LD泵浦Nd∶YVO_4晶体GaAs被动调Q激光理论和实验研究

考虑LD泵浦光强和腔内振荡光强的空间高斯分布以及晶体热效应的影响,给出了$山东大学信息科学与工程学院!山东济南250100晶体GaAs被动调Q 1. 06μm激光的耦合速率方程组,数值求解该方程组获得了输出激光的平均输出功率、脉冲宽度、重复率随泵浦功率的变化特性,所得理论值与实验结果相符.     

LD泵浦Nd:GdVO4晶体Cr4+:YAG被动调Q激光特性研究

考虑腔内光子数密度的空间高斯分布以及晶体热效应的影响,给出了LD泵浦Nd:GdVO₄ 晶体Cr⁴⁺:YAG被动调Q 1.06 μm激光的耦合速率方程组.数值求解该方程组获得了输出激光的脉冲宽度、重复率、峰值功率以及单脉冲能量随泵浦功率的变化特性,其理论值与实验结果相符.     

LD泵浦Nd∶YVO4晶体GaAs被动调Q激光理论和实验研究

考虑LD泵浦光强和腔内振荡光强的空间高斯分布以及晶体热效应的影响，给出了Nd∶YVO₄晶体GaAs被动调Q1.06 μm激光的耦合速率方程组，数值求解该方程组获得了输出激光的平均输出功率、脉冲宽度、重复率随泵浦功率的变化特性，所得理论值与实验结果相符.     

LD泵浦Cr∶YAG被动调Q 556nm黄光激光器

通过对谐振腔镜镀制合理的激光薄膜，成功实现了LD泵浦Nd∶YAG 1.111 μm激光谱线的运转.利用LBO腔内倍频Nd∶YAG/Cr∶YAG结构获得了高重复频率被动调Q556 nm全固态黄光激光器，在注入泵浦功率为1.6 W时，得到平均功率51 mW，脉冲宽度48 ns,重复频率8.9 kHz,峰值功率高达119 W的脉冲黄光输出.     

LD泵浦Cr∶YAG被动调Q556nm黄光激光器

通过对谐振腔镜镀制合理的激光薄膜,成功实现了LD泵浦Nd∶YAG1.112μm激光谱线的运转.利用LBO腔内倍频Nd∶YAG/Cr∶YAG结构获得了高重复频率被动调Q556nm全固态黄光激光器,在注入泵浦功率为1.6W时,得到平均功率51mW,脉冲宽度48ns,重复频率8.9kHz,峰值功率高达119W的脉冲黄光输出.     

LD泵浦Nd∶LuVO4/Cr4+∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体，利用Cr4+∶YAG晶体作为可饱和吸收元件，实现了1.06 μm激光的被动调Q运转.在泵浦功率为19.1 W时，获得最高平均输出功率为4.58 W，脉冲宽度为84 ns，单脉冲能量为36.6 μJ以及峰值功率为436.2 W的激光脉冲.     

LD泵浦Nd∶GdVO4/GaAs被动调Q激光器研究

报道了采用大功率半导体激光器端面泵浦Nd∶GdVO4晶体,利用GaAs晶片兼作饱和吸收被动调Q元件和输出耦合镜,实现了1.06 μm激光的被动调Q运转.在泵浦功率为13.9 W时,获得最高平均输出功率为3.6 W,脉冲宽度为252 ns,单脉冲能量为27 μJ以及峰值功率为107 W的激光脉冲.     

LD泵浦Cr4+∶YAG被动调Q锁模Nd∶Gd0.42Y0.58VO4激光器

理论和实验研究了LD泵浦Nd∶Gd0.42Y0.58VO4/Cr4+∶YAG被动调Q锁模激光器.在分析Cr4+∶YAG晶体能级结构和调Q锁模物理过程的基础上,通过数值模拟给出了Cr4+∶YAG调Q锁模的参量要求,然后进行了实验验证.实验中Cr4+∶YAG的初始透过率T0分别为86.3%、95%,输出镜的透过率T分别为10%、20%,在其他条件不变的情况下构成四种不同的组合,均实现了激光器的调Q锁模运转.实验结果表明,降低Cr4+∶YAG的初始透过率T0或提高输出镜透过率T有利于获得较好的锁模效果,与理论分析一致.     

LD泵浦Nd:GdVO4晶体1.34 μm被动调Q的研究

由于Co:LMA晶体具有良好的热机械性能、高化学稳定性和较大的基态吸收截面积,因此以Co:LMA作为饱和吸收体可实现对1.3～1.6 μm波段的激光进行被动调Q. 以Co:LMA饱和吸收体作为Q开关,研究了高功率激光二极管泵浦的c切Nd:GdVO4固体激光器1.34 μm的被动调Q. 在泵浦功率为11.5 W和优化的输出镜透过率为T=5.5%时,获得了3.01 W的静态输出功率. 利用初始透过率为T0=90%的Co:LMA晶体作为调Q器件的动态运转,可以得到的最短输出脉冲宽度、最高输出功率、最高脉冲重复率和最高峰值功率分别是32 ns,266 mW,277 kHz和187 W.     

新型Nd3+∶Ca4GdO(BO3)3自倍频晶体Cr4+∶YAG被动调Q激光特性研究

采用氙灯抽运自倍频晶体Nd3 +∶Ca4GdO(BO3 ) 3 (简称Nd∶GdCOB) ,Cr4+∶YAG被动调Q ,实现了Nd∶GdCOB晶体被动调Q激光运转 ,测量了饱和吸收体Cr4+∶YAG不同小信号透过率下绿激光单脉冲的输出能量、脉冲宽度、重复率 ,给出了描述Nd∶GdCOB晶体调Q工作原理的耦合波方程组 ,数值求解了该方程组 ,所得的理论结果与实验值相符合     

Laser-diode-pumped Passively Q-switched Nd:Sr5(VO4)3F Laser with Cr4+: YAG Saturable Absorber

Cr4+:YAG is a new saturable absorber for passive Q-switching. As a passive Q-switcher, it has several excellent properties, such as low saturation fluence, high damage threshold, good thermal conductivity, no degradation and so on. By using a laser-diode as pumping source and Cr4+ :YAG as passive Q switcher, the passive Q-switching run in Nd: Sr5(VO4)3F laser at 1. 065 μm is realized. The average output power, the single pulse energy, the pulse width and the repetition rate for different small-signal transmission of Cr4+:YAG and different pumping power were measured. Meanwhile, the coupling rate equations for Cr4+:YAG as passive Q-switcher were given and the experimental results agreed with the numerical solution of equations.     

Passively Q-switched a-cut Nd:GdVO4 self-Raman laser with Cr:YAG

A passively Q-switched a-cut Nd:GdVO₄ self-Raman solid-state laser with Cr:YAG saturable absorber was firstly demonstrated. The first Stokes at 1173 nm was successfully obtained. At the maximum incident pump power, the pulse width was about 1.8 ns and the repetition rate was 27.5 kHz. 586.5 nm yellow laser output was also realized by use of an LBO frequency doubling crystal.     

脉冲LDA泵浦Nd∶YVO4/GaAs被动调Q锁模激光器

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As＋注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60％的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95％以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.     

High-Power Passively Q-Switched Nd:YAG Laser at 1112 nm with a Cr~(4+):YAG Saturable Absorber

A high-power passively Q-switched Nd:YAG laser operating at 1112 nm with Cr~(4+):YAG as a saturable absorber is demonstrated.Under 808 nm diode-direct pumping,the maximum average output power of 2.73 W is achieved at the pump power of 16.65 W,corresponding to an optical-to-optical conversion efficiency of 16.4%.At the same time,the pulse width,pulse repetition rate,single pulse energy and peak power are 27.2ns,9kHz,303.3μJ and11.2kW,respectively.As far as we know,the result gives the highest average output power at 1112 nm generated by an 808 nm diode-end-pumped Nd:YAG laser.     

Laser-diode-pumped Passively Q-switched Nd:Sr5(VO4)3F Laser with Cr4+:YAG Saturable Absorber

Cr4+:YAG is a new saturable absorber for passive Q-switching. As a passive Q-switcher, it has several excellent properties, such as low saturation fluence, high damage threshold, good thermal conductivity, no degradation and so on. By using a laser-diode as pumping source and Cr4+ :YAG as passive Q switcher, the passive Q-switching run in Nd: Sr5(VO4)3F laser at 1. 065 μm is realized. The average output power, the single pulse energy, the pulse width and the repetition rate for different small-signal transmission of Cr4+:YAG and different pumping power were measured. Meanwhile, the coupling rate equations for Cr4+:YAG as passive Q-switcher were given and the experimental results agreed with the numerical solution of equations.