anvil cell. We found two absorption features: (i) an absorption structure in the energy range 1.6?1.8eV, with a negligible pressure shift (i.e., 0.45 ± 0.05 meV/GPa) which we have identified as the Co²⁺(3d⁷) internal transition ⁴A₂(F)→+⁴T₁(P) and (ii) an onset in the energy range 2?2.7eV which redshifts with pressure (?8.1±0.6meV/GPa). We have attributed such absorption edge to charge transfer between the ZnSe valence band and the Co²⁺(3d⁷) levels.     

On the bound states in the muonic molecular ions

Absolute cross sections for electron impact ionization and dissociation of OH⁺ and OD⁺ leading to the formation of the OH²⁺, O⁺, O²⁺, O³⁺ and D⁺ ions have been measured by applying the animated electron-ion beam method in the energy range from the respective reaction thresholds up to 2.5 keV. The maximum of the single ionization cross section is found to be (0.95? ± ?0.02) × 10^?19 cm² at 155 eV. The maximum total cross sections for O⁺ and D⁺ fragments production are observed to be (15.7? ± ?0.2) × 10^?17 cm² at 95 eV and (10.8? ± ?0.5) × 10^?17 cm² at 95 eV, respectively. The cross sections for O²⁺ and O³⁺ are much smaller, (5.37? ± ?0.04) × 10^-18 cm² at 135 eV and (7.95? ± ? 0.23) × 10^-20 cm² at 315 eV, respectively. The collected data are analyzed in details in order to determine separately the contributions of dissociative excitation and of dissociative ionization to the O⁺ and D⁺ fragments production.     

Chemically driven diffusion of Pd in the surface region of Zn(0001): An ultraviolet photoemission investigation

The diffusion of deposited Pd through the (0001) surface region of zinc has been studied with photoemission at hν = 21.2 eV by following the time evolution of the Zn 3d and Pd 4d peaks for a Pd initial coverage of 1, 3, 10 and 15 monolayers. The time decay of the Pd 4d signal is explained with a model where the diffusion coefficient D is not constant; it is (4.6 ± 0.5) × 10^?19 cm² s^?1 for t?7000s, then decreases to (5.5 ± 1) × 10^?20 cm² s^?1 for t ? 15,000 s. The D values correlate well with the spectroscopic results on the valence state evolution during diffusion. At short times (higher D) the spectra show an electron energy gain of Pd atoms during diffusion while at higher time (lower D) this gain is negligible. The initial diffusion is chemically driven while at longer times the diffusion becomes gradually entropic.     

High resolution spectroscopy of prompt and metastable decaying levels in highly ionized argon,especially of the metastable3 P 2-state of Ar16+ and the4 P 5/2-state of Ar15+

Besides the prompt x-ray emission of Ar-ions, the metastable decay of the heliumlike³ P ₂- and the lithiumlike⁴ P _5/2-levels of highly ionized Ar¹⁶⁺ and Ar¹⁵⁺ atoms has been observed in a foil-excited beam using a flat-crystal spectrometer. Due to the highx-ray energy resolution of the spectrometer the two³ P ₂ →¹ S ₀ and⁴ P _5/2 →² S _1/2 transitions could be resolved. The experiment yielded (3128 ±2) eV for the³P₂ → and (3091 ± 2)eV for the⁴ P _5/2 →² S _1/2 transition energy respectively. Using a time of flight technique the lifetimes of the³ P ₂- and the⁴ P _5/2-states were determined to be (1.44 ±0.09)ns and (0.66 ± 0.05) ns.     

Studies on the synthesis and characterization of Zn1− x Cd x S and Zn1− x Cd x S:Mn2+ semiconductor quantum dots

Quantum dots (3–4?nm) of Zn_{1? x} Cd _x S (both free of Mn²⁺ and with Mn²⁺ incorporated) were synthesized through a novel solvothermal-microwave irradiation technique. Detailed structural analysis of the Zn_{1? x} Cd _x S and Zn_{1? x} Cd _x S:Mn²⁺ (x?=?0, 0.25, 0.5, 0.75 and 1) materials was carried out using powder X-ray diffraction technique. For all the compositions, the crystallite size was controlled to less than 1.5?nm. The optical energy gap for Zn_{1? x} Cd _x S was found to vary from 3.878 to 2.519?eV and for Zn_1?x Cd _x S:Mn²⁺ it varies from 3.830 to 2.442?eV when x is increased from 0 to 1. Overall, the optical energy gap could be tuned from a minimum of 2.442?eV to a maximum of 3.878?eV. DC conductivity analysis (from 40°C to 150°C) and electrical energy gap analysis for all the compositions were also performed. The dc conductivity for Zn_{1? x} Cd _x S solid solutions varies from 0.3840?×?10^?10 to 8.7782?×?10^?10?mho/m at 150°C and for Zn_{1? x} Cd _x S:Mn²⁺ it varies from 0.5751?×?10^?10 to 9.8078?×?10^?10 mho /m at 150°C (for x?=?0 to x?=?1). The method of synthesis and the results observed in this investigation may assist in the fabrication of optical devices when the required operational performance falls under the range observed in the study.     

Resonant neutron capture in 40Ca

The neutron capture cross section of ⁴⁰Ca has been measured with ≈ 0.2 % energy resolution below E_n = 300 keV. Resonance parameters have been extracted for many new p- and d-wave resonances. Gamma-ray spectra were also measured following capture in one doublet and two resolved resonances below 50 keV. Strong feeding of low-lying p-wave levels was observed in all cases. Calculations showed that valence transitions were inadequate to account for the observed dominance of these transitions and a further mechanism is required. The average resonance parameters obtained from the data are as follows: 〈D〉 = 37 + 4keV, 10⁴S₁ = 0.16 ± 0.05, 10⁴S₂ = 2.0 ± 0.7. The average radiative widths and standard deviations of their distributions were found to be strongly l-dependent as follows: 〈Γ_γ〉_s = 1.5 ± 0.9 eV, 〈Γ_γ〉_p = 0.36 ± 0.09 eV and 〈Γ_γ〉_d = 0.7 ± 0.4 eV.     

Chromium tracer diffusion in NiO crystals

Diffusion of ⁵¹Cr in NiO single crystals in air has been studied by the tracer-sectioning technique. In the temperature range 1192–1642°C, the diffusion coefficient can be expressed by the Arrhenius expression D=D_oexp(-Q/RT), with D_o=(8·6±1·2)×10^?3 cm²/sec and Q=67·4±1·1 kcal/mole. The use of a high specific-activity tracer and a special configuration for the diffusion anneal prevented the self-dopling effect found by Seltzer and the evaporation of chromium from the sample surface. The present results, in conjunction with published results on nickel self-diffusion in NiO and interdiffusion in the NiO?Cr₂O₃ system, are used to determine a chromium ion-vacancy binding energy of about 5 kcal/mole in pure NiO.