Synthesis, characterization and melt processing of Y1−x(Yb0.9Nd0.1)xBa2Cu3Oz superconductors

Effects of a combined substitute of Yb and Nd on Y site on the superconducting properties of YBa₂Cu₃O_y have been studied. We synthesized Y_1−x(Yb_0.9Nd_0.1)_xBa₂Cu₃O_z compound with x = 0.2, 0.4, 0.6, 0.8 and 1.0. Here, the ratio of Yb–Nd was fixed to be 9:1 for obtaining 123 phase without secondary phases. The melt processing thermal profiles for Y_1−x(Yb_0.9Nd_0.1)_xBa₂Cu₃O_z with x = 0.2 and 0.4 and the addition of 40 mol% {Y_1−x(Yb_0.9Nd_0.1)_x}₂BaCuO₅ and 0.5 wt% Pt in air were determined on the basis of the thermal analysis results. All samples showed a low grain growth rate, particularly for high x values, which may be partially ascribed to un-optimized thermal schedules. Although almost all the samples exhibited low J_c values, the sample with x = 0.2 exhibited T_c of 88.8 K and a relatively high J_c value of 16,000 A/cm² at 77 K for H//c-axis.     

Structural studies and T c dependence in La2−x Dy x Ca y Ba2Cu4+y O z type mixed oxide superconductors

A new series of mixed oxide superconductors with the stoichiometric composition La_2−x Dy _x Ca _y Ba₂Cu_4+y O _z (x=0.0 − 0.5, y=2x) has been studied for structural and superconductiong properties. Our earlier studies on La_2−x (Y/Er) _x Ca _y Ba₂Cu_4+y O _z series, show a strong dependence of T _c on hole concentration (p _sh). In the present work, the results of the analysis of the neutron diffraction measurements at room temprerature on x=0.3 and 0.5 samples are reported. It is interesting to know that Ca substitutes for both La and Ba site with concomitant displacement of La onto Ba site. Superconductivity studies show that maximum T _c is obtained for x=0.5, y=1.0 sample (T _c ∼ 75 K), for La_1.5Dy_0.5Ca₁Ba₂Cu₅O _z (La-2125).     

Reduced anti-ferromagnetism promoted by Zn 3d substitution at CuO2 planar sites of Cu0.5Tl0.5Ba2Ca3Cu4O12−δ superconductors

The role of charge carriers in ZnO₂/CuO₂ planes of Cu_0.5Tl_0.5Ba₂Ca₃Cu_4−yZn_yO_12−δ material in bringing about superconductivity has been explained. Due to suppression of anti-ferromagnetic order with Zn 3d¹⁰ (S=0) substitution at Cu 3d⁹ sites in the inner CuO₂ planes of Cu_0.5Tl_0.5Ba₂Ca₃Cu₄O_12−δ superconductor, the distribution of charge carriers becomes homogeneous and optimum, which is evident from the enhanced superconductivity parameters. The decreased c-axis length with the increase of Zn doping improves interlayer coupling and hence the three dimensional (3D) conductivity in the unit cell is enhanced. Also the softening of phonon modes with the increased Zn doping indicates that the electron–phonon interaction has an essential role in the mechanism of high-T_c superconductivity in these compounds.     

The experimental and theoretical investigation of vibration spectra in ferroelectric semiconductor SbSBrxI1−x crystals

The vapor grown SbSBr_xI_1−x (x=0.1; 0.5; 0.9) crystals with clear mirror surfaces have been used for infrared reflection measurements with Fourier spectrometer. The vibration frequencies along c(z)-axis have been derived from Kramers–Kroning and optical parameters fitting analysis of the experimental reflectivity spectra at T=300 K. The theoretical vibration spectra of SbSBr_xS_1−x (x=0.1; 0.5; 0.9) crystals in paraelectric phase (T=300 K) along c(z)-axis have been determined in quasiharmonic approximation by diagonalization of dynamical matrix. The theoretical vibration spectra of these crystals in a–b(x−y) plane have been determined in harmonic approximation. In this work we discuss the nature of anharmonism in SbSBr_xI_1−x crystals along the c(z)-axis.     

Growth and properties of air-processed GdBa2Cu3O7−δ superconductors with fined Gd2BaCuO5 and Gd2Ba4CuFeOy additions

We have succeeded in synthesizing a powder form of Gd₂Ba₄CuFeO_y (Gd2411) in air. GdBa₂Cu₃O_7−δ (Gd123)/Gd₂BaCuO₅ (Gd211) precursor powders added with different amounts of Gd₂Ba₄CuFeO_y (x = 0, 0.002, 0.004, 0.02) in molar ratio to Gd123 have been fabricated successfully into the form of large, single grains by the top seeded melt growth (TSMG) process. The relation between the additions amounts of Gd2411/Gd211 and critical current density (J_C) was analyzed. We found Gd2411 particles stably exist in the Gd123 matrix without degradation of superconducting properties owing to the existence of the Fe magnetic ion. The trapped field was observed to increase significantly compared with the bulk without Gd2411 additions.     

Structure, ferroelectric and piezoelectric properties of (Bi1−x−yNa0.925−x−yLi0.075)0.5BaxSryTiO3 lead-free piezoelectric ceramics

Lead-free multi-component ceramics (Bi_1−x−yNa_{0.925−x−y}Li_0.075)_0.5Ba_xSr_yTiO₃ have been prepared by an ordinary sintering technique and their structure and electrical properties have been studied. All the ceramics can be well-sintered at 1100 °C. X-ray diffraction patterns shows that Li⁺, Ba²⁺ and Sr²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure, and a morphotropic phase boundary (MPB) is formed at 0.04 < x < 0.08. As compared to pure Bi_0.5Na_0.5TiO₃ ceramic, the coercive field E_C of the ceramics decreases greatly and the remanent polarization P_r of the ceramics increases significantly after the formation of the multi-component solid solution. Due to the MPB, lower E_C and higher P_r, the piezoelectricity of the ceramics is greatly improved. For the ceramics with the compositions near the MPB (x = 0.04–0.08 and y = 0.02–0.04), piezoelectric coefficient d₃₃ = 133–193 pC/N and planar electromechanical coupling factor k_P = 16.2–32.1%. The depolarization temperature T_d reaches a minimum value near the MPB. The temperature dependences of the ferroelectric and dielectric properties suggest that the ceramics may contain both the polar and non-polar regions at temperatures near/above T_d.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

Mechanism responsible for the modification of the band spectrum and superconducting properties in the Tl2Ba2Ca1 ? x Y x Cu2 ? y Co y O z system

The modification of the temperature dependences of the thermopower coefficient for the Tl₂Ba₂Ca_{1 − x} Y _x Cu_{2 − y} Co _y O _z system is investigated as a function of the dopant content. The model of an asymmetric narrow band is shown to be applicable to high-temperature superconductors in the thallium system. The parameters of the band spectrum and charge carrier system for samples of a close-to-optimum composition are determined by analyzing the temperature dependences of the thermopower coefficient within the narrow band model. The character and mechanism of their variation in the course of the transition to an underdoped regime are analyzed together with the dynamics of changes in the superconducting properties. The critical temperature T _c is found to correlate with the effective conduction-band width W _D . It was shown that the dependence T _c (W _D ) for Tl₂Ba₂Ca_{1 − x} Y _x Cu_{2 − y} Co _y O _z has a close-to-universal character, but the suppression of T _c upon the broadening of the band occurs faster than in the case of the yttrium system. Original Russian Text ? O.A. Martynova, V.é. Gasumyants, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 9, pp. 1537–1542.     

双掺杂BaxAgyCa3-x-yCo4O9氧化物的织构与电输运性能

采用柠檬酸溶胶凝胶和放电等离子烧结制备了Ca位双掺杂型的Ba_xAg_yCa_3-x-yCo₄O₉烧结体,利用X射线衍射仪、扫描电子显微镜、电阻率测试仪等研究了烧结体相组成、取向度、织构及电性能.结果表明：含Ag的掺杂试样中出现了偏离化学计量比分布的Ag单质,掺杂试样取向度随Ba与Ag掺杂量之比x/y的增大而提高,含Ag的掺杂试样取向度低于未掺杂试样,不含Ag的掺杂试样取向度高于未掺杂试样.x=y=01的试样导电机理发生变化.Ba,Ag掺杂量相等的试样保持较低取向度的同时具有较低的电阻率,在973 K时达到最低值（73 mΩcm）,而取向度最低的Ag单掺杂试样电阻率在所有试样中最低,在973 K时为63 mΩcm. 关键词： 3Co₄O₉')" href="#">Ca₃Co₄O₉ 双掺杂 织构 电输运性能     

Water incorporation into the Ba2(In1 − xMx)2O5‪ (M = Sc 0 ≤ x < 0.5 and M = Y 0 ≤ x < 0.35) system and protonic conduction

Ba₂(In_1 − xM_x)₂O_{5 − y / 2}(OH)_y‪□_{1 − y / 2} (y ≤ 2; M = Sc³⁺ 0 ≤ x < 0.5 and M = Y³⁺ 0 ≤ x < 0.35) compounds were prepared by reacting Ba₂(In_1 − xM_x)₂O₅‪ phases with water vapor. This reaction is reversible. Analyses of the hydration process by TG and XRD studies show that the thermal stability of hydrated phases increases when x increases and that the incorporation of water is not a single-phase reaction inducing either a crystal system or space group modification. Fully hydrated (y = 2) and dehydrated (y = 0) samples have been stabilized at room temperature and characterized for all compositions. In wet air, all phases show a proton contribution to the total conductivity at temperatures between 350 and 600 °C. At a given temperature, proton conductivity increases with the substitution ratio and reaches at 350 °C, 5.4 10^− 3 S cm^− 1 for Ba₂(In_0.65Sc_0.35)₂O_4.2□_0.2(OH)_1.6.     

Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes

In this paper, a simulation and analysis on the short-circuit current density (J_sc) of the P-GaSb window/P-Ga_xIn_1−xAs_1−ySb_y emitter/N-Ga_xIn_1−xAs_1−ySb_y base/N-GaSb substrate structure is performed. The simulations are carried out with a fixed spectral control filter at a radiator temperature (T_rad) of 950 °C, diode temperature (T_dio) of 27 °C and diode bandgap (E_g) of 0.5 eV. The radiation photons are injected from the front P-side. Expressions for minority carrier mobility and absorption coefficient of Ga_xIn_1−xAs_1−ySb_y semiconductors are derived from Caughey–Thomas and Adachi’s model, respectively. The P-Ga_xIn_1−xAs_1−ySb_y emitter with a much longer diffusion length is adopted as the main optical absorption region and the N-Ga_xIn_1−xAs_1−ySb_y base region contribute little to J_sc. The effect of P-GaSb window and P-Ga_xIn_1−xAs_1−ySb_y emitter region parameters on J_sc is mainly analyzed. Dependence of J_sc on thickness and carrier concentration of the window are analyzed; these two parameters need to be properly selected to improve J_sc. Contributions from the main carrier recombination mechanisms in the emitter region are considered; J_sc can be improved by suppressing the carrier recombination rate. Dependence of J_sc on the carrier concentration and layer thickness of the emitter P-region are also analyzed; these two parameters have strong effect on J_sc. Moreover, adding a back surface reflector (BSR) to the diode can improve J_sc. The simulated results are compared with the available experimental data and are found to be in good agreement. These theoretical simulations help us to better understand the electro-optical behavior of Ga_xIn_1−xAs_1−ySb_y TPV diode and can be utilized for performance enhancement through optimization of the device structure.     

Effect of Y2O3 addition on the conductivity and elastic modulus of (CeO2)1 − x(YO1.5)x

The conductivity and elastic modulus of (CeO₂)_1 − x(YO_1.5)_x for x values of 0.10, 0.15, 0.20, 0.30, and 0.40 were investigated by experiments and molecular dynamics simulations. The calculated conductivity exhibited a maximum value at approximately 15 mol% Y₂O₃; this trend agreed with that of the experimental results. In order to clarify the reason for the occurrence of the maximum conductivity, the paths for the transfer of oxygen vacancies were counted. The numerical result revealed that as the content of Y₂O₃ dopant increases, the number of paths for the transfer of oxygen vacancies decreases, whereas the number of oxygen vacancies for conductivity increases. Thus, the trade-off between the increase in the number of vacancy sites and the decrease in the vacancy transfer was considered to be the reason for the maximum conductivity occurring at the Y₂O₃ dopant content of approximately 15 mol%. The calculated elastic modulus also exhibited a minimum value at approximately 20 mol% Y₂O₃, which also agreed with the experimental results. It was shown that the Y–O–Y bonding energy increased with the increasing content of Y₂O₃ dopant. Thus, the trade-off between the increase in the number of vacancy sites and that in the Y–O–Y bonding energy was considered to be the reason for the minimum elastic modulus occurring at the Y₂O₃ dopant content of approximately 20 mol%.     

Transport properties of a and c axis oriented (Y1?xCax)Ba2Cu3Oy thin films

Anisotropy and Hall effect measurements have been performed in calcium-doped, i.e., overdoped YBa₂Cu₃O_y ((Y_1−xCa_x)Ba₂Cu₃O_y) thin films witha andc axis orientations. In highly overdoped films (x=0.4), the anisotropy of the normal resistivity decreases and a drastic change in Hall conductivity in the mixed state is observed. The change in Hall conductivity in the overdoped region is consistent with recent experimental results for La_2−xSr_xCuO₄ films and seems to be common in highT _c superconductors.     

Dynamics and distribution of doped holes in the CuO2 plane of slightly doped antiferromagnetic YBa2(Cu1 ? zLiz)3O6 + x (x < 0.1) studied by Cu(1) NQR

Incidence of doped holes in the CuO₂ plane on the AF state was studied by Cu(1) nuclear quadrupole resonance (NQR) in slightly doped YBa₂(Cu_{1 − z} Li _z )₃O_{6 + x} compounds. Inhomogeneous distribution of doped holes in the plane was detected in the low temperature measurements of transverse (1/T ₂) and longitudinal (1/T ₁) relaxation rates. We establish that at lower T the holes motion slows down and we estimate that the holes localize finally in restricted regions (∼3 lattice constants) in the Coulomb potential of the Li+ ions. Also we compared the hole behavior in slightly doped YBa₂(Cu_{1 − z} Li _z )₃O_{6 + x} samples with that in slightly doped Y_{1 − y} Ca _y Ba₂Cu₃O₆. A stronger trapping potential of the in-plane Li⁺ impurities was concluded as compared to slightly doped Y_{1 − y} Ca _y Ba₂Cu₃O₆ compound with out-of-plane Ca²⁺ impurities.     

Momentum dependence of pseudogap and superconducting gap in variation theory

To consider the origin of a pseudogap and a superconducting (SC) gap found in the high-T_c cuprates, we evaluated the momentum dependence of the singlet gap corresponding to the pseudogap and the SC gap in the t–J model, using an optimization variational Monte Carlo (VMC) method. In the underdoped regime, the singlet gap is significantly modified from the simple d_x²-y²(d)-wave gap (∝ cos k_x − cos k_y) by the contribution of long-range pairings. Its angular dependence at the quasi Fermi surface is qualitatively consistent with those experimentally observed in both hole and electron-doped cuprates. On the other hand, a SC gap is almost unchanged, preserving the original simple d-wave form. Thus, it seems that the incoherent part of the singlet gap mainly influences the forms of observed gaps.     

不同粒径纳米Y2Ba4CuBiOy 相掺杂对TSIG法单畴YBCO超导块材性能的影响

本文采用顶部籽晶熔渗方法(TSIG), 研究了不同粒径纳米Y₂Ba₄CuBiO_y粒子对单畴YBCO超导块材的生长形貌、微观结构及其磁悬浮力的影响.实验所用纳米Y₂Ba₄CuBiO_y粉体的平均粒度分别为283.0 nm, 170.4 nm以及82.5 nm, 每种粉体在YBCO超导块材中的含量均为2 wt%. 研究结果表明: 在掺杂量为2 wt%的情况下, Y₂Ba₄CuBiO_y粉体的粒度并不影响样品的宏观形貌, 均可制备出单畴YBCO块材; 并且成功地将纳米Y₂Ba₄CuBiO_y粒子引入单畴YBCO块材中, 且使其均匀分布, 但样品中的Y₂Ba₄CuBiO_y粒子均小于其初始粉体的粒度, 分别减小到270 nm, 150 nm和50 nm; 随着Y₂Ba₄CuBiO_y粉体初始粒度的减小, 样品的磁悬浮力逐渐增大, 分别为10 N, 17 N, 22 N. 该结果为进一步研究纳米磁通钉扎中心的引入方法及提高YBCO超导块材的性能有重大意义.     

Analysis of thermoelectric power of some insulating high-T c superconductors using extended hubbard model

The thermoelectric power (TEP) for a one-dimensional lattice has been studied using the extended Hubbard model in the limitU ≠ ∞, whereU is the on-site Coulomb interaction. A new expression for TEP has been derived in this study. Our study shows that if theV-dependent term in the extended Hubbard model Hamiltonian is considered as attractive, the new expression for TEP could successfully reproduce the TEP results of high-T _c hole-doped insulating systems of Tl₂Ba₂Ca_1−x Y _x Cu₂O_8+y (Tl-2212) and Bi₂Sr₂Ca_−x Y _x Cu₂O_8+y (Bi-2212).     

Effect of Ca doping on the superconducting properties of GdBaSrCu3O7−δ bulk samples

Gd_1−xCa_xBaSrCu₃O_7−δ samples (0  x  0.1) were prepared via solid-state reaction. Four-point probes method was used for resistance versus temperature measurements. Results show decrease in T_c by increasing x content. This variation is assumed to be irrelevant to the different phases or impurity effects since X-ray patterns show all samples are tetragonal single-phase. Ca doping decreases the oxygen content and lattice parameters of the samples. It is suggested that Ca prevents the dislocation of oxygen, and then disrupts the hole concentration of the system and antiferromagnetic correlation at CuO₂ planes. Subsequently, destroys the superconductivity of the samples.     

Magnetotransport and magnetotunneling in single-layer, two-layer, and three-layer Bi2Sr2Can−1CunOz (n=1,2,3) single crystals

In continuous magnetic fields H up to 28 T, we have studied the out-of-plane transport properties and tunneling characteristics of high-quality nondoped single crystals of the Bi-cuprate family: Bi₂Sr₂CuO_6+δ (Bi2201), Bi₂Sr₂CaCu₂O_8+δ (Bi2212) and Bi₂Sr₂Ca₂Cu₃O_10+δ (Bi2223) grown by an identical method. For all compounds the out-of-plane magnetotransport ρ_c(H) is negative in the temperature region where ρ_c(T) shows in the normal state a semiconducting-like temperature dependence. The negative magnetoresistance of ρ_c corresponds to the suppression of the semiconducting temperature dependence of ρ_c(T) which is found to be isotropic. For the Bi2201 compound, where the normal state can be reached in the available magnetic fields (28 T), a nearly complete suppression of the low-temperature upturn in ρ_c(T) is observed in the highest magnetic fields with a tendency towards a metallic behavior down to the lowest temperatures (0.4 K). Using the break-junction technique, especially for the Bi2212 and Bi2232 compounds, a clear superconducting gap structure can be observed. Both for temperatures above the critical temperature and for magnetic fields above the upper critical field, a pseudogap structure remains present in the tunneling spectra. The applied magnetic fields yield a stronger suppression of the superconducting state compared to that of the normal-state gap structures as manifested in ρ_c(T) transport and tunneling.     

Effect of the percentage of yttrium oxide on the phase composition of annealed samples of YzBa5Cu7Oy and YzBa3Cu5Oy composition

The phase composition of Y _z Ba₅Cu₇O _y (1) and Y _z Ba₃Cu₅O _y (2) samples with a variable percentage of yttrium up to the stoichiometric composition of the Y _n Ba _m Cu _{m + n} O _y series is investigated by X-ray phase and elemental analyses, electron diffraction, and high resolution imaging in a transmission electron microscope at a temperature of 930°C in the crystallization field of a matrix oxide (Ba: Cu) of 5: 6 composition on the phase diagram of the BaO-CuO _x system at P(O₂) = 21 kPa. The substantial effect of yttrium oxide’s presence on the phase composition of both objects is found, providing evidence of a complex ionic equilibrium within the melt. The fine-domain oxide structure of the YBa₂Cu₃O₆ tetragonal form, which is due to the coexistence of oxides of an Y _n Ba _m Cu _m+n O _y homologous series of (Y: Ba: Cu) 235, 123, and 257 composition is revealed. The domain size for these phases is 20–50 ?. The domains are joined coherently along axis c.