Effect of quantizing magnetic field on the spectrum and damping of polaritons in double two-dimensional electronic systems

Nonradiative (surface and bulk) polaritons in a semiconductor structure composed of two heterojunctions GaAs/Al_xGa_1?x As are investigated under the integer quantum Hall effect (IQHE) conditions. The dispersive, polarization, and energy characteristics of these polaritons are determined including energy dissipation in the two-dimensional electron semiconductor layers. The phase and group velocities of surface and bulk polaritons are shown to be quantized under the IQHE conditions. It is found that resonance coupling of two surface polariton modes may occur in double GaAs/Al_xGa_1?x As heterojunctions. Possible experimental observation of nonradiative polaritons is discussed.     

Resonant and surface polaritons in quantum wells

Summary We show how the breaking of the translational invariance in a quantum well modifies the concept of polariton with respect to that defined for bulk material. Polaritons in quantum wells result from the combination of the exciton states with the radiation field. They are here obtained as the solutions of Maxwell equations with retardation, provided an appropriate nonlocal response function is used for the electric susceptibility, and Maxwell boundary conditions are imposed. We find two types of polaritons depending on the values of the in-plane wavevectork _II: those atk _II<ω/v (wherev=c/n is the velocity of light in the sample) are resonant with the radiation field in the barrier and those atk _II>ω/v cannot be coupled to waves in the barrier. In both cases explicit expressions are given for radiative shifts and radiative broadenings as functions ofk _II. Numerical results are obtained for GaAs-Ga_1−x Al _x As and for CuCl quantum wells and new experiments are suggested. The existence of resonant and surface polaritons justifies an interpretation of the temperature dependence of the radiative lifetime suggested by the same authors. It also decreases the radiative efficiency in the direction perpendicular to the planes and increases the radiative efficiency parallel to the planes with increasing temperature. Due to the relevance of its scientific content, this paper has been given priority by the Journal Direction.     

Observation of a correlation between the dependences of the radiative decay time and intensity of the impurity core-valence luminescence on excitation energy in K1−x CsxCl and Rb1−x CsxCl mixed crystals

A study of the spectral and kinetic parameters of impurity core-valence luminescence (CVL) excited by synchrotron radiation in K_1−x Cs_xCl and Rb_1−x Cs_xCl mixed crystals is reported. The dependences of the intensity and radiative decay time τ of impurity CVL on exciting photon energy hν have been found to be correlated. It is concluded that the observed τ = f(hv) relation originates from nonradiative decay of core excitations near the surface, which govern also the excitation spectral features in this spectral region. Fiz. Tverd. Tela (St. Petersburg) 41, 1973–1975 (November 1999)     

Surface plasmon-phonon polaritons of hexagonal zinc oxide

The anisotropy of surface plasmon-phonon polaritons of the first and second types in hexagonal zinc oxide is investigated at various electron concentrations and orientations of the C axis of the crystal relative to its surface. It is shown that surface plasmon-phonon polaritons of a third type are generated when the electron concentration in ZnO is greater than 2×10¹⁸ cm⁻³ and the orientation corresponds to K⊥C and xy⊥C. The spectrum of the surface plasmon-phonon polaritons of the third type are calculated, and the conditions for the existence of surface plasmon-phonon polaritons of the third type in ZnO single crystals are determined. Zh. Tekh. Fiz. 68, 58–62 (January 1998)     

Kinetics of indirect photoluminescence in GaAs/AlxGa1−x As double quantum wells in a random potential with a large amplitude

The kinetics of indirect photoluminescence of GaAs/Al_xGa_1−x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is comparable to the binding energy of an indirect exciton) in magnetic fields B≤12 T at low temperatures T≥1.3 K is investigated. It is found that the indirect-recombination time increases with the magnetic field and decreases with increasing temperature. It is shown that the kinetics of indirect photoluminescence corresponds to single-exciton recombination in the presence of a random potential in the plane of the double quantum wells. The variation of the nonradiative recombination time is discussed in terms of the variation of the transport of indirect excitons to nonradiative recombination centers, and the variation of the radiative recombination time is discussed in terms of the variation of the population of optically active excitonic states and the localization radius of indirect excitons. The photoluminescence kinetics of indirect excitons, which is observed in the studied GaAs/Al_xGa_1−x As double quantum wells for which the random potential has a large amplitude, is qualitatively different from the photoluminescence kinetics of indirect excitons in AlAs/GaAs wells and GaAs/Al_xGa_1−x As double quantum wells with a random potential having a small amplitude. The temporal evolution of the photoluminescence spectra in the direct and indirect regimes is studied. It is shown that the evolution of the photoluminescence spectra corresponds to excitonic recombination in a random potential. Zh. éksp. Teor. Fiz. 115, 1890–1905 (May 1999)     

Spontaneous photorefractive effect in Sr1−x CaxTiO3 (x=0.014)

The temperature dependence of the principal values of the refractive index in Sr_1−x Ca_xTiO₃ (x=0.014) has been measured in the 17–275 K range under various conditions of sample illumination with 1.96 eV photons. The spontaneous photorefractive contribution δn ^ph to the temperature-induced variation of the refractive index of Sr_1−x Ca_xTiO₃, which appears after illumination of the sample in the ferrophase (transition temperature T _c=32 K) and persists in the paraphase under heating up to 150 K, has been separated. The photoinduced polarization has been estimated. Fiz. Tverd. Tela (St. Petersburg) 39, 711–713 (April 1997)     

Enhanced backscattering in a magnetic field

Abstract

By means of numerical simulations the authors study the scattering of a beam of p-polarized light from a small RMS slope one-dimensional random surface on a semi-infinite metal or n-type semiconductor to which a constant magnetic field is applied. The surface is defined by the equation x ₃=ξ(x ₁), where the surface profile function ξ(x ₁) is a stationary stochastic Gaussian process. The plane of incidence is the x ₁ x ₃ plane, and the magnetic field is directed along the x ₂-axis. In the presence of the magnetic field the dispersion curve for the surface polaritons supported by the surface in the absence of the random roughness becomes non-reciprocal, i.e. the wavenumber k ₊(ω) for a surface polariton of frequency ω propagating in the +x ₁-direction is unequal to the (magnitude of the) wavenumber k _?(ω) for a surface polariton of the same frequency propagating in the ?x ₁-direction. As a consequence of this they find that the peak in the angular distribution of the intensity of the incoherent component of the scattered light that is observed in the retroreflection direction in the absence of the magnetic field—enhanced backscattering—is shifted in the direction of larger scattering angles with increasing magnetic field strength. At the same time the width of the peak increases and its amplitude decreases. When the frequency of the incident light is high enough that the dispersion curve for surface polaritons on the planar surface becomes completely non-reciprocal, i.e. the surface polariton propagates only in the +x ₁-direction but not in the ?x ₁-direction, the enhanced backscattering is completely suppressed. These results are interpreted as being due to the breakdown of the coherency between a given light/surface polariton path that contributes to backscattering and its time-reversed partner, caused by the removal of time-reversal symmetry from the scattering system by the application of the external magnetic field. They provide strong evidence for the fundamenlal role played by surface polaritons in the enhanced backscattering of light from small RMS slope random surfaces.     

Dependences of the refractive indices on the proton concentration in H:LiNbO3 waveguides

Proton-exchanged optical waveguides in lithium niobate crystals exhibit a rich variety of structures and phases. It is established that seven H_xLi_1−x NbO₃ crystalline phases with a lithium niobate structure may form under various conditions of proton exchange and post-exchange annealing. A method is proposed to determine the proton concentration in the various phases identified. Relationships are established between the structural parameters, the proton concentration, and the ordinary and extraordinary refractive indices of various H_xLi_1−x NbO₃ crystalline phases. The results can explain various optical phenomena observed in proton-exchanged waveguides and permit prediction of the characteristics of light-guide structures. Zh. Tekh. Fiz. 69, 47–57 (March 1999)     

Stimulated polariton-polariton scattering and dynamic Bose-Einstein condensation of polaritons in GaAs microcavities under excitation near the exciton resonance

The dynamics of formation of the macroscopically occupied polariton mode at the bottom of the polariton band E _LP(k = 0) and its spin polarization under the quasiresonant pulse excitation of excitons (E = E _X ) with large values of quasi-momentum have been studied in planar GaAs microcavities. It has been found that the growth in the depth E _X − E _LP(k = 0) of the polariton band leads to the change in the formation mechanism for the k = 0 condensate state from the direct parametric decay of the photoexcited mode (due to the polariton-polariton interaction) to the dynamic condensation of polaritons, which results from the multiple scattering of polaritons by both phonons and polaritons. At the same time, in microcavities with E _X − E _LP(k = 0) > 3.5 meV, the direct decay of the photoexcited mode does not disappear, becoming an efficient mechanism for the filling of the states located at the k-space ring, corresponding to the energies E _LP(k) ≈ E _X − 2.6 meV.     

Effect of constant-energy surface anisotropy on the thermoelectric figure-of-merit of the n-Bi2 (Te,Se,S)3 solid solutions

A study is reported of the thermoelectric and galvanomagnetic properties of n-Bi₂Te_3−x−y Se_xSe_y solid solutions for 0.12⩽x⩽0.36 and 0.12⩽y⩽0.21 within the 80–300 K temperature region. The thermoelectric figure-of-merit Z has been found to correlate with the parameters of the many-valley energy-band model including anisotropic carrier scattering. It is shown that a decrease in the constant-energy surface anisotropy and scattering anisotropy results in a growth of Z for optimum carrier concentrations in the solid solution. Fiz. Tverd. Tela (St. Petersburg) 41, 187–192 (February 1999)     

Thermal boundary layer for non-Newtonian fluid

Summary Analytical and numerical solutions for the momentum and thermal boundary layer equations of a non-Newtonian power law fluid are presented. The flow is assumed to be under the influence of an external magnetic fieldB (x) applied perpendicular to the surface and an electric fieldE(x) perpendicular toB(x) and the direction of the longitudinal velocity in the boundary layer. For the power law fluid it is assumed that the shear stress is proportional to then-th power of the velocity gradient andn is called the flow index. The variations of the velocity fieldf′, the temperature field θ, the shear stress on the surfaceτ _W , the displacement thicknessδ ₁ and the momentum thicknessδ ₂ with the magnetic-field parameter γ, the flow indexn, the heat transfer indexS and the Prandtl number Pr are studied. It is found that, if the outer flow velocityU(x) (potential flow) is proportional to the arc lengthx raised to a powerm, then the similarity solution for the thermal boundary layer equation is possible only whenm=1/3, which represents flow past a wedge of included angle π/2. It is established that the temperature of the wedge increases with the increase of γ, Pr,S and the decrease ofn. In general the magnetic field can be used as a heater for the surface of the wedge.     

Iron garnet films with enhanced thermal stability of their magnetic parameters

The ferromagnetic resonance in Y₃Fe_5−x Ga_xO₁₂ (0⩽x⩽0.63), iron garnet films obtained by liquid phase epitaxy on substrates of gadolinium gallium garnet is studied at temperatures of 213–353 K. It is found that in the case of liquid phase epitaxy the distribution coefficient of the gallium in the films varies from 2.2 to 4.0, depending on the composition and growth conditions. It is found that the resonance magnetic fields can be temperature stabilized through temperature-induced changes in the saturation magnetization and anisotropy field. Zh. Tekh. Fiz. 68, 46–50 (September 1998)     

Far infrared measurements of bulk and surface phonons in GaAs/AlAs superlattices

We have used far-infrared oblique-incidence reflection spectroscopy to study bulk phonon polaritons, and attenuated total reflection (ATR) spectroscopy to study surface phonon polaritons, in long-period GaAs/Al_xGa_1–xAs and short-period GaAs/AlAs superlattices. Results on the former are in good agreement with an effective-medium bulk-slab model of the dielectric tensor of the superlattice; results on the latter are analysed in terms of a model that contains dielectric-tensor contributions from the confined optic phonons.     

Optically active Er3+ centers in Si/Si1 ? x Ge x structures under optical pumping

The Si/Si_{1 − x} Ge _x :Er/Si heterostructures, which are of interest for laser applications, have been investigated. The types of optically active Er³⁺ centers making a dominant contribution to the photoluminescence response of the structures studied are analyzed and their relationship with the parameters of the Si_{1 − x} Ge _x :Er heterolayer and the post-growth annealing conditions is shown. On the basis of the PL kinetic analysis of the structures with an isolated type of optically active Er³⁺ centers, it is concluded that population inversion of Er³⁺ ion states can be obtained under optical pumping and the effect of nonradiative recombination channels in Si_{1 − x} Ge _x :Er heterolayers on the excitation efficiency of Er centers and the conditions for population inversion is shown. Original Russian Text ? L.V. Krasilnikova, N.A. Baidakova, M.V. Stepikhova, Z.F. Krasilnik, V.Yu. Chalkov, V.G. Shengurov, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 1, pp. 103–108.     

New type of excitonic radiation in the solid solutions CdS1−x Sex

Manifestations of bulk crystalline regions with stacking faults are detected in the reflection and photoluminescence spectra of CdS_1-x Sex crystals with a variety of compositions. The magnitude of the crystal-field anisotropy and the spin-orbit splitting in these crystals are estimated. It is shown that reabsorption affects the form of the photoluminescence in crystals with stacking faults. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 3, 221–225 (10 August 1999)     

Measurement of the differential and integral distribution of diffuse x-ray scattering intensity from defects in thin strained layers

Double-and triple-crystal diffractometry have been used to study structural perfection of a ∼1 μm-thick Ga_1−x In_xSb_1−y As_y epitaxial film (x=0.9, y=0.8) on GaSb. It is shown that scattering from samples of this system can be divided into coherent and diffuse. The arrangement of reciprocal-lattice points of the film and substrate in the two-dimensional intensity distribution for asymmetrical reflections argues for the absence of elastic-strain relaxation. No dislocation networks are formed, and the diffuse scattering is produced by Coulomb-type defects. Localization of diffuse scattering in reciprocal space suggests that these defects reside in the epitaxial film. The diffuse-scattering distribution in asymmetrical reflections is shown to be anomalous; namely, it extends in a direction parallel to the surface and is split into two maxima. Schemes have been proposed and realized for measuring integral distributions of diffracted intensity along the surface and perpendicular to it, and their potential for studying diffuse scattering from defects is explored. Fiz. Tverd. Tela (St. Petersburg) 39, 1188–1193 (July 1997)     

Concentration dependence of the compositional order-disorder phase-transition temperature in the solid solution PbSc0.5Nb0.5O3-PbSc0.5Ta0.5O3

The degree of compositional order S of crystals of the complete series of solid solutions (1−x)PbSc_0.5Nb_0.5O₃-xPbSc_0.5Ta_0.5O₃ grown under identical conditions is determined by x-ray examination. The form of the dependence S(x) and the variations of S for different compositions, after high-temperature annealing, indicate that the concentration dependence of the compositional order-disorder phase-transition temperature is close to linear in the given system of solid solutions. Fiz. Tverd. Tela (St. Petersburg) 41, 1828–1830 (October 1999)     

Infrared lattice-reflection spectroscopy of Zn1−x CdxSe epitaxial layers grown on a GaAs substrate by molecular-beam epitaxy

Results are presented of the first measurements of infrared reflection spectra of Zn_1−x Cd_xSe films (x=0–0.55; 1) grown on a GaAs substrate by molecular-beam epitaxy. It is shown by a mathematical analysis of the experimental spectra that the investigated Zn_1−x Cd_xSe alloy system manifests a unimodal rearrangement of its vibrational spectrum as the composition is varied. Fiz. Tverd. Tela (St. Petersburg) 41, 982–985 (June 1999)     

Role of surface phenomena in the magnetoresistivity of polycrystalline manganites La1−x CaxMnO3

The dc electrical resistivity and magnetoresistivity of polycrystalline manganites La_1−x Ca_xMnO₃ (x=0–0.3) are investigated as functions of the temperature, magnetic field and electric field, along with the microwave surface resistance. The investigations show that the dc electrical resistivity and magnetoresistivity are governed by the surface properties of the intergranular boundaries. The dc electrical resistivity is observed to decrease substantially (tenfold) for a comparatively small electric field (E⋟100 V/cm). Estimates are obtained for the internal electrical resistivity of the granules, the thickness of the contact layer (which depends on the temperature and the magnetic field), and the height of the potential barrier between the interfaces separating the surface layer and inner layer of a granule. Fiz. Tverd. Tela (St. Petersburg) 40, 1881–1884 (October 1998)     

Rotation of the Fermi surface in the transition layer of bicrystals of an anisotropic metal

The Shubnikov-de Haas effect is investigated in bicrystals of p-type Bi_1−x Sb_x (0.063⩽x⩽0.088) alloys in static magnetic fields up to 15 T. The constant-energy surface of -holes in the transition layer of the bicrystals is found to be rotated ∼90° from its position in single domains (monoblocks). Fiz. Tverd. Tela (St. Petersburg) 39, 1713–1716 (October 1997)