半导体量子器件物理讲座 第六讲 半导体量子阱激光器

量子阱结构是半导体光电子器件的核心组成部分,它是半导体光电子集成的重要基础,文章在描述了量子结构的态密度,量子尺寸效应,粒子数反转的基础上,介绍了量子阱导质结构激光器的工作原理,器件结构,器件性能,并对其在可见光激光器和大功率激光器件中显现出来的优越性作了进一步的说明。     

半导体量子电子和光电子器件

本文阐述了半导体异质结构电子的量子特性 ,如电子波输运、库仑阻塞效应等。介绍了几种新颖、典型的量子电子器件和量子光电子器件的物理模型和基本原理。这些器件包括了单电子晶体管、共振隧穿二极管、高电子迁移率晶体管、δ掺杂场效应晶体管、量子点元胞自动机、量子阱红外探测器、埋沟异质结半导体激光器、量子级联激光器等。给出了作者在半导体量子器件物理方面的最新研究结果。     

半导体量子电子和光电子器件

本阐述了半导体异质结构电子的量子特性,如电子波输运,库仑阻塞效应等,介绍了几种新颖,典型的量子电子器件和量子光电子器件的物理模型和基本原理,这些器件包括了单电子晶体管,共振隧穿二极管,高电子迁移率晶体管,δ掺杂场效应晶体管,量子点元胞自动机,量子阱红外探测器,埋沟异质结半导体激光器,量子级联激光器等,给出了作在半导体量子器件物理方面的最新研究结果。     

半导体光电二极管伏安特性的实验测定

论述了半导体光电二极管的结构、工作原理、基本性能及其伏安特性测定技术。     

半导体量子器件物理讲座 第一讲 异质结构和量子结构

随着半导体材料超薄层外延生长和微细加工技术的进展,人们已研制成功多种多样的半导体量子器件,以量子理论为基础,以半导体量子器件为研究对象,形成了一门新的学科－半导体量子电子学和量子光电子学,文章着重介绍半导体异质结构和量子结构,包括其能带结构、态密度分布等性质。     

基于石墨烯的半导体光电器件研究进展

石墨烯自从被发现以来,由于其零带隙、低电导率、常温下的高电子迁移率及量子霍尔效应和独特的光吸收等优良特性,引发了世界各国科研人员的重视,研究人员对其物理性质及应用的研究越来越多并且进展迅速．本文以光纤通信用光电器件中的探测器、调制器为主,综述了石墨烯在光电探测器、调制器以及超快锁模激光器和用于发光二级管、触摸屏透明导电薄膜等方面的应用．     

半导体量子点及其应用(Ⅰ)

量子点，又称“人造原子”，它是纳米科学与技术研究的重要组成部分，由于载流子在半导体量子点中受到三维限制而具有的优异性能，构成了量子器件和电路的基础，在未来的纳米电子学、光电子学，光子、量子计算和生命科学等方面有着重要的应用前景，受到人们广泛重视，文章分为Ⅰ、Ⅱ两个部分：第Ⅰ部分介绍了半导体量子点结构的制备和性质；第Ⅱ部分介绍了量子点器件的可能应用。     

太赫兹量子阱光电探测器光栅耦合的模拟与优化

光栅耦合是量子阱光电探测器探测正入射电磁辐射的常用耦合方法,本文采用模式展开法研究了一维金属光栅太赫兹量子阱光电探测器中的电磁场分布,并给出了器件有源区中的平均光强.研究结果表明,若一维光栅的周期与太赫兹波在器件材料中的波长相当,并且根据器件结构选取合理的光栅占空比,可使器件中的平均光场最强,光栅的光耦合效率最高,从而提高器件的响应率. 关键词： 太赫兹 量子阱光电探测器 光栅     

基于1.06μm波长的谐振腔型石墨烯光电探测器的信噪比分析

雪崩光电二极管由于具有高增益特性而广泛应用于激光测距机中,但由于在电流倍增过程中引入的高附加噪声,使激光测距机进一步提高信噪比遇到了瓶颈。石墨烯具有高电子迁移率、零带隙结构、独特光吸收系数等特性使其广泛应用于激光器、光调制器、透明电极以及超快光电探测器。该研究提出了一种高信噪比的谐振腔型石墨烯光电探测器的设计方法。以波长为1.06μm的激光为例,采用光学传输矩阵法和散射矩阵法,研究了光波在谐振腔传输和吸收层吸收的机理,建立了谐振腔型光电探测器的光吸收模型,通过优化,器件最终量子效率达到91.2%,响应度达到0.778A·W~(-1),半高全宽达到6nm;分析石墨烯在谐振腔中的位置对器件吸收率的影响,发现在满足谐振条件下,器件吸收率随石墨烯位置呈现周期性变化,腔长的改变不改变吸收率峰值,而是改变了吸收率峰值对应的石墨烯在谐振腔中的位置,当腔长是入射光半波长的n倍时,随着石墨烯位置变化,将出现2n个吸收率峰值,且关于谐振腔中心点对称分布;选择石墨烯距顶层反射镜0.402 8μm时,器件吸收率达到94%,相比单层石墨烯,吸收率提高了16dB;通过对比求解谐振腔型石墨烯光电探测器和雪崩光电二极管信噪比方程,得出谐振腔型石墨烯光电探测器信噪比可达到90.3,较雪崩光电二极管提高了10dB;理论分析表明,谐振腔型石墨烯光电探测器具有高吸收率、高量子效率和高信噪比,研究成果将对激光测距机接收系统中光电探测器的更新设计和应用提供理论参考。     

支撑光网络发展的硅基光电子技术研究

作为大规模集成电路和化合物半导体光电子器件的制造技术共同构成的一门高新技术 ,硅基光电子技术越来越受到重视 .文章着重介绍中国科学院半导体研究所外延生长SiGe/Si量子结构和Si基器件研究的结果 :采用自行设计的UHV/CVD系统 ,成功地生长出Ⅱ型SiGe/Si量子阱和量子点 ,直到 2 5 0K仍能观察到自组织生长Ge/Si(0 0 1 )量子点的发光峰 ;研制成功SiGe/Si谐振腔增强型光电二极管 (RCEPD)、Y分支MZI光调制器和多模干涉 -马赫 -曾德干涉型光开关等Si基光电子器件 ;1 .3μm处RCEPD的量子效率达到 4 .2 % ,- 5V偏压下暗电流密度 1 2 pA/ μm2 ;2× 2热光型光开关的响应时间小于 2 0 μs,两输出端关态串扰为 - 2 2dB ,通态串扰为 - 1 2dB .     

Optoelectronic integration based on GaAs material

Optoelectronic integrated circuits (OEICs) in which both optoelectronic and electronic devices are monolithically integrated can exhibit various advantages in improving performance, functionality and reliability. This review concerns the development of OEICs based on GaAs systems. The requirements of integration include the development of devices having high performance and structures suitable for integration, and fabrication techniques for planar, process-compatible integrated structures. Superior devices such as low-threshold-current quantum-well (QW) lasers, planar-structure metal-semiconductor-metal (MSM) photodiodes and the planar integration process have been developed, and these have been used to fabricate multichannel transmit- and receive-OEICs operating at gigabit rates. The applications of such OEICs have been demonstrated in high-speed optical links and 4×4 optical switches. The technological areas expected to be developed further are discussed in view of the future widespread applications of OEICs to communication and signal-processing systems.     

高速光探测器封装的优化设计

提出了一种高速光探测器封装优化设计的新方法。首先用矢量网络分析仪对封装寄生参量和探测器芯片进行准确测量,研究了探测芯片的本征参量与封装寄生参量之间的谐振现象,然后合理利用这种谐振效应对芯片的频率响应特性进行有效补偿。理论分析和实验结果都证明优化封装后器件的频率响应带宽超过了芯片的响应带宽。该方法不需要另加其它元件．而仅仅利用光电器件封装过程中必不可少的金丝所带来的寄生电感,就达到了改善器件频率响应特性的目的。     

The rise of two-dimensional tellurium for next-generation electronics and optoelectronics

Single-element two-dimensional (2D) tellurium (Te) which possesses an unusual quasi-one-dimensional atomic chain structure is a new member in 2D materials family. 2D Te possesses high carrier mobility, wide tunable bandgap, strong light-matter interaction, better environmental stability, and strong anisotropy, making Te exhibit tremendous application potential in next-generation electronic and optoelectronic devices. However, as an emerging 2D material, the research on fundamental property and device application of Te is still in its infancy. Hence, this review summarizes the most recent research progresses about the new star 2D Te and discusses its future development direction. Firstly, the structural features, basic physical properties, and various preparation methods of 2D Te are systemically introduced. Then, we emphatically summarize the booming development of 2D Te-based electronic and optoelectronic devices including field effect transistors, photodetectors and van der Waals heterostructure photodiodes. Finally, the future challenges, opportunities, and development directions of 2D Te-based electronic and optoelectronic devices are prospected.     

第一讲光电子器件在光纤通信中的应用

光纤通信技术发展的阶段性飞跃总是伴随新型光电材料和功能器件的突破．文章介绍了光纤通信系统中应用到的各种光电子器件，从光纤通信的3个环节：光发送、光接受、光放大为出发点，着重阐述了半导体激光器、光调制器、光检测器、光放大器等关键器件的基本原理、工作特性以及发展现状和趋势，并在回顾传统集成光电子器件发展的同时，展望了以新一代微纳结构光电子器件为基础的光子集成技术的发展趋势。     

Low crosstalk monolithic wavelength demultiplexing switch arrays

Wavelength Division Multiplexing (WDM) is a key enabling technology for increasing the transmission capacity of optical fiber communication systems. Recently, a new family of optoelectronic devices, including detectors, switches, and emitters, that is based on resonant cavity enhancement, has emerged. Wavelength selective optoelectronic switching is achieved by placing a photothyristor in an asymmetric Fabry-Perot cavity, which provides a highly selective response at a wavelength determined during device fabrication. These WDM optoelectronic devices haue promising applications in optical COmmunications and optical logic circuits. Results on a N-p-n-p optoelectronic switch with a ten wavelength channel capability are presented.     

Microwave and millimeter-wave losses in conventional optoelectronic devices

In this paper, microwave characteristics of conventional optoelectronic devices, with emphasis on devices with microstrip (MS) and coplanar waveguide (CPW) electrode structures, are obtained. This analysis is essential for any improvement in the structure of the conventional optoelectronic devices so as to obtain a high performance. Microwave loss is one of the important bandwidth limitation factors in microwave and millimeter-wave (mmW) optical devices. Different sources of loss including ohmic, dielectric and radiating loss in MS and CPW of conventional optical devices are analyzed and compared. The results show that the total microwave loss increases with frequency in conventional MS and CPW waveguides. Also, in traveling-wave optoelectronic devices, the bandwidth is limited in the optical part by effects such as the carrier transit time effect and in the microwave part by factors such as length of the devices in active and non-active sections. In addition, validation of the results in the paper is performed with published theoretical and/or measurement results.     

DNA-类脂复合物光电薄膜材料及其应用

回顾了近年来DNA-类脂复合物光电薄膜材料及其相关应用研究的进展,介绍了DNA的提取与DNA-类脂复合物薄膜的制备方法,DNA-类脂复合物的光学特性,以及DNA-类脂复合物在光电子器件中的应用,并指出了DNA-类脂复合物光电薄膜材料在光学和光电子器件中的应用前景。     

WSe2/GeS 异质结的增强光致发光

二维半导体材料为纳米尺度的光学性质研究提供了良好的支持. 当将其构筑成异质结时, 界面间的相互作用可以改变原光电性质或产生新的性质, 是二维材料光电子器件功能控制的重要手段. 利用机械剥离法制备WSe2/GeS 异质结, 通过发光光谱研究异质结层间激子的光学性质. 结果表明:p 型 GeS 与弱 n 型 WSe2 构筑成异质结时会产生新的层间激子. 与 GeS 和 WSe2 的荧光发射强度相比, 异质结的层间激子发光强度显著增加. 此研究为设计具有先进光电性能的二维半导体器件提供了思路.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

Two-dimensional optoelectronic devices for future optical switching and information processing

Recent progress is reviewed in surface-normal optoelectronic devices primarily for use in optical switching and information processing. A type of optoelectronic integrated circuit (OEIC), the surface-normal two-dimensional array, is fabricated using these devices. This improves on first-generation OEICs by featuring large-scale integration in a small area, which results in a higher production yield. It also has structures which can easily be integrated with electronic circuits and can meet multichannel requirements. This approach supports optoelectronic progress towards optical information processing.