Study of Be + C elastic scattering at energies near the Coulomb barrier

In this work, angular distribution measurements for the elastic channel were performed for the ⁹Be + ¹²C reaction at the energies ELab=13.0$E_{\mathit{Lab}}=13.0$, 14.5, 17.3, 19.0 and 21.0 MeV, near the Coulomb barrier. The data have been analyzed in the framework of the double folding São Paulo potential. The experimental elastic scattering angular distributions were well described by the optical potential at forward angles for all measured energies. However, for the three highest energies, an enhancement was observed for intermediate and backward angles. This can be explained by the elastic transfer mechanism.     

Analysis of alpha-cluster transfer in O + C and C + O at energies near Coulomb barrier

The aim of this work is to track the phenomenon of α-cluster transfer mechanism at low energies 1.25, 1.5 and 1.75 MeV/n, close to the Coulomb barrier energy for ¹²C(¹⁶O, ¹²C)¹⁶O and ¹⁶O(¹²C, ¹⁶O)¹²C nuclear systems. The measurements of the angular distribution show a significant increase in the differential cross section at large angles due to alpha-transfer mechanism. The optical model code SPI-GENOA could be used effectively for fitting the experimental data with the theoretical predictions nearly up to angle 90°, where the differential cross section decreases steadily with increasing the scattering angle. For the second hemisphere, at angles greater than 100°, there is a large increase in cross section due to the contribution of α-transfer mechanism, and the Distorted Wave Born Approximation (DWBA) method could be used effectively for fitting the experimental data with the theoretical predictions at this region using (DWUCK5) code.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects

High-κ dielectrics SrZrO₃ were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600 °C, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO₃ became polycrystalline in the meantime.     

Surface restructuring process on a Ag/Ge(0 0 1) surface studied by photoelectron spectroscopy

The atomic structure and charge distribution of Ag adsorbed Ge(0 0 1) surfaces have been investigated by means of Ge 3d core- and Ag 4d core-levels photoelectron spectroscopy. A mono-atomic layer of Ag was deposited on the clean Ge(0 0 1) c(4×2) surface at 80 K. The Ge 3d spectrum measured at 80 K was deconvoluted into two surface components, which is consistent with the previously proposed Ag ad-dimer model. After annealing the surface at room temperature, the rearrangement of the charge distribution was revealed to include electron transfer from Ge to Ag in conjunction with the surface restructuring process by the annealing.     

In situ observation of a Au (1 1 1) electrode surface using the X-ray reciprocal-lattice space imaging method

A rapid X-ray diffraction method was proposed for in situ observation of a surface-intermediate structure on a liquid-solid interface. It used a combination of higher-energy monochromatic synchrotron X-rays in grazing incidence and an X-ray two-dimensional detector. Overall patterns were in situ taken, with one-time exposure, of the reciprocal-lattice space of a Au (1 1 1) electrode surface which was fixed at an angular position. We deduced change in crystal domain shapes of surface intermediates as well as its smaller lattice distortion by observing images of reconstructed surface rods during a surface-structural phase transition from the reconstructed surface to the bulk terminated surface. An anisotropic shape of surface-crystal domains was also observed.     

Aluminium adsorption on Ir(1 1 1) at a quarter monolayer coverage: A first-principles study

We present an ab initio density-functional study for aluminium adsorption on Ir(1 1 1) at high symmetry sites, namely, the fcc-, hcp-hollow, top and bridge sites. In each case, we calculate the atomic geometry, average binding energy, work function, and surface dipole moment at the coverage of 0.25 monolayer. We find the favourable structure to be Al at threefold hcp-hollow site, with a corresponding binding energy of 4.46 eV. We present and compare the electronic properties of the two lowest energy structures, i.e., at the threefold hollow sites and discuss the nature of the Al-Ir bond and binding site preference. In particular, we observe a large hybridization of Al-3s, 3p and Ir-5d states near Fermi level, forming an inter-metallic bonds. This results in a significant electron transfer from the Al atoms to the Ir(1 1 1) substrate, inducing an outward pointing surface dipole moment and a large decrease in the work function of 1.69 eV for Al in the hcp-hollow site. Compared to the fcc-hollow site, adsorption in the hcp-hollow site results in a lower density-of-states at the Fermi level, as well as a greater hybridization in the bonding states.     

Co-induced nano-structures on Si(1 1 1) surface

The interaction of cobalt atoms with silicon (1 1 1) surface has been investigated by means of scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Besides the Co silicide islands, we have successfully distinguished two inequivalent Co-induced reconstructions on Si(1 1 1) surface. Our high-resolution STM images provide some structural properties of the two different derived phases. Both of the two phases seem to form islands with single domain. The new findings will help us to understand the early stage of Co silicide formations.     

Temperature dependent photoluminescence down to 4.2 K in EuTFC

The temperature dependence of photoluminescence in Europium tris[3-(trifluoro-methylhydroxymethylene)-(+)-camphorate] (EuTFC) embedded in polymer films has been examined from 40 K down to 4.2 K with the goal of preparing sensor films for low-temperature thermal imaging. The behavior of EuTFC showed significant difference when based on polystyrene compared to poly(n-alkyl methacrylate)s. In poly(n-alkyl methacrylate)s prepared by standard methods for imaging applications, the photoluminescence is fully saturated below 30 K, whereas in polystyrene films there is a strong temperature dependence even down to 4.2 K. By optimizing the preparation procedure for films made of poly(butyl methacrylate) (PBMA) and poly(methyl methacrylate), also these polymers became very sensitive down to liquid helium temperature. The maximum temperature sensitivity of EuTFC in PBMA is found to be 1.0%/K at 4.2 K. The problem of delamination and cracking of the polymer film at cryogenic temperature is also avoided by the special preparation method.     

Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surface

The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five () periodic bands have been observed in thicker films. Taking the () periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1×1) structure. Of the () periodic bands observed in thick films, four of them are well explained by the folding of the (1×1) bands into a () periodicity. Regarding the other band, the three () periodic bands would originate from the electronic states related to the inner Si layers that form a () structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.     

Magnetic ground state and spin waves in A(A = K, Rb or Cs)Fe1.5Se2

We present theoretical results on the ground state phase diagram, spin waves and dynamic structure factor on the J₁-J₂ model. In the reasonable physical parameter region corresponding to AFe_1.5Se₂, the A-collinear antiferromagnetic phase is stable. The spin wave spectra have two acoustic branches and four optical branches for this phase on the rhombus-ordered vacancy lattice, and each of them is twofold degenerate. However, they have one nondegenerate acoustic branch and two nondegenerate optical branches on the square-ordered vacancy lattice. To offer the theoretical guidance for the further experiments, we also discuss the magnetic excitation spectra and the inelastic neutron scattering pattern based on linear spin wave theory.     

The H2+ molecular ion: Low-lying states

Matching for a wavefunction the WKB expansion at large distances and Taylor expansion at small distances leads to a compact, few-parametric uniform approximation found in Turbiner and Olivares-Pilon (2011). The ten low-lying eigenstates of H₂⁺ of the quantum numbers (n,m,Λ,±)$(n,m,\Lambda ,\pm )$  with n=m=0$n=m=0$ at Λ=0,1,2$\Lambda =0,1,2$, with n=1$n=1$, m=0$m=0$ and n=0$n=0$, m=1$m=1$ at Λ=0$\Lambda =0$ of both parities are explored for all interproton distances R$R$. For all these states this approximation provides the relative accuracy ?10⁻⁵$?10^{-5}$ (not less than 5 s.d.) locally, for any real coordinate x$x$ in eigenfunctions, when for total energy E(R)$E\left(R\right)$ it gives 10-11 s.d. for R∈[0,50]$R\in [0,50]$  a.u. Corrections to the approximation are evaluated in the specially-designed, convergent perturbation theory. Separation constants are found with not less than 8 s.d. The oscillator strength for the electric dipole transitions E1$E1$ is calculated with not less than 6 s.d. A dramatic dip in the E1$E1$ oscillator strength f_{1sσg−3pσu}$f_{1s{\sigma }_g-3p{\sigma }_u}$ at R∼R_eq$R\sim R_{eq}$ is observed. The magnetic dipole and electric quadrupole transitions are calculated for the first time with not less than 6 s.d. in oscillator strength. For two lowest states (0,0,0,±)$(0,0,0,\pm )$ (or, equivalently, 1sσ_g$1s{\sigma }_g$ and 2pσ_u$2p{\sigma }_u$ states) the potential curves are checked and confirmed in the Lagrange mesh method within 12 s.d. Based on them the Energy Gap between 1sσ_g$1s{\sigma }_g$ and 2pσ_u$2p{\sigma }_u$ potential curves is approximated with modified Pade Re^−R[Pade(8/7)](R)$R{e}^{-R}\left[Pade(8/7)\right]\left(R\right)$ with not less than 4-5 figures at R∈[0,40]$R\in [0,40]$ a.u. Sum of potential curves E_1sσg+E_2pσu$E_{1s{\sigma }_g}+E_{2p{\sigma }_u}$ is approximated by Pade 1/R[Pade(5/8)](R)$1/R\left[Pade(5/8)\right]\left(R\right)$ in R∈[0,40]$R\in [0,40]$ a.u. with not less than 3-4 figures.     

Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces

The competition between confinement potential fluctuations and band-gap renormalization (BGR) in GaAs/Al_xGa_1−xAs$\mathrm{GaAs}/{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ quantum wells grown on [1 0 0] and [3 1 1]A GaAs substrates is evaluated. The results clearly demonstrate the coexistence of the band-tail states filling related to potential fluctuations and the band-gap renormalization caused by an increase in the density of photogenerated carriers during the photoluminescence (PL) experiments. Both phenomena have strong influence on temperature dependence of the PL-peak energy (E_PL(T))$(E_{\mathit{PL}}(T))$. As the photon density increases, the E_PL can shift to either higher or lower energies, depending on the sample temperature. The temperature at which the displacement changes from a blueshift to a redshift is governed by the magnitude of the potential fluctuations and by the variation of BGR with excitation density. A simple band-tail model with a Gaussian-like distribution of the density of state was used to describe the competition between the band-tail filling and the BGR effects on E_PL(T).     

Quantum size effects of Pb overlayers at high coverages

We have studied Pb thin films as a function of the thickness up to 60 monolayers (MLs) using ab initio first principles and model calculations. Magic heights corresponding to a modulated oscillatory pattern of the energy of Pb(1 1 1) films have been measured up to about 30 MLs. We demonstrate that this behaviour continues even for higher thickness due to an extra second modulation pattern in the energetics of the metal film as a function of the number of atomic layers. The origin of this second modulation is the nesting of two close values of the Fermi wavelength in the (1 1 1) direction.     

Commuting conformal and dual conformal symmetries in the Regge limit

In this paper we continue our study of the dual SL(2,C)$\mathit{SL}(2,C)$ symmetry of the BFKL equation, analogous to the dual conformal symmetry of N=4$N=4$ super-Yang–Mills. We find that the ordinary and dual SL(2,C)$\mathit{SL}(2,C)$ symmetries do not generate a Yangian, in contrast to the ordinary and dual conformal symmetries in the four-dimensional gauge theory. The algebraic structure is still reminiscent of that of N=4$N=4$ SYM, however, and one can extract a generator from the dual SL(2,C)$\mathit{SL}(2,C)$ close to the bi-local form associated with Yangian algebras. We also discuss the issue of whether the dual SL(2,C)$\mathit{SL}(2,C)$ symmetry, which in its original form is broken by IR effects, is broken in a controlled way, similar to the way the dual conformal symmetry of N=4$N=4$ satisfies an anomalous Ward identity. At least for the lowest orders it seems possible to recover the dual SL(2,C)$\mathit{SL}(2,C)$ by deforming its representation, keeping open the possibility that it is an exact symmetry of BFKL. Independently of a possible relation to N=4$N=4$ scattering amplitudes, this opens an avenue for explaining the integrability of BFKL in terms of two finite-dimensional subalgebras.