Infrared modulated reflectance spectra of n and p type gallium antimonide and n type indium antimonide

We have observed the modulated reflectance spectra of n and p type GaSb at 300, 80, and 5 K from 0.56 to 2 eV. The modulated reflectance of intrinsic n type InSb was measured at 80 K from 0.2 to 2 eV. The “dry sandwich” vapor deposition technique was used to make the electroreflectance (ER) samples. The low-temperature spectrum of the undoped p type GaSb sample shows three peaks at the band edge that could be associated with transitions from the top of the valence band, the light (0.903 eV) and heavy (1.014eV) hole state Fermi levels to the conduction band. The energies of the observed peaks are in agreement with the Fermi level determination from Hall effect and Faraday rotation measurements. This modulation mechanism is based on band population effects. The ER signal of InSb under flatband condition at 80 K has five half oscillations at the direct band gap. The contribution of piezoelectric strain to ER is present since the dc bias required to achieve flatband condition is different at the band gap than at E₁. The ER signal corresponding to the direct gap energy E₀ and to the spin-orbit energy E₀ + Δ₀ was determined in the n and p type samples of GaSb at different temperatures. We have measured the intrinsic energy gap in GaSb at room temperature. E_g = 0.74 eV. The corresponding spin-orbit splitting was found to be Δ₀ = 0.733 ± 0.002 eV.     

Optical spectroscopy in semiconductors in high magnetic fields using polarization modulation

Differential magneto-reflection spectra in the 1.8 to 5 eV energy range are presented for GaP, Ge, GaAs, InSb, and Si. These spectra were obtained using polarization-modulated light from [111] faces of samples in the Faraday configuration. In medium strength magnetic fields, the results are similar to those obtained using other techniques, such as electric field modulation and wavelength derivative spectroscopy in the same energy range. In higher magnetic fields (B of 50 kG or larger) more detailed structure is resolved. Oscillations attributed to Landau level transitions have been seen at critical points in the visible in InSb and in GaSb in fields up to 100 kG. At the E₁ edge an unexpected anomaly has been observed in InSb. Within experimental error, the Landau levels are equally spaced for n < 5 and n > 5 but at n = 5 there is an abrupt change in the cyclotron energy. Here n is the usual magnetic quantum number. The transverse masses are measured as $\text{m}\text{μ}{}_1\text{= 18.9 ± 0.9 (n < 5)}$, and $\text{m}\text{μ}{}_2\text{= 16.0 ± 0.9 (n > 5)}$. Possible causes of this effect are discussed. In GaSb at the corresponding threshold. Landau level observations give a mass value of $\text{m}\text{μt}\text{= 21.4 ± 1.5}$.     

First direct observation of strong interaction spin-orbit effects in antiprotonic atoms

The strong ¯p-nucleus spin-orbit interaction was investigated in a measurement of the strong-interaction effects of the 9→8 transition in ¯p ¹⁷⁴Yb at the Low-Energy Antiproton Ring (LEAR) at CERN. This measurement was part of an experimental programme where, for the first time, the fine-structure components of the last observable X-ray transition in a ¯p atom, which carries information on the strong ¯p-nucleus interaction, were resolved and studied individually. The observed splitting ΔE _exp=2408±26 eV consists of the electromagnetic fine-structure splitting ΔE _FS=2350 eV and an additional splitting Δ?=58±26 eV. In addition, one finds a significant difference in the level widths of Δ=195±59 eV with the larger value_?=1216±41 eV for the lower fine-structure level. This experiment follows an earlier measurement on ¯p ¹³⁸Ba, where the transition 8→7 is influenced by the strong interaction. In this case, however, the fine-structure components could not be resolved. The results for¹⁷⁴Yb may be attributed to a spin-orbit (LS) term in the complex strong-interaction potential.     

Polariton effect in degenerate valence band semiconductors

We present a model which describes excitonic polariton effect for direct gap semiconductors where the valence band is degenerate, so that two (“light” and “heavy”) exciton dispersion curves exist and give rise to three polariton branches. It is shown that the quantity $\text{δ = Δ ?}\text{1}\text{3}\text{E}{}_{\mathrm{LT}}$ is an important parameter in this case, Δ and E_LT being respectively the exchange energy and the longitudinal transverse splitting. A comparison with the available data, extracted from Resonant Brillouin Scattering in GaAs, is carried out. It is shown that when only the uppermost and lowest polariton branches can be detected, the measured separation Δ_exp between these two branches is equal to the longitudinal transverse splitting with a good approximation. In the general case the exact relation between Δ, E_LT and Δ_exp is derived.     

Rotational analysis of the 7390- and 7937-Å bands of NO2 by means of Fourier transform spectroscopy

We have extended to higher N and to K_a = 3 and 4 the rotational analysis of the 7390-Å band of NO₂ performed by K. E. Hallin and A. J. Merer (Canad. J. Phys.55, 2101–2112 (1977)). The lines belong to a perturbed parallel band for which Hallin and others have proposed the vibrational assignment (2 13 1)-(0 0 0) within the electronic ground state. These authors presumed that this band borrows its intensity through a vibronic coupling (spin-orbit and/or Coriolis coupling) from the stronger (0 2 0)-(0 0 0) band of the $\text{A}\text{?}\text{-}\text{X}\text{?}$ electronic system at 7460 Å. We have observed about 900 transitions belonging to the K_a = 0, 1, 2, 3, 4 subbands of the (2 13 1)-(0 0 0) band for N values going up to about 23, and 300 lines of the “hot” band (2 13 1)-(0 1 0). We have also looked for spin-orbit-induced transitions and we have detected about 400 transitions with ΔN ≠ ΔJ. Among them ΔN = ±2 transitions with ΔK_a = 0 or ± 2 have been observed, indicating that N and K_a are no longer good quantum numbers, and demonstrating clearly the existence of rovibronic interactions perturbing the upper levels of the transitions.     

Pulsed magnetic field study of Fe2+ in some fluosilicates

Pulsed field experiments up to 450 kOe have been performed on FeSiF_6.6H₂O. We interpret the data: (i) in terms of spin hamiltonian constants: D = 12.3± 0.2 cm^-1 (E = 0.54cm^-1 being known from EPR data); (ii) in terms of axial-crystal-field parameters: $\text{δ}\text{λ}\text{=}\text{orbital trigonal splitting/spin-orbit coupling}\text{= 15 ± 2; λ = -100 ± 7cm}{}^{\mathrm{?1}}$. The magnetic axis is found to deviate from the cristallographie c axis by an angle 1° < θ < 2°. The adiabatic cooling obtained during the pulse is discussed.Similar experiments on Fe_0.15Zn_0.85SiF_6.6H₂O and Fe_0.30Zn_0.70SiF_6.6H₂O single crystals are reported; in both cases we measure $\text{D}\text{g}{}_{\mathrm{\parallel }}\text{= 6.0 ± 0.1cm}{}^{-1}$. Using EPR data, we obtain D = 14.3cm^-1, λ ～ ?75cm^-1, δ ～ 195cm^-1; using Mössbauer data, we obtain D = 15.3cm^-1, λ ～ ?88cm^-1, δ ～ 185cm^-1.     

ΔK = 2 transitions in H2CO and D2CO

Weak transitions of the type ΔJ = ± 1, $\text{Δ}\text{K}{}_{\mathrm{a}}\text{= ? 2}$, ΔK_c = ± 3 have been observed in H₂CO and D₂CO by the millimeterwave double resonance method and also by direct absorption with a Stark modulated spectrometer. The addition of these new transitions in a least-squares analysis, in which all previously known microwave and millimeterwave data are also included, results in an improved set of rotational and distortion constants.     

Intensities of rotational lines in first overtone bands for axially symmetric molecules of the group C3v

The interaction of vibration and rotation is considered in the computation of the intensities of rotational lines in the first overtone bands of axially symmetric molecules of the group C_3v. The calculation utilizes the contact transformation method through first order of approximation as outlines by Hanson and Nielsen. General formulas for the intensities of the lines in the first overtone bands 2ν_n and 2ν_m are obtained, where n and m denote normal modes of species A₁ and E, respectively. It is found that to this order of approximation the usual selection rules ΔJ = 0, ±1 and ΔK = 0 are observed for the parallel overtone band 2ν_n. For the overtone band 2ν_m, the selection rules are more complicated, being ΔJ = 0, ±1; Δl_m = 0 and ΔK = 0, Δl_m = ±2 and $\text{Δ}\text{K = ?1}$, or Δl_m = ±2 and ΔK = ±2.     

On the derivation and analysis of the spin S XY-model susceptibility series expansions

We have derived 10th order series expansions for the free energy and 9th order ones for the fluctuation of the order parameter in the spin-SXY-model on the f.c.c. lattice for S = $\text{1}\text{2}$, 1, $\text{3}\text{2}$, 2, 3, 4, 6 and 8. Confluent singularity analyses of the fluctuation series confirm the universality hypothesis, with critical exponent γ₁ = 1.33±0.02 and correction-to-scaling exponent Δ₁ = 0.6±0.2. These values also agree with the results for S = ∞.     

Some studies of T = 32 states in 17F

Measurements have been made of some parameters of the second and sixth $\text{T =}\text{3}\text{2}$ states in ¹⁷F. For the second state, the resonance energy was found to be E_p = 12.707 ± 0.001 MeV (E_n = 12.550±0.001 MeV), which agrees with and improves on the accuracy of earlier work. For the sixth $\text{T =}\text{3}\text{2}$ state, at E_p = 14.435 MeV, the γ-decay was determined to be predominantly γ₀ with a branch to the first excited state of Γ(γ₁)/Γ(γ₀) ≦ 0.14. Together with other work, this determines J^π to be $\text{3}\text{2}{}^{\mathrm{?}}$. The capture strength is found to be (2J + 1)Γ_pΓ_γ/Γ = 11.4 ± 2.6 eV.     

Hydrogen burning of 20Ne and 22Ne in stars

The ²⁰Ne(p, γ)²¹Na capture reaction has been studied in the energy range E_p = 0.37–2.10 MeV. Direct-capture transitions to the $\text{332 (}\text{5}\text{2}{}^{\mathrm{+}}\text{)}\text{and}\text{2425}\text{keV}\text{(}\text{1}\text{2}{}^{\mathrm{+}}\text{)}$ states have been found with spectroscopic factors of C²S(1d) = 0.77±0.13 and C²S(2s) = 0.90±0.12, respectively. The high-energy tail of the 2425 keV state, bound by 7 keV against proton decay, has also been observed in the above energy range as a subthreshold resonance. The excitation function for this tail is consistent with a single-level Breit-Wigner shape for a γ-width of Γ_γ = 0.31±0.07 eV at E_x = 2425 keV. The extrapolation of these data to stellar energies gives an astrophysical S-factor of S(0) = 3500 keV · b. Two new resonances at E_p = 384±5 and 417± 5 keV have been observed with strengths of ωγ = 0.11±0.02 and 0.06±0.01 meV, corresponding to the known states at and 2829 keV (presumably $\text{9}\text{2}{}^{\mathrm{+}}$), respectively. For the known E_p = 1830 keV resonance, a strength of ωγ = 1.0± 0.3 eV and a total width of Γ = 180± 15 keV were found. Branching ratios as well as transition strengths have been obtained for these three states. The Q-value for the ²⁰Ne(p, γ)²¹Na reaction (Q = 2432.3 ± 0.5 keV) as well as excitation energies for many low-lying states in ²¹Na have been measured. No evidence was found for the existence of the state reported at E_x = 4308±4 keV.In the case of ²²Ne(p, γ)²³Na, direct-capture transitions to six final bound states have been observed revealing sizeable spectroscopic factors for these states. The astrophysical S-factor extrapolated from these data to stellar energies, is S(0) = 67 ± 12 keV · b.The astrophysical as well as the nuclear structure aspects of the present results are discussed.     

Luminescence above the gap in heavily Zn-doped GaAs

Several distinct features have been observed in the photoluminescence spectrum of heavily Zn-doped GaAs, in the range between 1.65eV to 2.25eV. They are attributed to direct recombination across the E_o+?_o gap and to indirect processes related to X^c₁ and X^c₃. The X^c₁ minima are thus located to be 1.935±0.01eV above the top of the valence band at 100K. Their shear deformation potential $\text{E}$^X₂ is found to be $\text{E}{}^{\mathrm{X}}{}_2\text{=5.5±2eV}$.     

Optical and electrical energy gaps of the n-type impure silicon at 300 K

The band-gap narrowing ΔE_{g, opt} and ΔE_{g, elec} (or ΔE_{g, eff}) for optical and electrical energy gaps of the n-type impure silicon at 300 K, are investigated based on simplified models of heavily doped semiconductors. It is suggested that, for $\text{4 × 10}{}^{19}\text{cm}{}^{-3}\text{? n}{}_0\text{? 3 × 10}{}^{20}\text{cm-3}\text{, ΔE}{}_{\mathrm{g,\; elec}}\text{(or ΔE}{}_{\mathrm{g,\; eff}}\text{)}$ is significantly larger than ΔE_{g, opt}, in good agreement with observed results. This difference is caused especially by the effect of the polaron.     

The 16O + p → 17F (T = 32) resonances at Ep = 11.26,12.71 and 14.57 MeV

Excitation functions for ¹⁶O+p reactions have been measured with high energy resolution in the region of the first, second and seventh $\text{T =}\text{3}\text{2}$ resonances in ¹⁷F at extreme backward angles. The observed resonance shapes have been analyzed with a single-level resonance formula taking the off-resonance spin-flip amplitude into account. The resonance parameters of the ¹⁷F first $\text{T =}\text{3}\text{2}$ state studied with special emphasis are E_x = 11193.3 ± 2.3 keV, Γ = 200 ± 40 eV and Γ_p0 = 19 ± 3 eV. This result and other results are compared with previous studies and theoretical predictions. The comparison with data of the mirror nucleus ¹⁷O is discussed with respect to the observed charge asymmetry of the isospin-forbidden particle decay widths.     

The excitonic absorption of CdS under pressure

Abstract

We have investigated the pressure dependence of the absorption edge of tlie E_A-E_B- and the E_C-excitons of 1pi thick CtlS(hex) crystal slabs. We obtaiurd dE_Θ/dP =dE_c/dP = 47±3 meV/GPa for T=300K and dE_A/dP= dE_B/dP = 43±3 meV/GPa for T=78K. With tliese values we were able to determine the crystal-field splitting (68f4 nieV) aid the spin-orbit splitting (26±2 meV). The resulting pressure shifts of tlie rxcitonic energies were in agreement witli a κ · p-calculation of tlie transition energies using tlie perturbation niatrix of G.E. Pikus for Δ_so ? Δ_c. The refractive Index n‖c was iiieasured for T=300K up to 2.2 GPa and described by Marples Model.     

Zeeman splitting of the density of states of superconducting Ga thin films

The tunneling conductance $\text{d}\text{I}\text{d}\text{V}$ of Al-Al₂O₃-Ga junctions in a parallel magnetic field reveals Zeeman splitting of the superconducting quasiparticle density of states of the Ga. The magnitude of the splitting implies an unexpectedly small spin-orbit parameter b=0.6.     

Internal rotation and molecular structure of ethaneselenol by microwave spectroscopy

The microwave spectra of ethaneselenol and its deuterated and ¹³C-substituted species were measured and assigned for the gauche and trans isomers. The double minimum splittings in the gauche isomers were directly observed for the species having a symmetry plane in the frame part. The rotational constants and the torsional splitting of the gauche isomer of the parent species were determined to be A = 27 148.86 ± 0.05, B = 3 623.68 ± 0.01, C = 3 399.21 ± 0.03, and Δν = 1 083.33 ± 0.04 MHz. From the torsional splittings of the parent and SeD species together with the vibrational frequencies already reported by Durig and Bucy, the Fourier coefficients of the selenol internal rotation potential function were determined to be V₁ = ?44 ± 17, V₂ = ?260 ± 3, V₃ = 1202 ± 16, and V₆ = ?43 ± 9 cal/mole. From the rotational constants obtained, the r_s structural parameters of the gauche and trans isomers were determined. The structural parameters in the skeletal part for the gauche isomer are $\text{r}\text{(CC) = 1.524}\text{A}\text{?}$, $\text{r}\text{(CSe) = 1.957}\text{A}\text{?}$, $\text{r}\text{(SeH) = 1.467}\text{A}\text{?}$, α(CCSe) = 113°31′, α(CSeH) = 93°05′, and the dihedral angle τ(CCSeH) = 61°39′. Those for the trans isomer are $\text{r}\text{(CC) = 1.525}\text{A}\text{?}$, $\text{r}\text{(CSe) = 1.962}\text{A}\text{?}$, $\text{r}\text{(SeH) = 1.440}\text{A}\text{?}$, α(CCSe) = 108°43′, and α(CSeH) = 93°30′. These parameters were compared with the corresponding ones of ethanethiol.     

Infrared-radio frequency double resonance observations of pure rotational Q-branch transitions of methane

The $\text{F}{}_2{}^{\mathrm{(2)}}\text{← F}{}_1{}^{\mathrm{(2)}}$ and $\text{F}{}_2{}^{\mathrm{(2)}}\text{← F}{}_1{}^{\mathrm{(1)}}$ transitions of the J = 7 levels of the ground state of CH₄ have been observed by infrared-radio frequency double resonance using the 3.39 μ HeNe laser line. The transition frequencies are 423.02 ± 0.02 MHz and 1246.55 ± 0.02 MHz, respectively. Using these frequencies and the splitting of the E and F₂ levels of the J = 2 state calculated from the molecular beam magnetic resonance spectra of Ozier, the centrifugal distortion constants are derived to be D_t = 132933 ± 10 Hz, H_4t = ? 16.65 ± 0.2 Hz, and H_6t = 10 ± 1 Hz. The J = 15 E⁽¹⁾ → E⁽²⁾ microwave transition is predicted as 14150 ± 9 MHz.     

20Ne + n → 21Ne(T = 32) resonances

$\text{T =}\text{3}\text{2}$ resonances in ²¹Ne have been studied in measurements of the total neutron cross section of ²⁰Ne using the 190 m neutron time-of-flight facility of the Karlsruhe Isochronous Cyclotron. The high time-of-flight resolution of 6.6 ps/m enabled the study of sharp $\text{T =}\text{3}\text{2}$ resonances in ²¹Ne with an effective energy resolution of up to 4000. Five $\text{T =}\text{case3}\text{2}$ levels have been observed as sharp resonances allowing the precise determination of total width Λ, partial decay with Λ_no and resonance energy E_R. The c.m. resonance parameters of the first $\text{T =}\text{3}\text{2}$ state in ²¹Ne are E_R = 2098.6 ± 0.3 keV, Λ = 2.2 ± 0.5 keV and Λ_no = 0.21 ± 0.05 keV. Upper limits for the partial decay widths are deduced for those $\text{T =}\text{3}\text{2}$ levels which do not appear as resonance anomalies. A search for additional $\text{T =}\text{3}\text{2}$ states was undertaken. The resonance energies are discussed in the framework of the isbobaric mass multiplet equation. The decay widths are compared with shell-model predictions of isospin mixing and the systematics of isospin-non-conserving particle decays.