Tensile properties of microtubules: A study by nonlinear molecular structural mechanics modelling

A nonlinear molecular structural mechanics (MSM) model is proposed in this paper for studying the tensile properties of microtubules (MTs). In the nonlinear MSM models, the interactions between tubulin monomers in MTs are treated as nonlinear axial and torsional springs, whose stiffness coefficients are extracted from all-atom molecular dynamics simulations. The Young's modulus and fracture properties of MTs under tension extracted from the present nonlinear MSM models are found to agree well with the existing simulation and experiment results, which shows the efficiency and accuracy of the proposed nonlinear MSM models. In addition, the nonlinear MSM models are also extended to investigate the tensile properties including Young's modulus and fracture strain of MTs possessing lattice defects. The results obtained from nonlinear MSM models are utilized to develop a predictive equation for quickly predicting the tensile properties of MTs with different lattice defect levels.     

Manufacturing technology for the fabrication a discrete actuator using a magnetic shape memory alloy

To demonstrate the feasibility of combining thin-film fabrication techniques and discrete MSM stripes, a hybrid actuator system was designed. The actuator system consists of four thin-film stators and two discrete MSM stripes mounted in a row. For creating an actuator motion, one of the MSM stripes has to be excited by a pair of stators to cause variant switching. This results in an elongation plus a compression of the second stripe and vice versa. The technologies required for fabricating the thin-film stator are sputter deposition, PECVD, electroplating, etching, and photolithography. This paper describes the fabrication process for a thin-film stator used for the MSM micro actuator system. It also presents technology study results indicating the feasibility of the planned fabrication sequence.     

Plasmonic modulator based on gain-assisted metal–semiconductor–metal waveguide

We investigate plasmonic modulators with gain material to be implemented as ultra-compact and ultra-fast active nanodevices in photonic integrated circuits. We analyze metal–semiconductor–metal (MSM) waveguides with InGaAsP-based active material layers as ultra-compact plasmonic modulators. The modulation is performed by changing the gain of the core, that results in different transmittance through the waveguides. A MSM waveguide enables high field localization and therefore high modulation speed. Bulk semiconductor, quantum wells and quantum dots, arranged in either horizontal or vertical layout, are considered as the core of the MSM waveguide. Dependences on the waveguide core size and gain values of various active materials are studied. The designs consider also practical aspects like n- and p-doped layers and barriers in order to obtain close to reality results. The effective propagation constants in the MSM waveguides are calculated numerically. Their changes in the switching process are considered as a figure of merit. We show that a MSM waveguide with electrical current control of the gain incorporates compactness and deep modulation along with having a reasonable level of transmittance.     

Optimization of reversible LPFG for sensing application

We report here for the first time to our knowledge the characterization of mechanically induced long period fiber gratings in novel MSM fiber structure. Reversible grating of same period and length was induced in single mode fiber, multimode fiber and novel multimode-singlemode-multimode (MSM) fiber structure. The spectral response of reversible LPFG in SMF is verified experimentally as well as from simulation results and then compared with the experimental spectral response of reversible LPFG in multimode fiber and MSM fiber structure. Reversible LPFG in novel MSM fiber structure is the most optimized and suitable grating for sensing application. For this grating we have obtained single resonant wavelength over a wide wavelength range and maximum transmission loss peak of around 20 dB.     

Absorption enhancement of 980 nm MSM photodetector with a plasmonic grating structure

We present finite-difference time-domain (FDTD) simulation to analyze the optical absorption enhancement of metal-semiconductor-metal (MSM) photodetectors employing plasmonic grating structures. Simulation results show that the combination of a subwavelength aperture and a nano-structured metal grating results in up to 16 times enhancement in optical absorption, in comparison to conventional MSM photodetector structures employing only a subwavelength aperture.     

Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes

This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor metal （MSM） structure by dieleetrophoresis and studying on its electrical characteristics by using current-voltage （Ⅰ - Ⅴ） measurements. An electronic model with two back to back Sehottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured Ⅰ - Ⅴ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.     

Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

We have analyzed threshold gains and lasing modes in GaN-based photonic crystal (PC) surface emitting lasers (PCSELs) by using the multiple scattering method (MSM) for triangular-lattice PC patterns. Moreover, GaN-based PCSELs with different boundary shapes have been fabricated and measured. The lasing mode at the Γ band edge of GaN-based PCSELs can be identified by using the angled resolved spectroscopy and matched well to the results calculated by MSM. Threshold conditions in the GaN-based PCSELs with different boundary shapes are obtained by optical pumping and agree well with simulation results.     

Growth of Sb overlayers on GaAs(110)

The GaAs(110)-Sb system is studied with AES, EELS, LEED, ellipsometric spectroscopy and SEM. As indicated by EELS Sb atoms are adsorbed first on Ga sites. The AES spectra can be explained by assuming a simultaneous growth of multiple layers on top of a well ordered homogeneous first monolayer (MSM growth mode). The results of ellipsometric spectroscopy confirm the inhomogeneity of the Sb-film as proposed by the MSM mode. Desorption experiments and EELS demonstrate a strong chemical bonding between the first Sb monolayer and the substrate.     

All-fiber optic acoustic sensor based on multimode-single mode-multimode structure

A simple and low cost optical fiber acoustic sensor based on multimode-single mode-multimode (MSM) fiber structure is presented. The optical coupling efficiency between hetero-core fibers spliced structure is modulated by acoustic pressure through a thin metal foil. Acoustic wave is detected by measuring the intensity change of transmission light. Experiments are carried on to testify the performance of MSM fiber acoustic sensor and the experimental results show that the acoustic wave can be sensitively detected within 11 kHz frequency range.     

Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films

Systematic characterization of flicker noise was conducted on GaN-based metal-semiconductor-metal (MSM) interdigitated devices. The devices were fabricated on both the regular GaN-on-sapphire (type A) and laser de-bonded films followed by layer transfer of hydride vapor phase epitaxy-grown GaN films to Si substrates (type B). Experimental results indicated no significant degradation in the I-V characteristics for Schottky MSM devices fabricated on type B films compared to those fabricated on type A films. However, substantial increase in the flicker noise level, particularly in the low-temperature regime, is observed among the ohmic MSM devices fabricated on type B films. The experimental data suggest that material degradation occurs at the vicinity of the GaN-sapphire interface, while in regions close to the GaN film surface there is practically no change in the film quality. This is supported by finite element simulation of the temperature of the film during laser irradiation. The results indicate that the temperature dropped from 1400 K at the GaN-sapphire interface to about 1000 K within 0.5 μm away from the interface stipulating that material degradation occurs only within 0.5 μm from the GaN-sapphire interface.     

Effect of the optical excitation signal intensity on the impulse response of a metal-semiconductor-metal photodiode

The effect of the optical excitation signal intensity on the impulse response of a photodetector based on a set of metal-semiconductor-metal (MSM) rectifier contacts is studied. The response of the detector is better at a low optical excitation signal. When the energy of an optical excitation pulse is high, the response can be improved by increasing the bias voltage. The advantages of a GaN-based MSM diode in detecting high- energy radiation pulses are established. It is shown that the speed of the GaN-based MSM detector may reach 25 ps for a 60-pJ optical excitation pulse at a wavelength of 290 nm.     

Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

The nitrogen-containing conventional A^IIIB^V semiconductor alloys, so-called diluted nitrides (A^IIIB^V-N), have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs_1-xN_x/GaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated     

Dark current suppression in an erbium-germanium-erbium photodetector with an asymmetric electrode area

In this work, suppression of the dark current level in a metal-semiconductor-metal (MSM) photodetector fabricated on the intrinsic (i) Ge is achieved by exploiting (1) the Er electrode, providing a relatively high hole barrier, and (2) the concept of asymmetric electrode area, to minimize the Schottky barrier height lowering effect. Compared with a symmetric MSM photodetector fabricated with Ti electrodes, the dark current level was reduced by a factor of about 80. This low dark current i-Ge MSM photodetector is promising for applications requiring low power and a high photo-to-dark-current ratio.     

Impulse response of a heterojunction MSM photodiode

A two-dimensional model is used to simulate drift of photogenerated carriers in the active region of high-speed photodiodes (metal-semiconductor-metal (MSM) rectifying contacts) that are made as a conventional planar structure and a structure with a heterojunction. These two types of photodiode structures are compared in terms of the impulse response and quantum efficiency. Variation of the planar MSM diode response with decreasing size of the interdigitated contact system is analyzed. The possibility of improving the speed of response of the MSM diode is discussed. It is shown that the structure with an InP/GaInAs heterojunction considerably modifies the transport of photogenerated carriers and remarkably improves the response speed.     

Relaxation efficacy of paramagnetic and superparamagnetic microspheres in liver and spleen

A distinct knowledge of the relationship between physiochemical properties, cellular distribution and relaxation efficacy of particulate MR contrast media is needed for the development of tissue specific contrast compounds. To study these relations paramagnetic gadolinium labelled microspheres and superparamagnetic iron oxide microspheres (MSM) were injected intravenously to rats. The T1 and T2 relaxation times of the liver and spleen were recorded and the gadolinium tissue content quantified. A clear relationship between the gadolinium dose and the gadolinium concentration of the liver and spleen was observed while the T1 of the tissues remained unchanged. After injection of MSM, T2 of liver and both T1 and T2 of spleen decreased dose-dependently. The splenic relaxation efficacy of MSM was higher compared with that of liver, probably due to the morphology of the spleen allowing a scattered cellular sequestration of MSM. To mimic a uniform tissue distribution of the contrast agents, the liver and spleen samples were homogenized and a marked increase in the intrinsic relaxation efficacy of both the paramagnetic and superparamagnetic microspheres was observed.     

蓝紫光氮化镓光子晶体面射型激光器

设计、制作了蓝紫光氮化镓光子晶体面射型激光器结构,并测量其光学性质,探讨了光子晶体的晶格常数、边界形状及晶格种类对激光器特性的影响。激光器结构采用有机金属化学气相沉积法配合电子束光刻及感应耦合等离子体干蚀刻等技术制作。由角度解析光致发光系统测得绕射图案、激光发射光谱及发散角等光学性质。同时,使用平面波展开法及多重散射法计算光子晶体的能带结构与阈值增益。由实验结果得出,可由改变光子晶体的晶格常数达到调变激光器操作模态的目的。此外,光子晶体的边界形状对激光器波长及半高宽并无显著的影响,但圆形边界的阈值激发能量密度比六角形边界低0.3 mJ/cm²。另一方面,将六角晶格、四角晶格与蜂巢晶格的晶格种类进行比较,蜂巢晶格具有较小的激发能量密度（1.6 mJ/cm²）及发散角（1.3°）,而四角晶格的激发能量密度（3.8 mJ/cm²）及发散角（2.2°）为三者之中最大。多重散射法求得的阈值增益与实验结果相吻合,可视为快速有效设计光子晶体激光器结构的工具。本文研究成果对今后发展高功率蓝紫光氮化镓光子晶体面射型激光器具有指导意义。     

AlGaN-based high-performance metal–semiconductor–metal photodetectors

Design, structure growth, fabrication, and characterization of high performance AlGaN-based metal–semiconductor–metal (MSM) photodetectors (PD) are reported. By incorporating AlN nucleation and buffer layers, the leakage current density of GaN MSM PD was reduced to 1.96 × 10⁻¹⁰ A/cm² at a 50 V bias, which is four orders of magnitude lower compared to control devices. A 229 nm cut-off wavelength, a peak responsivity of 0.53 A/W at 222 nm, and seven orders of magnitude visible rejection was obtained from Al_0.75Ga_0.25N MSM PD. Two-color monolithic AlGaN MSM PD with excellent dark current characteristics were demonstrated, where both detectors reject the other detector spectral band with more than three orders of magnitude. High-speed measurements of Al_0.38Ga_0.62N MSM PD resulted in fast responses with greater than gigahertz bandwidths, where the fastest devices had a 3-dB bandwidth of 5.4 GHz.     

SEWDarkM

A number of observed phenomena in high energy physics and cosmology lack their resolution within the Standard Model of particle physics. These puzzles include neutrino oscillations, baryon asymmetry of the Universe, existence of Dark Matter and inflation. We discuss the suggestion, based on the νMSM (an extension of the Standard Model by three light singlet fermions) that all these problems can be solved by new physics which exists only below the electroweak scale. We describe the formalism which allows to compute from first principles of quantum field theory and statistical physics the abundance of dark matter in this theory. Predictions of the νMSM are compared with results of different cosmological and astrophysical observations.     

An analytical expression for the electric field in MSM structures

In this work the conformal mapping is used to determine an analytical expression for the electric field in MSM structures. The expression simplifies the analysis of optically generated carriers transport, i.e. the determination of the response of the MSN photodetectors. It can also be useful in the analysis of MSM electrooptical modulators operation.