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R N Bhatt  Wan Xin 《Pramana》2002,58(2):271-283
We report results of a study of (integer) quantum Hall transitions in a single or multiple Landau levels for non-interacting electrons in disordered two-dimensional systems, obtained by projecting a tight-binding Hamiltonian to the corresponding magnetic subbands. In finite-size systems, we find that mesoscopic effects often dominate, leading to apparent non-universal scaling behavior in higher Landau levels. This is because localization length, which grows exponentially with Landau level index, exceeds the system sizes amenable to the numerical study at present. When band mixing between multiple Landau levels is present, mesoscopic effects cause a crossover from a sequence of quantum Hall transitions for weak disorder to classical behavior for strong disorder. This behavior may be of relevance to experimentally observed transitions between quantum Hall states and the insulating phase at low magnetic fields.  相似文献   

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Two‐dimensional interacting electron systems become strongly correlated if the electrons are subject to a perpendicular high magnetic field. After introducing the physics of the quantum Hall regime the incompressible many‐particle ground state and its excitations are studied in detail at fractional filling factors for spin‐polarized electrons. The spin degree of freedom whose importance was shown in recent experiments is considered by studying the thermodynamics at filling factor one and near one.  相似文献   

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The theory of the insulating state discriminates between insulators and metals by means of a localization tensor, which is finite in insulators and divergent in metals. In absence of time-reversal symmetry, this same tensor acquires an off-diagonal imaginary part, proportional to the dc transverse conductivity, leading to quantization of the latter in two-dimensional systems. I provide evidence that electron localization--in the above sense--is the common cause for both vanishing of the dc longitudinal conductivity and quantization of the transverse one in quantum Hall fluids.  相似文献   

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We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of the sample and allowed to mix in this split-gate geometry. Among the expected quantum Hall features, an unexpected additional plateau at 0.5h/e2 is observed. We propose that chaotic mixing of edge channels gives rise to the extra plateau.  相似文献   

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V. B. Shikin 《JETP Letters》2001,73(5):246-249
A generalization of the known theory describing the Hall channels with integer filling factors in inhomogeneous 2D electronic samples to the case of a stationary nonequilibrium state (with a nonzero Hall voltage V H across the 2D system) is proposed. For the central strip located near the extremum of the electron density, the theory predicts a change in its width and a shift of the whole strip from the equilibrium position as functions of V H . The theoretical results are used to interpret recent experiments on measuring the local electric fields along the Hall samples both in equilibrium conditions and in the presence of transport in the quantum Hall regime.  相似文献   

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We review recent investigations of the femtosecond non-linear optical response of the two-dimensional electron gas (2DEG) in the quantum Hall effect regime. We find that the time and frequency profile of the four-wave-mixing non-linear optical spectrum is strongly influenced by Coulomb correlations between the photoexcited electron-hole pairs and the 2DEG collective excitations. We discuss experimental and theoretical results showing non-Markovian memory effects in the polarization dephasing, and an optically induced time-dependent coupling between the two lowest Landau level magnetoexcitons.  相似文献   

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We study the electronic edge states of graphene in the quantum Hall regime. For non-interacting electrons, graphene supports both electron-like and hole-like edge states. We find there are half as many edge states of each type in the lowest Landau level compared to higher Landau levels, leading to a quantization of the Hall conductance that is shifted relative to standard two dimensional electron gases. We also consider the effect of quantum Hall ferromagnetism on this edge structure, and find an unusual Luttinger liquid at the edge in undoped graphene. This arises due to a domain wall that forms near the edge between partially spin-polarized and valley-polarized regions. The domain wall has a U(1) degree of freedom which generates both collective and charged gapless excitations, whose consequences for tunneling experiments are discussed.  相似文献   

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In this paper we show the electronic transport and the quantum phase transitions that characterize the quantum Hall regime in graphene placed on SiO(2) substrates at magnetic fields up to 28 T and temperatures down to 4 K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals intriguing non-universalities of the critical exponents of the plateau-insulator transition. These exponents depend on the type of disorder that governs the electrical transport and its characterization is important for the design and fabrication of novel graphene nano-devices.  相似文献   

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Using heuristic arguments and numerical simulations it is argued that the critical exponent nu describing the localization length divergence at the integer quantum-Hall transition is modified in the presence of spin-orbit scattering with short-range correlations. The exponent is very close to nu=4/3, the percolation correlation length exponent, consistent with the prediction of a semiclassical argument. In addition, a band of weakly localized states is conjectured.  相似文献   

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