Formation and characterization of Sb2Te3 nanofilms on Pt by electrochemical atomic layer epitaxy

A nanocrystalline Sb2Te3 VA-VIA group compound thin film was grown via the route of electrochemical atomic layer epitaxy (ECALE) in this work for the first time. The electrochemical behavior of Te and Sb on Pt, Te on Sb-covered Pt, and Sb on Te-covered Pt was studied by methods of cyclic voltammetry, anode potentiodynamic scanning, and coulometry. A steady deposition of the Sb2Te3 compound could be attained after negatively stepped adjusting of the UPD potentials of Sb and Te on Pt in each of the first 40 depositing cycles. The structure of the deposit was proven to be the Sb2Te3 compound by X-ray diffraction. The 2:3 stoichiometric ratio of Sb to Te was verified by EDX quantitative analysis, which is consistent with the result of coulometric analysis. A nanocystalline microstructure was observed for the Sb2Te3 deposits, and the average grain size is about 20 nm. Cross-sectional SEM observation shows an interface layer about 19 nm in thickness sandwiched between the Sb2Te3 nanocrystalline deposit and the Pt substrate surface. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy and it is blueshifted in comparison with that of the bulk Sb2Te3 single crystal because of its nanocrystalline microstructure.     

电沉积Bi2Te3基薄膜的电化学阻抗谱研究

以不锈钢为基底,利用电化学沉积方法制备Bi2Te3基薄膜材料,并采用X射线衍射技术、电子探针微观分析等方法对薄膜进行结构和成分表征,通过电化学阻抗谱技术对不锈钢表面Bi2Te3的电化学沉积机理进行了初步探讨.结果表明Bi-Te和Bi-Te-Se体系具有相似的电化学沉积机理,即Bi3+和2HTeO+或H2SeO3首先被还原为Bi单质和Te或Se单质,然后Bi单质与Te或Se单质反应生成Bi2Te3基化合物,而Bi-Sb-Te体系中,2HTeO+首先被还原为Te单质,生成的Te再与Bi3+和Sb(III)反应生成Bi2Te3基化合物,三种体系的沉积都受电化学极化控制.     

Pressure-induced disordered substitution alloy in Sb2Te3

A new type of disordered substitution alloy of Sb and Te at above 15.1 GPa was discovered by performing in situ high-pressure angle-dispersive X-ray diffraction experiments on antimony telluride (Sb(2)Te(3)), a topological insulator and thermoelectric material, at room temperature. In this disordered substitution alloy, Sb(2)Te(3) crystallizes into a monoclinic structure with the space group C2/m, which is different from the corresponding high-pressure phase of the similar isostructural compound Bi(2)Te(3). Above 19.8 GPa, Sb(2)Te(3) adopts a body-centered-cubic structure with the disordered atomic array in the crystal lattice. The in situ high-pressure experiments down to about 13 K show that Sb(2)Te(3) undergoes the same phase-transition sequence with increasing pressure at low temperature, with almost the same phase-transition pressures.     

添加La的Bi2Te3和Bi0.5Sb1.5Te3热电材料的电磁感应熔炼法制备及其热电性能

在N2气保护下,采用电磁感应法制备了添加La的Bi2Te3和Bi0.5Sb1.5Te3。运用X射线粉末衍射、电感耦合等离子光谱和扫描电子显微镜对材料的物相成分和形貌进行了表征。研究了La对Bi2Te3和Bi0.5Sb1.5Te3热电材料的电导率(σ)、Seebeck系数(S)和热导率(κ)的影响。实验结果表明,添加La明显降低了2种材料的热导率,提高了热电优值(ZT),添加La的Bi0.5Sb1.5Te3的热电优值在室温超过了1。     

Large-area Sb2Te3 nanowire arrays

High-density large-area nanowire arrays of thermoelectric material Sb(2)Te(3) have been successfully prepared using electrochemical deposition into the channels of the porous anodic alumina membrane. The morphologies, structure, and composition of the as-prepared Sb(2)Te(3) nanowires have been characterized using field-emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. Individual Sb(2)Te(3) nanowires are single crystalline and continuous with uniform diameters ( approximately 50 nm) throughout the entire length. The atomic ratio of Sb to Te is very close to the 2:3 stoichiometry.     

Vapor-liquid-solid and vapor-solid growth of phase-change Sb2Te3 nanowires and Sb2Te3/GeTe nanowire heterostructures

We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and Ge are localized in the Sb2Te3 and GeTe portions, respectively, confirming the alloy-free composition in the core/shell heterostructures. Transmission electron microscopy and diffraction studies show that Sb2Te3 and GeTe regions exhibit rhombohedral crystal structure. Both Sb2Te3 and GeTe grow along the [110] direction with an epitaxial interface between them. Electrical characterization of individual nanowires and nanowire heterostructures demonstrates that these nanostructures exhibit memory-switching behavior.     

Preparation of bismuth telluride thin film by electrochemical atomic layer epitaxy (ECALE)

Thin-layer electrochemical studies of the underpotential deposition (UPD) of Bi and Te on cold rolled silver substrate have been performed. The voltammetric analysis of underpotential shift demonstrates that the initial Te UPD on Bi-covered Ag and Bi UPD on Te-covered Ag fitted UPD dynamics mechanism. A thin film of bismuth telluride was formed by alternately depositing Te and Bi via an automated flow deposition system. X-ray diffraction indicated the deposits of Bi₂Te₃. Energy Dispersive X-ray Detector quantitative analysis gave a 2: 3 stoichiometric ratio of Bi to Te, which was consistent with X-ray Diffraction results. Electron probe microanalysis of the deposits showed a network structure that results from the surface defects of the cold rolled Ag substrate and the lattice mismatch between substrate and deposit. Translated from Chinese Journal of Applied Chemistry, 2005, 22 (11) (in Chinese)     

Bismuth telluride (Bi2Te3) nanowires: synthesis by cyclic electrodeposition/stripping, thinning by electrooxidation, and electrical power generation

Nanowires composed of the thermoelectric material Bi2Te3 were synthesized on highly oriented pyrolytic graphite (HOPG) electrodes using the electrochemical step edge decoration (ESED) method. Nanowire synthesis was initiated by applying a voltage pulse of -0.75 V versus SCE for 5 ms to an HOPG electrode in an aqueous solution containing both Bi3+ and TeO22-, thereby producing nuclei at the step edges. Bi2Te3 was electrodeposited onto these nuclei using a cyclic electrodeposition-stripping scheme that involved the electrodeposition of bismuth-rich Bi2Te3 on a negative-going voltammetric scan (to -0.05 V) and the subsequent anodic stripping of excess bismuth from these nanowires during a positive-going scan (to +0.35 V). When this cycle was repeated 10-50 times, Bi2Te3 nanowires in the 100-300-nm-diameter range were obtained. These nanowires were narrowly dispersed in diameter (RSDdia = 10-20%), were more than 100 microm in length, and were organized into parallel arrays containing hundreds of wires. Smaller nanowires, with diameters down to 30 nm, were obtained by electrooxidizing 150-nm-diameter Bi2Te3 nanowires at +0.37 V under conditions of kinetic control. This oxidation process unexpectedly improved the uniformity of Bi2Te3 nanowires, and X-ray photoelectron spectroscopy (XPS) shows that these nanowires retain a Bi2Te3 core but also have a thin surface layer composed of Bi and Te oxides. The ability of Bi2Te3 nanowires to generate electrical power was assessed by transferring ensembles of these nanowires onto cyanoacrylate-coated glass surfaces and evaporating 4-point nickel contacts. A dimensionless figure of merit, ZT, ranging from 0 to 0.85 was measured for fresh samples that were less than 1 day old. XPS reveals that Bi2Te3 nanowires are oxidized within a week to Bi2O3 and TeO2. These oxides may interfere with the application by evaporation of electrical contacts to these nanowires.     

Electrochemistry of bismuth interlayers in (Bi2)m(Bi2Te3)n superlattice

Journal of Solid State Electrochemistry - Selective electrochemical transformations of bismuth interlayers in (Bi2)m(Bi2Te3)n superlattices can be of interest as a means of thermoelectric materials...     

Preliminary studies in the electrodeposition of PbSe/PbTe superlattice thin films via electrochemical atomic layer deposition (ALD)

This paper concerns the electrochemical growth of compound semiconductor thin film superlattice structures using electrochemical atomic layer deposition (ALD). Electrochemical ALD is the electrochemical analogue of atomic layer epitaxy (ALE) and ALD, methods based on nanofilm formation an atomic layer at a time, using surface-limited reactions. Underpotential deposition (UPD) is a type of electrochemical surfaced-limited reaction used in the present studies for the formation of PbSe/PbTe superlattices via electrochemical ALD. PbSe/PbTe thin-film superlattices with modulation wavelengths (periods) of 4.2 and 7.0 nm are reported here. These films were characterized using electron probe microanalysis, X- ray diffraction, atomic force microscopy (AFM), and infrared reflection absorption measurements. The 4.2 nm period superlattice was grown after deposition of 10 PbSe cycles, as a prelayer, resulting in an overall composition of PbSe0.52Te0.48. The 7.0 nm period superlattice was grown after deposition of 100 PbTe cycle prelayer, resulting for an overall composition of PbSe0.44Te0.56. The primary Bragg diffraction peak position, 2theta, for the 4.2 superlattice was consistent with the average (111) angles for PbSe and PbTe. First-order satellite peaks, as well as a second, were observed, indicating a high-quality superlattice film. For the 7.0 nm superlattice, Bragg peaks for both the (200) and (111) planes of the PbSe/PbTe superlattice were observed, with satellite peaks shifted 1 degrees closer to the (111), consistent with the larger period of the superlattice. AFM suggested conformal superlattice growth on the Au on glass substrate. Band gaps for the 4.2 and 7.0 nm period superlattices were measured as 0.48 and 0.38 eV, respectively.     

Design in solid state chemistry based on phase homologies. Sb4Te3 and Sb8Te9 as new members of the series (Sb2Te3)m.(Sb2)n

Sb4Te3 and Sb8Te9 are members of the homology (Sb2Te3)m.(Sb2)n, with structures consisting of Sb2- and Sb2Te3-type slabs stacked along [001]; electrical conductivity and thermopower are reported for several members of this family.     

Synthesis in ionic liquids: [Bi2Te2Br](AlCl4), a direct gap semiconductor with a cationic framework

The Lewis acidic ionic liquid EMIMBr-AlCl(3) (EMIM = 1-ethyl-3-methylimidazolium) allows a novel synthetic route to the semiconducting layered metal chalcogenides halide [Bi(2)Te(2)Br](AlCl(4)) and its Sb analogue. [Bi(2)Te(2)Br](AlCl(4)) is a direct band gap, strongly anisotropic semiconductor and consists of cationic infinite layers of [Bi(2)Te(2)Br](+) and [AlCl(4)](-) anions inserted between the layers.     

Direct synthesis of Te/Bi2Te3 nanocomposite powders by a polyol process

Research on Chemical Intermediates - Tellurium nanotube-based bismuth telluride (Te/Bi2Te3) nanocomposite powders have been synthesized by the polyol process using Bi (NO3)3, TeCl4 as the metal...     

掺杂Sb对纳米TiO2薄膜的超亲水性和微结构的影响

用溶胶-凝胶法将纳米TiO2:Sb薄膜沉积在玻璃基板上.研究了掺杂浓度对薄膜的光致超亲水性、薄膜结构和晶相转变的影响.结果表明,纯TiO2薄膜中， TiO2不仅以无定型态存在，而且还以板钛矿和锐钛矿的形式存在.掺杂Sb提高了TiO2由无定型向板钛矿和锐钛矿转变的速率.掺入适量的Sb后， TiO2薄膜表现出更好的光致超亲水性.由XRD谱可算出薄膜的晶粒大小为13.3～20.0 nm.     

Rb(4)Hg(5)(Te(2))(2)(Te(3))(2)Te(3), [Zn(en)3](4)In(16)(Te2)4(Te3)Te22, and K2Cu2(Te2)(Te3): novel metal polytellurides with unusual metal-tellurium coordination

Three novel metal polytellurides Rb(4)Hg(5)(Te(2))(2)(Te(3))(2)Te(3) (I), [Zn(en)(3)](4)In(16)(Te(2))(4)(Te(3))Te(22) (II), and K(2)Cu(2)(Te(2))(Te(3)) (III) have been prepared by solvothermal reactions in superheated ethylenediamine at 160 degrees C. Their crystal structures have been determined by single-crystal X-ray diffraction techniques. Crystal data for I: space group Pnma, a = 9.803(2) A, b = 9.124(2) A, c = 34.714(7) A, Z = 4. Crystal data for II: space group C2/c, a = 36.814(7) A, b = 16.908(3) A, c = 25.302(5) A, beta = 128.46(3) degrees, Z = 4. Crystal data for III: space group Cmcm, a = 11.386(2) A, b = 7.756(2) A, c = 11.985(2) A, Z = 4. The crystal structure of I consists of 1D infinite ribbons of [Hg(5)(Te(2))(2)(Te(3))(2)Te(3)](4-), which are composed of tetrahedral HgTe(4) and trigonal HgTe(3) units connected through the bridging Te(2-), (Te(2))(2-), and (Te(3))(2-) ligands. II is a layered compound containing InTe(4) tetrahedra that share corners and edges via Te, Te(2), and Te(3) units to form a 2D slab that contains relatively large voids. The [Zn(en)(3)](2+) template cations are filled in these voids and between the slabs. The primary building blocks of III are CuTe(4) tetrahedra that are linked by intralayer (Te(3))(2-) and interlayer (Te(2))(2-) units to form a 3D network with open channels that are occupied by the K(+) cations. All three compounds are rare polytelluride products of solvothermal reactions that contain both Te(2) and Te(3) fragments with unusual metal-tellurium coordination.     

Ag2S/Ag3PO4/Ni复合薄膜的制备及其光催化性能

采用电化学方法制备Ag_2S/Ag_3PO_4/Ni复合薄膜,以扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外-可见漫反射光谱(UVVis DRS)对薄膜的表面形貌、晶相结构、光谱特性及能带结构进行了表征,以罗丹明B为模拟污染物对薄膜的光催化活性和稳定性进行了测定,采用向溶液中加入活性物种捕获剂的方法对薄膜的光催化机理进行了探索。结果表明:最佳工艺制备的Ag_2S/Ag_3PO_4/Ni是由均匀的球形纳米颗粒构成的薄膜,其光催化活性明显优于纯Ag_3PO_4/Ni薄膜和纯Ag_2S/Ni薄膜,且在保持薄膜光催化活性基本不变的前提下可循环使用6次。提出了可见光下Ag_2S/Ag_3PO_4/Ni复合薄膜光催化降解罗丹明B的反应机理。     

TiO2-MoO3复合纳米管阵列薄膜的制备及其可见光活性

通过阳极氧化的方法制备TiO₂纳米管薄膜, 在MoO₃存在的条件下对该薄膜进行热处理得到TiO₂-MoO₃复合纳米管阵列薄膜. 利用X射线衍射(XRD), 扫描电子显微镜(SEM), X射线光电子能谱(XPS), 电化学阻抗谱(EIS), Mott-Schottky 及光电化学方法对得到的薄膜进行了表征. XRD结果表明, TiO₂-MoO₃复合纳米管薄膜中的TiO₂主要为锐钛矿晶型. SEM实验证实了薄膜纳米管结构的存在, 样品中的MoO₃均匀地分散在TiO₂纳米管表面. 利用XPS方法分析了TiO₂-MoO₃复合纳米管薄膜元素的组成, 结果表明, MoO₃在TiO₂表面形成TiO₂-MoO₃复合纳米管薄膜. 研究了热处理温度以及热处理时间对样品的光电化学性能的影响, 相对于单纯TiO₂纳米管薄膜, 适量引入MoO₃提高了样品在可见光区的光电响应能力, 样品的平带电位负移. 在450 °C热处理60 min制得的TiO₂-MoO₃复合半导体纳米管阵列薄膜光电响应活性最高.     

Ag2S/Ag3PO4/Ni复合薄膜的制备及其光催化性能

采用电化学方法制备Ag₂S/Ag₃PO₄/Ni复合薄膜,以扫描电子显微镜（SEM）、X射线衍射（XRD）、紫外-可见漫反射光谱（UV-Vis DRS）对薄膜的表面形貌、晶相结构、光谱特性及能带结构进行了表征,以罗丹明B为模拟污染物对薄膜的光催化活性和稳定性进行了测定,采用向溶液中加入活性物种捕获剂的方法对薄膜的光催化机理进行了探索。结果表明：最佳工艺制备的Ag₂S/Ag₃PO₄/Ni是由均匀的球形纳米颗粒构成的薄膜,其光催化活性明显优于纯Ag₃PO₄/Ni薄膜和纯Ag₂S/Ni薄膜,且在保持薄膜光催化活性基本不变的前提下可循环使用6次。提出了可见光下Ag₂S/Ag₃PO₄/Ni复合薄膜光催化降解罗丹明B的反应机理。     

Fabrication of Sol-Gel Optical Waveguide by Hot-Dip Coating Process

The TiO₂: Sb nanoscale thin films were deposited on glass substrates by the sol–gel dip-coating method. The influence of the dopant density on the structure and the phase transformation of the thin films were investigated by X-ray diffraction (XRD) and Raman spectra. From the results of XRD, the thin films were in a majority of anatase state. The results of Raman spectra indicated that the non-doped TiO₂ thin film composed of not only anatase but also brookite phase. Dopant Sb enhances the transformation of the TiO₂ from brookite to anatase phase. After doping proper amount of Sb, the thin films show more superhydrophilicity than the non-doped TiO₂ thin film as well. The crystal size of the TiO₂ : Sb is about 13.3–20 nm calculated from the XRD patterns.     

脉冲激光沉积非晶态Ni-V2O5 复合薄膜及其电化学性能研究

首次报道了用355 nm脉冲激光沉积非晶态Ni-V2O5复合薄膜电极的电化学性能.采用不同摩尔比的NixV2O5 靶(x=0.1,0.3,0.5),在不同的基片温度(Ts)和O2气压力下制备了Ni-V2O5复合薄膜.XRD 和SEM测定表明, 在不锈钢基片上, Ts=300℃和氧气压力为14 Pa沉积0.5 h得到的是非晶态的Ni-V2O5薄膜.将此非晶态的Ni0.3V2O5薄膜电极用于锂电池的正极,与纯V2O5薄膜相比,不仅具有良好的放电速率性能和高的比容量,而且其充放电循环稳定性优异.该薄膜电极在放电速率为20 C时测得的比容量达200 mAh/g,并经1000次以上的充放电循环无明显的衰减.