An accurate dynamical electron diffraction algorithm for reflection high-energy electron diffraction

The conventional multislice method (CMS) method, one of the most popular dynamical electron diffraction calculation procedures in transmission electron microscopy, was introduced to calculate reflection high-energy electron diffraction (RHEED) as it is well adapted to deal with the deviations from the periodicity in the direction parallel to the surface. However, in the present work, we show that the CMS method is no longer sufficiently accurate for simulating RHEED with the accelerating voltage 3–100 kV because of the high-energy approximation. An accurate multislice (AMS) method can be an alternative for more accurate RHEED calculations with reasonable computing time. A detailed comparison of the numerical calculation of the AMS method and the CMS method is carried out with respect to different accelerating voltages, surface structure models, Debye–Waller factors and glancing angles.     

Fast measurement of rocking curve of reflection high-energy electron diffraction by using quasi-1D convergent beam

In order to investigate dynamic change in surface structure, we tried to measure the rocking curve of reflection high-energy electron diffraction (RHEED) by using a quasi-1D convergent beam method, which means a superposition of a hundred RHEED patterns at different glancing angles on one image. After we have checked the experimental accuracy, it is confirmed that the measurement time is shortened to 0.3 s by using this method. We also show an application of this method to a real time observation of surface segregation of B atoms while a highly B-doped Si is annealed.     

Surface structure of In/Si(1 1 1) studied by reflection high-energy positron diffraction

We have investigated a quasi-one-dimensional structure of In/Si(1 1 1) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 Å and 0.55 Å from the Si zigzag chain in both 4 × 1 (210 K) and 8 × 2 (60 K) phases.     

Influence of boron on the initial stages of Si molecular beam epitaxy on Si(1 1 1) studied by reflection high-energy electron diffraction

The influence of boron as a function of coverage on molecular beam epitaxial Si growth on Si(1 1 1) surface was systematically studied by reflection high-energy electron diffraction. At boron coverage above 0.3 monolayer regular oscillations occur with a period typically for two-bilayers, whereas at lower boron coverage a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. This behaviour can be attributed to a superposition of a bilayer and a two-bilayer dominated growth mode. The appearance of these two growth modes is discussed in terms of an initial surface defect-induced nucleation of bilayer-high Si islands and the formation of two-bilayers-high Si islands on top of the van der Waals like boron-covered surface, respectively. We suggest that these surface defects are of intrinsic nature, and their number only depends on the amount of boron at the surface. The oscillations become regular during further Si deposition with a bilayer period, indicating a diminishing influence of the layer/substrate interface on the growth processes.     

关于RHEED振荡技术优化GaAs(110)量子阱生长的研究

在GaAs(110)衬底上生长的半导体材料有诸多优良性能，使得在非极性GaAs(110)衬底上获得高质量各类异质结材料，成为近年来分子束外延生长关注的课题.考虑GaAs(110)表面是Ga和As共面，最佳生长温度窗口很小；反射式高能电子衍射的(1×1)再构图案对生长温度和V/Ⅲ束流比不敏感，难于通过观察再构图案的变化，准确地找到最佳生长条件.作者在制备GaAs(110)量子阱过程中，观察到反射式高能电子衍射强度振荡呈现出的单双周期变化.这意味着不同工艺条件下，在 GaAs(110)衬底上量子阱有单层和双层两种生长模式.透射电子显微镜和室温光致荧光光谱测量结果表明：在双层生长模式下量子阱样品光学性能较差，而在单层生长模式下量子阱光学性能较好，但是界面会变粗糙.利用这一特点，我们采用反射式高能电子衍射强度振荡技术，找到了一种在GaAs(110)衬底上生长高质量量子阱的可行方法. 关键词： 反射高能电子衍射 量子阱 分子束外延     

SrTiO3同质外延过程中的反射高能电子衍射图案分析

在激光分子束外延实验中,用RHEED原位监测了SrTiO3基片初始、退火以及同质外延过程中的表面形态.通过对RHEED图案分析,获取了表面面内的晶格常数振荡与衍射条纹的半高宽振荡现象,前者是由退火重构表面与薄膜之间的界面造成的,后者与二维岛边界的弛豫相关.另外还观察到了等离子体对入射电子束的影响而导致的RHEED强度振荡行为的相位移现象. 关键词： 反射高能电子衍射 SrTiO3 表面晶格常数及衍射强度振荡     

Splitting the plasmon peak in high-energy reflection electron energy loss experiments

Elastic scattering of energetic electrons over large angles (in this study 40 keV and 120°$120°$) implies momentum and hence energy transfer from an electron to a nucleus. Due to the large mass of the nucleus (relative to the mass of an electron) this energy transfer is small, but it has recently been shown that it can be resolved in a modern spectrometer. Hence the elastic peak of an overlayer/substrate system splits into different components corresponding to atoms with different mass. Here we extend this type of experiment to the plasmon part of a reflection energy loss spectroscopy (REELS) spectrum. It is shown that, for suitable systems, the plasmon peak of an overlayer/substrate system is split by the same amount as the elastic peak. This is a consequence of the fact that detection of an electron in REELS always requires a large-angle elastic scattering event. Moreover, we show that the relative intensity of the plasmon components contains information on the depth distribution of the scatterers.     

System for recording and analysis of reflection high-energy electron diffraction patterns

An efficient and fast system for recording and analysis of reflection high-energy electron diffraction (RHEED) patterns is described. The software developed for this system includes three program packages: one for operating in the single-window mode, one for operating in the four-window mode, and one for the linear regime. Examples are given of the use of the system for monitoring and control of growth of III–V semiconductor compounds by molecular-beam epitaxy. Using this system, we discovered an effect wherein a periodic splitting of the RHEED peaks occurs during the growth of GaAs (100). Zh. Tekh. Fiz. 67, 111–116 (August 1997)     

Metal interface formation studied by high-energy reflection energy loss spectroscopy and electron Rutherford backscattering

We demonstrate that high-energy, high-resolution reflection electron energy loss spectroscopy can provide unique insights into interface formation, especially for the case where an extended interface is formed. By changing the geometry and/or electron energy the electronic structure can be probed over a range of thicknesses (from 10s of Å to more than 1000 Å). At the same time one resolves the elastically scattered electrons into different components, corresponding to scattering of atoms with different mass (so-called ‘electron Rutherford backscattering’). Thus these high-energy REELS/elastic scattering experiments obtain information on both the electronic structure and the atomic composition of the overlayer formed.     

Kinematic simulation of convergent beam low-energy electron diffraction patterns

Kinematic simulations are used to investigate the geometrical properties of convergent beam low-energy electron diffraction patterns from an Si(0 0 1) surface. Compression of a low-energy electron microscope immersion lens is included explicitly and the sensitivity of patterns to surface reconstruction and dimer buckling is investigated. Key pattern features and whole pattern symmetries are identified from the simulations and interpreted geometrically. Advantages over conventional low-energy electron diffraction techniques are identified.     

分子束外延生长InGaN／A1N量子点的组分研究

报道了分子束外延生长的绿光波段InGaN／A1N量子点材料,并综合考虑InGaN量子点的应变弛豫,以及应力和量子限制斯塔克效应对量子点发光波长的影响,提出了一种结合反射式高能电子衍射原位测量与光致荧光测量确定InGaN量子点组分的方法．     

Structural analysis of Si(1 1 1)-√21 × √21-Ag surface by reflection high-energy positron diffraction

The atomic structure of Si(1 1 1)-√21 × √21-Ag surface, which is formed by the adsorption of small amount of Ag atoms on the Si(1 1 1)-√3 × √3-Ag surface, was determined by using reflection high-energy positron diffraction. The rocking curve measured from the Si(1 1 1)-√21 × √21-Ag surface was analyzed by means of the intensity calculations based on the dynamical diffraction theory. The adatom height of the extra Ag atoms from the underlying Ag layer was determined to be 0.53 Å with a coverage of 0.14 ML, which corresponds to three atoms in the √21 × √21 unit cell. From the pattern analyses, the most appropriate adsorption sites of the extra Ag atoms were proposed.     

磁控溅射制备ZnO薄膜及其声表面波特性

通过射频磁控溅射技术在GaAs，Au/GaAs，Si和玻璃基片上成功制备了ZnO多晶薄膜，利用X射线衍射对ZnO薄膜的取向、结晶性进行了表征，结果表明ZnO薄膜呈完全c轴取向，Au缓冲层可以有效地改善ZnO薄膜的晶体质量，X射线摇摆曲线结果表明ZnO(002)衍射峰的半高宽仅为2.41°，同时发现Au缓冲层的结晶质量对ZnO薄膜的c轴取向度有很大影响，通过扫描电子显微镜对ZnO/GaAs和ZnO/Au/GaAs薄膜的表面形貌进行了观测，利用网络分析仪对IDT/ZnO/GaAs薄膜的声表面波特性进行了测量. 关键词： ZnO薄膜 X射线衍射 声表面波     

基于X射线衍射的GaN薄膜厚度的精确测量

结合Williamson-Hall plot方法和线型分析方法的优点,提出了一种有效分离有限晶粒尺寸和非均匀应力等X射线衍射展宽效应的方法,可以用于GaN外延层厚度等参数的快速精确测量.用该方法对一系列在蓝宝石衬底上生长的厚度在0.7—4.2μm的GaN外延膜进行了测量,并与椭圆偏振光谱法测量结果进行了比较,结果表明其差别<4%,反应了这种方法的准确性. 关键词： GaN薄膜 厚度测量 X射线衍射     

高能电子辐照绝缘厚样品的表面电位动态特性

采用数值计算和实验测量相结合的方法, 阐明了高能电子束照射下绝缘厚样品的表面电位和电子产额动态特性. 结果表明: 由于电子在样品内部的散射和输运, 沿着深度方向, 空间电位先缓慢下降到最小值, 然后逐渐升高并趋近于零; 随着电子束照射, 样品的表面电位逐渐下降, 可至负千伏量级, 电子总产额逐渐增大至一个接近于1的稳定值; 电子束停止照射后, 长时间放置下, 表面电位将逐渐升高, 但带电并不会消除; 表面电位随电子束能量的升高近似线性下降, 随入射角的增大而升高, 而随样品厚度的增大仅略有下降.     

高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜

在超高真空分子束外延（MBE）生长技术中，反射式高能电子衍射仪（RHEED）能实时显示半导体和金属外延生长过程，给出薄膜表面结构和平整度的信息，成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导（YBa₂Cu₃O₇） 、铁电薄膜（Sr_1-xBa_x TiO₃）及它们的同质和异质外延结构的生长机理，获得高质量的符合各种应用 需要的氧化 物多层薄膜结构，在常规的制备氧化 关键词： 高温超导薄膜 RHEED     

表面损伤衍射双向反射分布函数模型建立及分析

建立了包括划痕和坑点在内的表面损伤的衍射双向反射分布函数(BRDF)模型,并分析了模型在各领域中的应用.通过使用非傍轴标量衍射理论,提出了采用相干窗口函数滤波的方法得到非相干光条件下的表面损伤衍射BRDF模型,得到了表面划痕和坑点的散射特性.该方法在表面损伤检测、表面损伤杂光分析以及图像渲染技术等领域都有重要的应用价值...     

Surface segregation of aluminum atoms on Cu-9 at.% Al(1 1 1) studied by Auger electron spectroscopy and low energy electron diffraction

Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) were applied to investigate the segregation of aluminum atoms on a Cu-9 at.% Al(1 1 1) surface. We observed that the Al concentration in the top layer ranged between about 9 and 36 at.% after the sample we used was annealed at different temperatures. The phenomenon of Al atoms segregating on the surfaces was explained well by considering the diffusion length of Al atoms in bulk Cu. LEED measurements showed that R30° structures grew as the concentration of Al atoms increased. The segregation phenomena on surfaces resulted in a stable two-dimensional Cu₆₇Al₃₃ alloy phase in the top layer.     

Bunch evolution study in optimization of MeV ultrafast electron diffraction

Megaelectronvolt ultrafast electron diffraction (UED) is a promising detection tool for ultrafast processes. The quality of diffraction image is determined by the transverse evolution of the probe bunch. In this paper, we study the contributing terms of the emittance and space charge effects to the bunch evolution in the MeV UED scheme, employing a mean-field model with an ellipsoidal distribution as well as particle tracking simulation. The small transverse dimension of the drive laser is found to be critical to improve the reciprocal resolution, exploiting both smaller emittance and larger transverse bunch size before the solenoid. The degradation of the reciprocal spatial resolution caused by the space charge effects should be carefully controlled.     

Structural analysis of Si(1 1 1)-√21 × √21-(Ag, Au) surface by using reflection high-energy positron diffraction

The Au adsorption induced √21 × √21 super-lattice structure on the Si(1 1 1)-√3 × √3-Ag structure has been investigated using reflection high-energy positron diffraction. The height of the Au adatom was determined to be 0.59 Å from the underlying Ag layer from the rocking curve analysis with the dynamical diffraction theory. The adatoms were preferentially situated at the center of the large Ag triangle of the inequivalent triangle structure of the Si(1 1 1)-√3 × √3-Ag substrate. From the intensity distribution in the fractional-order Laue zone, the in-plane coordinate of the Au adatoms was obtained.