Performance of In0.47Ga0.53As metal-semiconductor-metal hybrid receiver at 1.55 μm

We report on the performance at 1.55 m of a hybrid receiver combining an In_0.47Ga_0.53As metal-semiconductor-metal photodetector (with buried AllnAs buffer layer) with a GaAs MESFET preamplifier. A bit error rate of 10^-9 is measured at 1 Gbps with nonreturn to zero pseudorandom bit sequence (2¹⁵–1) at a received optical power of –19 dBm. Modification of the preamplifier design and a reduction of bond pad size could improve the sensitivity by 6–7 dB.     

Actively mode-locked 1.3 and 1.55 μm InGaAsP diode lasers

Active mode-locking of uncoated InGaAsP diode lasers having an external diffraction grating cavity was investigated experimentally. A high frequency r.f. signal and short-duration electrical pulses were used to drive the lasers. The pulse duration was measured by an ultrafast streak camera. Pulses as short as 13 ps at 1.3m and 29 ps at 1.55m were generated at a repetition rate of 1 GHz. The reason for obtaining broader pulses from the 1.55m laser which had the same structure as the 1.3m diode laser is explained.Formerly with GEC Hirst Research Centre, Wembley, Middlesex, UK.     

InP-based 1.3/1.55 μm wavelength demultiplexer with multimode interference and chirped grating

We propose a novel 1.3/1.55 m wavelength demultiplexer for integration with lasers and detectors on the InP material system. A chirp grating is placed inside a multimode interference (MMI) structure to shorten the device length and increase wavelength tolerance. The simulation using the bi-directional beam propagation method proves that the demultiplexer can have very low insertion loss and high isolation ratio. The approach of grating fabrication is also described.     

Geometrical dependence of optical negative index meta-materials at 1.55 μm

We have studied the geometry dependency of fishnet-like negative refractive index meta-materials (NIMs), and developed a process to fabricate such NIMs using nanoimprint lithography (NIL) in a controlled way for it to achieve negative refractive index in the desired frequency range. As an example, we fabricated a fishnet structure with a minimum negative refractive index of −1.7 at 1560 nm, which was only 10 nm off the targeted wavelength of 1550 nm.     

Fabrication and characterization of Ge-Ga-Sb-S glass microsphere lasers operating at ～1.9 μm

We report the fabrication and characterization of germanium gallium antimony sulfide(Ge–Ga–Sb–S or 2 S2 G, doped with Tm~(3+)ions) microsphere lasers operating at ～1.9-μm spectral band. Compared to the chalcogenide glasses that are used in previous microsphere lasers, this 2 S2 G glass has a lower transition temperature and a higher characteristic temperature. This implies that 2 S2 G microspheres can be fabricated at lower temperatures and the crystallization problem in the sphere-forming process can be alleviated. We show that hundreds of high-quality microspheres(quality factors higher than 105) of various diameters can be produced simultaneously via a droplet sphere-forming method. Microspheres are coupled with silica fiber tapers for optical characterizations. We demonstrate that Whispering Gallery mode(WGM)patterns in the 1.7–2.0 μm band can be conveniently obtained and that once the pump power exceeds a threshold, single-and multi-mode microsphere lasers can be generated. For a typical microsphere whose diameter is 258.64 μm, we demonstrate its laser threshold is 0.383 mW, the laser wavelength is 1907.38 nm, and the thermal sensitivity of the microsphere laser is29.56 pm/?C.     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.     

Thermal Lensing, Laser Performance at 1.06 μm and 0.53 μm of a NYAB Laser End-pumped by a Diode-laser-array

The thermal lensing, output characteristics of an end-pumped NYAB laser with high pump power levels and operated at the fundamental wavelength, and the manner of self-frequency-doubling, have been investigated. The thermal lensing in the NYAB crystal was found to be significantly stronger than that in Nd:YVO4 crystal. A maximum output of 3.2 W at 1.06 μm was achieved with an optical conversion efficiency of 29.1％ and an average slope efficiency of 37.5％. These results were found to be slightly inferior to those of Nd:YVO4 crystal. When operated in the fashion of selffrequency-doubling, 23 mW green output was obtained at the incident pump power of 5 W, such inefficient operation was attributed to the large mode size in the NYAB crystal.     

1.55 μm低温生长GaAs谐振腔增强型探测器

利用低温（200℃）生长的GaAs材料作为吸收层制备了GaAs基1.55 μm谐振腔增强型（RCE） 光电探测器,对其光电特性进行了分析、研究.无光照0偏压下探测器暗电流为8.0×10－12A;光电流谱峰值波长1563 nm;响应谱线半宽4 nm, 具有良好的波长选择性.     

Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers

We demonstrate a novel (to the best of our knowledge) 40?GHz passively mode-locked AlGaInAs/InP 1.55?μm laser with a low divergence angle (12.7°×26.3°), timing jitter of 1.2?ps (10?kHz-100?MHz), and a radio frequency linewidth of 25?kHz.     

Transmission of broadband saturable absorbing mixture for 10.6 μm nanosecond pulses

The transmission through a mixture consisting of sulphur hexafluoride (SF₆), ethyl alcohol (C₂H₅OH) and freon 502 (R502) was investigated with the 3-ns pulses of a TEA CO₂ laser operating at the 10P(20) line. The transmission characteristics of this mixture were measured. Thus, it was confirmed that the radiation beam traversing the gas-filled absorption cell exhibits self-interaction effects in a certain range of gas pressure, cell length and incident energy fluence. A more effective behavior of such an absorber was confirmed for mixtures under lower pressures and proportionally longer cells. Buffering behavior of the additives (C₂H₅OH and R502) was also assessed.     

Optimization of Mechanically Induced Long-Period Fibre Grating Transmission Spectrum

A new double-layer grating template is designed to reduce the out-of-band loss as much as 1.8dB when the loss of LPo3 reaches 10.2 dB. Meanwhile, we propose a method to remove the sidelobes in the transmission spectra by the adjustment of the thickness of pressure plates. The plate-thickness-induced shift of resonant wavelength and the attenuation of loss peak intensity when removing sidelobes can be modified by the fibre distance and contact point on the pressure plates.     

A 168-km ultra-long-range OTDR measurement at a wavelength of 1.55 μm

A Rayleigh backscattered signal and Fresnel reflection over a 167.6-km and a 251.2-km long pure silica-core fiber (PSF) with fiber loss 0.176 dB/km, and a 138.6-km and a 206.5-km long Ge-doped core dispersion shifted fiber (DSF) with fiber loss 0.218 dB/km have been observed with ultra-long-range optical time domain reflectometry (OTDR) using a 1.55-μm high-power semiconductor laser (LD) and InGaAs-APD with a low dark current at room temperature. The Rayleigh backscattered signal level and fiber loss are strongly dependent on the fiber dopant materials and fiber structural parameters. DSF gives a better SNR for short length fibers because the Rayleigh backscattered signal level is larger than PSF, but because the DSF loss is also larger, PSF gives a better SNR for fibers longer than the critical length. Accordingly, the dynamic range of OTDR in the different fiber types such as PSF and DSF becomes different. One-way backscattered dynamic ranges of 29.5 dB for the PSF and about 30.2 dB for the DSF at room temperature have been achieved.     

Fabrication of Ge Nano-Dot Heterojunction Phototransistors for Improved Light Detection at 1.55μm

Heterojunction phototransistors （HPTs） with several Ge/Si nano-dot layers as the absorption region are fabricated to obtain improved light detectivity at 1.55μm. The HPT detectors are of n-p-n type with ten layers of Ge（8ML ） /Si（45nm） incorporated in the base-collector junction and are grown by an ultrahigh-vacuum chemicalvapor-deposition system. The detectors are operated with normal incidence. Because of the good quality of the grown material and fabrication process, the dark current is only 0.71pA/μm^2 under 5 V bias and the breakdown voltage is over 20 V. Compared to the positive-intrinsic-negative （PIN） reference detector with the same absorption layer, the responsivity is improved over 17 times for normal incidence at 1.55μm.     

Transmission Characteristics of Several Kinds of Filters for WDM Optical Networking

１ＩｎｔｒｏｄｕｃｔｉｏｎＷａｖｅｌｅｎｇｔｈｄｉｖｉｓｉｏｎｍｕｌｔｉｐｌｅｘｉｎｇ（ＷＤＭ）ｉｓａｃｏｓｔｅｆｅｃｔｉｖｅｗａｙｔｏｍａｋｅｆｕｌｕｓｅｏｆｔｈｅｂｒｏａｄｂａｎｄｗｉｄｔｈｏｆｔｈｅｏｐｔｉｃａｌｆｉｂｅｒｗｈｅｎｔｈｅｔｒ...     

Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

We fabricate a Ga As-based In Ga As/In Ga As P multiple quantum wells(MQWs) laser at 1.55 μm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature In P layer and a thick In P buffer layer are grown on Ga As substrates by low-pressure metal organic chemical vapor deposition technology. Then, highquality MQWs laser structures are grown on the In P buffer layer. Under quasi-continuous wave(QCW) condition, a threshold current of 476 m A and slope efficiency of 0.15 m W/m A are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is1549.5 nm at 700 m A. The device is operating for more than 2000 h at room-temperature and 600 mA.     

Compensation-free, all-fiber-optic, two-photon endomicroscopy at 1.55 μm

We present an all-fiber-optic scanning multiphoton endomicroscope with 1.55 μm excitation without the need for prechirping femtosecond pulses before the endomicroscope. The system consists of a 1.55 μm femtosecond fiber laser, a customized double-clad fiber for light delivery and fluorescence collection, and a piezoelectric scan head. We demonstrate two-photon imaging of cultured cells and mouse tissue, both labeled with indocyanine green. Free-space multiphoton imaging with near-IR emission has previously shown benefits in reduced background fluorescence and lower attenuation for the fluorescence emission. For fiber-optic multiphoton imaging there is the additional advantage of using the soliton effect at the telecommunication wavelengths (1.3-1.6 μm) in fibers, permitting dispersion-compensation-free, small-footprint systems. We expect these advantages will help transition multiphoton endomicroscopy to the clinic.     

Design of polarization independent InGaAs/InGaAlAs coupled quantum well structure in 1.55 μm wavelength region

A novel polarization independent InGaAs/InGaAlAs quantum well (QW) structure in the 1.55 m wavelength region is proposed. A coupled QW structure with tensile strain in the QW and/or barrier region is considered for the reduction of the optical gain difference between TE and TM modes in the wide spectral range. A triple-coupled QW structure with alternative strain (tensile/compressive/tensile) is found to be the most effective in reducing the polarization gain difference. This is because the transition strength difference of each polarization is reduced by energy states coupling. The optimized triple-coupled QW structure shows polarization independence for wide carrier density and wavelength range, which is suitable for polarization independent operation of QW based semiconductor devices, such as semiconductor optical amplifiers.     

Single-mode transmitting modules for fiber-optics lines operating at wavelengths 1.3 and 1.55 μm

Optoelectronic sources for the 1.3- and 1.55-m bands have been developed on the basis of InGaAsP/InP heterostructures in the form of modules that include a Peltier microcooler, a temperature sensor, and a photodiode monitor. The properties of single-mode sources are presented and the technique of is discribed of coupling them to single-mode fibers using a taper and a microlens lightguide pigtail. Data on the influence of parasitic and some results on high-frequency modulation and information transmission are given.Optoelectronics Laboratory, Lebedev Physics Institute. Translated from Preprint No. 137 of the Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, 1989.     

Generation of a squeezed state at 1.55 μm with periodically poled LiNbO3

We report on the generation of a squeezing vacuum at 1.55 μm using an optical parametric amplifier based on periodically poled LiNbO 3.Using three specifically designed narrow linewidth mode cleaners as the spatial mode and noise filter of the laser at 1.55 μm and 775 nm,the squeezed vacuum of up to 3.0 dB below the shot noise level at 1.55 μm is experimentally obtained.This system is compatible with standard telecommunication optical fibers,and will be useful for continuous variable long-distance quantum communication and distributed quantum computing.