Highly Luminescent Material Based on Alq3:Ag Nanoparticles

Tris (8-hydroxyquinoline) aluminum (Alq₃) is an organic semiconductor molecule, widely used as an electron transport layer, light emitting layer in organic light-emitting diodes and a host for fluorescent and phosphorescent dyes. In this work thin films of pure and silver (Ag), cupper (Cu), terbium (Tb) doped Alq₃ nanoparticles were synthesized using the physical vapor condensation method. They were fabricated on glass substrates and characterized by X-ray diffraction, scanning electron microscope (SEM), energy dispersive spectroscopy, atomic force microscope (AFM), UV-visible absorption spectra and studied for their photoluminescence (PL) properties. SEM and AFM results show spherical nanoparticles with size around 70–80 nm. These nanoparticles have almost equal sizes and a homogeneous size distribution. The maximum absorption of Alq₃ nanoparticles is observed at 300 nm, while the surface plasmon resonant band of Ag doped sample appears at 450 nm. The PL emission spectra of Tb, Cu and Ag doped Alq₃ nanoparticles show a single broad band at around 515 nm, which is similar to that of the pure one, but with enhanced PL intensity. The sample doped with Ag at a concentration ratio of Alq₃:Ag?=?1:0.8 is found to have the highest PL intensity, which is around 2 times stronger than that of the pure one. This enhancement could be attributed to the surface plasmon resonance of Ag ions that might have increased the absorption and then the quantum yield. These remarkable result suggest that Alq₃ nanoparticles incorporated with Ag ions might be quite useful for future nano-optoelectronic devices.     

New method for determining refractive index and thickness of fluorescent thin films

The optical parameters of homogeneous, isotropic, and fluorescent thin films are determined by comparing measured with calculated angular intensity distributions of the s- and p-polarized light emitted into the substrate. The method also yields information about the multipole nature of the emitted radiation. The theory is presented for electric and magnetic dipole transitions. For extremely thin layers of optical thickness n₀d₀ ? λ/8 (where λ is the emission wavelength) analytic expressions for the angular intensity distributions are given. For between 25–30 nm thick evaporated layers of an europium-benzoyltrifluoro-acetone- chelate the refractive index was determined to be n₀ = 1.57 at λ = 612 nm. The fluorescent light emitted by these layers in an about 6 nm wide band centered at λ = 612 nm is emitted by randomly oriented electric dipoles.     

Intensity of visible and IR emission of intracenter 4<Emphasis Type="Italic">f</Emphasis> transitions of RE ions in Er- and Tm-doped ZnO films with additional Ag,Li, and N impurities

The use of Ag impurity in Er-doped ZnO films deposited by AC magnetron sputtering with a low growth rate has increased the emission intensity at λ = 1535–1540 nm. An increase in the deposition rate and in the temperature of substrates, as well as the use of Li and N⁺ impurities, led to a considerable increase in the intensity of the line with λ = 376–379 nm in the case of doping with rare-earth ions (Er, Tm), which makes it possible to use this semiconductor for creation of devices for the short-wavelength spectral region. Introduction of additional impurities in Er-doped ZnO films deposited on bulk ZnO crystals with increasing deposition rate and temperature caused an increase in the intensity of the line with λ = 1535–1540 nm. The photoluminescence spectra of ZnO films doped with Tm (ZnO<Tm>) exhibited intense emission of lines with λ_max = 377 nm.     

Structural investigations of synthetic ferrihydrite nanoparticles doped with Si

X-ray diffraction (XRD), transmission electron microscopy (TEM), and photoacoustic/Fourier transform infrared spectroscopy (PA/FTIR) are employed to monitor the changes in the structural aspects of two-line ferrihydrite (FHYD) nanoparticles doped with silica viz. Si_xFe_1−xOOH·nH₂O for x=0, 0.02, 0.05, 0.10, 0.15, 0.20, 0.26, 0.40 and 0.50. In XRD, crystallinity decreases and d-spacings increase with increase in x. TEM studies show that the particle size increases systematically with increase in x, from 3.7 nm for x=0 to 5.7 nm for x=0.50. In PA/FTIR, two new bands appear, band F near 3700 cm⁻¹ identified with the surface Si-O-H group and band A near 900 cm⁻¹ identified with Si-O-Fe group, which shifts to higher wavenumbers with increase in x. These results are used to propose a model in which doped Si⁴⁺ ions do not displace Fe³⁺ ions but are chemisorbed on the FHYD surface making a shell of silica for higher doping. This model is consistent with the reported changes in the magnetic properties of FHYD with Si doping.     

Formation of sub-surface silver nanoparticles in silver-doped sodium–lead–germanate glass

The formation of silver nanoparticles in 60GeO₂–20PbO–20Na₂O bulk glass doped with 0.15 wt% of Ag has been studied by optical methods in the near ultraviolet-to-near infrared and mid-infrared ranges. A clear optical absorption band, which grows when increasing the annealing temperature, is observed around 460 nm, as a consequence of the surface plasmon resonance in the Ag nanoparticles. From the simultaneous analysis of optical transmittance and spectroscopic ellipsometry spectra in the near ultraviolet-to-near infrared range, it is demonstrated that the nanoparticles are surprisingly formed only in a thin layer (some tens of nm thick) underneath the sample surfaces. The potential of such a simultaneous optical analysis for determining the localization of the nanoparticles in glasses of any nature is underlined. Based on the results of a complementary mid-infrared spectroscopy characterization, the processes involved in silver migration to the surfaces and further aggregation to form nanoparticles are discussed.     

Effect of nanoparticle size on magnetic damping parameter in Co92Zr8 soft magnetic films

Co₉₂Zr₈(50 nm)/Ag(x) soft magnetic films have been prepared on Si (111) substrates by oblique sputtering at 45°. Nanoparticle size of Co₉₂Zr₈ soft magnetic films can be tuned by thickening Ag buffer layer from 9 nm to 96 nm. The static and dynamic magnetic properties show great dependence on Ag buffer layer thickness. The coercivity and effective damping parameter of Co₉₂Zr₈ films increase with thickening Ag buffer layer. The intrinsic and extrinsic parts of damping were extracted from the effective damping parameter. For x=96 nm film, the extrinsic damping parameter is 0.028, which is significantly larger than 0.004 for x=9 nm film. The origin of the enhancement of extrinsic damping can be explained by increased inhomogeneity of anisotropy. Therefore, it is an effective method to tailor magnetic damping parameter of thin magnetic films, which is desirable for high frequency application.     

Time resolved luminescence of CdS at high excitation

We report a study at low temperature of the time resolved luminescence of CdS, excited by two photon absorption. Concerning the so called EHP-LO and P bands, we confirm our results previously obtained on CdSe[1, 2]. (a) At high excitation a broad band (peak position at λ > 495 nm) occurs due to radiative recombination in an electron hole plasma, assisted by the emission of one LO phonon. (b) The simultaneous kinetics of the P line (λ ? 490.5 nm) and A-LO line (λ ? 492.5 nm) are conflicting with the interpretation of the P line as resulting of radiative exciton-exciton collisions. We interpret the P line as due to biexciton recombination.We have studied the luminescence in the (I₂-I₁) region (486nm < λ < 490nm) at low excitation. We observe clearly the following, (a) A broad band (488 nm < λ < 490.5 nm) which corresponds to the gain observed in previous experiments of pulse and probe spectroscopy and interpreted as direct recombination in an electron hole liquid (EHL). (b) After the disappearance of the EHL band, one single line (M_D), which shifts continuously towards the I₂ position during the time resolved kinetics. We suggest it to be connected with the high excitation effect on donor impurities (bound polyexcitons).     

Photoinduced transformations in a thin-film waveguide AgCl-Ag composition under a green (532 nm) laser beam

A linearly polarized (E ₀) laser beam (λ = 532 nm) causes photoinduced transformations in an AgCl-Ag composition consisting of a thin waveguide AgCl film on glass covered by a layer of Ag nanoparticles. Before the illumination the sample exhibits an absorption band due to localized plasmons in nanoparticles. The illumination excites plasmons and leads to scattering of waveguide TE₀ modes. The interference of modes with the incident light beam leads to the development of a periodic structure, the lines of which are formed by Ag particles and directed along E ₀. The measured structure period coincides with the result of calculation based on solving the dispersion equation for the TE₀-mode. Measurement of absorption in the E ‖ E ₀ polarization reveals dichroism and a spectral hole (at λ ≈ nm). It is shown that the structures formed remain on the substrate after removing AgCl in a fixing agent. The dichroism value and dispersion change after fixing. The character of dichroism prior to fixing is recovered after depositing an AgCl layer (with the parameters retained) on the fixed film.     

Organic polymer p-n heterostructures for optoelectronics

The photovoltaic effect due to the photogeneration of charge carriers at the interface in organic polymeric p-n-heterostructures based on the developed composites with hole (doped polyimides, conjugated polymers) and electron (doped polyetherimides and carbazolyl-containing polymers) conduction was observed and studied. The best performance was observed for heterostructures with diffuse and developed (bulk) interface. The maximum energy conversion efficiency was found to be 0.5% at λ = 400–650 nm. Components with enhanced photo and thermal stability were used. A weak photovoltaic effect was observed for heterostructures based on conjugated polymers (with a sharp interface). In this case, the rectification (diode) effect was observed for both dark current and photocurrent due to dark and photo injection of carriers from the electrodes at bias voltages across the cell above the injection threshold (V > V _i ). This conclusion is supported by the observation of recombination electroluminescence of the dopant in the n-layer, indicating a full or partial recombination of carriers at the interface. At V < V _i , photocurrent under reverse bias (+A1, ?ITO) is significantly higher than that under forward bias due to an efficient photogeneration of carriers at the interface and separate transport thereof. A sensitivity of about 100 mA/W at λ = 400–500 nm was reached.     

Absorption Spectrum of Manganese Formate Dihydrate at Liquid Nitrogen Temperature

The absorption spectrum of manganese formate dihy-drate has been studied at liquid nitrogen temperature (80 K) in the region λ 650 nm to 300 nm. Three bands of the spectrum resolved themselves exhibiting fine structure. The splitting of the ⁴E_g (G) band is explained as due to exciton-magnon interaction. Weak bands on either side of ⁴A_1g (G) band are assigned to phonon progressions with = 0.12 kK. The fine structure of the ⁴T_2g (D) band is explained as due to spin-orbit interaction. The observed band positions are fitted to four parameters B, C, ηq and α the best fit being obtained with B = 0.82 kK; C = 3.02 kK; Dq = 0.81 kK; α = 0.076 kK.     

Dependence of the cesium absorption D1 linewidth on the thickness of atomic vapor column

A new nanocell has been elaborated, where the thickness of the atomic vapor column varies smoothly in the range L = 350–5100 nm. The cell allows studying the behavior of the resonance absorption at the D₁ line of cesium atoms by varying the thickness from L = λ / 2 to L = 5 λ with the step λ / 2 (λ being the resonant wavelength of the laser, 894 nm) and the laser intensity. It is shown that at low laser intensities a narrowing of the resonance absorption spectrum is observed for L = (2n + 1)λ/2 (with an integer n) up to L = (7/2)λ, whereas for L = nλ the spectrum broadens. The developed theoretical model well describes the experiment.     

EPR, luminescence and IR studies of Mn activated ZnGa2O4 phosphor

Electron paramagnetic resonance (EPR), luminescence and infrared spectra of Mn²⁺ ions doped in zinc gallate (ZnGa₂O₄) powder phosphor have been studied. The EPR spectra have been recorded for zinc gallate phosphor doped with different concentrations of Mn²⁺ ions. The EPR spectra exhibit characteristic spectrum of Mn²⁺ ions (S=I=5/2) with a sextet hyperfine pattern, centered at g_eff=2.00. At higher concentrations of Mn²⁺ ions, the intensity of the resonance signals decreases. The number of spins participating in the resonance has been measured as a function of temperature and the activation energy (E_a) is calculated. The EPR spectra of ZnGa₂O₄: Mn²⁺ have been recorded at various temperatures. From the EPR data, the paramagnetic susceptibility (χ) at various temperatures, the Curie constant (C) and the Curie temperature (θ) have been evaluated. The emission spectrum of ZnGa₂O₄: Mn²⁺ (0.08 mol%) exhibits two bands centered at 468 and 502 nm. The band observed at 502 nm is attributed to ⁴T₁→⁶A₁ transition of Mn²⁺ ions. The band observed at 468 nm is attributed to the trap-state transitions. The excitation spectrum exhibits two bands centered at 228 and 280 nm. The strong band at 228 nm is attributed to host-lattice absorption and the weak band at 280 nm is attributed to the charge-transfer absorption or d⁵→d⁴s transition band. The observed bands in the FT-IR spectrum are assigned to the stretching vibrations of M-O groups at octahedral and tetrahedral sites.     

SiO2 nanoparticles doped nematic liquid crystal system: An experimental investigation on optical and dielectric properties

The aim of this work is to investigate the effect of silica (SiO₂) nanoparticles (NPs) on optical and dielectric properties of BBEA nematic liquid crystal (NLC). For optical analysis the photoluminescence (PL) and UV-absorbance experiments have been performed. The doped system is showing enhancement in the intensity of photoluminescence with varying concentration of nanoparticles. A red shift is observed in the emission spectra of NLC doped with silica nanoparticles. The PL emission peak of NLC is observed at 377.3 nm which is shifted to 379.7 nm in the presence of silica nanoparticles. We have also observed the enhancement in the value of UV absorption for silica doped systems in comparison to the pure system. Energy band gap of pure and doped systems has been calculated and it is found that the energy band gap is decreasing with concentration which is a promising result of this study. The dielectric parameters of the pure and doped NLC systems were carried out as a function of frequency and temperature. Different dielectric parameters such as relative permittivity, loss factor and dielectric conductivity have been measured. The pure and silica nanoparticles doped systems has shown decreased value of dielectric permittivity and loss factor at lower frequency region and at higher frequency regions these values became constant. The value of relative permittivity also decreases with concentration. The increased value of a.c. conductivity for doped systems can be utilized in device designing. Moreover, the temperature dependence of the birefringence (Δn) was determined from the transmitted intensity of light for pure and doped systems and the improvement in its value for both composites has been observed. Improved value of birefringence has pronounced applications in optical devices.     

Synthesis and luminescence properties of mesophase silica thin films doped with in-situ formed europium complex

Mesophase silica thin film doped with in-situ formed ternary Eu complex was synthesized by adding ligands (DBM=dibenzoylmethane, phen=1,10-phenanthroline), Eu ions (EuCl₃·6H₂O), and Pluronic P123 triblock copolymer into hydrolyzed tetramethoxy-silane (TMOS). The structure of this inorganic/organic film was characterized as a 2d-hexagonal structure by X-ray diffraction (XRD) and TEM analysis. The excitation spectra (λ_em=612 nm) and emission spectra (λ_ex=325 nm) indicated that the ternary complex, Eu-DBM-phen, was formed in-situ during the formation of the film. The mesophase silica thin film doped with the in-situ formed Eu complex showed a higher quantum efficiency compared to a pure Eu(DBM)₃phen complex and a mesophase silica thin film doped with in-situ formed binary Eu-phen complex.     

Enhanced luminescence and degradation resistance in Tb modified Yttrium Borate core-nano silica shell phosphor under UV and VUV excitation

Composition variation in optimized solid state reaction conditions has been done to achieve intense green emission in YTb_xBO₃ phosphor under UV and VUV (147 nm resonant Xe*, 172 nm Xe₂* excimer band) excitation. Inert interface layer created by fabricating a shell of silica nanoparticles over individual phosphor grain protected the phosphor surface from deterioration and oxidation of luminescent ion (Tb³⁺) thus completely arresting phosphor degradation. At optimum Tb content of 20 mol%, integrated photoluminescence intensity of developed YTb_xBO₃ phosphor is four times higher than commercial green YBT. With short decay time of 4 ms, YTb_xBO₃ core-nano silica shell green emitting phosphor has great application potential in PDP panel and phosphor coated Xe lamps.     

Optical properties of sol-gel fabricated Mn/SiO2 nanocomposites: Observation of surface plasmon resonance in Mn nanoparticles

Manganese nanoparticles were grown in silica glass and silica film on silicon substrate by annealing of the sol-gel prepared porous silicate matrices doped with manganese nitrate. Annealing of doped porous silicate matrices was performed at various conditions that allowed to obtain the nanocomposite glasses with various content of metallic Mn. TEM of Mn/SiO₂ glass indicates the bimodal size distribution of Mn nanoparticles with mean sizes of 10.5 nm and 21 nm. The absorption and photoluminescence spectra of Mn/SiO₂ glasses were measured. In the absorption spectra at 300 nm (4.13 eV) we observed the band attributed to the surface plasmon resonance in Mn nanoparticles. The spectra proved the creation of Mn²⁺ and Mn³⁺ ions in silica glass as well. The absorption spectra of Mn/SiO₂ glasses annealed in air prove the creation of manganese oxide Mn₂O₃. The measured reflection spectra of Mn/SiO₂ film manifest at 240-310 nm the peculiarity attributed to surface plasmons in Mn nanoparticles.     

Synthesis, structural and optical characterization of nanocrystalline ZnS:Cu embedded in silica matrix

The synthesis of Cu doped ZnS nanoparticles inside the pore of an inorganic silica gel matrix is presented. The synthesized nanoparticles were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). X-ray diffraction pattern reveals the crystalline wurtzite phase of ZnS. The existence of silica gel in modeling morphologies of the nanoparticles was characterized using Fourier transform infrared (FTIR) spectrometer. Thickness of the silica shell was also calculated. UV- absorption spectrum shows the appearance of an absorption peak at 273 nm which confirms the blue shift as compared to that of bulk ZnS. The photoluminescence (PL) emission spectrum of the sample showed a broad band in the range 465-510 nm due to the transition from the conduction band edge of ZnS nanocrystals to the acceptor like t₂ state of Cu.     

Ag掺杂p型ZnO薄膜及其光电性能研究

采用超声喷雾热分解法在石英衬底上以醋酸锌水溶液为前驱体,以硝酸银水溶液为Ag掺杂源生长了Ag掺杂ZnO(ZnO：Ag)薄膜.研究了衬底温度对所得ZnO：Ag薄膜的晶体结构、电学和光学性质的影响规律.所得ZnO：Ag薄膜结构良好,在室温光致发光谱中检测到很强的近带边紫外发光峰,透射光谱中观测到非常陡峭的紫外吸收截止边和较高的可见光区透过率,表明薄膜具有较高的晶体质量与较好的光学特性.霍尔效应测试表明,在500℃下获得了p型导电的ZnO：Ag薄膜,载流子浓度为5.30×10¹⁵cm关键词： ZnO：Ag薄膜 p型掺杂 超声喷雾热分解 霍尔效应     

Adsorption and reaction of bromine with Ag(110): A photoemission study

The adsorption of bromine on the (110) surface of silver has been studied by ultraviolet (hυ = 21.2 and 40.8 eV) photoelectron spectroscopy in the temperature range of 100–300 K. Four different adsorption and reaction states could be detected. For fractional monolayer coverages Br₂ adsorbs dissociatively on the Ag(110) surface. The chemisorption of bromide leads to new emission features at about 3 and 5.2 eV below E_F, which are assigned as occupied antibonding structures (3 eV) and as bonding Br4p_{x, y} orbitals (5.2 eV). At 100 K, further bromide adsorption leads to the formation of an AgBr layer with molecular adsorbed bromine on top of this corrosion layer. The He I spectrum is dominated by structures at 3.5, 5.8 and 7.5 eV which are due to emission from the π_g, π_u and σ_g molecular orbitals of Br₂. The buildup of the AgBr layer is clearly demonstrated by desorbing the molecular bromine at about 150 K. The resulting spectrum of the AgBr layer shows peaks at 2.5 and 3.4 eV with p- and mixed-in d-character and peaks at 4.1, 5.2 and 6.1 eV which are primarily d-like. Heating of the AgBr layer up to 300 K results in a transformation from a 2D layer into a 3D agglomeration of larger AgBr clusters on top of a Br/Ag(110) chemisorption layer.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.