Multiple photonic responses in films of organic-based magnetic semiconductor V(TCNE)x, x approximately 2

Concomitant photoinduced magnetic and electrical phenomena are reported for the organic-based magnetic semiconductor V(TCNE)x (x approximately 2; TCNE=tetracyanoethylene; magnetic ordering temperature Tc approximately 400 K). Upon optical excitation (457.9 nm), the system can be trapped in a thermally reversible photoexcited state, which exhibits reduced magnetic susceptibility and increased conductivity with a simultaneous change in IR absorption spectrum. The multiple photonic effects in V(TCNE)x are proposed to originate from structural changes induced by internal excitation in (TCNE)- anions, which lead to relaxation to a long-lived metastable state.     

Bonding, backbonding, and spin-polarized molecular orbitals: basis for magnetism and semiconducting transport in V[TCNE]x approximately 2

X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (MCD) at the V L{2,3} and C and N K edges reveal bonding and backbonding interactions in films of the 400 K magnetic semiconductor V[TCNE]x approximately 2. In V spectra, d{xy}-like orbitals are modeled assuming V2+ in an octahedral ligand field, while d{z{2}} and d{x{2}-y{2}} orbitals involved in strong covalent sigma bonding cannot be modeled by atomic calculations. C and N MCD, and differences in XAS from neutral TCNE molecules, reveal spin-polarized molecular orbitals in V[TCNE]x approximately 2 associated with weaker pi bonding interactions that yield its novel properties.     

X-ray magnetic circular dichroism and resonant photomission of V(TCNE)x hybrid magnets

Thin films of V(TCNE)x were deposited in ultrahigh vacuum using a film growth technique based on in situ chemical vapor deposition of tetracyanoethylene, TCNE, and bis-benzene vanadium, V(C6H6)2. The in situ preparation method enabled, for the first time, experimental analysis of oxygen-free films. X-ray magnetic circular dichroism measurements recorded at the V L(2,3) edge confirmed room temperature magnetic ordering. A combination of conventional photoelectron spectroscopy (PES) and resonant photoemission (RPE) measured at the V L3 edge shows that the highest occupied electronic state is V(3d) derived. The rearrangements of the TCNE- related valence electronic states observed in PES and the evidence of V(3d) and TCNE- pi(pi*) orbital overlap contained in RPE spectra, indicate that strong, covalent type bonding occurs between the vanadium and the TCNE molecules.     

Photoinduced magnetization in the organic-based magnet Mn(TCNE)(x)* y(CH2Cl2)

Photoinduced magnetization in a magnet based on organic species is reported for the first time. Upon optical excitation in the blue region of spectrum, Mn(tetracyanoethylene)(x)*y(CH2Cl2) (x approximately 2, y is approximately 0.8) exhibits increased magnetic susceptibility at temperatures as high as 75 K, accompanied with photoinduced absorption in the visible and infrared spectral regions. These effects are partially reversible by lower energy visible light and fully reversible by thermal treatment. The results suggest trapping of the photoexcited charge in a metastable state with enhanced exchange interaction.     

Photoinduced magnetism caused by charge-transfer excitations in tetracyanoethylene-based organic magnets

The photoinduced magnetism in Mn-tetracyanoethylene (TCNE) molecule-based magnets is ascribed to charge-transfer excitations from manganese to TCNE. Charge-transfer energies are calculated using density functional theory; photoinduced magnetization is described using a model Hamiltonian based on a double-exchange mechanism. Photoexciting electrons from the manganese core spins into the lowest unoccupied orbital of TCNE with photon energies around 3 eV increase the magnetization through a reduction of the canting angle of the manganese core spins for an average electron density on TCNE less than one. When photoexciting with a smaller energy, divalent TCNE molecules are formed. The delocalization of the excited electron causes a local spin flip of a manganese core spin.     

First-principles study on magnetism of different dimensional Ru systems

The magnetism, the magnetocrystalline anisotropy and the optical properties of the monolayer and atomic chain of 4d transition-metal Ru are investigated by using the full-potential linearized-augmented-plane-wave method in a generalized gradient approximation. The magnetic moments are 1.039~μ __B/atom and 1.130~μ_B/atom for the monolayer and atomic chain, respectively. Both systems have large magnetocrystalline anisotropy energy (MAE). The magnetic easy axis is normal to the monolayer and perpendicular to the chain axis in the atomic chain. The optical properties of the two low-dimensional Ru systems are investigated by calculating the complex optical conductivity tensor. Both systems exhibit anisotropy in photoconductivity, especially for the atomic chain. The physical origins of MAE and photoconductivity are studied based on electronic structures. It is found that the changes in crystal field caused by different symmetry-breaking mechanisms in the two low-dimensional Ru systems result in MAE through spin--orbit coupling, while the anisotropy in photoconductivity mainly comes from the crystallographic anisotropy.     

170 nm nuclear magnetic resonance imaging using magnetic resonance force microscopy

We demonstrate one-dimensional nuclear magnetic resonance imaging of the semiconductor GaAs with 170 nm slice separation and resolve two regions of reduced nuclear spin polarization density separated by only 500 nm. This was achieved by force detection of the magnetic resonance, magnetic resonance force microscopy (MRFM), in combination with optical pumping to increase the nuclear spin polarization. Optical pumping of the GaAs created spin polarization up to 12 times larger than the thermal nuclear spin polarization at 5K and 4T. The experiment was sensitive to sample volumes of 50 microm(3) containing approximately 4 x 10(11)71 Ga/Hz. These results demonstrate the ability of force-detected magnetic resonance to apply magnetic resonance imaging to semiconductor devices and other nanostructures.     

Magnetocrystalline anisotropy and dynamic spin reorientation of half-doped Nd_(0.5)Pr_(0.5)FeO_3 single crystal

The single crystals of Nd_(0.5)Pr_(0.5)FeO_3 were successfully grown by optical floating zone method.Room temperature x-ray diffraction and Laue photograph declared the homogeneity and high quality of the crystal.The significant magnetic anisotropy and multiple magnetic transitions illustrate the complex magnetic structure.At high temperatures(T 66 K),it shows the typical characteristics of Γ_4(G_x,A_y,F_z) state.With the decrease of the temperature,it undergoes a first-order spin reorientation transition from Γ_4(G_x,A_y,F_z) to Γ_2(F_x,C_y,G_z) state in the temperature window of 45-66 K under an applied magnetic field of 0.01 T.As the temperature drops to ～17 K,a new magnetic interaction mechanism works,which results in a further enhancement of magnetization.The T-H phase diagram of Nd_(0.5)Pr_(0.5)FeO_3 single crystal was finally constructed.     

Thickness-dependent magnetic properties in Pt/[Co/Ni]n multilayers with perpendicular magnetic anisotropy

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co($t_{\rm Co}$)/Ni($t_{\rm Ni}$)]$_{5}$/Pt(1 nm) multilayers by combining the four standard magnetic characterization techniques. The magnetic-related hysteresis loops obtained from the field-dependent magnetization $M$ and anomalous Hall resistivity (AHR) $\rho_{{xy}}$ showed that the two serial multilayers with $t_{\rm Co} = 0.2$ nm and 0.3 nm have the optimum PMA coefficient $K_{\rm U}$ as well as the highest coercivity $H_{\rm C}$ at the Ni thickness $t_{\rm Ni}= 0.6 $ nm. Additionally, the magnetic domain structures obtained by magneto-optic Kerr effect (MOKE) microscopy also significantly depend on the thickness and $K_{\rm U}$ of the films. Furthermore, the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to $K_{\rm U}$ and $H_{\rm C}$, indicating that inhomogeneous magnetic properties dominate the linewidth. However, the intrinsic Gilbert damping constant determined by a linear fitting of the frequency-dependent linewidth does not depend on the Ni thickness and $K_{\rm U}$. Our results could help promote the PMA [Co/Ni] multilayer applications in various spintronic and spin-orbitronic devices.     

Spectral Photosensitization of Optical Anisotropy in Solid Poly(Vinyl Cinnamate) Films

The possibility and features of formation of sensitized photoinduced optical anisotropy in amorphous films of poly(vinyl cinnamate) and its derivative poly(vinyl-4-metoxicinnamate) under the action of polarized light (including light that is not absorbed by polymer macromolecules themselves) have been investigated. It is found that the effect of induced optical anisotropy is based on the transfer of electron excitation energy from donor (sensitizer) molecules to acceptor molecules and is observed in the course of phototopochemical biomolecular cyclization reaction of cinnamate fragments in polymer macromolecules. The detected photoinduced anisotropy in solid films of poly(vinyl cinnamate) and its derivative poly(vinyl-4-metoxicinnamate) ensures sensitized photo-orientation of low-molecular thermotropic liquid crystals.     

Primary processes of laser-induced selective dimer-layer removal on Si(001)-(2x1)

Excitation with nanosecond-laser pulses at fluences well below the melt threshold removes Si dimers on the Si(001)-(2x1) surface and induces atomic-Si desorption through an electronic mechanism. The rate of this photoinduced reaction depends superlinearly on the excitation intensity, and is enhanced resonantly at the photon energy where the optical transition injects holes into the dimer backbond surface-band state. The results reveal the crucial role of surface holes and their nonlinear localization in the bond rupture of Si dimers on this surface.     

Magnetic excitations in ferromagnetic semiconductors

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors.     

Magnetic domain structure and magnetic anisotropy in Ga1-xMn(x)As

Large, well-defined magnetic domains, on the scale of hundreds of micrometers, are observed in Ga1-xMn(x)As epilayers using a high-resolution magneto-optical imaging technique. The orientations of the magnetic moments in the domains clearly show in-plane magnetic anisotropy, which changes through a second-order transition from a biaxial mode (easy axes nearly along [100] and [010]) at low temperatures to an unusual uniaxial mode (easy axis along [110]) as the temperature increases above about T(c)/2. This transition is a result of the interplay between the natural cubic anisotropy of the GaMnAs zinc-blende structure and a uniaxial anisotropy which attribute to the effects of surface reconstruction.     

Field-dependent anisotropy change in a supramolecular Mn(II)- [3 x 3] grid

The magnetic anisotropy of a novel Mn(II)- [3x3] grid complex was investigated by means of high-field torque magnetometry. Torque vs field curves at low temperatures demonstrates a ground state with S>0 and exhibits a torque step due to a field-induced level crossing at B(*) approximately 7.5 T, accompanied by an abrupt change of magnetic anisotropy from easy-axis to hard-axis types. These observations are discussed in terms of a spin Hamiltonian formalism.     

Orientation and alignment during materials processing under high magnetic fields

The characteristics of lattice structures can make crystal possess distinct anisotropic features, such as the varying magnetism in different crystal orientations and different directions. The anisotropic magnetism can also cause the free energy to vary in different orientations of crystal in a magnetic field(magnetic anisotropy energy). Magneto-anisotropy can make the crystal rotate by the magnetic force moment on the crystal with the easy axis towards the direction of the magnetic field, and can also promote the preferential growth along a certain crystal direction at the lowest energy state.By solidification, vapor-deposition, heat treatment, slip casting and electrodeposition under magnetic field, the crystal structure with high grain orientation is obtained in a variety of binary eutectics, peritectic alloys, multicomponent alloys and high temperature superconducting materials. This makes it possible to fabricate texture-functional material by using high magnetic field and magneto-crystalline anisotropy of crystal. The purpose of this article is to review some recent progress of the orientation and alignment in material processing under a high magnetic field.     

Ionic liquid gating control of magnetic anisotropy in Ni0.81Fe0.19 thin films

Voltage control magnetism is one of the most energy efficient pathway towards magnetoelectric (ME) device. Ionic liquid gating (ILG) method has already shown impressive manipulation power at the IL/electrode interface to influence the structure, orbital as well as spin of the electrode materials. As key material in anisotropy magnetoresistance sensor and spin valve heterostructure, the permalloy Ni_0.81Fe_0.19 was utilized as the electrode to investigate the ILG induced magnetic anisotropy change. In this work, we realized magnetic anisotropy control in Au/[DEME]⁺[TFSI]^-/Ni_0.81Fe_0.19 (2.5 nm)/Ta heterostructure via ILG caused electrostatic doping. This is evidenced in situ reversible ferromagnetic field (H_r) shift with electron spin resonance (ESR) spectrometer. Aiming at the question whether the charge accumulation at the ionic liquid interface is the main control mechanism at low voltage, we carefully tested the relationship between the change of resonance field and the amount of surface charge. It was found that these two had a good linear relationship between −1 V and +1 V. Defining the linear parameter as A whose value is 28.7 mT m²/Col. Unlike previously reported chemical regulation of Co, this article used ionic liquids to physically regulate NiFe, which has not been studied in the previous ionic liquid regulation. And NiFe has a narrower resonance line width for easy reference to microwave devices. In addition, It also has a stronger ferromagnetic signal than Co, which can be more easily detected as a sensor device. Therefore, this system is more promising. The ILG control NiFe may lead to a new kind of magnetoelectric sensor devices and path a new way to low energy consumption spintronics.     

Electric and magnetic excitations in anisotropic broadside-coupled triangular-split-ring resonators

The electric and magnetic resonances of anisotropic broadside-coupled triangular-split-ring resonators are studied for different incident wave excitations. It is shown that the higher order modes exist in both electric and magnetic resonances. It is observed that the incident electric field couples to the magnetic resonance of the designed structure under different excitations. Multiple resonance features due to the anisotropy of the structure are found in the case of different excitations and the nature of these resonances can be regulated as either an electric or a magnetic mode for different frequencies. In this way, a resonant effective permittivity or permeability can be obtained. Hence, controllable properties of the constitutive material parameters (i.e. electric or magnetic resonances, negative values, etc.) can be determined by changing the incident wave excitation.     

Giant intrinsic magnetic hardness in RFe5−x Ni x (R=rare earth,x=4 to 5)

Giant low temperature intrinsic magnetic hardness is observed in structurally homogeneous CaCu₅ type compounds RFe_5−x Ni _x . In SmFe_5−x Ni _x , this magnetic hardness peaks approximately at a composition SmFe_0.2Ni_4.8, with an extrapolated coercive force of 230 kOe at absolute zero. The transition metal sublattice is not anisotropic. Thus, the rare earth alone creates giant coercivity. Only compounds withc-axis preference exhibit substantial magnetic hardness (Sm, Er, Tm). Partial substitution of a tetravalent rare earth to produce crystal field anisotropy fluctuations apparently increases coercivity somewhat in the axis-preference compound SmFeNi₄, but has no effect in the plane-preferred compound TbFeNi₄.     

Slight Co-doping tuned magnetic and electric properties on cubic BaFeO3 single crystal

The single crystal of cubic perovskite BaFeO$_{3}$ shows multiple magnetic transitions and external stimulus sensitive magnetism. In this paper, a 5%-Co-doped BaFeO$_{3}$ (i.e. BaFe$_{0.95}$Co$_{0.05}$O$_{3})$ single crystal was grown by combining floating zone methods with high-pressure techniques. Such a slight Co doping has little effect on crystal structure, but significantly changes the magnetism from the parent antiferromagnetic ground state to a ferromagnetic one with the Curie temperature $T_{\rm C} \approx 120$ K. Compared with the parent BaFeO$_{3}$ at the induced ferromagnetic state, the saturated magnetic moment of the doped BaFe$_{0.95}$Co$_{0.05}$O$_{3}$ increases by about 10% and reaches 3.64 $\mu_{\rm B}$/f.u. Resistivity and specific heat measurements show that the ferromagnetic ordering favors metallic-like electrical transport behavior for BaFe$_{0.95}$Co$_{0.05}$O$_{3}$. The present work indicates that Co-doping is an effective method to tune the magnetic and electric properties for the cubic perovskite phase of BaFeO$_{3}$.     

Photoinduced phase transition in an organic radical crystal with room-temperature optical and magnetic bistability

A phase control by photoirradiation is successfully achieved in a spin-Peierls system of the organic radical crystal, 1,3,5-trithia-2,4,6-triazapentalenyl (TTTA), which exhibits optical and magnetic bistability around room temperature with a large hysteresis loop. A nanosecond laser pulse is found to induce a transition from a diamagnetic low-temperature phase to a paramagnetic high-temperature phase both inside (296 K) and outside (11 K) the hysteresis loop. Comparison of the excitation energy dependence between transition efficiency and photoconductivity suggests that the photoinduced transition is driven by suppression of the spin-Peierls instability by the accumulation of photocarriers.