Thermal Stress Analysis of a Continuous and Pulsed End-Pumped Nd:YAG Rod Crystal Using Non-Classic Conduction Heat Transfer Theory

In this paper, temperature distribution in the continuous and pulsed end-pumped Nd:YAG rod crystal is determined using nonclassical and classical heat conduction theories. In order to find the temperature distribution in crystal, heat transfer differential equations of crystal with consideration of boundary conditions are derived based on non-Fourier’s model and temperature distribution of the crystal is achieved by an analytical method. Then, by transferring non-Fourier differential equations to matrix equations, using finite element method, temperature and stress of every point of crystal are calculated in the time domain. According to the results, a comparison between classical and nonclassical theories is represented to investigate rupture power values. In continuous end pumping with equal input powers, non-Fourier theory predicts greater temperature and stress compared to Fourier theory. It also shows that with an increase in relaxation time, crystal rupture power decreases. Despite of these results, in single rectangular pulsed end-pumping condition, with an equal input power, Fourier theory indicates higher temperature and stress rather than non-Fourier theory. It is also observed that, when the relaxation time increases, maximum amounts of temperature and stress decrease.     

The effect of simultaneous temperature, pressure and stress on the experimental annealing of spontaneous fission tracks in apatite: a brief overview

Tracks made in minerals by the electronic stopping of uranium fission fragments provide a modern geological dating tool, and are believed also to yield specific information on the low-temperature thermal history of rocks. Experimental work showing that the damaged crystal lattice along a fission track recovers primarily as a function of temperature ignored the fact that the basic theory of atomic diffusion requires an exponential decrease in the intrinsic diffusion coefficient with increasing pressure. Here, fission track recovery was experimentally investigated in basic apatite under the simultaneous influences of temperature, pressure and stress. We show that track fading is a complex recovery mechanism responding to several environmental physical parameters simultaneously. In particular a strong decrease in the track recovery rate was observed as a function of increasing pressure. And a nearly temperature-independent recovery was observed in samples under stress.     

单轴应力场下钨中氦扩散行为的分子动力学模拟研究

本文采用分子动力学方法研究了沿<100>及<111>晶向的单轴应变对钨中单个氦原子扩散的影响。结果表明,应变会使得金属钨材料发生相变,且引起相变的临界应变随温度升高而减小。相变起始的应变在达到抗拉强度的应变附近。计算结果表明,拉应变使得单个氦原子在钨中的扩散系数发生骤降,在不同应变下扩散系数变化平缓。沿<100>晶向氦扩散系数随应变的增大而线性减小,而<111>晶向则出现了震荡变化趋势。研究结果表明,沿<100>晶向应变达到+0.15%时阿纽列斯方程不再适用,而沿<111>晶向应变大+5%阿纽列斯方程仍然适用;沿<111>晶向随应变增加氦扩散激活能减小,说明应变使得单个氦原子在钨中迁移性增强。     

Inward diffusion of oxygen on a silicon surface

Cluster computations with the density functional theory were performed to clarify the diffusion mechanism of an O atom adsorbed on a Si surface. The activation energy required for the oxygen diffusion into the Si substrate is estimated to be 1.6 eV, which is fairly small compared to oxygen diffusion within a Si crystal. The presence of a surface dangling bond is responsible for the lowering of the activation energy, assisting the generation of an intermediate which is involved in the rearrangement of the Si-O connections. Adsorption of another O atom on the Si surface appears to further enhance the inward oxygen diffusion.     

Breakdown of classical nucleation theory near isostructural phase transitions

We report simulations of crystal nucleation in binary mixtures of hard spherical colloids with a size ratio of 1:10. The stable crystal phase of this system can be either dense or expanded. We find that, in the vicinity of the solid-solid critical point where the crystallites are highly compressible, small crystal nuclei are less dense than large nuclei. This phenomenon cannot be accounted for by either classical nucleation theory or by the Gibbsian droplet model. We argue that the observed behavior is due to the surface stress of the crystal nuclei. The observed effect highlights a general deficiency of the most frequently used thermodynamic theories for crystal nucleation. Surface stress should lead to an experimentally observable expansion of crystal nuclei of colloids with short-ranged attraction and of globular proteins.     

Fracture in mercury cadmium telluride as a function of incident light

We have observed the influence of light on the fracture tougness in crystal of HgCdTe. The response of the crystal to light depends on the overall strain. For strains less than that corresponding to the ultimate tensile stress the crystal hardens when irradiated. After the ultimate tensile stress has been reached and the crstal with light. is seen to produce a reversible softening. Quantitative results are presented and explained in terms of elementary fracture mechanics and dislocation theory.     

广义平面应变锂离子电池柱形梯度材料颗粒电极中扩散诱导应力分析

柱形梯度材料是最有潜力的锂离子电池电极之一. 为了研究恒压充电过程中柱形梯度材料颗粒电极下力学机理, 以Li_1.2(Mn_0.62Ni_0.38)_0.8O₂为例, 讨论弹性模量、扩散系数和偏摩尔体积三个重要材料参数对应力场影响. 并推导出非均匀柱形颗粒电极的扩散方程和力学方程. 结果表明, 柱形梯度材料纳米电极, 沿着半径方向Mn 的材料组分升高Ni 的材料组分降低, 其材料结构有利于降低最大径向应力和环向拉应力, 有效地避免电极的力学失效现象. 并根据计算结果, 对梯度材料电极提出材料结构优化建议.     

Dielectric and anelastic relaxation of crystals containing point defects. II

In part I (1965, Adv. Phys., 14, 101), a theory was developed which treated the thermodynamics of dielectric and anelastic relaxation due to point defects in crystals from the viewpoint of the point symmetry of the defect as well as of the crystal. In the present paper this theory is extended to treat the kinetics of relaxation. Equations are derived which express the relaxation times of electrically and stress active modes of relaxation in terms of the rates of reorientation between one particular defect orientation and all of the other equivalent configurations. Explicit expressions are then given for these relaxation times for commonly occurring crystal and defect symmetries. The reorientation frequencies which appear in these expressions may be converted into the appropriate atom or ion jump rates; this final step can generally be carried out merely by inspection of the crystal model. The possibility that two or more relaxations due to a given point defect may be widely separated on a frequency or temperature scale (a situation which is called a ‘frozen-free split’), and the anomalies connected with such behaviour, are discussed. Finally, various examples which have been studied in the literature, of relaxations due to point defects, are reviewed in the framework of the present theory.     

Two-wave interaction on a photorefractive grating in cubic gyrotropic crystals in the case of strong coupling

The effect of nonunidirectional energy exchange on the intensity and polarization state of the signal wave is analyzed in the case of symmetric two-wave coupling on a transmission photorefractive grating produced by a diffusion mechanism in a gyrotropic cubic crystal belonging to the point group 23.     

Swelling of a material in a complex stress state

An examination is made of the effect of a local stress field created near a void in a specimen in a three-dimensional stress state. A solution is obtained to the problem of the diffusion of point defects over the surface of the void under conditions of saturation by point defects generated by a flow of radiation. The change in swelling in different stress states relative to an unloaded specimen is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 23–29, January, 1986.     

Phase Transition for a Mixed Spin-1/2 and Spin-sB System with a Transverse Crystal Field

The critical behaviors of a mixed spin-1/2 and spin-s_B Ising system with a transverse crystal field are studied by use of the effective-field theory with correlations. The effect of the transverse crystal field on transition temperatures is investigated numerically for the honeycomb (z=3) and square (z=4) lattices. The results show that there is no tricritical point for the system.     

点缺陷对单晶硅力学性能影响的分子动力学研究

本文采用分子动力学方法模拟了含有不同大小点缺陷的单晶硅在恒定应变率作用下的破坏过程,以及点缺陷对单晶硅屈服强度的影响,结果表明:点缺陷能显著减小单晶硅的屈服强度,且屈服强度的变化趋势和点缺陷的大小服从指数函数关系,经过分析发现是点缺陷诱发的应力集中效应降低了屈服强度.通过利用已有的四类强度理论进行校核,发现米塞斯强度理论最适合描述单晶硅的屈服强度,且单晶硅晶体的破坏过程可以由米塞斯应力的演化和聚集效应来说明.最后,在可视化分析破坏后的结构时,发现破坏过程产生的微结构沿着解理面分布,其微观构造类似于二维网格.本文研究结果为评估点缺陷对单晶硅屈服强度的影响机理提供了参考.     

The diffusion of the excitation energy in molecular crystals

A theory of the coefficient of diffusion of an exciton in molecular crystals is elaborated, based on the conception of the exciton as the excited state of the molecule of a crystal propagating through the crystal by chance transition from one molecule to another. The theoretical results are compared with the experimental data for an anthracene crystal.     

State of stress at a crystal surface deformed by a concentrated load in the presence of a wedge twin

A procedure for the calculation of the stress fields near a wedge twin located at a crystal surface is developed using a dislocation macroscopic model. The problem is solved for the case of a concentrated load applied to the surface of a crystal with a twin. The concentrated load is found to increase the level of stresses near the wedge twin and to cause their localization at the twin boundary that is closer to the load application point.     

Response of thermal source in a transversely isotropic thermoelastic half-space with mass diffusion by using a finite element method

The two-dimensional problem of generalized thermoelastic diffusion material with thermal and diffusion relaxation times is investigated in the context of the Lord-Shulman theory.As an application of the problem,a particular type of thermal source is considered and the problem is solved numerically by using a finite element method.The components of displacement,stress,temperature distribution,chemical potential,and mass concentration are obtained.The resulting quantities are depicted graphically for a special model.An appreciable effect of relaxation times is observed on various resulting quantities.     

Quantum diffusion

Basic ideas and results which characterize quantum diffusion of defects in quantum crystals like solid helium as a new phenomenon are presented. Quantum effects in such media lead to a delocalization of point defects (vacancies, impurities etc.) and they turn into quasiparticles of a new type—defectons, which are characterized not by their position in the crystal lattice but by their quasimomentum and dispersion law. Defecton-defecton and defecton-phonon scattering are considered and an interpolation formula for the diffusion coefficient valid in all interesting temperature and concentration regions is presented. A comparison with the experimental data is made. Some alternative points of view are discussed in detail and the inconsistency of the Kisvarsanyi-Sullivan theory is shown.     

Orientational Ordering of a Liquid-Crystal Suspension of Carbon Nanotubes in a Magnetic Field

A statistical theory is proposed to describe a suspension of carbon nanotubes in a nematic liquid crystal. The mean-field approach is used, and dispersion attraction, the excluded volume effects, the diamagnetism of liquid crystal molecules, and the strong diamagnetism of nanotubes are taken into account. The influence of the volume fraction of impurity, temperature, and magnetic field on the orientational ordering of a liquid crystal matrix and carbon nanotubes is studied. The concentration and temperature phase transitions in the suspension are investigated for various magnetic fields. The concentration and field shifts of the point of the phase transition between nematic and isotropic or paranematic phases are studied.     

On the impact of stress on intrinsic defect formation during single crystal silicon growth

The incorporation of intrinsic point defects during silicon crystal growth from the melt is discussed using most recent data for intrinsic point defect thermal equilibrium concentration and diffusivity. It is shown that by taking into account the impact of stress on the thermal equilibrium concentration of vacancies and self-interstitials, the intrinsic point defect properties derived from self- and metal-diffusion experiments can be used to model point defect incorporation and clustering during silicon crystal growth from the melt. The solution is however not unique and a large uncertainty still remains on the real thermodynamic parameters of both intrinsic point defects. Only comparison with a wide range of experimental data from crystal pulling experiments—taking into account also the stress effects—will allow to further narrow down the uncertainty ranges on the intrinsic point defect properties in silicon.     

Phonon induced tunneling of ions in solids

A quantum mechanical analysis is given of the change of position or orientation of an atom, ion or molecule in a crystal as it occurs e.g. in the processes of diffusion or hindered rotation. One-phonon processes, Raman processes and indirect processes are discussed. The limits of applicability of the classical rate theory are given. Specifically, the analysis is applied to the reorientation of the O₂- center in alkali halides under the influence of external mechanical stresses at low temperatures, which has been investigated experimentally byKänzig. The measured dependence of the reorientation time upon temperature and applied stress can be explained by one-phonon processes. Random internal strains in the crystal are shown to play an important part. As further application of the theory the proton motions in ice and in iron are elucidated. Finally, an estimate is given of the effect of direct processes involving imperfections on the thermal conductivity of alkali halides.     

Response of thermal source in a transversely isotropic thermoelastic half-space with mass diffusion by finite element method

The two-dimensional problem of generalized thermoelastic diffusion material with thermal and diffusion relaxation times is investigated in the context of Lord-Shulman theory. As an application of the problem, a particular type of thermal source is considered and the problem is solved numerically by using a finite element method. The components of displacement, stress, temperature distribution, chemical potential, and mass concentration are obtained. The resulting quantities are depicted graphically for a special model. Appreciable effect of relaxation times is observed on various resulting quantities.