Optical flip-flop and astable nultivibrator functions by vertical and direct integration of heterojunction phototransistors and laser diodes

A optoelectronic integrated device in which six heterojunction phototransistors and two laser diodes are vertically and directly integrated is developed to achieve new functions important for optical signal processing and optical computing. It is demonstrated that the device has a bistable flip-flop function, in which the output portion is switched alternately by the corresponding optical input. The function is extended to a tristable flip-flop, which is especially important for multistable logic, by using multiple HPTS and their internal optical and/or electrical couplings. Moreover, an astable multivibrator function or a self-oscillating function, is successfully demonstrated by applying the interconnecting technique to the bistable flip-flop function.     

Extrinsic base surface-passivated dual-emitter heterojunction phototransistors

N–p–n InGaP/GaAs Dual-Emitter HPTs (DEHPTs) with and without extrinsic base surface passivation were fabricated to investigate the influence of the surface leakage on the device’s optical performance. There are four operating regions appearing in the output characteristics of DEHPTs under illumination: negative-saturation, negative-tuning, positive-tuning and positive-saturation regions. The InGaP-passivated DEHPT (P-DEHPT), i.e. DEHPT with the extrinsic base surface passivated by InGaP, exhibits the maximum optical gains of 46.57, 46.86 and 47.39 while the non-passivated one (NP-DEHPT) shows ones of 32.02, 33.55 and 33.57 for optical powers of 8.62, 13.2 and 17.5 μW, respectively. However, the NP-DEHPT exhibits the larger peak gain-tuning efficiencies of 37.35, 41.03 and 44.10 compared to 12.76, 13.72 and 16.01 V ⁻¹ for the P-DEHPT for optical powers of 8.62, 13.2 and 17.5 μW, respectively. The better tuning efficiency makes the NP-DEHPT a possible low optical power optoelectronic application.     

Simulations of AlGaAs/GaAs heterojunction phototransistors

Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance.     

Investigation of optically generated kink effect in GaAs-based heterojunction phototransistors

Interaction between stacking faults (SFs) in pure Mg has been studied using density functional theory. The present results show that strong interaction between SFs can be extended up to several close-packed atomic layers. Especially, the interaction energies increase and decrease alternatively with the increase of SFs separation. Two distinct interaction models between SFs are proposed based on shear characteristics of SFs with different numbers of separating layers. The calculated electronic structures further reveal the underlying interaction mechanisms.     

激光剥离技术实现垂直结构GaN基LED

为改善GaN基发光二极管(Light-emitting diode,LED)的电学特性和提高其输出光功率,采用激光剥离技术,在KrF准分子激光器脉冲激光能量密度为400mJ/cm2的条件下,将GaN基LED从蓝宝石衬底剥离,结合金属熔融键合技术,在300℃中将GaN基LED转移至高电导率和高热导率的硅衬底,制备出了具有垂直结构的GaN基LED,并对其电学和光学特性进行了测试。结果表明:在110mA注入电流下,垂直结构器件的开启电压由普通结构的3.68V降低到了3.27V;在560mA注入电流下,器件输出光功率没有出现饱和现象;采用高电导率和高热导率的硅衬底能有效地改善GaN基LED的电学和光学特性。     

Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes

A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.     

High speed switching and power dissipation in heterojunction double barrier diodes

A theoretical analysis of the dynamical aspects of high speed switching between different stable states in bistable circuits containing quantum well devices with negative differential resistance is presented. A variational calculus method is introduced to obtain the minimal energy dissipation required for a given switching time. Results are presented for individual heterojunction double barrier diode and for pairs of heterojunction double barrier diodes which are connected in series.     

Scattering-parameter measurements of laser diodes

An accurate and simple technique for measuring the input reflection coefficient and the frequency response of semiconductor laser diode chips is proposed and demonstrated. All the packaging parasitics could be obtained accurately using a calibrated probe, and the impedance of the intrinsic diode chip is deduced from the directly measured reflection coefficient. The directly measured impedance of a laser diode is affected strongly by the short bond wire. In the frequency response (S ₂₁) measurements of semiconductor laser diode chips, the test fixture consists of a microwave probe, a submount, and a bond wire. The S-parameters of the probe could be determined using the short-open-match (SOM) method. Both the attenuation and the reflection of the test fixture have a strong influence on the directly measured frequency response, and in our proposed technique, the effect of test fixture is completely removed.     

Vertical electronic transport in novel semiconductor heterojunction structures

The investigation of vertical transport in semiconductor heterojunction systems has recently undergone a renaissance due to improved epitaxial techniques in a number of material systems. By using resonant tunneling, we can perform electronic spectroscopy not only of the double barrier structure itself, but of any system (with quantized well states) suitably coupled to a resonant tunneling spectrometer. In designing such systems, an important degree of freedom is introduced by utilizing multi-component structures; for example, a GaAs contact — AlGaAs barrier — InGaAs quantum well. In this structure, the high electron affinity of the quantum well creates a “deep” quantum well, in which we demonstrate that quantum well states can be hidden from transport. Finally, we present results from microfabricated quantum well structures (“quantum dots”) which are sufficiently small in the lateral dimension to introduce size effects. Telegraph noise due to the lateral size of these structures has been observed, and the first indications of lateral quantization in all three dimensions in a semiconductor quantum well are presented.     

Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes

Vertically aligned ZnO nanowires were successfully grown on the sapphire substrate by nanoparticle-assisted pulsed laser deposition (NAPLD), which were employed in fabricating the ZnO nanowire-based heterojunction structures. p-GaN/n-ZnO heterojunction light-emitting diodes (LEDs) with embedded ZnO nanowires were obtained by fabricating p-GaN:Mg film/ZnO nanowire/n-ZnO film structures. The current–voltage measurements showed a typical diode characteristic with a threshold voltage of about 2.5 V. Electroluminescence (EL) emission having the wavelength of about 380 nm was observed under forward bias in the heterojunction diodes and was intensified by increasing the applied voltage up to 30 V.     

Alternating current organic light emitting diodes based on polymer heterojunction

Most alternating current (ac) polymer EL (electroluminescent) devices to date are based on symmetrical structure. Here novel alternating current EL devices with asymmetric structure are successfully fabricated by using a hole type polymer PDDOPV [poly (2,5-bis (dodecyloxy)-phenylenevinylene)] and an electron type polymer PPQ [poly (phenyl quinoxaline)]. We report that performance of polymer devices with heterojunction in ac operation is not so sensitive to thickness of the two polymer layers as in direct current (dc) operation. This new advantage of ac operation mode over dc means easy production and cheap facilities in large-scale production in the near future. Different emission spectra are obtained when our ac devices operate in ac mode, forward and reverse bias. Emission spectrum at reverse bias includes two parts: one is from PDDOPV, the other is from PPQ.     

Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes

The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I–V and C–V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model.     

Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates

We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reactor by chemical vapour deposition (CVD) on the n-type 4H-SiC wafers. Details on the n-ZnO growth on 8-off 4H-SiC wafers, the quality of the layers and the nature of realized p–n structures are discussed. Mesa diode structures were fabricated. Al was sputtered through a circle mask with diameter 1 mm and annealed to form Ohmic contacts to p-SiC. Ohmic contacts to the n-ZnO were formed by 30 nm/300 nm Ti/Au sputtered by electron beam evaporation. Electrical properties of the structures obtained have been studied with Hall measurements, and current–voltage measurements (I–V). I–V measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained.     

Three-dimensional integration of microoptical components buried inside photosensitive glass by femtosecond laser direct writing

We report the three-dimensional (3D) integration of microoptical components such as microlenses, micromirrors and optical waveguides in a single glass chip by femtosecond (fs) laser direct writing. First, two types of microoptical lenses were fabricated inside photosensitive Foturan glass by forming hollow microstructures using fs laser direct writing followed by thermal treatment, successive wet etching and additional annealing. One type of lens is the cylindrical microlens with a curvature radius R of 1.0 mm, and the other is the plano-convex microlens with radius R of 0.75 mm. Subsequently, by the continuous procedure of hollow microstructure fabrication, a micromirror was integrated with the plano-convex microlens in the single glass chip. Further integration of waveguides was performed by internal refractive index modification using fs laser direct writing after the hollow structure fabrication of the microlens and the micromirror. A demonstration of the laser beam transmission in the integrated optical microdevice shows that the 3D integration of waveguides with a micromirror and a microoptical lens in a single glass chip is highly effective for light beam guiding and focusing. PACS 42.62.-b; 81.05.Kf; 42.82.Cr; 82.50.Pt; 42.79.Gn     

Cascaded synchronization of external-cavity laser diodes

An experimental demonstration of optical synchronization of a chain of chaotic external-cavity laser diodes is reported for what is believed to be the first time. The experiment is performed in the low-frequency-fluctuation regime.     

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管(Ⅱ)

如今，InGaN／GaN基量子阱发光二极管已经商业化，而且InGaN／GaN基量子阱激光二极管已实现连续波室温运转，使用寿命超过10000小时，虽然如此，但还没有完全搞清楚这些器件的发光机理．试验中通常使用连续输出He-Cd激光器（325nm）作光源，或者使用20—50mA注入电流来研究In—GaN量子阱样品或发光二极管光学性质，本文上篇研究了量子阱厚度与发光二极管发光功率的关系，lnGaN和GaN之间的晶格失配产生压电场，从而导致量子束缚斯塔克效应，而量子束缚斯塔克效应强