氢负离子在均匀电场和金属面附近的光剥离研究

利用闭合轨道理论,计算了氢负离子在均匀电场和金属面附近的光剥离截面.结果表明,在均匀电场的基础上加上金属面之后,在电离阈附近氢负离子的光剥离截面发生了很大的变化,和仅有均匀电场存在时的光剥离截面相比,截面的振荡幅度增大,振荡频率减小.并且在电场强度相同时,随着金属面与氢负离子距离的不断增大,光剥离截面振荡的幅度不断减小,振荡的频率不断增大,当金属面和氢负离子的距离增大到一定值时,金属面的影响消失,氢负离子的光剥离截面趋近于只有电场存在时的情况.这一结果对于研究负离子体系在界面附近的光剥离问题具有一定的参考价值.     

氢负离子在磁场和电介质表面附近光剥离的研究

利用闭合轨道理论, 研究了变化的磁场和不同电介质表面对氢负离子光剥离截面的影响, 并推导出了该体系下的光剥离截面公式. 结果发现, 氢负离子的光剥离截面不仅与磁场的强度有关, 而且还与电介质常数有关. 当氢负离子到电介质表面的距离和电介质常数一定时, 体系的光剥离截面中的振荡随磁场的变化而明显变化. 随着磁场强度的 增大, 体系的闭合轨道数目增多, 光剥离截面的振荡越来越复杂. 当氢负离子到电介质表面的距离和磁场强度一定时, 电介质常数的变化对光剥离截面的影响也很重要, 随着电介质常数的增大, 体系的闭合轨道数目增多, 光剥离截面的振荡也变得越来越复杂. 因此, 可以通过改变磁场强度和电解质常数来调整负离子的光剥离截面. 此结果 对于研究负离子体系在表面附近和外场中的光剥离问题具有一定的参考价值.     

Magnetic field effect in photodetachment from negative ion in electric field near metal surface

Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can produce a significant effect on the photodetachment of negative ion near a metal surface. Besides the closed orbits previously found by Du et al. for the H in the electric field near a metal surface (J. Phys. B 43 035002 (2010)), some additional closed orbits are produced due to the effect of magnetic field. For a given ion-surface distance and an electric field strength, the cross section depends sensitively on the magnetic field strength. As the magnetic field strength is very small, its influence can be neglected. With the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillation in the cross section becomes much more complex. Therefore we can control the photodetachment cross section of the negative ion by changing the magnetic field strength. We hope that our results may guide future experimental studies for the photodetachment process of negative ion in the presence of external fields and surfaces.     

Photodetachment microscopy of a hydrogen negative ion in an electric field near a metal surface

According to the semi-classical theory, we study the photodetachment microscopy of H- in the electric field near a metal surface. During the photodetachment, the electron is photo-detached by a laser and the electron is drawn toward a position-sensitive detector. The electron flux distribution is measured as a function of position. Two classical paths lead the ion to any point in the classically allowed region on the detector, and waves traveling along these paths produce an interference pattern. If the metal surface perpendicular to the electric field is added, we find that the interference pattern is related not only to the electron energy and the electric-field strength, but also to the ion-surface distance. In addition, the laser polarization also has a great influence on the electron flux distribution. We present calculations predicting the interference pattern that may be seen in experiment. We hope that our study can provide a new understanding of the electron flux distribution of negative ions in an external field and surface, and can guide future experimental research on negative ion photo-detachment microscopy.     

The influence of interface modifier on photodetachment of negative ions in an electric field near a metal surface

Based on closed-orbit theory,the influence of an interface modifier on the photodetachment of H- in an electric field near a metal surface is studied.It is demonstrated that the interface strengthens the oscillations in the photodetachment cross section.However,when the electric field environments are different,the strengthening oscillations are caused by different sources.When the electric field direction is upward,the interface enhances the oscillations by shortening the period and the action of the closed orbit.When the electric field direction is downward,the interface strengthens the oscillations either by extending the coherent energy range or by increasing the total number of the closed orbits.We hope that our results will be conducive to the understanding of the photodetachment process of negative ions near interfaces,cavities and ion traps.     

Photodetachment dynamics of H~- ion in a harmonic potential plus a time-dependent oscillating electric field

The photodetachment dynamics of H~- ion in a harmonic potential plus an oscillating electric field is studied using the time-dependent closed orbit theory. An analytical formula for calculating the photodetachment cross section of this system is put forward. It is found that the photodetachment cross section of this system is nearly unaffected for the weak oscillating electric field strength, but oscillates complicatedly when the oscillating electric field strength turns strong. In addition, the frequency of the harmonic potential and the oscillating electric field(the frequency of the harmonic potential and the frequency of the oscillating electric field are the same in the paper, unless otherwise stated.) can also affect the photodetachment dynamics of this system. With the increase of the frequency in the harmonic potential and the oscillating electric field, the number of the closed orbits for the detached electrons increased, which makes the oscillatory structure in the photodetachment cross section much more complex. Our study presents an intuitive understanding of the photodetachment dynamics driven by a harmonic potential plus an oscillating electric field from a space and time dependent viewpoint.This study is very useful in guiding the future experimental research for the photodetachment dynamics in the electric field both changing with space and time.     

The influence of electric field on the photodetachment of H- near a metal surface

The influence of electric field on the photodetachment of H-near a metal surface is investigated based on the closed-orbit theory.It is found that the photodetachment of H-near a metal surface is not only related to the electric field strength but also to the electric field direction.If the electric field is along the +z axis,it can strengthen the oscillation in the photodetachment cross section.However,if the electric field is along the -z axis,since the direction of electric field force is opposite to that of static-image force caused by the metal surface,the situation becomes much more complicated.When the electric field is very weak,its influence can be neglected.The photodetachment cross section is nearly the same as that when a single metal surface exists.When the electric field strength is strong enough,the electric field force is able to counteract the metallic attraction,therefore no closed orbit is formed.If the electric field continues to increase until its influence becomes dominant,the photodetachment cross section approaches the case of the photodetachment of H- in an electric field.Our results may be useful for guiding future experimental studies on the photodetachment of negative ions near surfaces.     

激光脉冲对氢负离子在金属面附近光剥离的影响

利用闭合轨道理论和金属面附近氢负离子的双脉冲光剥离截面的计算公式,计算了氢负离子在金属面附近激光脉冲作用下的光剥离截面.计算结果表明:如果脉冲宽度远大于闭合轨道的回归周期时,它对光剥离截面的影响很小;当脉冲宽度小于闭合轨道的周期或者可以和闭合轨道的周期相比较时,光剥离截面的振荡幅度大大地减弱.光剥离截面除了与脉冲宽度有关外,还与双脉冲之间的时间延迟、相位差有关.对于某些相位差, 双脉冲光剥离截面的取值增大; 而对于另外一些相位差, 光剥离截面的取值减小.因此,可以利用脉冲激光来控制氢负离子在表面附近光剥离 关键词： 激光脉冲 光剥离截面 金属面 闭合轨道理论     

Photodetachment microscopy of the hydrogen negative ion in electric field near a metal surface

According to the semi-classical theory, we study the photodetachment microscopy of H^- in the electric field near a metal surface. During the photodetachment, the electron is photo-detached by a laser and the electron is drawn toward a position-sensitive detector. The electron flux distribution is measured as a function of position. Two classical paths lead the ion to any point in the classically allowed region on the detector, and waves traveling along these paths produce an interference pattern. If the metal surface perpendicular to the electric field is added, we find that the interference pattern is related not only to the electron energy and the electric-field strength, but also to the ion--surface distance. Besides, the laser polarization also has a great influence on the electron flux distribution. We present calculations predicting the interference pattern that may be seen in experiment. We hope that our study can provide a new understanding of the electron flux distribution of negative ions in external field and surface, and can guide the future experimental research on the negative ion photo-detachment microscopy.     

Photodetachment of H- Near a Dielectric Surface

Using the closed orbit theory, the photodetachment cross section of H- near a dielectric surface has been derived and calculated. The results show that the dielectric surface has great influence on the photodetachment process of negative ion near the ionization threshold. Above the ionization threshold, the photodetachment cross section starts to oscillate. With the increase of the energy, the oscillating amplitude decreases and the oscillating frequency increases. The oscillation in the photodetachment cross section of H- in the presence of a dielectric surface is either larger or smaller than the photodetachment of H- without the surface. As the photon energy is larger than the critical value Epc, the oscillatory structure disappeared and the cross section approaches to the case of the photodetachment of H- without any external fields. For a given detached-electron energy, the photodetachment cross section becomes decreased with the increase of the ion-surface distance. Besides, the dielectric constant has great influence on the photodetachment of H-. With the increase of the dielectric constant, the oscillation in the cross section becomes increased. As the dielectric constant increases to infinity, the cross section is the same as the photodetachment of H- near a metal surface. This study provides a new understanding on the photodetachment process of H- in the presence of a dielectric surface.     

Photodetachment of H- near an elastic surface in a magnetic field

This paper investigates the photodetachment of the negative hydrogen ion H near an elastic wall in a magnetic field.The magnetic field confines the perpendicular motion of the electron,which results in a real three-dimensional well for the detached electron.The analytical formulas for the cross section of the photodetachment in the threedimensional quantum well are derived based on both the quantum approach and closed-orbit theory.The magnetic field and the elastic surface lead to two completely different modulations to the cross section of the photodetachment.The oscillation amplitude depends on the strength of the magnetic field,the ion-wall distance and the photon polarization as well.Specially,for the circularly polarized photon-induced photodetachment,the cross sections display a suppressed(E E th) 1/2 threshold law with energy E in the vicinity above Landau energy E th,contrasting with the(E E th) 1/2 threshold law in the presence of only the magnetic field.The semiclassical calculation fits the quantum result quite well,although there are still small deviations.The difference is attributed to the failure of semiclassical mechanics.     

氢负离子在梯度电场中光剥离的波包动力学研究

利用含时微扰论和闭合轨道理论相结合的方法, 给出了氢负离子在梯度电场中自关联函数的计算公式, 并且对体系的自关联函数进行了计算和分析. 重点探讨了激光脉冲的宽度、梯度电场中背景电场强度及电场梯度对氢负离子体系的自关联函数的影响. 研究结果表明, 当激光脉冲的脉冲宽度较短, 远小于剥离电子的闭合轨道的周期时, 量子波包的回归现象显著, 自关联函数中会出现一系列比较明显的回归峰, 这是由于沿闭合轨道返回的电子波包和出射的电子波包之间产生干涉形成的. 但是随着激光脉冲宽度的增加, 量子波包的回归现象减弱. 当脉冲宽度和闭合轨道的周期相差不是很大时, 自关联函数中的回归峰逐渐变宽, 振荡渐趋平缓, 相邻的峰之间发生相互干涉, 从而导致对应关系消失. 除此之外, 我们还发现梯度电场中背景电场强度和电场梯度对体系的自关联函数也会发生显著的影响. 随着背景电场强度和电场梯度的增加, 剥离电子的闭合轨道的周期变短, 自关联函数中回归峰的个数逐渐增加, 量子回归现象增强. 因此, 我们可以通过改变脉冲的宽度、外加电场强度的大小对氢负离子发生光剥离的自关联函数进行调控. 我们的结果对于实验研究原子或离子体系在外场中的波包动力学性质可以提供一定的参考价值.     

Quantum calculations for photodetachment cross sections of H-in an inhomogeneous electric field

We calculate the photodetachment cross sections of H in a gradient electric field based on traditional quantum approach. The system provides a rare example that the formulas for the cross sections can be explicitly derived by both the quantum approach and closed-orbit theory. The quantum results are compared with those of the closed-orbit theory. The correct phase values in the closed-orbit theory are essential and necessary to produce accurate cross sections. Our quantum results remove some previous ambiguities in assigning the phase values in the closed-orbit theory (G. C. Yang and M. L. Du 2007 Phys. Rev. A 75 029904E).     

Temperature variation of electric field gradient in scandium metal

Electric field gradient (EFG) in scandium metal has been evaluated at temperatures 11 K and 293 K using band wave functions determined in the temperature dependent model potentials. The results of net EFG obtained are −3.756×10¹³ esu/cm³ and −8.009×10¹³esu/cm³ at 11 K and 293 K respectively. The agreement with available experimental result is reasonably good.     

氢负离子在电介质球面附近的光剥离研究

利用镜像法结合半经典闭合轨道理论,对氢负离子在电介质球面附近的光剥离进行了研究.首先利用镜像法分析了剥离电子在电介质球内的镜像电荷分布情况,然后给出了体系的哈密顿量.通过求解哈密顿正则方程,找到了剥离电子在电介质球面附近运动时的闭合轨道.借助于半经典闭合轨道理论,推导出了体系的光剥离截面,并且对光剥离截面进行了计算和分析.计算结果表明,氢负离子在电介质球面附近的光剥离截面不仅与入射光子的能量有关,而且还与电介质球面的介电常数有关.对于给定的电介质球面,随着入射光子的能量增加,光剥离截面的振荡振幅减小、振荡频率增加.当入射光子的能量增加到某一临界值时,光剥离截面的振荡结构消失.除此之外,随着电介质球面介电常数的增大,光剥离截面的振荡结构变得更加复杂.当电介质常数增大到无穷大时,体系的光剥离截面和氢负离子在金属球面附近的光剥离截面一致.因此,可以通过改变入射光子的能量及电介质球面的介电常数对氢负离子在电介质球面附近的光剥离截面进行调控研究.研究结果对负离子体系在电介质球面附近的光剥离的实验研究可以提供一定的理论指导和参考价值.     

氢负离子在磁场和金属面附近电子通量分布的研究

利用半经典开轨道理论, 研究了磁场和金属面附近氢负离子的剥离电子通量分布, 并揭示了电子通量分布中的振荡结构与经典轨道之间的关系.固定离子到金属面的距离, 研究了不同的磁场强度对电子通量分布的影响. 结果表明, 由于与电子通量分布相联系的剥离电子的经典轨迹增加, 随着磁场强度的增加, 通量分布变得复杂. 此外发现剥离电子的能量变化也会影响电子通量分布. 因此可以通过改变磁场强度大小和剥离电子的能量来调控剥离电子通量分布和干涉图样. 研究结果对于理解负离子在外场、表面附近的电子流通量和剥离电子干涉图样问题以及将来实验研究负离子的光剥离显微问题都可以提供一定的参考. 关键词： 开轨道理论 电子通量 金属面 磁场     

Photodetachment of H-- in an electric field between two parallel interfaces

By using the closed orbit theory, the photodetachment cross section of H- in a static electric field between two parallel elastic interfaces is derived and calculated. It is found that the photodetachment cross section depends on the electric field and the distance between the ion and the elastic interface. The oscillation of the cross section becomes more complicated than in the case of H- near one elastic interface. The results show that near the detachment threshold, the influence of the additional interface can be neglected. But with the increase of the energy, its influence becomes great. At some energies, the cross sections display sharp peaks, contrasting with the staircase structure when only one interface exists. This study provides a new understanding of the photodetachment process of H- in the presence of external field and interfaces.     

Electric field gradient in transition metal — scandium

Electric field gradient inhcp transition metal scandium has been calculated as the sum of contributions from lattice ions and conduction electrons. For the lattice contributionq _latt, a point-charge model has been assumed. The contribution from conduction electronsq _el, on the other hand, has been evaluated by carrying out an energy-band calculation using non-local transition-metal model potential. The results obtained are:q _el=−106.11×10¹³ esu/cm³ andq _latt=122.17×10¹³ esu/cm³. The net field gradient (q _el+q _latt) of 16.06×10¹³ esu/cm³ agrees quite well with the experimental result, |q _expt|=13×10¹³ esu/cm³. Directions of further improvement in the theory are discussed.