Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Fabrication of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Al structure by nitric acid oxidation at room temperature

A thick Al₂O₃/aluminum (Al) structure has been fabricated by oxidation of Al with 68wt% and 98wt% nitric acid (HNO₃) aqueous solutions at room temperature. Measurements of the Al₂O₃ thickness vs. the oxidation time show that reaction and diffusion are the rate-determining steps for oxidation with 68wt% and 98wt% HNO₃ solutions, respectively. Observation of transmission electron micrographs shows that the Al₂O₃ layer formed with 68wt% HNO₃ has a structure with cylindrically shaped pores vertically aligned from the Al₂O₃ surface to the Al₂O₃/Al interface. Due to the porous structure, diffusion of HNO₃ proceeds easily, resulting in the reaction-limited oxidation mechanism. In this case, the Al₂O₃/Al structure is considerably rough. The Al₂O₃ layer formed with 98wt% HNO₃ solutions, on the other hand, possesses a denser structure without pores, and the Al₂O₃/Al interface is much smoother, but the thickness of the Al₂O₃ layer formed on crystalline Al regions is much smaller than that on amorphous Al regions. Due to the relatively uniform Al₂O₃ thickness, the leakage current density flowing through the Al₂O₃ layer formed with 68wt% HNO₃ is lower than that formed with 98wt% HNO₃.     

X-ray absorption fine-structure study on the fine structure of lutetium segregated at grain boundaries in fine-grained polycrystalline alumina

Local atomic structures around the Lu³⁺ ion in a 0.1?mol%?LuO_1.5-doped fine-grained Al₂O₃, in which the doped Lu³⁺ ions segregate to the grain boundaries, was characterized by Lu L₃-edge X-ray absorption fine structure. Structural parameters in LuO_1.5-doped Al₂O₃ were determined by a curve-fitting method, and the results showed that six O^2? ions coordinate with the Lu ion in LuO_1.5-doped Al₂O₃. In addition, it was also revealed that the Lu–O interatomic distance in Lu-doped Al₂O₃ was close to that in Lu₂O₃, which was about 19% longer than the Al–O interatomic distance in undoped Al₂O₃. The present results indicated that the local atomic structures around Lu in Al₂O₃ are close to that in Lu₂O₃. It is thus supposed that atomic distances between Al³⁺ and O^2? ions in the vicinity of Lu-segregated grain boundaries are shortened in comparison with that in undoped Al₂O₃. A first-principles molecular orbital calculation was performed for the [Al₂O₉]^?12 model cluster, and the shortening of the Al–O interatomic distance was found to have an effect of increasing the ionicity in Al³⁺ ions.     

The synthesis of polycrystalline H3O+β″βAl2O3 ceramics from conventional precursor NaKβ″/βAl2O3 powders

H₃O⁺β″Al₂O₃, H₃O⁺/βAl₂O₃ and H₃O⁺β″/βAl₂O₃ /ZrO₂ ceramics of equiaxed, fine-grained microstructure were prepared by conventional synthesis techniques, gas-phase and vapour-phase ion exchange to the potassium form and field-assisted ion exchange in dilute HCl vapour to the hydronium form. The bend strength of the polycrystalline H₃O⁺β″Al₂O₃ and H₃O⁺β″/βAl₂O₃ was > 200 MPa. The conductivity of H₃O⁺β″Al₂O₃, H₃O⁺β″/βAl₂O₃ ZrO₂ was 8×10⁻⁶, 2×10⁻⁶ and 9×10⁻⁷ (Ω cm)⁻¹, respectively, at 25°C. The materials were demonstrated to perform in steam electrolysis cells at 100°C.     

SMA-g-MPEG comb-like polymer as a dispersant for Al2O3 suspensions

SMA-g-MPEG comb-like polymer is first employed as the dispersant of Al₂O₃ suspensions in this paper. The comb-like polymer has anionic polycarboxylate backbone, which makes the polymer easily absorbed on the cationic surface of Al₂O₃ particles; on the other hand, the comb-like polymer has hydrophilic MPEG side chains, which extend into the solution to provide steric repulsion after the comb-like polymer is absorbed on the surface of Al₂O₃ particles. The adsorption behavior, zeta potential, apparent viscosity, granularity and TEM images of the Al₂O₃ suspensions using SMA-g-MPEG as dispersant are investigated. The addition of SMA-g-MPEG improves the dispersibility and decreases the apparent viscosity of the Al₂O₃ suspension observably. The impacts of the length of side chains on the dispersion of Al₂O₃ suspensions are particularly discussed. The adsorbed molecular number of the dispersant decreased by increasing the length of side chains. The zeta potential of Al₂O₃ suspension is more negative by using comb-like polymer with shorter side chains. Based on the steric repulsion and adsorbed molecular number, SMA-g-MPEG with moderate length of side chain is found to have the best dispersibility for Al₂O₃ suspension.     

The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method

We produced dielectric stacks composed of ALD SiO₂ and ALD Al₂O₃, such as SiO₂/Al₂O₃, Al₂O₃/SiO₂, and SiO₂/Al₂O₃/SiO₂, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO₂/Al₂O₃ shows lowest leakage current for negative bias region below 6.4 V, and Al₂O₃/SiO₂ showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al₂O₃ and SiO₂/Al₂O₃. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO₂ (6.5 nm)/Al₂O₃ (12.6 nm) is −6.4 V, which agrees well with the experimental observation (−6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO₂ layer.     

New polymorphs of alumina: Part II μ and λ alumina

Abstract

We had reported observation of polymorphs of alumina having rare earth sesquioxide type structures in xerogel γ alumina (XGA) at high pressures and temperatures (High Pressure Research, 1998). In this paper we report observation of two additional phases at somewhat different pressures and temperatures. The XGA quenched from 5.2 GPa and 1450°C showed, besides α Al₂O₃, a new hexagonal metastable polymorph μAl₂O₃. Over a period of 10 to 12 weeks μ A1₂O₃ transforms to a stable hexagonal phase λ Al₂O₃. The cell parameters of λ Al₂O₃ are comparable with those of k Al₂O₃ found by Saalfield on dehydration of gibbsite A1₂O₃3H₂O in air at 800°C. The XGA containing 1 wt% of Cr₂O₃ yielded similar results at 4.56GPa and 1100°C. Further the XGA containing Cr showed complete transformation to n Al₂O₃ at 5.2 GPa and 1520°C.     

Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition

We report the permeation barrier properties of Al₂O₃/ZrO₂ multi-layers deposited by remote plasma atomic layer deposition. Electrical Ca degradation tests were performed to derive the water vapor transmission rate (WVTR) of Al₂O₃, ZrO₂ and Al₂O₃/ZrO₂ multi-layers at 50 °C and 50% relative humidity (RH). Al₂O₃/ZrO₂ multi-layers exhibit better barrier properties than Al₂O₃ and ZrO₂ layers, and when more individual layers were deposited in the same total thickness, the WVTR value was reduced further, indicating a better barrier property. The WVTR of the Al₂O₃ and ZrO₂ layers were 9.5 × 10⁻³ and 1.6 × 10⁻² g/m² day, respectively, but when deposited alternatively with 1 cycle of each layer, the WVTR decreased to 9.9 × 10⁻⁴ g/m² day. X-ray diffraction results indicated that ZrO₂ has a monoclinic structure but Al₂O₃ and Al₂O₃/ZrO₂ multi-layers show an amorphous structure. Cross sectional Al₂O₃/ZrO₂ multi-layer structures and the formation of a ZrAl_xO_y phase are observed by transmission electron microscopy (TEM). X-ray photoelectron spectrometry (XPS) results indicate that Al₂O₃ and ZrO₂ contain 33.7% and 37.8%, respectively, Al–OH and Zr–OH bonding. However, the ZrAl_xO_y phase contained 30.5% Al–OH and Zr–OH bonding. The results of transmittance measurement indicate that overall, Al₂O₃, ZrO₂ and Al₂O₃/ZrO₂ multi-layers show high transmittance greater than 80% in the visible region.     

New polymorphs of alumina

Abstract

We present the results of high-pressure, high-temperature studies on xerogel gamma alumina which is made up of nanocrystalline alumina and an amorphous phase. Not many studies of this type have been reported on xerogel materials. At about 5 GPa and 1400°C, the xerogel alumina transforms into a polymorphic mixture containing α Al₂O₃, B Al₂O₃ and C Al₂O₃ where the last two phases have B Ln₂O₃ and C Ln₂O₃ type structures respectively. Here Ln stands for the rare earths. The xerogel alumina containing 1 wt.% Cr₂O₃ under these conditions transforms into a polymorphic mixture containing Al₂O₃, k' Al₂O₃ and H Al₂O₃ where H Al₂O₃ has the H Ln₂O₃ type structure. For the first time, the observation of rare earth sesquioxide structures of alumina is reported. At about 5 GPa at 27°C, the xerogel aluminal transforms to an amorphous phase. The results are discussed using the free energy diagram for xerogels proposed by R. Roy (J. Amer. Cer. Soc., 52, 344, 1969; 67, 468, 1984).     

Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

Plasma-assisted atomic layer deposition (PA-ALD) is more suitable than thermal atomic layer deposition (ALD) for mass production because of its faster growth rate. However, controlling surface damage caused by plasma during the PA-ALD process is a key issue. In this study, the passivation characteristics of Al₂O₃ layers deposited by PA-ALD were investigated with various O₂ plasma exposure times. The growth per cycle (GPC) during Al₂O₃ deposition was saturated at approximately 1.4?Å/cycle after an O₂ plasma exposure time of 1.5?s, and a refractive index of Al₂O₃ in the range of 1.65–1.67 was obtained. As the O₂ plasma exposure time increased in the Al₂O₃ deposition process, the passivation properties tended to deteriorate, and as the radio frequency (RF) power increased, the passivation uniformity and the thermal stability of the Al₂O₃ layer deteriorated. To study the Al₂O₃/Si interface characteristics, the capacitance-voltage (C-V) and the conductance-voltage (G-V) were measured using a mercury probe, and the fixed charge density (Q_f) and the interface trap density (D_it) were then extracted. The Q_f of the Al₂O₃ layer deposited on a Si wafer by PA-ALD was almost unaffected, but the D_it increased with O₂ plasma exposure time. In conclusion, as the O₂ plasma exposure time increased during Al₂O₃ layer deposition by PA-ALD, the Al₂O₃/Si interface characteristics deteriorated because of plasma surface damage.     

The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

This paper discusses the effect of N 2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3 /AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor(MISHEMT),with Al2O3 deposited by atomic layer deposition.The results indicated that the gate leakage was decreased two orders of magnitude after the Al2O3 /AlGaN interface was pretreated by N 2 plasma.Furthermore,effects of N 2 plasma pretreatment on the electrical properties of the AlGaN/Al2O3 interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al2O3 and AlGaN film was improved.     

Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching

Etching of amorphous Al₂O₃ and polycrystalline Y₂O₃ films has been investigated using an inductively coupled reactive ion etch system. The etch behaviour has been studied by applying various common process gases and combinations of these gases, including CF₄/O₂, BCl₃, BCl₃/HBr, Cl₂, Cl₂/Ar and Ar. The observed etch rates of Al₂O₃ films were much higher than Y₂O₃ for all process gases except for Ar, indicating a much stronger chemical etching component for the Al₂O₃ layers. Based on analysis of the film etch rates and an investigation of the selectivity and patterning feasibility of possible mask materials, optimized optical channel-waveguide structures were fabricated in both materials. In Al₂O₃, channel waveguides were fabricated with BCl₃/HBr plasma and using a standard resist mask, while in Y₂O₃, channel waveguides were fabricated with Ar and using either a resist or a sputter deposited Al₂O₃ mask layer. The etched structures in both materials exhibit straight sidewalls with minimal roughness and sufficient etch depths (up to 530 nm for Al₂O₃ and 250 nm for Y₂O₃) for defining waveguides with strong optical confinement. Using the developed etch processes, low additional optical propagation losses (on the order of 0.1 dB/cm) were demonstrated in single-mode ridge waveguides in both Al₂O₃ and Y₂O₃ layers at 1550 nm. PACS 42.70.-a; 42.82.-m; 42.82.Cr     

Stacked and nanolaminated Al2O3/TiO2 for surface passivation and encapsulation of silicon

Silicon solar cells passivated with Al₂O₃ require a capping layer that protects the passivation layer from humidity because of sensitivity of Al₂O₃ to moisture. Al₂O₃/TiO₂ stacks obtained by atomic layer deposition have been known to provide a high level of passivation layers because of their excellent field‐effect passivation. In this work, degradation of this Al₂O₃/TiO₂ stack, when exposed to humidity, is examined, and an attempt is made for a humidity‐resistant encapsulation layer by adding Al₂O₃/TiO₂ nanolaminates that can be deposited in‐situ without breaking vacuum. Placing the nanolaminate on top of the TiO₂ and Al₂O₃ stack is found to lead to almost no degradation even after 10 days of humidity exposure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoparticles

This article describes the ultraviolet (UV) protection of MgO and Al₂O₃ nanoparticles embedded electrospun polyacrylonitrile (PAN) nanofibrous mats. UV radiation is a harmful part of sunlight and prolonged exposure to it can cause serious skin damages. In this research, nanofibrous mats consisting of nanofibers with different diameters containing different amounts of MgO, Al₂O₃, MgO Plus, and Al₂O₃ Plus nanoparticles were produced, and their UV-protection was measured. The specific surface area of MgO, MgO Plus, Al₂O₃, and Al₂O₃ Plus nanoparticles was 230, 600, 275, and 550 m²/g, respectively. The mean diameter of electrospun PAN nanofibers embedded with metal oxide nanoparticles was in the range of 665–337 nm. The results showed that the UV-protection (shielding) capability of the mats strongly depends on fiber diameter; in fact a thin mat of nanofibers has a much stronger UV-protection in comparison to a thicker mat composed of regular fibers. UV transmission is reduced as a result of embedding MgO and Al₂O₃ nanoparticles in the electrospun PAN nanofibrous mats. MgO Plus and Al₂O₃ Plus show higher UV-protection than MgO and Al₂O₃.     

Al2O3Hx(x=1—3)分子团簇的结构与光谱研究

用密度泛函理论(DFT)的B3lyp方法在6-311++g(d,p)水平上对Al₂O₃H_x(x=1—3)分子的几何构型, 电子结构, 振动频率等性质进行了系统研究. 并给出了它们可能基态结构的总能量(E_T), 零点能(E_z), 摩尔热容(C_v), 标准熵(S), 原子化能(ΔE_m), 垂直电离能(IP)及垂直电子亲和能(E_A). Al₂O₃H和Al₂O₃H₂分子可能的基态的几何构型都为平面结构. Al₂O₃H₃的两个可能为基态的几何构型都是在立体Al₂O₃(D_3h)的几何结构基础上加三个氢原子构成. 这三个分子的能量最低结构为Al₂O₃H(²A′)C_s, Al₂O₃H₂(¹A′) C_s, Al₂O₃H₃ (²A) C₁.     

Effective silicon surface passivation by atomic layer deposited Al2O3/TiO2 stacks

In this work atomic layer deposition of Al₂O₃ and TiO₂ has been used to obtain dielectric stacks for passivation of silicon surfaces. Our experiments on n‐ and p‐type silicon wafers deposited by thin Al₂O₃/TiO₂ stacks show that a considerably improved passivation is obtained compared to the Al₂O₃ single layer. For Al₂O₃ films thinner than 20 nm the emitter saturation current density decreases with increasing TiO₂ thickness. Especially the passivation of ultrathin (～5 nm) Al₂O₃ is very effectively enhanced by TiO₂ due to a decreased interface defect density as well as an increased fixed negative charge in the stacks. Hence, the thin Al₂O₃/TiO₂ stacks developed in this work can be used as a passivation coating for Si‐based solar cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Physical studies on composites Ag7I4VO4-Al2O3

The electrical properties of the solid electrolytes Ag₇I₄VO₄-Al₂O₃ (0-40 mol% Al₂O₃) are investigated. The electrical conductivity, dielectric constant and dielectric loss are increased by increasing the concentration of Al₂O₃; showing a maximum at 30 mol% Al₂O₃. The conductivity is found to be increased by decreasing the particle size of Al₂O₃. The results are explained using the random resistor network model (RRN). This is due to the formation of a highly conducting interface layer along the matrix-particle interface. This layer is destroyed at concentrations higher than 30 mol% Al₂O₃.     

Fabrication of one-dimensional photonic crystals with Al2O3/TiO2 by pulsed laser deposition

One-dimensional photonic crystal (1D PC) mirrors consisting of Al₂O₃/TiO₂ stacks are theoretically and experimentally investigated at visible frequencies. In our experiments the refractive index of Al₂O₃ is tunable from 1.43 to 1.68. We found that the Al₂O₃/TiO₂ combination can be adopted to fabricate both broad- and narrow-band 1D PC mirrors: Substituting nanoporous Al₂O₃ for dense SiO₂ in an SiO₂/TiO₂ broad-band mirror yields the same spectral properties, while using dense Al₂O₃ in the combination can reduce the band-gap width to as low as 30 nm. The experimentally measured reflection and transmission spectra agree with the numerical results obtained by the transfer matrix method.     

Surface sensitive spectroscopic study of the interaction of oxygen with Al(111) - low temperature chemisorption and oxidation

The interaction of an atomically clean Al(111) surface with O₂ has been studied using a combination of electron energy loss spectroscopy (EELS) and Auger spectroscopy (AES). Oxygen dissociatively adsorbs and occupies both surface and subsurface binding sites under all exposure conditions in the temperature range 122–700 K. Surface sites are preferentially occupied at low exposures, while higher exposures increasingly favor population of subsurface sites. Studies of O₂ adsorption at temperatures as low as 131 K have shown that formation of Al₂O₃ occurs at high oxygen exposures. The Al₂O₃ produced exhibits a 54 eV Auger transition and a characteristic vibrational spectrum with loss features at 430, 645, and 880 cm⁻¹. Argon ion bombardment of thin monolayer level Al₂O₃ layers leads to preferential loss of Al₂O₃ and a reduction in the subsurface-to-surface oxygen ratio. Electron bombardment of similar, thin Al₂O₃ layers is ineffective in inducing desorption of surface species, whereas thick Al₂O₃ layers are strongly influenced by electron bombardment, as judged from AES behavior. Qualitative models for O₂ adsorption, oxidative annealing, and damage by ion and electron bombardment are given.     

Pt–Al2O3 nanocoatings for high temperature concentrated solar thermal power applications

Nano-phased structures based on metal–dielectric composites, also called cermets (ceramic–metal), are considered among the most effective spectral selective solar absorbers. For high temperature applications (stable up to 650 °C) noble metal nanoparticles and refractory oxide host matrices are ideal as per their high temperature chemical inertness and stability: Pt/Al₂O₃ cermet nano-composites are a representative family. This contribution reports on the optical properties of Pt/Al₂O₃ cermet nano-composites deposited in a multilayered tandem structure. The radio-frequency sputtering optimized Pt/Al₂O₃ solar absorbers consist of stainless steel substrate/ Mo coating layer/ Pt–Al₂O₃/ protective Al₂O₃ layer and stainless steel substrate/ Mo coating layer /Pt–Al₂O₃ for different composition and thickness of the Pt–Al₂O₃ cermet coatings. The microstructure, morphology, theoretical modeling and optical properties of the coatings were analyzed by the x-ray diffraction, atomic force, microscopy, effective medium approximation and UV–vis specular and diffuse reflectance.