Core-shell LaF<Subscript>3</Subscript>:Er,Yb nanocrystal doped sol–gel materials as waveguide amplifiers

The oleic acid (OA)-modified LaF₃:Er,Yb and LaF₃:Er,Yb–LaF₃ core-shell nanocrystals are synthesized. The lifetime values could be further improved by incorporating core-shell nanocrystals. A kind of sol–gel derived organic–inorganic hybrid material (SGHM) allows for 50 wt.% or even more of both the two nanocrystals in the matrix, and we give the explanation from scattering analysis. It’s precisely because we use the erbium nanocrystals rather than erbium organic complexes, and avoid the undesirable luminescence quenching by Er–Er clustering with a high Er³⁺ concentration. LaF₃:Er,Yb–LaF₃/SGHM transparent films and optical waveguides are also fabricated. The nanocomposite films show strong 1550 nm luminescence intensity under the excitation of 980 nm after heat treatment below 150 °C and the full-width-at-half-maximum is about 51 nm. The loss and optical gain of the waveguide are measured. A relative gain of about 3.5 dB is measured at 1550 nm in a 1.7 cm long waveguide.     

Photophysical Properties of Lanthanide Hybrids Covalently Bonded To Functionalized MCM-41 by Modified Aromatic Carboxylic Acids

MCM-41 mesoporous silica has been functionalized with aromatic carboxylic acids salicylic acid (Sal) and 2-hydroxyl-3-methylbenzoic acid (HMBA) through co-condensation approach of tetraethoxysilane (TEOS) in the presence of the cetyltrimethylammonium bromide (CTAB) surfactant as a template. Organic ligands salicylic acid or 2-hydroxyl-3-methylbenzoic acid grafted to the coupling agent 3-(triethoxysilyl)-propyl isocyanate (TEPIC) was used as the precursor for the preparation of an organic–inorganic hybrid materials. Novel organic–inorganic mesoporous luminescent hybrid containing Ln³⁺ (Tb³⁺, Eu³⁺) complexes covalently attached to the functionalized ordered mesoporous MCM-41, which were designated as Ln-Sal-MCM-41 and Ln-HMBA-MCM-41, respectively, were obtained by sol–gel process. The luminescence properties of these resulting materials were characterized in detail, and the results reveal that luminescent mesoporous materials have high surface area, uniformity in the mesopore structure and good crystallinity. Moreover, the mesoporous material covalently bonded Tb³⁺ complex (Tb-Sal-MCM-41 and Tb-HMBA-MCM-41) exhibit the stronger characteristic emission of Tb³⁺ and longer lifetime than the corresponding Eu-containg materials Eu-Sal-MCM-41 and Eu-HMBA-MCM-41 due to the triplet state energy of modified organic ligands Sal-TEPIC and HMBA-TEPIC match with the emissive energy level of Tb³⁺ very well. In addition, the luminescence lifetime and emission quantum efficiency of ⁵D₀ Eu³⁺ excited state also indicates the efficient intramolecular energy transfer process in Tb-SAL-MCM-41 and Tb-HMBA-MCM-41.     

Spectral broadening and luminescence quenching of 1.53 μm emission in Er-doped zinc tellurite glass

The emission spectra and the lifetime of the lasing transition ⁴I_13/2→⁴I_15/2 in Er³⁺-doped TeO₂-ZnO binary glass have been studied. The investigation includes Raman scattering spectroscopy as well as optical absorption, luminescence, and lifetime measurements techniques. The influence of erbium concentration on the line-shape of this electron transition has been analyzed. It was observed that the increasing of Er³⁺ ion concentration, in the 0.2-4 mol% range, results in a structural changes and a significant spectral broadening of the 1.53 μm emission band. Reabsorption has been evoked to explain the broadening of the ⁴I_13/2→⁴I_15/2 emission line. In the paper, is also reported the effect of the erbium content on the emission intensity of the ⁴I_13/2→⁴I_15/2 transition as well as on the lifetime of the ⁴I_13/2 level. Based on the electrical-dipole interaction theory, the luminescence concentration quenching mechanism by hydroxyl groups is analyzed. The data suggest that <10% of hydroxyl groups are coupled to erbium ions in the zinc tellurite glass network.     

Up-conversion luminescence saturation under pulsed excitation of erbium-doped, SiO2–TiO2 sol–gel powders

The intensity of erbium up-conversion luminescence could be limited by a saturation effect due to increased pump power. We studied the luminescence saturation of the 550 nm emission on erbium-doped, SiO₂–TiO₂ sol–gel powders under pulsed excitation at 979 and 1532 nm. From the latter, the up-converted luminescence intensity decreased with increasing excitation power, whereas no saturation was observed at 979 nm excitation. We proposed that the saturation effect is determined by the pump power, the erbium content and the lifetime of the corresponding first excited states at different pumping schemes.     

Excitation mechanisms and localization sites of erbium-doped porous silicon

Porous silicon (PS) is doped with erbium by electrochemical anodisation. The penetration of erbium into the PS layer is confirmed by Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray (EDX) measurements. Efficient green and infrared emissions were observed at room temperature. The investigations are focused on the evolutions versus temperature and pump intensity of the green photoluminescence (PL) corresponding to the ⁴S_3/2 → ⁴I_15/2 transition. It was found that an erbium related level defect can be involved on the excitation and emission processes of erbium. Pump intensity dependent PL studies revealed that for the electrochemical incorporation, most of the Er³⁺ ions are localized inside the Si nanocrystallites and not in stoichiometric SiO₂. The optical cross-section is close to that of erbium in Si nanocrystallites.     

Time-resolved luminescence spectroscopy of pure and doped with Ce3+ ions SrAlF5 crystals

The results of a study of time-resolved photoluminescence (PL) and energy transfer in both pure and doped with Ce³⁺ ions SrAlF₅ (SAF) single crystals are presented. The time-resolved and steady-state PL spectra in the energy range of 1.5–6.0 eV, the PL excitation spectra and the reflectivity in the energy range of 3.7–21 eV, as well as the PL decay kinetics were measured at 8.8 and 295 K. The lattice defects were revealed in the low temperature PL spectra (emission bands at 2.9 and 4.5 eV) in the undoped SAF crystals. The luminescence spectra of the doped Ce³⁺:SAF crystals demonstrate a new selective emission bands in the range of 3.7–4.5 eV with the exponential decay kinetics (τ ≈ 60 ns at X-ray excitation). These bands correspond to the d-f transitions in Ce³⁺ ions, which occupy nonequivalent sites in the crystal lattice.     

Optical spectra and excited state relaxation dynamics of Sm<Superscript>3+</Superscript> in Gd<Subscript>2</Subscript>SiO<Subscript>5</Subscript> single crystal

Single crystals of gadolinium orthosilicate Gd₂SiO₅ containing 0.5 at% and 5 at% of Sm³⁺ were grown by the Czochralski method. Optical absorption spectra, luminescence spectra and luminescence decay curves were recorded for these systems at 10 K and at room temperature. Comparison of optical spectra recorded in polarized light revealed that the anisotropy of this optically biaxial host affects the intensity distribution within absorption and emission bands related to transitions between multiplets rather than the overall band intensity. It has been found that among four bands of luminescence related to the ⁴G_5/2→⁶H_J (J=5/2–11/2) transitions of Sm³⁺ in the visible and near infrared region the ⁴G_5/2 →⁶H_7/2 one has the highest intensity with a peak emission cross section of 3.54×10⁻²¹ cm² at 601 nm for light polarized parallel to the crystallographic axis c of the crystal. The luminescence decay curve recorded for Gd₂SiO₅:0.5 at% Sm³⁺ follows a single exponential time dependence with a lifetime 1.74 ms, in good agreement with the ⁴G_5/2 radiative lifetime τ _rad=1.78 ms calculated in the framework of Judd-Ofelt theory. Considerably faster and non-exponential luminescence decay recorded for Gd₂SiO₅:5 at% Sm³⁺ sample was fitted to that predicted by the Inokuti-Hirayama theory yielding the microparameter of Sm³⁺–Sm³⁺ energy transfer C _da=1.264×10⁻⁵² cm⁶×s⁻¹.     

Laser spectroscopy of optical centers in borosilicophosphate glass, coactivated by erbium and ytterbium ions

Based on analysis of the laser emission spectra of borosilicophosphate glass, coactivated by Er³⁺ and Yb³⁺ ions, we have determined the structure of the Stark splitting of the luminescence band for the erbium ion in the 1.5 μm region (the transition ⁴I_13/2 → ⁴I_15/2). In the wavelength interval 1532–1547 nm, we identified 12 sets of lines belonging to different types of optical centers of predominantly cubic symmetry. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 4, pp. 483–487, July–August, 2006.     

Er3+-doped sol–gel SnO2 for optical laser and amplifier applications

Erbium-doped tin dioxide (SnO₂:Er³⁺) was obtained by the sol–gel method. Spectroscopic properties of the SnO₂:Er³⁺ are analyzed from the Judd–Ofelt (JO) theory. The JO model has been applied to absorption intensities of Er³⁺ (4f¹¹) transitions to establish the so-called Judd–Ofelt intensity parameters: Ω₂, Ω₄, and Ω₆. With the weak spectroscopic quality factors Ω₄/Ω₆, we expect a relatively prominent infrared laser emission. The intensity parameters are used to determine the spontaneous emission probabilities of some relevant transitions, the branching ratios, and the radiative lifetimes of several excited states of Er³⁺. The emission cross section (1.31×10^-20 cm²) is evaluated at 1.54 μm and was found to be relatively high compared to that of erbium in other systems. Efficient green and red up-conversion luminescence were observed, at room temperature, using a 798-nm excitation wavelength. The green up-conversion emission is mainly due to the excited state absorption from ⁴ I _11/2, which populates the ⁴ F _3/2,5/2 states. The red up-conversion emission is due to the energy transfer process described by Er³⁺ (⁴I_13/2)+Er³⁺(⁴I_11/2)→Er³⁺(⁴F_9/2)+Er³⁺ (⁴ I _15/2) and the cross-relaxation process. The efficient visible up-conversion and infrared luminescence indicate that Er³⁺-doped sol–gel SnO₂ is a promising laser and amplifier material. PACS 71.20.Eh; 74.25.Gz; 78.55.-m     

Wide colour gamut generated in triply lanthanide doped sol–gel nano-glass–ceramics

The generation of a wide colour gamut, based on up-conversion of cheap near-infrared photons into the visible range, is of great importance for general lighting appliances and integrated optical devices. Here, we report for the first time on up-conversion luminescence under infrared excitation at 980 nm in Yb³⁺–Er³⁺–Tm³⁺ triply doped sol–gel derived SiO₂–LaF₃ based nano-glass–ceramics (SOL-YET), containing LaF₃ nanocrystals with a size about 13 nm. Efficient simultaneous up-conversion emission of the three primary colours (blue, green and red) gives rise to a balanced white overall emission. The ratio between up-conversion emission bands can be varied by changing pump power intensity resulting in colour tuneable up-conversion phosphor.     

Luminescence of CaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>:Eu crystals

We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa₂Se₄:Eu crystals in the temperature range 77–400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f⁶ 5d–4f⁷ (⁸S_7/2) of the Eu²⁺ ions. From the temperature dependence of the intensity (log I–10³/T), we determined the activation energy (E _a = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu²⁺ ions in the CaGa₂Se₄ crystal found from the luminescence decay kinetics is 3.8 μsec. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 112–116, January–February, 2009.     

Intense red upconversion fluorescence emission in NIR-excited erbium-ytterbium doped laponite-derived phosphor

In this report the optical properties and energy-transfer frequency upconversion luminescence of Er³⁺/Yb³⁺-codoped laponite-derived powders under 975 nm infrared excitation is investigated. The 75%(laponite):25%(PbF₂) samples doped with erbium and ytterbium ions, generated high intensity red emission around 660 nm and lower intensity green emission around 525, and 545 nm. The observed emission signals were examined as a function of the excitation power and annealing temperature. The results indicate that energy-transfer, and excited-state absorption are the major upconversion excitation mechanism for the erbium excited-state red emitting level. The precursor glass samples were also heat treated at annealing temperatures of 300 °C, 400 °C, 500 °C, and 600 °C, for a 2 h period. The dependence of the visible upconversion luminescence emission upon the annealing temperature indicated the existence of an optimum temperature which leads to the generation of the most intense and spectrally pure red emission signal.     

Excitation process and photoluminescence properties of Tb and Eu ions in SnO2 and in SnO2: Porous silicon hosts

Tin oxide (SnO₂)-layers-doped terbium and europium ions are elaborated by the sol-gel method on silicon substrates. After annealing at 500 °C, the transmission electron microscopy revealed a crystallization of tin oxide.The emission properties of rare-earth in SnO₂ are studied systematically against temperature annealing and Tb³⁺ concentration. The PL spectrum is optimal after annealing at 900 °C and the corresponding photoluminescence (PL) decay is nearly exponential, showing that the sample is homogenous and the PL process can be described by two levels system.The concentration effect shows a quenching of the PL intensity for Tb³⁺ concentration above 4%. From the investigation of the decay rate from the ⁷F₅ state within terbium concentration, we show that self-quenching is insured by dipole - dipole interaction. The evolutions of both PL intensity and PL lifetime versus temperature are studied. The PL intensity and PL lifetime are enhanced by deposing SnO₂:Tb³⁺ and SnO₂:Eu³⁺ in porous silicon. We show that an efficient excitation transfer from Si nanocrystallites to RE ions can occur.     

Effect of alkali-metal doping on photoluminescence of CdS films

It is established that doping of CdS polycrystalline films with alkaline metals (Li, Na, K, Cs) results in an increase of luminescence intensity by 3–5 times compared with pure films. This increase is accounted for by the placement of alkaline-metal ions in V _Cd ²⁻ cation vacancies, which are nonradiative recombination centers in these films. From the dependences of the luminsecence intensity of the doped films on the synthesis conditions (deposition temperature, concentration of doping impurities, type of doping metal), the parameters that ensure the maximum luminescence intensity of the films are determined as T_dep ≈ 450°C and C_Me = 1·10⁻⁵ at %. The luminescence intensity decreases by 1–3% upon exposure of the films to UV light (λ_max = 365 nm, I = 10²¹ quanta·sec·cm⁻¹) for several hours. This is indicative of the stability of these films against UV radiation. __________ Translated from Zhurnal Prikladnoi Spektroskopii Vol. 74, No. 3, pp. 362–366, May–June, 2007.     

Luminescence of CsBr:Eu films grown by liquid-phase epitaxy

By liquid-phase epitaxy from an aqueous alcoholic solution, we have obtained films of the well-known storage phospor CsBr:Eu, and we have studied their cathodoluminescence and photoluminescence (PL) spectra compared with the undoped CsBr films. We have established that the structure of the photoluminescence centers of the CsBr:Eu films when excited by laser radiation in the absorption band of the Eu²⁺ ions (λ = 337 nm) includes Eu²⁺-V_Cs isolated dipole centers and CsEuBr₃ aggregate centers, and also luminescence centers based on inclusions of hydroxyl group OH⁻ with the corresponding emission bands in the 440 nm, 520 nm, and 600 nm regions. We have studied the dependence of the spectra and the intensity of the photoluminescence for CsBr:Eu films on annealing temperature in air at 423–483 K, compared with analogous dependences for CsBr:Eu single crystals obtained from the melt. We have shown that annealing the films at T = 423–463 K leads to rapid formation of CsEuBr3 aggregate luminescence centers, while for T > 473 K thermal degradation of these centers occurs. We conclude that the observed differences between the photoluminescence spectra of CsBr:Eu films and CsBr:Eu single crystals may be due to additional doping of the films with OH⁻ ions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 191–194, March–April, 2006.     

Synchrotron and laser excitation of luminescence in PbWO<Subscript>4</Subscript>:Tb crystals at different temperatures

The effect of temperature on the spectral luminescence characteristics of PbWO₄:Tb³⁺ crystals with synchrotron and laser excitation is studied. If PbWO₄:Tb³⁺ is excited by synchrotron radiation with λ = 88 nm at 300 K, a faint recombination luminescence of the impurity terbium is observed against the matrix luminescence. When the temperature is reduced to 8 K, the luminescence intensity of PbWO₄:Tb³⁺ increases by roughly an order of magnitude and the characteristic luminescence of the unactivated crystal is observed. Excitation of PbWO₄:Tb³⁺ by a nitrogen laser at 300 K leads to the appearance of emission from Tb³⁺ ions. At 90 K, a faint matrix luminescence is observed in addition to the activator emission. The formation of the luminescence excitation spectra for wavelengths of 60–320 nm is analyzed and the nature of the emission bands is discussed.     

Acid functionalized,highly dispersed carbonaceous spheres: an effective solid acid for hydrolysis of polysaccharides

Highly dispersed carbonaceous spheres with sulfonic acid groups were successfully prepared from glucose by hydrothermal method. Transmission electron microscopy (TEM) showed the as-synthesized carbonaceous materials were uniform, spherical in shape with an average diameter of about 450 nm. Fourier transform infrared (FT-IR) proved that –SO₃H, –COOH, OH groups were grafted on the surface of the carbonaceous spheres during the sulfonation. Interestingly, the functionalized carbonaceous spheres exhibited high dispersibility in the polar solvent due to the hydrophilic groups on the surface. The mechanism of the formation for the carbonaceous spheres was also discussed based on the analysis of structure and composition. At last, the functionalized carbonaceous spheres were employed as solid acid to hydrolyze starch and cellulose. By comparison, the as-synthesized catalyst showed considerable high yield of glucose.     

Multifunctional Er3+–Yb3+ codoped Gd2O3 nanocrystalline phosphor synthesized through optimized combustion route

This paper reports the synthesis of high upconversion luminescent Gd₂O₃: Er³⁺, Yb³⁺ nanophosphor through optimized combustion route using urea as a reducing agent. The paper also reports the first observation of upconversion emission bands extending upto the UV region (335, 366 and 380 nm) in Er³⁺–Yb³⁺ co-doped phosphor materials. The fuel to oxidizer ratio has been varied to obtain the maximum upconversion luminescence. Three high intensity bands are found at 408, 523–548 and 667 nm due to the ⁴G_11/2 → ⁴I_15/2, ²H_11/2, ⁴S_3/2 → ⁴I_15/2 and ⁴F_9/2 → ⁴I_15/2 transitions, respectively, along with the other bands. Input excitation power dependence has been studied for different transitions, and the saturation effect and decrease in the slope of different transitions at higher input pump power has been explained. Heat treatments of the samples show change in crystallite phase/size and relative upconversion luminescence intensities of blue, green and red bands. The color of the phosphor emission has shown to be tunable with change in the crystal structure as well as on excitation laser power and Er³⁺–Yb³⁺ concentration. The property of color tunability of the phosphor material has been used to record the fingerprint in different colors. Also, the future prospect of the nanocrystalline phosphor material as a sensor for temperature, using FIR method, has been explored.     

Time-resolved luminescence of ZnIn2S4 at low temperature

Summary A detailed study of the time-resolved luminescence of ZnIn₂S₄ after pulsed-laser excitation at 30 K is presented. Results are given on the dependence of the emitted PL intensity at different emission wavelengths on the excitation intensity, on the time-resolved spectra in the range (0÷10⁻¹) s of delay time with respect to excitation and on the time decay of the luminescence intensity for different emission wavelengths. The results are discussed in the framework of a simple model for the recombination processes at low temperatures yielding a good overall agreement with the experimental data. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.     

Kinetics of luminescence of interface defects and resonant Er ions in nanostructured SnO2:SiO2

Silica glass with SnO₂ nanocrystals and Er³⁺ ions are prepared by the sol-gel route and treatment above 1000 °C. Transmission electron microscopy evidences a homogeneous dispersion of nanoclusters 4-6 nm in size in the amorphous silica matrix. Photoluminescence spectra excited at 3.5 eV, outside erbium transitions, show an inhomogeneous spectral distribution of light emission from interface defects, in the range 1.9-2.4 eV, resonant with transitions of erbium ions. The analysis of kinetics and temperature dependence of luminescence allows to quantify the efficiency of the energy transfer channel between nanoclusters and erbium ions.