Giant pressure effect in oxygen deficient YBa2Cu3Ox

The pressure effect on T_c of polycrystalline and single crystalline YBa₂Cu₃O_x investigated as a function of oxygen content x by ac-susceptibility measurements under helium pressure. In the overdoped region x> 6.93 the single crystals show a negative dT_c/d p, as expected from the charge transfer model. For optimally doped samples with x = 6.93 we find dT_c/d P = 0.4 K/GPa which points to pressure effects on T_c aside from charge transfer. In the underdoped region x < 6.93 the dT_c/d p values obtained from the experiment depend strongly on the storage temperature of the sample during the experiment. When the samples are stored at temperatures well below 240 K throughout the entire experiment including pressure application and pressure release, dT_c/d p increases to approx. 7 K/GPa at x = 6.7 but with a further decrease of the oxygen content the dT_c/d p drops to approx. 2 K/GPa at x = 6.4. These effects are intrinsic to the YBa₂Cu₃O_x structure and can be explained by considering the anisotropic structure of YBa₂Cu₃O_x. The decrease of the c-axis lattice parameter results in a charge transfer to the CuO₂-planes mainly [1], whereas the compression of the a- and b-axis lattice parameter is known to produce different pressure effects which are responsible for the peak in dT_c/d p at x = 6.7 [2]. When pressure is changed at room temperature oxygen ordering effects occur which cause a relaxation of T_c to the equilibrium value T_c(p) at this pressure with a time constant depending on the oxygen content x. A decrease x results in a peak effect in dT_c/d p at x = 6.7 again, which is enhanced to approx. 12 K/GPa. If the oxygen content is decreased further, dT_c/d p first drops to 5 K/GPa at x = 6.6, but the increases to values of more than 20 K/GPa for x < 6.42. These giant pressure effects at low oxygen contents are mainly caused by a reversible T_c increase (dT_c/d p)_O due to pressure induced oxygen ordering via oxygen motion between unit cells.     

Realization and properties of ramp-type YBa2Cu3O7−δ/Au/Nb junctions

All-thin-film ramp type Josephson junctions between YBa₂Cu₃O_7−δ and Nb have been fabricated. This procedure allows connections between high-T_c and low-T_c superconductors at different crystal sides of the high-T_c superconductor on one chip, which is of great interest for novel phase devices. A thin Au layer is incorporated as a chemical barrier to avoid oxygen transfer from the YBa₂Cu₃O_7−δ to the Nb. Critical current densities up to 600 A/cm² are obtained at T=4.2 K, with typical R_nA values of 0.8 μΩ cm². The variation of the magnetic field dependence of the critical current with the angle between the junction barrier and the YBa₂Cu₃O_7−δ crystal axes is explained by considering a predominant d_x²−y² order parameter symmetry of the YBa₂Cu₃O_7−δ. The successful fabrication of these junctions allows the implementation of novel superconducting electronics, such as complementary Josephson circuitry or proposed qubit concepts, using the unconventional order parameter symmetry of the high-T_c superconductor.     

Ramans study of Y1−xPrxBa2Cu3O7−δ and YB2Cu3−xZnxO7−δ single crystals

Single crystals with known T_c values of Y_1−xPr_xBa₂Cu₃O_7−δ (Y---Pr1:2:3) and YBa₂Cu_3−xZn_3−xZn_xO_7−δ (Y---Zn1:2:3) systems are studied by Raman measurements. The Raman spectra for (Y---Pr1:2:3) single crystals show that the frequencies of Ba and O_z modes increase as the Pr content increases. The results are consistent with the hole-localization scheme proposed for the suppression of superconductivity in the polycrystalline Y---Pr1:2:3 systems. On the other hand, in the Y---Zn1:2:3 system, all the Raman modes do not change in frequencies. However, the FWHM of the Cu(2) mode increases with the decrease of T_c, indicating strong scattering of charge carriers by the substituted Zn ions in the CuO₂ planes. The induced disorder in the CuO₂ planes may be related with suppression of T_c in the Y---Zn1:2:3 system. Thus, the suppression mechanism in the Y---Zn1:2:3 systems seems to be different from that in the Y---Pr1:2:3 systems.     

Effect of oxygen partial pressure on the lower solubility limit of Nd1+xBa2−xCu3O7

The lower solubility limits of Nd_1+xBa_2−xCu₃O₇ (Nd123ss) in 1 bar, 0.2 bar, 0.01 bar, and 0.001 bar oxygen partial pressure (P_O2) were studed by differential thermal analysis (DTA) and X-ray diffraction (XRD). Large relative changes in stability with decreasing P_O2 explain why sharp superconducting transitions can be achieved in P_O2 ≤ 0.01 bar while processing in 0.2 to 1 bar P_O2 tends to produce broad transitions. While the lower solubility limits in 0.01 bar and 0.001 bar P_O2 remain at x = 0.00, the solubility limits in 0.2 bar and 1 bar P_O2 show a narrowing with decreasing temperature. Because of the narrowing of the solubility range in 1 bar P_O2, oxygen annealing of Nd123 initially processed in low P_O2 will result in precipitation of second phases which act as flux pinning centers.     

Formation of Ca-doped YBa2Cu4O8 phase in thin films

Ca-doped YBa₂Cu₄O₈ (124) thin films are prepared on (100) SrTiO₃ substrates by annealing the amorphous films deposited using a pulsed laser deposition technique. The X-ray diffraction measurements show that the Ca-doped YBa₂Cu₄O₈ phase is formed by annealing below 800°C at a oxygen pressure of 1 atm. The 124 films have c-axis orientation normal to the substrates. As the Ca content increases, the proportion of the 123 impurity phase in the samples increases. The onset temperature of superconductivity of the Y(Ca)Ba₂Cu₄O₈ films increases from 79 K to 88 K with an increase Ca-substitution for 5 to 10% of Y.     

Superconductivity, Ca content and oxygen deficiency of Ga(Sr,Ca)2(Yb,Ca)Cu2O7

Superconducting transition temperature (T_c), Ca content and oxygen deficiency are studied on GaSr_1.8Ca_0.2Yb_1−xCa_xCu₂O₇ (x≤0.35). Superconducting samples with T_c=52 K are prepared after the annealing at 20 MPa of oxygen. The T_c is reduced through a slight oxygen loss accompanied by annealing in air above 650°C. The oxygen loss suggests the presence of short Cu–O chains in the GaO₄ slab. The formal valence of planar Cu required for the appearance of superconductivity depends on oxygen and Ca contents. The critical formal Cu valences are 2.105 and 2.125 for the samples annealed in air at 600°C and at 835°C, respectively. The values are higher than those of usual high-T_c superconductors. This can be explained by a high concentration of localized holes in the CuO₅ slab.     

Transient creep of YBa2Cu3O7−x superconductor

Rapid changes of oxygen partial pressure (P_O2) between 10³ and 2.1×10⁴ Pa have been carried out during steady-state plastic deformation of polycrystalline YBa₂Cu₃O_7−x (YBCO) at temperatures between 825 and 900°C. Transient creep was observed after such P_O2 changes. The analysis of these creep transients allowed the determination of the chemical diffusion coefficient for reequilibration, which is identical to that found from thermogravimetry and electrical conductivity experiments for oxygen vacancies.     

Magnetization study of polycrystalline YBa2AlxCu(3−x)O7−δ (x = 0.05, 0.10 and 0.20) compounds

Superconductivity in polycrystalline YBa₂Al_xCu_(3−x)O_7−δ materials was characterized by dynamic AC and quasistatic DC magnetometry. Intragranular persistent current density and low-loss intergranular critical current density were deduced using DC and AC techniques, respectively. Addition of aluminum produced modest increases in the intragranular persistent current for x < 0.2, but drastically reduced the intergranular critical current density for x = 0.2. The critical temperature T_c for superconductivity decreased only 4% for Al content up to x = 0.2.     

Crystal structure of YBa2Cu3O7−x thin films prepared by pulsed laser deposition with substrate bias voltage

The crystal structure of YBa₂Cu₃O_7−x thin films has been investigated by cross-section transmission electron microscopy. The samples were deposited on MgO (100) substrates at 670°C with substrate bias voltages of ±300 V. For the unbiased case, c-axis, a-axis and (103) oriented domains normal to the substrate surface were observed. In this film, the c-axis oriented domains are dominant, but the crystal often exhibits a longer c-lattice constant than that of the YBa₂Cu₃O_7−x system, so extra cationic layers are inserted in the YBa₂Cu₃O_7−x intrinsic stacking sequence. For the case of −300 V, rotated domains were dominant in the entire film; however, c-axis oriented domains also grow from the substrate surface. Small-angle semicoherent grain boundaries between them were observed. In the case of +300 V, all the grains show c-axis oriented YBa₂Cu₃O_7−x. The degree of preferential orientation of the grains is reduced at negative bias voltage of −300 V and the structure defects are reduced by applying a positive bias of +300 V.     

Intercalation thermodynamics and chemical diffusion of oxygen in the solid solution YBa2Cu3−xCoxO6+δ

The equilibrium oxygen content as a function of the temperature and oxygen pressure was measured for the solid solution YBa₂Cu_3−xCo_xO_6+δ, where x=0, 0.2, 0.4, 0.6, 0.8, by using coulometric titration in the temperature range 600–850°C and oxygen pressures between 10⁻⁵ and 1.0 atm. The change in the partial molar enthalpy and entropy of the intercalated oxygen was determined at different oxygen and cobalt contents. The oxygen chemical diffusion was studied by thermogravimetric relaxation in the oxygen-controlled atmosphere. The thermodynamic data were employed to determine how the chemical diffusion coefficient, the thermodynamic factor and the random-diffusion coefficient depend on oxygen content in specimens with different cobalt concentration. The oxygen intercalation thermodynamics and diffusivity results provide evidence of ordering phenomena on a microscopic scale in the basal plane of the tetragonal solid solution YBa₂Cu_3−xCo_xO_6+δ. A model for the oxygen diffusion is suggested to explain the large difference between the random and tracer diffusion coefficients in YBa₂Cu₃O_6+δ     

Trapping mechanism of superconductivity suppression induced by Pr substitution in the Ho1−xPrxBa2Cu3O7−δ system

Pr concentration dependence of the superconducting transition temperature T_c in the Ho_1−xPr_xBa₂Cu₃O_7−δ system is determined from measurements of DC electrical resistance. This dependence coincides with that for the parallely studied Y_1−xPr_xBa₂Cu₃O_7−δ reference system. Both systems have the same value of the critical concentration x_c=0.58, in accordance with nearly equal ionic radii of Ho³⁺ and Y³⁺ ions. It has been shown that the T_c(x) curve can be described with a single mechanism based on a decreasing number of sheet holes trapped by Pr^IV-ions, if one takes also into account that the number of these ions changes with x.     

Synthesis of YBa2Cu3O7−x superconducting thin films on LaAlO3 by means of PAMOCVD

High-T_c superconducting thin films have been deposited in situ by means of a plasma assisted metal-organic chemical vapour deposition (PAMOCVD) process on LaAlO₃. An EMCORE high-speed rotating disc reactor was used to deposit the films at a substrate temperature of 600°C to 800°C. The system is equipped with a (remote) 120 W microwave plasma generator. The oxidising plasma gas is N₂O and/or O₂ while Ar was used as the inert carrier gas for the different metal-organics. The influence of different process parameters (such as the temperatures of the metal-organics, substrate temperature, and plasma gas composition) on the superconductive properties and on the morphology of the films was investigated. Surface morphology and composition were studied by SEM/EDX or EPMA, and AC susceptibility measurements were used to investigate the superconductive properties (T_c and J_c). X-ray diffraction measurements indicated that single-phase YBa₂Cu₃O_7−x films were epitaxially grown with the 00l orientation perpendicular to the substrate surface. The critical temperature (T_c) of the films is about 90 K and the critical current density (J_c) is higher than 10⁶ A/cm² at 77 K and zero field.     

Phase equilibria at low oxygen partial pressure in the Y---Ba---Cu---O system

The phase equilibria around YBa₂Cu₃O_7−x (123) and YBa₂Cu₄O₈ (124) phases at low oxygen partial pressure (1 atm) were investigated by X-ray diffraction and thermal analysis. The coexistence of 123 and 124 phase was confirmed under 1 atm oxygen pressure. By using the high temperature X-ray diffraction method, the univariant reaction YBa₂Cu₃O_7−x+Cu₂OY₂BaCu₂O₂+O₂ was identified. The oxygen partial pressure dependence of several univariant reactions has been investigated and the existence of two invariant reactions of L+O₂YBa₂Cu₃O_7−x+ BaCuO₂+CuO+Cu₂O and L+Y₂BaCuO₅+O₂YBa₂Cu₃O_7−x+CuO+Cu₂O was deduced to occur at 1103 K under 0.0032 atm O₂ and at 1143 K under 0.0085 atm O₂, respectively.     

Photocurrent in superconducting YBa2Cu3O7−x films induced by an infrared free electron laser

Since the discovery of high-temperature cuprate superconductors, there has been much intensive study about the mechanism of them. However, identifying the dynamical mechanism behind them remains one of the great challenges in condensed matter physics. We investigated the high-temperature YBa₂Cu₃O_7−x superconducting films by using a free electron laser (FEL). The method is a type of photoelectron spectroscopy called a free electron laser internal photoemission. The spectrum of the photocurrent induced by FEL was measured in the case of 15 K and 100 K. We estimated the superconductive gap energy of YBa₂Cu₃O_7−x by comparing the photocurrent spectrum of the superconductive state with that of non-superconductive state.     

Hole distribution and madelung energy in the high-Tc oxide superconductors

Evidence is presented that in high-T_c superconductors the electrostatic interaction as expressed by the Madelung energy is the key factor in determining the charge distribution and in particular the distribution of the holes between the CuO₂-planes and other structural subunits. Specifically, this explains the phase diagram (T_c as a function of oxygen content and oxidizing power) of cation-substituted YBa₂Cu₃O_6+y and the oxygen ordering in YBa₂Cu₃O_6.5. Moreover, we argue that the dependence of T_c on strontium content in La_2−xSr_xCuO₄ is similarly due to the fact that holes go into the (La,Sr)O-sheets as well as into the CuO₂-planes.     

Magnetic and transport properties of YBa2Cu3Oy superconductor foams

The recently reported superconducting YBa₂Cu₃O_y (Y123) foams are highly interesting and promising for variety of applications. In this report we present first magneto-transport measurements of the superconducting properties of these foams. The investigations reveal the superconducting properties being similar to those of bulk melt processed materials. The 123 foams reveal a T_c of 92 K and have a magnetization J_c of 40,000 A/cm² at 77 K and 0 T. The measurements of magnetic hysteresis versus field show a high anisotropy of the critical current density up to J_c^ab/J_c^c7.     

The nuclear contribution to the specific heat of single crystals of YBa2Cu3O7 and Bi2Sr2CaCu2O8

Specific heat data below 1 K of Bi₂Sr₂CaCu₂O₈ and YBa₂Cu₃O₇ are analyzed. For YBa₂Cu₃O₇ the nuclear specific heat, C_N, amounts to 38T⁻² μJ/mol K. C_N for Bi₂Sr₂CaCu₂O₈ exceeds that of YBa₂Cu₃O₇ by a factor of 15. The nuclear quadrupolar specific heat contribution alone is insufficient to explain the data for YBa₂Cu₃O₇, while lack of NQR data does not allow such a comparison in Bi₂Sr₂CaCu₂O₈ to be made. The contribution to C_N from nuclear spins coupled via the contact hyperfine interaction with correlated magnetic spins (in the CuO₂ plane) is derived as a function of the correlation length. This contribution can be treated independently from the quadrupolar term. We show that the excess specific heat in YBa₂Cu₃O₇ likely originates in a few percentage of an impurity (oxygen deficient) phase with a strong hyperfine field on the Cu nuclei.     

SiO2 passivation film effects on microwave characteristics of YBa2Cu3O7−x-based resonators

SiO₂ film coated as a passivation layer for YBa₂Cu₃O_7−x (YBCO)-based microwave devices is investigated by measuring the microwave characteristics of microstrip line resonators. The SiO₂ film is deposited with its 0.3 to 0.4 μm thickness by a sputtering method using Ar + 30%O₂ plasma. These deposition conditions do not degrade the microwave characteristics and the critical temperature (T_c). Next, the SiO₂ film coated resonators are compared with the uncoated ones for two kinds of degradation conditions: a 200°C annealing in air, and an exposure to air at 85°C and 85% RH (relative humidity). We find that the SiO₂ passivation film prevents the YBCO thin film from the surface degradation and reacting with water.     

Temperature dependence of the critical current in YBa2Cu3O7−δ and Bi2Sr2Ca1Cu2O8 Josephson junctions

We have studied the stationary Josephson effect on YBa₂Cu₃O_7−δ (T_c=90 K) and Bi₂Sr₂Ca₁Cu₂ O₈ (T_c=80 K and 87 K for two samples of different origin) ceramic based junctions. The temperature dependence of the critical current near T_c has been found as I_c≈(T_c-T) for the Y-Ba-Cu-O samples indicating that they should be classified as S-N-I-N-S type junctions. The I-V curves of the Bi-Sr-Ca-Cu samples show the typical behaviour of S-I-S structures. Using Ambegaokar-Baratoff's theory for Bi₂Sr₂Ca₁Cu₂O₈, the temperature dependence of the superconducting state gap Δ(T) was calculated and it was evaluated that 1.452Δ(0)/k_BT_c3.5.     

Suppression of antiferromagnetic spin fluctuation in Zn-substituted YBa2Cu3O7

We have prepared Zn-substituted YBa₂Cu_3−xZn_xO₇ (YBCO, x=0.0–0.09) and performed ^63,65Cu nuclear quadrupole resonance (NQR) measurements for the plane site at 300 and 100 K as a function of Zn concentration. The substitutional effects are observed in resonant frequencies and linewidths of spectra, and relaxation times as well as in the superconducting transition temperature. The spin–lattice relaxation rate 1/T₁ is reduced for the higher Zn concentration and the reduction is more significant at 100 K. The ratio of ^63,65Cu spin–lattice relaxation rates suggests that a magnetic contribution due to the antiferromagnetic spin fluctuation becomes weak as the Zn concentration increases. These effects confirm that the antiferromagnetic spin fluctuation of Cu 3d spins is suppressed by the Zn substitution due to the absence of local moment at the zinc site.