Raman spectroscopy of resonance exciton tunneling in GaAs/AlAs superlattices in electric fields

Optical-resonance-Raman scattering by acoustic phonons is used to study the effect of an electric field on the state of excitons in GaAs/AlAs superlattices. When the energy of the exciting photon coincides with the energy of an exciton bound to Wannier-Stark states of a heavy hole and electron with Δn=0,±1, the acoustic Raman scattering is enhanced. Oscillations in the intensity of the Raman spectrum in the electric field are explained by resonance delocalization of the exciton ground state as it interacts with Wannier-Stark states of neighboring quantum wells or with Wannier-Stark states of a higher electron miniband. Fiz. Tverd. Tela (St. Petersburg) 40, 827–829 (May 1998)     

A study of the GaAs/AlAs(001) superlattice spectrum within the abrupt- and smooth-boundary models

The electron states and miniband spectra of (GaAs) _m (AlAs) _n (001) superlattices related to the Г- and X _z -valleys of conduction bands of bulk GaAs and AlAs crystals are considered within the framework of simplified abrupt- and smooth-heteroboundary models. The models are constructed on the basis of calculations made by the pseudopotential method. It is shown that the proposed models describe the results of the corresponding exact calculations in the approximation of the abrupt and smooth boundaries reasonably well. It is found that the difference between the smooth-boundary and abrupt-boundary models becomes pronounced in the case of superlattices with thin layers, where this difference results in a qualitatively different dispersion of lower minibands.     

Direct and spatially indirect excitons in GaAs/AlGaAs superlattices in strong magnetic fields

Luminescence and luminescence excitation spectra are used to study the energy spectrum and binding energies of direct and spatially indirect excitons in GaAs/AlaAs superlattices, with different widths of the electron and hole minibands, located in a high magnetic field perpendicular to the heterolayers. It is found that the ground state of the indirect excitons formed by electrons and holes and spatially separated between neighboring quantum wells lies between the ls ground state of the direct excitons and the continuum threshold for dissociated exciton states in the minibands. Indirect excitons in superlattices have a significant oscillator strength when the binding energy of the exciton exceeds the order of the width of the resulting miniband. The behavior of the binding energy of direct and indirect heavy hole excitons during changes in the tunneling coupling between the quantum wells is established. It is shown that a strong magnetic field, which intensifies the Coulomb interaction between the electron and hole in an exciton, weakens the bond in a system of symmetrically bound quantum wells. The spatially indirect excitons studied here are analogous to first order Wannier-Stark localized excitons in superlattices with inclined bands (when an electrical bias is applied), but in the present case the localization is of purely Coulomb origin. Zh. éksp. Teor. Fiz. 112, 1106–1118 (September 1997)     

Multiple-quantum radio-frequency spectroscopy of atoms: Application to the metrology of geomagnetic fields

The evolution of the radio-frequency magnetic resonance spectrum of optically oriented potassium atoms in terrestrial magnetic fields as a function of the amplitude of the alternating magnetic field H ₁ is investigated theoretically and experimentally. It is shown that among the set of observed n-quantum resonances which satisfy the selection rules ΔF=0 and Δm _F±n (n is an integer), there is one resonance with the highest multiplicity n=4 (m _F=2⇔m _F=−2), which has exceptional properties. These qualities make this resonance a candidate for use in a weak-field quantum magnetometer with record-high characteristics. A preliminary investigation of an experimental model of a four-quantum potassium magnetometer is performed. Zh. Tekh. Fiz. 69, 27–30 (September 1999)     

Valence band structure of fractional Wannier-Stark effect shallow InGaAs/InGaAs superlattices

Strain induced effects on the valence band structure of In_xGa_1-xAS/In_yGA_1-yAs (x ≈ 0.47, y ≈ 0.6) shallow superlattices are analyzed by optical spectroscopy. The formation of minibands and the spatially indirect nature of the electron-light-hole transition are observed by photocurrent experiments. Field induced spectral changes of the photocurrent spectra are attributed to Wannier-Stark localization. Heavy hole related fan diagrams are derived for all samples. In contrast, the electron-light-hole Wannier-Stark ladder appears to be very sensitive to material parameters. These results are compared with theoretical calculations of the excitonic absorption coefficient.     

Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field

The photocurrent was measured as a function of the external electric field in short-period AlAs/GaAs superlattices for various photon energies. Transport resonances, whose positions do not depend on the photon energy, were observed in these dependences together with optical resonances due to interband transitions in Wannier-Stark levels. It is shown that the transport resonances are due to tunneling of photoelectrons from the p-GaAs contact region into the first level in GaAs wells located 2–5 lattice periods from the contact layer. Fiz. Tverd. Tela (St. Petersburg) 41, 159–164 (January 1999)     

Secondary ion emission from bismuth under bombardment with Bi m ? and Au m ? cluster ions

The mass spectra of secondary cluster ions Bi _n ⁺ (n = 1–9) from bismuth sputtered by (6–21) keV Au _m ⁻ (m = 1–9) and Bi _m ⁻ (m = 1–5) cluster ions have been investigated. New features of manifestation of dense nonlinear cascades and thermal spikes have been revealed. It is concluded that the thermal spike regime makes a significant contribution to the mechanism of formation of small cluster ions, containing up to seven atoms for a bismuth target.     

Fragmentation of sputtered Si<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>O<Stack><Subscript><Emphasis Type="Italic">m</Emphasis></Subscript><Superscript>+</Superscript></Stack> clusters: Release kinetic and dissociation energies

The spectra of kinetic energies of positive Si _n O _m ⁺ cluster ions (n = 2–5, m = 2–7) have been measured using a double focusing ion microanalyzer with reverse geometry at instants 10⁻⁵ to 10⁻⁴ s after emission. The dissociation energies have been determined within the evaporative ensemble model and the theory of unimolecular decay reactions. The results obtained are compared with the binding energies of neutral Si _n O _m clusters.     

Resonance split of ballistic conductance peaks in electric and magnetic superlattices

Resonant peak splitting for ballistic conductance in finite electric superlattices (ES) and magnetic superlattices (MS) was investigated theoretically. It is shown that, for electron tunneling through the ES (MS) of identical n electric (magnetic) barriers, the resonance split of the conductance peak is (n–1)-fold; while for electron tunneling through the ES (MS) made of two different barriers, one resonant window of the former splits into two subwindows, within each of which the resonance split is (m–1)-fold, where m is the number of the renormalized building blocks consisting of two different barriers of the latter. Received 15 February 2000     

Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals

We report the development of a method for recording the low-temperature (T=6 K) near-IR inelastic light scattering spectra and the observation of electronic scattering on the transitions 1s _3/2(Γ₈) → 2s _3/2(Γ₈) between the ground and excited states of different shallow acceptor centers in a n-type semi-insulating crystal si-GaAs (n=1.0 × 10⁸ cm⁻³) and in a doped p-InP crystal (p=3.6×10¹⁷ cm⁻³). Moreover, a new line, associated with the transition 1s _3/2(Γ ₈) → 2p _3/2(Γ₈) and due to a dielectric local mode, recorded for the first time in the spectra of narrow-gap semiconductors, was found in the residual-frequency band in the p-InP spectrum between TO(Γ) and LO (Γ) phonons. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 5, 334–339 (10 March 1998)     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

EPR of trivalent iron ions in a LiCaAlF6 crystal

The orientational dependences of the EPR spectra of Fe³⁺-doped LiCaAlF₆ single crystals (space group P31c, Z=2), grown at the Laboratory of Magnetic Radio Spectroscopy at Kazan’ State University, have been investigated in detail. The spectrum is described by a trigonal spin Hamiltonian with the following parameters: B ₂₀=40.072×10⁻⁴ cm⁻¹, B ₄₀=−5.799×10⁻⁴ cm⁻¹, B ₄₃=−4.281×10⁻⁴ cm⁻¹, A _s=24.33±1, A _p=6.13±1, g _∥=g _⊥=2.00217±0.0003. A theoretical calculation of the hyperfine structure parameters shows that they are described quite well when allowance is made for the overlapping of the wave functions of the paramagnetic center and the ligands (F⁻). Fiz. Tverd. Tela (St. Petersburg) 39, 488–490 (March 1997)     

Infrared lattice-reflection spectroscopy of Zn1−x CdxSe epitaxial layers grown on a GaAs substrate by molecular-beam epitaxy

Results are presented of the first measurements of infrared reflection spectra of Zn_1−x Cd_xSe films (x=0–0.55; 1) grown on a GaAs substrate by molecular-beam epitaxy. It is shown by a mathematical analysis of the experimental spectra that the investigated Zn_1−x Cd_xSe alloy system manifests a unimodal rearrangement of its vibrational spectrum as the composition is varied. Fiz. Tverd. Tela (St. Petersburg) 41, 982–985 (June 1999)     

Excess 1/f noise in systems with an exponentially wide spectrum of resistances and dual universality of the percolation-like noise exponent

The excess 1/f noise in a random lattice with bond resistances r∼exp(−λx), where x is a random variable and λ≪1, is studied theoretically. It is shown that if the correlation function {δr ²}∼r r ^θ+2, then the relative spectral density of the noise in the system is expressed as C _e∼λ^m exp(−λ(1−p _c)), where p _c is the percolation threshold and m=νd (ν is the critical exponent of the correlation length and d is the dimensionality of the problem). It is hypothesized that the exponent m possesses a dual universality: It is independent of 1) the geometry of the lattice and 2) the θ-mechanism responsible for the generation of the local noise. Numerical modeling in a three-dimensional lattice gives m=52.3 for θ=1 and θ=0, in agreement with the hypothesis. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 8, 614–618 (25 April 1996)     

Effect of carbon ion bombardment and surface oxidation on the twinning rate of single-crystal bismuth

A study is made of the change in the dependences of the normal velocity of twinning boundaries on the magnitude of shear stresses in the twinning plane v _n =v _n (τ) in bismuth crystals owing to ion-cluster doping and oxidation of the irradiated surface. Irradiation was by 25 keV carbonions at a dose of 10¹⁷ ion/cm². Twinning of the crystals took place under pulsed loading conditions with pulse durations of 10⁻⁵−10⁻⁴ s and stress amplitudes of (0.2–2.0)×10³ g/mm³. Carbon ion bombardment of single-crystal bismuth causes a shift in the v _n =v _n (τ) curve toward lower stresses. An oxide film slows down the motion of twinning dislocations. Zh. Tekh. Fiz. 69, 130–131 (May 1999)     

Strain-induced photoreflectance spectra in the vicinity of the E 0 transition in GaAs/Si and InP/Si heterostructures

A study is reported of the structure of photoreflectance (PR) spectra in the vicinity of the E ₀ transition from thin (d=1–5 μm) n-GaAs and n-InP films (n=10¹⁶–10¹⁷ cm⁻³) grown epitaxially on Si(001) substrates. A quantitative analysis of the spectra involving multi-component fitting shows that the electronic optical transition from the {3/2;±1/2} subband provides a dominant contribution to the intermediate-field electromodulation component in both systems. The splitting observed in the GaAS/Si PR spectra near the main peak are accounted for not by the strain-induced valence-band splitting but rather by a spectral superposition of the intermediate-field component due to the {3/2;±1/2} subband with a low-energy excitonic component. The analytically established transition energy E ₀ ^3/2;±1/2 is used to calculate biaxial strains in epitaxial films. Fiz. Tverd. Tela (St. Petersburg) 41, 725–731 (April 1999)     

Quasi-long-range order in the random anisotropy Heisenberg model

The random field and random anisotropy N-vector models are studied with the functional renormalization group in 4−ε dimensions. The random anisotropy Heisenberg (N=3) model has a phase with an infinite correlation length at low temperatures and weak disorder. The correlation function of the magnetization obeys a power law 〈m(r ₁)m(r ₂)〉∼|r ₁−r ₂|^{− 0.62ε}. The magnetic susceptibility diverges at low fields as χ∼H ^−1+0.15ε. In the random field N-vector model the correlation length is finite at arbitrarily weak disorder for any N>3. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 130–135 (25 July 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Recurrence spectra of He atoms in strong external fields

1 Introduction The photo-absorption phenomenon of high Rydberg atoms in strong external fields has attracted much attention in recent years. The semiclassical closed-orbit theory[1,2] developed by Du and Delos has been extensively used to explain this phenomenon. This theory has successfully calculated and interpreted the photo-absorption spectra of H- in various external fields[3,4] and has been applied to describe the photo-excitation, wave packet dynamics of some atoms and molecules such…     

Monte-Carlo optimization of correlated helium wave function

A new type of correlated wave function for the normal helium is proposed in the form:ψ(r₁, r₂)=Σc _mφ_m withφ _m=exp]−α(r ₁+r ₂)]/(br ₁₂+a) ^m wherea, b, α are non-linear variational parameters. Optimizing these parameters by the Monte-Carlo technique, an energy eigen-value of −2.903645(a.u.) is obtained withonly three terms in the basis expansion alongwith satisfactory cusp condition, compared to the essentially exact non-relativistic value of −2.903724 as given by Freundet al (Phys. Rev. A29, 980 (1984)).     

Emission of quasi-thermal ions from a solid bombarded by cluster ions

Comparative studies of the emission of quasi-thermal atomic and cluster ions from V, Nb, Ta, Au, and In targets bombarded by cluster ions Au _m ⁻(m = 1–9), as well as from Si and Bi targets bombarded by cluster ions Au _m ⁻(m = 1–9) and Bi _m ⁻(m = 1–5), with energy E ₀ ranging from 6 to 21 keV are carried out. In the case of bombardment by heavy cluster ions, the fraction of the quasi-thermal component in the energy spectra of sputtered atomic ions reaches 50 (for V, In, and Au), 70 (Nb), or more than 90% (Ta). In addition, quasi-thermal ions play a considerable part in the emission of small cluster ions Au₂⁺, In₂⁺, In₃⁺, and Bi _n ⁺(n = 2–7). The results of the generalizing investigation favor the presence of thermal spike conditions at cluster bombardment and their appreciable contribution to the emission of atomic and small cluster ions.