共查询到19条相似文献,搜索用时 109 毫秒
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采用湿法腐蚀对不同电阻率的4H-SiC衬底进行腐蚀。观察发现,对于同一类型缺陷,低电阻率衬底的缺陷腐蚀坑尺寸比高电阻率衬底的小1~2倍,证明氮元素掺杂的低电阻率SiC衬底的腐蚀速率更低。通过显微镜观察腐蚀后的衬底,对六边形的螺位错(TSD)、近圆形的刃位错(TED)和贝壳形的基平面位错(BPD)腐蚀坑进行了分析。对比了TSD与微管腐蚀坑形貌的区别,虽然两种缺陷腐蚀坑都具有六边形形貌,但微管腐蚀坑尺寸比TSD腐蚀坑大1.4倍左右。通过对位错密度的统计,发现目前4H-SiC衬底中主要的位错为TED和BPD,而TSD密度相对较低,仅为420 cm-2。 相似文献
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利用化学腐蚀法对直径150mm LEC SI-GaAs单晶片进行腐蚀,并用金相显微镜对腐蚀后的样品进行检测.在样品中发现了不同形貌的位错和微缺陷,其中球形微缺陷和胞状位错尤为常见.本文对样品中缺陷的类型、密度和分布等情况进行了描述和讨论. 相似文献
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通过电化学工作站对4英寸(1英寸=2.54 cm)n型单晶SiC(4H-SiC)进行电化学腐蚀特性研究,采用36GPAW-TD单面抛光机对其Si面和C面进行了化学机械抛光(CMP)。结果表明,采用H2O2和NaClO作为氧化剂,均可促进SiC的电化学腐蚀并提高其抛光去除速率,其促进作用与氧化剂浓度和抛光液的pH值密切相关。选择含体积分数5%的H2O2、pH值为12的SiO2抛光液对SiC进行CMP,得到的Si面抛光速率可以达到285.7 nm/h。在含H2O2抛光液中引入适量的NaNO3和十二烷基硫酸钠,SiC表现出较高的腐蚀电位绝对值和去除速率。在H2O2和NaClO抛光液体系中,SiC的去除速率与其腐蚀电位的绝对值正相关,该结果对实际应用有一定的借鉴意义。 相似文献
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塑性弯曲蓝宝石单晶光纤的光学特性研究 总被引:1,自引:0,他引:1
为满足医用激光传能要求,使用CO2激光对直径分别为550um和750um的两组蓝宝石单晶光纤进行了塑性弯曲,平均弯曲半径为3.0mm,由单个弯曲引起的额外损耗在900nm处小于0.1dB,对脉冲Nd:YAG激光能量传输的损伤阈值高于30MW/cm^2。实验结果表明,塑性弯曲蓝宝石光纤完全可满足医用激光传能的要求,并可减小输出端弯曲光纤头的体积,增大光纤激光传输应用系统的灵活性。 相似文献
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β-Ga2O3单晶作为高压大功率器件的衬底,其位错密度直接影响器件的漏电特性,位错腐蚀坑显露面与外延生长密切相关。β-Ga2O3单晶属于单斜晶系,对称性低,研究不同晶面位错腐蚀坑的形状与显露面难度较高。对采用导模(EFG)法生长的(001)、■和(010)面β-Ga2O3晶片进行腐蚀,采用扫描电子显微镜(SEM)观测腐蚀坑形貌,采用共聚焦激光扫描显微镜对显露面与表面晶面之间的夹角进行表征,根据测试结果可推算出腐蚀坑显露面晶面指数,为衬底和外延生长提供重要的参考依据。 相似文献
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使用MOCVD外延系统,采用3D-2D生长模式在圆锥图形蓝宝石衬底上生长GaN薄膜。研究发现3D-2D生长模式能够有效的减少GaN薄膜的穿透性位错,其中3D GaN层的生长条件是关键:低V/III比,低温和高生长压力。为了进一步减少TD,3D GaN层的厚度应该与图形衬底上的图形高度接近。当3D GaN层生长结束时,3D GaN层把图形衬底的图形围在其中,具有倾斜的侧壁和(0001)向的上表面,而图形上基本没有沉积物。在接下来的2D生长过程里,GaN沿倾斜侧面快速生长,使得侧面上的穿透性位错产生弯曲,从而减少GaN薄膜的穿透性位错。经过对3D条件的优化,GaN薄膜的穿透性位错降低到1×108cm-2,XRD测试得到的(002),(102)半宽分别达到211弧秒和219弧秒。 相似文献
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锥形图形衬底上氮化镓薄膜生长和表征 总被引:1,自引:1,他引:0
Jing Liang Xiao Hongling Wang Xiaoliang Wang Cuimei Deng Qingwen Li Zhidong Ding Jieqin Wang Zhanguo Hou Xun 《半导体学报》2013,34(11):113002-5
GaN films are grown on cone-shaped patterned sapphire substrates(CPSSs)by metal-organic chemical vapor deposition,and the influence of the temperature during the middle stage of GaN growth on the threading dislocation(TD)density of GaN is investigated.High-resolution X-ray diffraction(XRD)and cathodeluminescence(CL)wereusedtocharacterizetheGaNfilms.TheXRDresultsshowedthattheedge-typedislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates(CSSs).Furthermore,whenthegrowthtemperatureinthemiddlestageofGaNgrownonCPSSdecreases,the full width at half maximum of the asymmetry(102)plane of GaN is reduced.This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs.The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS,and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases. 相似文献
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Chen Xiaofeng Chen Nuofu Wu Jinliang Zhang Xiulan Chai Chunlin Yu Yude 《半导体学报》2009,30(8):083006-083006-5
uring crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. 相似文献
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A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. 相似文献
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为了从蓝宝石晶体高温传感器输出信号中精确解调出温度信息,建立了一套基于离散腔长变换(DGT)的解调系统。从白光偏振干涉原理出发,分析了高斯光源条件下利用DGT解调蓝宝石晶体高温传感器的原理。针对传统傅里叶变换解调数字频率非均匀采样存在误差的缺点,直接对波长均匀采样得到的光谱数据进行DGT,利用DGT幅值谱峰值解调环境温度引起的光程差(OPD)。进而采用加高斯窗法消除光谱仪背景噪声,进一步提高DGT方法的解调精度。在实际的解调系统中对所提出的方法进行了实验,结果表明,在600~1 200℃测温范围,本文方法可以实现温度的精确测量。 相似文献
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实验研究了调QNd:YAG激光器泵浦的增益开关型掺钛蓝宝石激光器的时间特性,泵浦能量水平(泵浦能量/阈值能量)变化范围为2.1~3.8,腔长变化范围为20cm~60cm,并改变了腔的损耗。根据增益开关激光器时间特性的理论,激光脉冲的建立时间和其脉冲宽度取决于泵浦能量水平和腔长,并与腔损耗成反比,而与泵浦脉宽和波形无关,实验结果与理论分析相符。当用10ns脉宽的激光脉冲泵浦时,在20cm短腔长情况下获得了比泵浦光脉宽窄的仅4ns脉宽的激光脉冲。 相似文献
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A combination of optical microscopy and transmission electron microscopy has been used to provide direct evidence that pits
formed by the action of a solution of 3 HF:1 H2O2 on epitaxial and substrate GaP material close to the (001 ) orientation are associated with dislocations. The formation of
different pit shapes can be correlated with previous work on etch pits in GaP, namely the formation of D and S pits. Grooves
have been produced on certain crystallographic orientations which are associated with certain types of stacking faults. It
is now possible to use this etch for a direct count of the dislocation density in (001) GaP and to indicate the extent of
stacking faults. 相似文献